arXiv subjects

Shu Nakaharai

Publications and source records attributed to Shu Nakaharai.

17 recordsLinked to original sources

arXiv2026

Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride with broadband microwave pulses

Negatively charged boron vacancy (VB-) defects in hexagonal boron nitride (hBN) are promising for nanoscale-proximity quantum sensing. To evaluate their performance, it is important to characterize the spin coherence times T2* and T2. In this study, we realized sub-GHz Rabi oscillations of VB- using an isotopically enriched hBN thin film directly stamped onto a narrow gold wire. Using these strong microwave pulses, we performed Ramsey interference and Hahn echo measurements. The Ramsey interference signal showed Gaussian-like decay, yielding T2* = 13.8 ns. The Hahn echo measurement gave T2 = 108.7 ns and a stretch factor of α= 1.25. These results experimentally clarify the spin coherence properties of VB- and provide an effective method for evaluating the coherence of spin defects in van der Waals thin films with broad resonance linewidths.

cond-mat.mes-hall↗

arXiv2025

Systematic investigation of dynamic nuclear polarization with boron vacancy in hexagonal boron nitride

Dynamic nuclear polarization (DNP) using the boron vacancy ($\mathrm{V_B^-}$) in hexagonal boron nitride (hBN) has gained increasing attention. Understanding this DNP requires systematically investigating the optically detected magnetic resonance (ODMR) spectra and developing a model that quantitatively describes its behavior. Here, we measure the ODMR spectra of $\mathrm{V_B^-}$ in $\mathrm{h}^{10}\mathrm{B}^{15}\mathrm{N}$ over a wide magnetic field range, including the ground state level anti-crossing (GSLAC), and compare them with the results of the Lindblad-based simulation that considers a single electron spin and three neighboring $^{15}\mathrm{N}$ nuclear spins. Our simulation successfully reproduces the experimental spectra, including the vicinity of GSLAC. It can explain the overall behavior of the magnetic field dependence of the nuclear spin polarization estimated using the Lorentzian fitting of the spectra. Despite such qualitative agreement, we also demonstrate that the fitting methods cannot give accurate polarizations. Finally, we discuss that symmetry-induced mechanisms of $\mathrm{V_B^-}$ limit the maximum polarization. Our study is an essential step toward a quantitative understanding of DNP using defects in hBN and its quantum applications.

cond-mat.mes-hall↗

arXiv2024

Systematic characterization of nanoscale $h$-BN quantum sensor spots created by helium-ion microscopy

The nanosized boron vacancy ($V_\mathrm{B}^-$) defect spot in hexagonal boron nitride ($h$-BN) is promising for a local magnetic field quantum sensor. One of its advantages is that a helium-ion microscope can make a spot at any location in an $h$-BN flake with nanometer accuracy. In this study, we investigate the properties of the created nanosized $V_\mathrm{B}^-$ defect spots by systematically varying three conditions: the helium-ion dose, the thickness of the $h$-BN flakes, and the substrate on which the $h$-BN flakes are attached. The physical background of the results obtained is successfully interpreted using Monte Carlo calculations. From the findings obtained here, a guideline for their optimal creation conditions is obtained to maximize its performance as a quantum sensor concerning sensitivity and localization.

cond-mat.mes-hall↗

arXiv2023

Magnetic field imaging by hBN quantum sensor nanoarray

Placing a sensor close to the target at the nano-level is a central challenge in quantum sensing. We demonstrate high-spatial-resolution magnetic field imaging with a boron vacancy (V$_\text{B}^-$) defects array in hexagonal boron nitride with a few 10 nm thickness. V$_\text{B}^-$ sensor spots with a size of (100 nm)$^2$ are arranged periodically with nanoscale precision using a helium ion microscope and attached tightly to a gold wire. The sensor array allows us to visualize the magnetic field induced by the current in the wire with a spatial resolution beyond the diffraction limit. Each sensor exhibits a practical sensitivity of $73.6~μ\text{T/Hz}^{0.5}$, suitable for quantum materials research. Our technique of arranging V$_\text{B}^-$ quantum sensors periodically and tightly on measurement targets will maximize their potential.

cond-mat.mes-hall↗

arXiv2021

Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields

Employing graphene as a template, we fabricate moiré superlattices by stacking bilayer or folded bilayer-bilayer graphene (BLG or fBBLG) and hexagonal boron nitride (hBN), i.e., hBN/BLG/hBN or hBN/fBBLG/hBN stacks, with a small twist angle between the graphene and one of the two hBN layers. Because of the modulation due to the hBN, higher-generation Dirac points can emerge with a narrow bandwidth and van Hove singularities. In the moiré superlattice devices, we can therefore access the higher-generation Dirac points by in-situ gate tuning. This study is based on our previous paper (Appl. Phys. Express 13, 035003 (2020)). Here we show more extended data by applying high magnetic fields up to ~24 T. We also comment on the temperature dependence of the resistivity and magnetoresistance with reference to the 'plain' BLG data for a comparative study.

