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Shubham Sahay

Publications and source records attributed to Shubham Sahay.

8 recordsLinked to original sources

A Retinomorphic Optical Spiking Neuron for Camouflaged Object Detection

Advanced vision systems require retinomorphic, energy-efficient spike-based preprocessing of dynamic visual scenes. Here, we demonstrate multiple retinal preprocessing functionalities by leveraging a Hodgkin-Huxley-based optical spiking neuron (OSHN) that incorporates a two-dimensional anti-ambipolar phototransistor operated in the subthreshold regime to minimize power consumption. OSHN exhibits wavelength- and intensity-sensitive spike encoding with energy consumption per spike of 0.9 pJ under dark, 2 pJ at 480 nm (mid wavelength, M), and 24.5 pJ at 800 nm (long wavelength, L). The low (biological)-to-high spiking rate (0 - 2 kHz) with substantially faster response times (4.2 $\mu$s - 1.25 ms) than the human retina (30 ms - 60 ms), reveal OSHN's fast decision-making capability. OSHN facilitates concurrent spectral-spatial processing by emulating retinal antagonistic center-surround receptive fields (CSRFs) at a single wavelength (480 nm or 800 nm) with varying intensities, visual adaptation (at 480 nm) to prevent system saturation, and L-M cone opponency in midget ganglion cells. Finally, a CSRF-augmented spiking neural network (SNN) has been developed for camouflaged object detection, achieving 4.4%, 10.4%, and 28.4% improvements in accuracy over conventional SNN on FMNIST, COD10K, and synthetic camouflaged datasets, outperforming existing photoactive spiking architectures while enabling event-driven intelligent edge vision systems.

physics.app-ph

Ferroelectric FET-based Logic-in-Memory Encoder for Hyperdimensional Computing

Hyperdimensional (HD) computing involves encoding of baseline information into large hypervectors and repeated Boolean operations to generate the output class hypervectors which are stored in an associative memory. The classification task is then performed through similarity search operation. While prior studies have focused mostly on accelerating HD search operation using TCAMs based on emerging non-volatile memories, considering the dominant contribution of the encoder module to the energy and latency landscape specifically for complex datasets such as language recognition, DNA sequencing, etc., in this work, we propose energy- and area-efficient single FDSOI ferroelectric (Fe)FET-based logic-in-memory implementations of XOR and 3-input majority gates for N-gram HD encoders. We utilize the proposed FeFET-based encoder in a HD spam filtering accelerator and show that it outperforms the prior emerging non-volatile memory-based implementations in terms of area and energy-efficiency while exhibiting a high classification accuracy of 91.38% on the SMS Spam Collection dataset.

cs.ET

Efficient Reinforcement Learning On Passive RRAM Crossbar Array

The unprecedented growth in the field of machine learning has led to the development of deep neuromorphic networks trained on labelled dataset with capability to mimic or even exceed human capabilities. However, for applications involving continuous decision making in unknown environments, such as rovers for space exploration, robots, unmanned aerial vehicles, etc., explicit supervision and generation of labelled data set is extremely difficult and expensive. Reinforcement learning (RL) allows the agents to take decisions without any (human/external) supervision or training on labelled dataset. However, the conventional implementations of RL on advanced digital CPUs/GPUs incur a significantly large power dissipation owing to their inherent von-Neumann architecture. Although crossbar arrays of emerging non-volatile memories such as resistive (R)RAMs with their innate capability to perform energy-efficient in situ multiply-accumulate operation appear promising for Q-learning-based RL implementations, their limited endurance restricts their application in practical RL systems with overwhelming weight updates. To address this issue and realize the true potential of RRAM-based RL implementations, in this work, for the first time, we perform an algorithm-hardware co-design and propose a novel implementation of Monte Carlo (MC) RL algorithm on passive RRAM crossbar array. We analyse the performance of the proposed MC RL implementation on the classical cart-pole problem and demonstrate that it not only outperforms the prior digital and active 1-Transistor-1-RRAM (1T1R)-based implementations by more than five orders of magnitude in terms of area but is also robust against the spatial and temporal variations and endurance failure of RRAMs.

