Searcharxiv⌕ Search

arXiv subjects

Shuang Jia

Publications and source records attributed to Shuang Jia.

At least 109 records · Page 6Linked to original sources
arXiv2015

Topological Phase Transition in Single Crystals of $(Cd_{1-x} Zn_x)_3 As_2$

Single crystals of $(Cd_{1-x} Zn_x)_3 As_2$ were synthesized from high-temperature solutions and characterized in terms of their structural and electrical properties. Based on the measurements of resistivity and Hall signals, we revealed a chemical-doping-controlled transition from a three dimensional Dirac semimetal to a semiconductor with a critical point $x_c/sim 0.38$. We observed structural transitions from a body-center tetragonal phase to a primary tetragonal phase then back to a body-center tetragonal phase in the solid solutions as well, which are irrelevant to the topological phase transition. This continuously tunable system controlled by chemical doping provides a platform for investigating the topological quantum phase transition of 3D Dirac electrons.

cond-mat.mtrl-sci↗
arXiv2015

Large Magnetoresistance over an Extended Temperature Regime in Monophosphides of Tantalum and Niobium

We report extremely large magnetoresistance (MR) in an extended temperature regime from 1.5 K to 300 K in non-magnetic binary compounds TaP and NbP. TaP exhibits linear MR around $1.8\times 10^4$ at 2 K in a magnetic field of 9 Tesla, which further follows its linearity up to $1.4\times 10^5$ in a magnetic field of 56 Tesla at 1.5 K. At room temperature the MR for TaP and NbP follows a power law of the exponent about $1.5$ with the values larger than $300\%$ in a magnetic field of 9 Tesla. Such large MR in a wide temperature regime is not likely only due to a resonance of the electron-hole balance, but indicates a complicated mechanism underneath.

cond-mat.mtrl-sci↗
arXiv2015

Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation

Black phosphorus has recently emerged as a promising material for high performance electronic and optoelectronic device for its high mobility, tunable mid-infrared bandgap and anisotropic electronic properties. Dynamical evolution of photo excited carriers and its induced change of transient electronic properties are critical for materials' high field performance, but remains to be explored for black phosphorus. In this work, we perform angle resolved transient reflection spectroscopy to study the dynamical evolution of anisotropic properties of black phosphorus under photo excitation. We find that the anisotropy of reflectivity is enhanced in the pump induced quasi-equilibrium state, suggesting an extraordinary enhancement of the anisotropy in dynamical conductivity in hot carrier dominated regime. These results raise enormous possibilities of creating high field, angle sensitive electronic, optoelectronic and remote sensing devices exploiting the dynamical electronic anisotropic with black phosphorus.

cond-mat.mtrl-sci↗
arXiv2015

Unconventional transformation of spin Dirac phase across a topological quantum phase transition

The topology of a topological material can be encoded in its surface states. These surface states can only be removed by a bulk topological quantum phase transition into a trivial phase. Here we use photoemission spectroscopy to image the formation of protected surface states in a topological insulator as we chemically tune the system through a topological transition. Surprisingly, we discover an exotic spin-momentum locked, gapped surface state in the trivial phase that shares many important properties with the actual topological surface state in anticipation of the change of topology. Using a spin-resolved measurement, we show that apart from a surface band-gap these states develop spin textures similar to the topological surface states well-before the transition. Our results offer a general paradigm for understanding how surface states in topological phases arise and are suggestive for future realizing Weyl arcs, condensed matter supersymmetry and other fascinating phenomena in the vicinity of topological quantum criticality.

cond-mat.mes-hall↗
arXiv2015

Ultraquantum magnetoresistance in single-crystalline $β$-Ag$_2$Se

In the history of condensed matter physics, reinvestigation of a well-studied material with enhanced quality sometimes led to important scientific discoveries. A well-known example is the discovery of fractional quantum Hall effect in high quality GaAs/AlGaAs heterojunctions. Here we report the first single crystal growth and magnetoresistance (MR) measurements of the silver chalcogenide $β$-Ag$_2$Se (Naumannite), a compound has been known for the unusual, linear-field-dependent MR in its polycrystalline form for over a decade. With the quantum limit (QL) as low as 3 Tesla, a moderate field produced by a superconductor magnet available in many laboratories can easily drive the electrons in Ag$_2$Se to an unprecedented state. We observed significant negative longitudinal MR beyond the QL, which was understood as a `charge-pumping' effect between the novel fermions with opposite chiralities. Characterization of the single-crystalline Ag$_2$Se and the fabrication of electric devices working above the QL, will represent a new direction for the study of these exotic electrons.