cond-mat.mes-hall↗

arXiv2020

ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory

We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic devices. Metal-insulator-semiconductor (MIS)-type devices with two-dimensional (2D) van-der-Waals (vdW) heterostructures have recently been studied as important components to realize various multifunctional device applications in analogue and digital electronics. The tunnel diodes of ReS2/h-BN/graphene exhibit light tuneable rectifying behaviours with low ideality factors and nearly temperature independent electrical characteristics. The devices behave like conventional MIS-type tunnel diodes for logic gate applications. Furthermore, similar vertical heterostructures are shown to operate in field effect transistors with a low threshold voltage and a memory device with a large memory gate for future multifunctional device applications.

cond-mat.mes-hall↗

arXiv2020

Light-Assisted and Gate-Tunable Oxygen Gas Sensor based on Rhenium Disulfide (ReS2) Field-Effect Transistors

Gas sensors based on transition metal dichalcogenides (TMDCs) have attracted much attention from a new perspective involving light-assisted or gate-voltage operation. However, their combined roles as regards the gas sensing performance and mechanism have not yet been understood due to the lack of controlled studies. This study systematically investigates the oxygen sensor performance and mechanism of few-layer-thick rhenium disulfide (ReS2) field-effect transistors (FETs) under light illumination and gate biasing. As a result, a combination of light illumination and positive gate voltage enhanced the device responsivity over 100% at a 1% oxygen concentration, that is, the approach achieved a practical sensitivity of 0.01% ppm-1, which outperform over most of the reports available in the literature. Furthermore, the fabricated devices exhibited long-term stability and stable operation even under humid conditions, indicating the ability of the sensor device to operate in a real-time application. These results contribute to the development of versatile tunable oxygen sensors based on TMDC FETs.

physics.app-ph↗

arXiv2020

Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-layer-ReS2/h-BN/Graphene Heterostructures

Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated. FG-NVM devices based on two-dimensional (2D) van-der-Waals (vdW) heterostructures have recently been studied as important components to realize digital electronics and multifunctional memory applications. Direct bandgap multilayer ReS2 satisfies various requirements as a channel material for electronic devices as well as being a strong light-absorbing layer, which makes it possible to realize light-assisted optoelectronic applications. The non-volatile memory operation with a high ON/OFF current ratio, a large memory window, good endurance (> 1000 cycles) and stable retention (> 104 s) have been observed. We demonstrate successive program and erase states using 10 millisecond gate pulses of +10 V and -10 V, respectively. Laser pulses along with electrostatic gate pulses provide multi-bit level memory access via opto-electrostatic coupling. The devices exhibit the dual functionality of a conventional electronic memory and can store laser-pulse excited signal information for future all-optical logic and quantum information processing.

cond-mat.mtrl-sci↗

arXiv2020

Single-Carrier Transport in Graphene/hBN Superlattices

Graphene/hexagonal boron nitride (hBN) moiré superlattices have attracted interest for use in the study of many-body effects and fractal physics in Dirac fermion systems. Many exotic transport properties have been intensively examined in such superlattices, but previous studies have not focused on single-carrier transport. The investigation of the single-carrier behavior in these superlattices would lead to an understanding of the transition of single-particle/correlated phenomena. Here, we show the single-carrier transport in a high-quality bilayer graphene/hBN superlattice-based quantum dot device. We demonstrate remarkable device controllability in the energy range near the charge neutrality point (CNP) and the hole-side satellite point. Under a perpendicular magnetic field, Coulomb oscillations disappear near the CNP, which could be a signature of the crossover between Coulomb blockade and quantum Hall regimes. Our results pave the way for exploring the relationship of single-electron transport and fractal quantum Hall effects with correlated phenomena in two-dimensional quantum materials.

cond-mat.mes-hall↗

arXiv2019

Observation of superconductivity in bilayer graphene/hexagonal boron nitride superlattices

A class of low-dimensional superconductivity (SC), such as most of "atomic-layer" SCs, has survived only under certain circumstances, implying a role of the substrate. Moreover, in some recent SC discoveries at heterogeneous interfaces, SC was buried in bulk solids and ex situ. Genuine atomic-layer SC is difficult to access. Here we report a novel route to atomic-layer SC in graphene superlattices. Our device comprises stacked non-twisted bilayer graphene (BLG) and hexagonal boron nitride (hBN), i.e., hBN/BLG/hBN Moiré superlattices. Upon in situ electrostatic doping, we observe an SC dome with a critical temperature up to $T_{\rm{BKT}} = 14 \rm{K}$, corresponding to the confinement of vortices. We believe that SC via doping Dirac materials is ubiquitous in condensed matter and that this study paves a way toward the design of a new SC family.

