arXiv subjects

Shuang-Shuang Li

Publications and source records attributed to Shuang-Shuang Li.

5 recordsLinked to original sources

arXiv2026

A problem of Yang and Chen on weighted representation functions

Let $\mathbb N$ denote the set of nonnegative integers. For an integer $k>1$ and a set $A\subseteq\mathbb N$, let $R_{1,k}(A,n)$ denote the number of solutions of $n=a_1+ka_2$ with $a_1,a_2\in A$. For integers $k>1$ and $t\ge1$, Yang and Chen defined $f_k(t)$ to be the number of sets $A\subseteq\mathbb N$ for which \[ R_{1,k}(A,n)=R_{1,k}(\mathbb N\setminus A,n) \] for all integers $n\ge t$, and asked whether $f_k(t)$ and $f_l(t)$ are eventually equal for any integers $k,l>1$. We prove that \[ f_k(t)\asymp_k \frac{2^t}{t^{k/2}}, \] which gives a negative answer to their problem.

math.NT↗

arXiv2023

Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide

Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and volatile tunability limit its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of SOI via constructing ferroelectric Rashba architectures, i.e., 2D Bi2O2Se/PMN-PT ferroelectric field effect transistors. The experimentally observed weak antilocalization (WAL) cusp in Bi2O2Se films implies the Rashba-type SOI that arises from asymmetric confinement potential. Significantly, taking advantage of the switchable ferroelectric polarization, the WAL-to-weak localization (WL) transition trend reveals the competition between spin relaxation and dephasing process, and the variation of carrier density leads to a reversible and nonvolatile modulation of spin relaxation time and spin splitting energy of Bi2O2Se films by this ferroelectric gating. Our work provides a scheme to achieve nonvolatile control of Rashba SOI with the utilization of ferroelectric remanent polarization.

cond-mat.mtrl-sci↗

arXiv2023

Magnetotransport and Berry phase Tuning in Gd-doped Bi2Se3 Topological Insulator Single Crystals

The Berry phase is an important concept in solids, correlated to the band topology, axion electrodynamics and potential applications of topological materials. Here, we investigate the magnetotransport and Berry phase of rare earth element Gd doped Bi2Se3 (Gd_Bi2Se3) topological insulator at low temperatures and high magnetic fields. Gd_Bi2Se3 single crystals show Shubnikov-de Haas (SdH) oscillations with nontrivial Berry phase while Bi2Se3 single crystals show zero Berry phase in SdH oscillations. The temperature dependent magnetization curves can be well fitted with the Curie-Weiss law in 3-300 K region, indicating no magnetic ordering in Gd_Bi2Se3 crystals. Moreover, Gd doping has limited influence on the quantum oscillation parameters (e.g., frequency of oscillations, the area of the Fermi surface, effective electron mass, Fermi wave vectors etc.), but has an impact on the Hall mobility, carrier density, and band topology. Our results demonstrate that Gd doping can tune the Berry phase of topological insulators effectively, which may pave a way for the future realization of many predicted exotic transport phenomena of topological origin.

cond-mat.mtrl-sci↗

arXiv2023

Coexistence of Logarithmic and SdH Quantum Oscillations in Ferromagnetic Cr-doped Tellurium Single Crystals

We report the synthesis of transition-metal-doped ferromagnetic elemental single-crystal semiconductors with quantum oscillations using the physical vapor transport method. The 7.7 atom% Cr-doped Te crystals (Cr_Te) show ferromagnetism, butterfly-like negative magnetoresistance in the low temperature (< 3.8 K) and low field (< 0.15 T) region, and high Hall mobility, e.g., 1320 cm2 V-1 s-1 at 30 K and 350 cm2 V-1 s-1 at 300 K, implying that Cr_Te crystals are ferromagnetic elemental semiconductors. When B // c // I, the maximum negative MR is -27% at T = 20 K and B = 8 T. In the low temperature semiconducting region, Cr_Te crystals show strong discrete scale invariance dominated logarithmic quantum oscillations when the direction of the magnetic field B is parallel to the [100] crystallographic direction and show Landau quantization dominated Shubnikov-de Haas (SdH) oscillations for B // [210] direction, which suggests the broken rotation symmetry of the Fermi pockets in the Cr_Te crystals. The findings of coexistence of multiple quantum oscillations and ferromagnetism in such an elemental quantum material may inspire more study of narrow bandgap semiconductors with ferromagnetism and quantum phenomena.

cond-mat.mtrl-sci↗

arXiv2022

Hot 2DHG states in tellurium

Element semiconductor Te is very popular in both fundamental electronic structure study, and device fabrication research area due to its unique band structure. Specifically, in low temperatures, Te possesses strong quantum oscillations with magnetic field applied in basal plane, either following Shubnikov-de Haas (SdH) oscillation rule or following log-periodic oscillation rule. With magnetic field applied along the [001] direction, the SdH oscillations are attributed to the two-dimensional hole gas (2DHG) surface states. Here we reported an interesting SdH oscillation in Te-based single crystals, with the magnetic field applied along the [001] direction of the crystals, showing the maximum oscillation intensity at ~ 75 K, and still traceable at 200 K, which indicates a rather hot 2DHG state. The nontrivial Berry phase can be also obtained from the oscillations, implying the contribution from topological states. More importantly, the high temperature SdH oscillation phenomena are observed in different Te single crystals samples, and Te single crystals with nonmagnetic/magnetic dopants, showing robustness to bulk defects. Therefore, the oscillation may be contributed by the bulk symmetry protected hot 2DHG states, which will offer a new platform for high-temperature quantum transport studies.

cond-mat.mtrl-sci↗