cond-mat.str-el↗
arXiv2015

Tantalum Monoarsenide: an Exotic Compensated Semimetal

Compared with the semiconductors such as silicon and gallium arsenide which have been used widely for decades, semimetals have not received much attention in the field of condensed matter physics until very recently. The realization of electronic topological properties has motivated interest of investigations on Dirac semimetals and Weyl semimetals, which are predicted to show unprecedented features beyond the classical electronic theories of metals. In this letter for the first time we report the electric transport properties of a robust Weyl semimetal candidate proposed by recent theoretical calculations, TaAs. Our study shows that this bulk material manifests ultrahigh carrier mobility ($\mathrm{5\times10^5 cm^2/V\cdot{s}}$) accompanied by an extremely large, unsaturated linear magnetoresistance ($\mathrm{MR}$), which reaches 5400 at 10 Kelvins in a magnetic field of 9 Teslas and 2.47$\times$10$^4$ at 1.5 Kelvins in a magnetic field of 56 Teslas. We also observed strong Shubnikov-de Haas (SdH) oscillations associated with an extremely low quantum limit ($\sim$8 Teslas). Further studies on TaAs, especially in the ultraquantum limit regime, will help to extend the realization of the topological properties of these exotic electrons.

cond-mat.mtrl-sci↗
arXiv2015

Observation of superconductivity in 3D Dirac semimetal Cd3As2 crystal

Lately, the three-dimensional (3D) Dirac semimetal, which possesses 3D linear dispersion in electronic structure as a bulk analogue of graphene, has generated widespread interests in both material science and condensed matter physics. Very recently, crystalline Cd3As2 has been proposed and proved to be one of 3D Dirac semimetals which can survive in atmosphere. Here, by controlled point contact (PC) measurement, we observe the exotic superconductivity around point contact region on the surface of Cd3As2 crystal. The observation of zero bias conductance peak (ZBCP) and double conductance peaks (DCPs) symmetric to zero bias further reveal p-wave like unconventional superconductivity in Cd3As2 quantum matter. Considering the topological property of the 3D Dirac semimetal, our findings may indicate that the Cd3As2 crystal under certain conditions is a candidate of the topological superconductor, which is predicted to support Majorana zero modes or gapless Majorana edge/surface modes in the boundary depending on the dimensionality of the material.

cond-mat.supr-con↗
arXiv2014

Evidence for a New Excitation at the Interface Between a High-Tc Superconductor and a Topological Insulator

High-temperature superconductors exhibit a wide variety of novel excitations. If contacted with a topological insulator, the lifting of spin rotation symmetry in the surface states can lead to the emergence of unconventional superconductivity and novel particles. In pursuit of this possibility, we fabricated high critical-temperature (Tc ~ 85 K) superconductor/topological insulator (Bi2Sr2CaCu2O8+delta/Bi2Te2Se) junctions. Below 75 K, a zero-bias conductance peak (ZBCP) emerges in the differential conductance spectra of this junction. The magnitude of the ZBCP is suppressed at the same rate for magnetic fields applied parallel or perpendicular to the junction. Furthermore, it can still be observed and does not split up to at least 8.5 T. The temperature and magnetic field dependence of the excitation we observe appears to fall outside the known paradigms for a ZBCP.

cond-mat.supr-con↗
arXiv2014

Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility 3D Dirac Semimetal Cd3As2

The three-dimensional (3D) topological Dirac semimetal is a new topological phase of matter, viewed as the 3D analogy of graphene with a linear dispersion in the 3D momentum space. Here, we report the angular dependent magnetotransport in Cd3As2 single crystal and clearly show how the Fermi surface evolves when tilting the magnetic field. Remarkably, when the magnetic field lies in [112] and [44-1] axis, only single oscillation period features present, however, the system shows double period oscillations when the field is applied along [1-10] direction. Moreover, tilting the magnetic field at certain direction also gives double period oscillations. We attribute the anomalous oscillation behavior to the sophisticated geometry of Fermi surface and illustrate a complete 3D Fermi surfaces with two nested anisotropic ellipsoids around the Dirac point. Additionally, a sub-millimeter mean free path at 6 K is observed in Cd3As2 crystal, indicating a large ballistic transport region in this material. Tracking the magnetoresistance oscillations to 60 T, we reach the quantum limit (n = 1 Landau Level) at about 43 T. These results improve the knowledge of the Dirac semimetal material Cd3As2, and also pave the way for proposing new electronic applications based on 3D Dirac materials.

cond-mat.mtrl-sci↗
arXiv2013

Tuning the quantum oscillations of surface Dirac electrons in the topological insulator Bi$_2$Te$_2$Se by liquid gating

In Bi$_2$Te$_2$Se, the period of quantum oscillations arising from surface Dirac fermions can be increased 6-fold using ionic liquid gating. At large gate voltages, the Fermi energy reaches the $N$ = 1 Landau level in a 14-Tesla field. This enables the $\frac12$-shift predicted for the Dirac spectrum to be measured accurately. A surprising result is that liquid gating strongly enhances the surface mobility. By analyzing the Hall conductivity, we show that the enhancement occurs on only one surface. We present evidence that the gating process is fully reversible (hence consistent with band-bending by the $E$-field from the anion layer accumulated). In addition to the surface carriers, the experiment yields the mobility and density of the bulk carriers in the impurity band. By analyzing the charge accumulation vs. gate voltage, we also obtain estimates of the depletion width and the areal depletion capacitance $C_d/A$. The value of $C_d/A$ implies an enhanced electronic polarizability in the depletion region.