cond-mat.supr-con↗

arXiv2019

Fabry-Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts

We report on the observation of quantum transport and interference in a graphene device that is attached with a pair of split gates to form an electrostatically-defined quantum point contact (QPC). In the low magnetic field regime, the resistance exhibited Fabry-Pérot (FP) resonances due to np'n (pn'p) cavities formed by the top gate. In the quantum Hall (QH) regime with a high magnetic field, the edge states governed the phenomena, presenting a unique condition where the edge channels of electrons and holes along a p-n junction acted as a solid-state analogue of a monochromatic light beam. We observed a crossover from the FP to QH regimes in ballistic graphene QPC under a magnetic field with varying temperatures. In particular, the collapse of the QH effect was elucidated as the magnetic field was decreased. Our high-mobility graphene device enabled observation of such quantum coherence effects up to several tens of kelvins. The presented device could serve as one of the key elements in future electronic quantum optic devices.

cond-mat.mes-hall↗

arXiv2016

Anomalous behavior of 1/f noise in graphene near the charge neutrality point

We investigate the noise in single layer graphene devices from equilibrium to far from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge relation is not the case around the charge neutrality point, we found that it is recovered at very low VSD region. We propose that the depinning of the electron-hole puddles is induced at finite VSD, which may explain this anomalous noise behavior.

cond-mat.mes-hall↗

arXiv2015

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers

Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. It is found that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities.

cond-mat.mes-hall↗

arXiv2013

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility (μ) in them as compared with corresponding bulk structures, which constitutes the main hurdle for realizing high-performance devices. To address this issue, we perform combined experimental and theoretical study on atomically thin MoS2 field effect transistors with varying the number of MoS2 layers (NLs). Experimentally, an intimate relation is observed with a 10-fold degradation in μ for extremely thinned monolayer channels. To accurately describe the carrier scattering process and shed light on the origin of the thinning-induced mobility degradation, a generalized Coulomb scattering model is developed with strictly considering device configurative conditions, i.e., asymmetric dielectric environments and lopsided carrier distribution. We reveal that the carrier scattering from interfacial Coulomb impurities (e.g., chemical residues, gaseous adsorbates and surface dangling bonds) is greatly intensified in extremely thinned channels, resulting from shortened interaction distance between impurities and carriers. Such a pronounced factor may surpass lattice phonons and serve as dominant scatterers. This understanding offers new insight into the thickness induced scattering intensity, highlights the critical role of surface quality in electrical transport and would lead to rational performance improvement strategies for future atomic electronics.

cond-mat.mes-hall↗

arXiv2013

Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

We demonstrate the possibility in quantifying the Raman intensities for both specimen and substrate layers in a common stacked experimental configuration and, consequently, propose a general and rapid thickness identification technique for atomic-scale layers on dielectric substrates. Unprecedentedly wide-range Raman data for atomically flat MoS2 flakes are collected to compare with theoretical models. We reveal that all intensity features can be accurately captured when including optical interference effect. Surprisingly, we find that even freely suspended chalcogenide few-layer flakes have a stronger Raman response than that from the bulk phase. Importantly, despite the oscillating intensity of specimen spectrum versus thickness, the substrate weighted spectral intensity becomes monotonic. Combined with its sensitivity to specimen thickness, we suggest this quantity can be used to rapidly determine the accurate thickness for atomic layers.

cond-mat.mes-hall↗

arXiv2012

Unipolar transport in bilayer graphene controlled by multiple p-n interfaces

Unipolar transport is demonstrated in a bilayer graphene with a series of p-n junctions and is controlled by electrostatic biasing by a comb-shaped top gate. The OFF state is induced by multiple barriers in the p-n junctions, where the band gap is generated by applying a perpendicular electric field to the bilayer graphene, and the ON state is induced by the p-p or n-n configurations of the junctions. As the number of the junction increases, current suppression in the OFF state is pronounced. The multiple p-n junctions also realize the saturation of the drain current under relatively high source-drain voltages.

cond-mat.mes-hall↗

arXiv2011

Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon

The concept of a novel graphene P-I-N junction switching device with a nanoribbon is proposed, and its basic operation is demonstrated in an experiment. The concept aims to optimize the operation scheme for graphene transistors toward a superior on-off property. The device has two bulk graphene regions where the carrier type is electrostatically controlled by a top gate, and these two regions are separated by a nanoribbon which works as an insulator. As a result, the device forms a (P or N)-I-(P or N) junction structure. The off state is obtained by lifting the band of the bulk graphene of the source (drain) side and lowering that of the drain (source) side, so that the device forms a P-I-N (N-I-P) junction. In this configuration, the leakage current can be reduced more effectively than the conventional single gate transistors with the same band gap size due to a high barrier height and a long tunneling length in the nanoribbon. The on state is obtained by flipping the polarity of the bias of either top gate to form a P-I-P or N-I-N junction. An experiment showed that the drain current was suppressed in the cases of P-I-N and N-I-P compared to the cases of P-I-P and N-I-N, and all of the behaviors were consistent with what was expected from the device operation model.

cond-mat.mes-hall↗