cond-mat.mes-hall↗
arXiv2013

Hybrid high-temperature superconductor-semiconductor tunnel diode

We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding technique, resulting in high-Tc-semiconductor planar junctions acting as superconducting tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+δ combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity - in good agreement with theoretical predictions for a d-wave superconductor-normal material junction, and similar to spectra obtained in scanning tunneling microscopy. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+δ combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials and quantum technology applications.

cond-mat.supr-con↗
arXiv2012

Proximity-induced high-temperature superconductivity in topological insulators Bi2Se3 and Bi2Te3

Interest in the superconducting proximity effect has been reinvigorated recently by novel optoelectronic applications as well as by the possible emergence of the elusive Majorana fermion at the interface between topological insulators and superconductors. Here we produce high-temperature superconductivity in Bi2Se3 and Bi2Te3 via proximity to Bi2Sr2CaCu2O8+δ, in order to access increasing temperature and energy scales for this phenomenon. This was achieved by a new mechanical bonding technique we developed, enabling the fabrication of high-quality junctions between materials, unobtainable by conventional approaches. We observe proximity-induced superconductivity in Bi2Se3 and Bi2Te3 persisting up to at least 80K, a temperature an order of magnitude higher than any previous observations. Moreover, the induced superconducting gap in our devices reaches values of 10mV, significantly enhancing the relevant energy scales. Our results open new directions for fundamental studies in condensed matter physics and enable a wide range of applications in spintronics and quantum computing.

cond-mat.supr-con↗
arXiv2012

High-Field Shubnikov-de Haas Oscillations in the Topological Insulator Bi$_2$Te$_2$Se

We report measurements of the surface Shubnikov de Haas oscillations (SdH) on crystals of the topological insulator Bi$_2$Te$_2$Se. In crystals with large bulk resistivity ($\sim$4 $Ω$cm at 4 K), we observe $\sim$15 surface SdH oscillations (to the $n$ = 1 Landau Level) in magnetic fields $B$ up to 45 Tesla. Extrapolating to the limit $1/B\to 0$, we confirm the $\frac12$-shift expected from a Dirac spectrum. The results are consistent with a very small surface Lande $g$-factor.

cond-mat.mes-hall↗
arXiv2011

Low carrier concentration crystals of the topological insulator Bi$_2$Te$_2$Se

We report the characterization of Bi$_2$Te$_2$Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal growth techniques. X-ray diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity ($> 1 \mathrm{Ωcm}$) and low carrier concentration ($\sim 5\times 10^{16}$/cm$^3$) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.

cond-mat.str-el↗
arXiv2011

Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator

The recently discovered three dimensional or bulk topological insulators are expected to exhibit exotic quantum phenomena. It is believed that a trivial insulator can be twisted into a topological state by modulating the spin-orbit interaction or the crystal lattice via odd number of band inversions, driving the system through a topological quantum phase transition. By directly measuring the topological invariants (for the method to directly measure Fu-Kane {$ν_0$}, see Hsieh \textit{et.al.,} Science 323, 919 (2009) at http://www.sciencemag.org/content/323/5916/919.abstract) we report the observation of a phase transition in a tunable spin-orbit system BiTl(S{1-d}Se{d})2 (which is an analog of the most studied topological insulator Bi2Se3, see Xia \textit{et.al.,} Nature Phys. 5, 398 (2009) at http://www.nature.com/nphys/journal/v5/n6/full/nphys1294.html and Spin-Momentum locking at http://www.nature.com/nature/journal/v460/n7259/full/nature08234.html) where the topological insulator state formation is visualized for the first time. In the topological state, vortex-like polarization states are observed to exhibit 3D vectorial textures, which collectively feature a chirality transition of its topological spin-textures as the spin-momentum locked (Z2 topologically ordered) electrons on the surface go through the zero carrier density point. Such phase transition and texture chirality inversion can be the physical basis for observing \textit{fractional charge} (e/2) and other related fractional topological phenomena.

cond-mat.mes-hall↗
arXiv2011

Effect of hydrostatic pressure on transport in the topological insulator Bi$_2$Te$_2$Se

The Hall coefficient $R_H$ and resistivity $ρ$ of the topological insulator Bi$_2$Te$_2$Se display a number of puzzling features vs. temperature $T$. We propose a model that describes well the non-monotonic variation of $R_H(T)$. A key feature of the model is a chemical potential that is weakly $T$-dependent. From the fit to the model, we infer a "transport" gap $Δ_T$ of 50 mV. We find that hydrostatic pressure $P$ (0-27 kbar) has a pronounced effect on both $R_H$ and $ρ$. We show that these changes arise from decreases in both $Δ_T$ and the hole effective mass under pressure.

cond-mat.mes-hall↗