cs.ET

Energy-Efficient Implementation of Generative Adversarial Networks on Passive RRAM Crossbar Arrays

Generative algorithms such as GANs are at the cusp of next revolution in the field of unsupervised learning and large-scale artificial data generation. However, the adversarial (competitive) co-training of the discriminative and generative networks in GAN makes them computationally intensive and hinders their deployment on the resource-constrained IoT edge devices. Moreover, the frequent data transfer between the discriminative and generative networks during training significantly degrades the efficacy of the von-Neumann GAN accelerators such as those based on GPU and FPGA. Therefore, there is an urgent need for development of ultra-compact and energy-efficient hardware accelerators for GANs. To this end, in this work, we propose to exploit the passive RRAM crossbar arrays for performing key operations of a fully-connected GAN: (a) true random noise generation for the generator network, (b) vector-by-matrix-multiplication with unprecedented energy-efficiency during the forward pass and backward propagation and (C) in-situ adversarial training using a hardware friendly Manhattan's rule. Our extensive analysis utilizing an experimentally calibrated phenomological model for passive RRAM crossbar array reveals an unforeseen trade-off between the accuracy and the energy dissipated while training the GAN network with different noise inputs to the generator. Furthermore, our results indicate that the spatial and temporal variations and true random noise, which are otherwise undesirable for memory application, boost the energy-efficiency of the GAN implementation on passive RRAM crossbar arrays without degrading its accuracy.

cs.ET

Long Short-Term Memory Implementation Exploiting Passive RRAM Crossbar Array

The ever-increasing demand to extract temporal correlations across sequential data and perform context-based learning in this era of big data has led to the development of long short-term memory (LSTM) networks. Furthermore, there is an urgent need to perform these time-series data-dependent applications including speech/video processing and recognition, language modelling and translation, etc. on compact internet-of-things (IoT) edge devices with limited energy. To this end, in this work, for the first time, we propose an extremely area- and energy-efficient LSTM network implementation exploiting the passive resistive random access memory (RRAM) crossbar array. We developed a hardware-aware LSTM network simulation framework and performed an extensive analysis of the proposed LSTM implementation considering the non-ideal hardware artifacts such as spatial (device-to-device) and temporal variations, non-linearity, noise, etc. utilizing an experimentally calibrated comprehensive phenomenological model for passive RRAM crossbar array. Our results indicate that the proposed passive RRAM crossbar-based LSTM network implementation not only outperforms the prior digital and active 1T-1R crossbar-based LSTM implementations by more than three orders of magnitude in terms of area and two orders of magnitude in terms of training energy for identical network accuracy, but also exhibits robustness against spatial and temporal variations and noise, and a faster convergence rate. Our work may provide the incentive for experimental realization of LSTM networks on passive RRAM crossbar arrays.

cs.ET

Energy-Efficient Moderate Precision Time-Domain Mixed-signal Vector-by-Matrix Multiplier Exploiting 1T-1R Arrays

The emerging mobile devices in this era of internet-of-things (IoT) require a dedicated processor to enable computationally intensive applications such as neuromorphic computing and signal processing. Vector-by-matrix multiplication (VMM) is the most prominent operation in these applications. Therefore, there is a critical need for compact and ultralow-power VMM blocks to perform resource-intensive low-to-moderate precision computations. To this end, in this work, for the first time, we propose a time-domain mixed-signal VMM exploiting a modified configuration of 1MOSFET-1RRAM (1T-1R) array. The proposed VMM overcomes the energy inefficiency of the current-mode VMM approaches based on RRAMs. A rigorous analysis of the different non-ideal factors affecting the computational precision indicates that the non-negligible minimum cell currents, channel length modulation (CLM) and drain-induced barrier lowering (DIBL) are the dominant mechanisms degrading the precision of the proposed VMM. Our results also indicate that there exists a trade-off between the computational precision, dynamic range, and the area- and energy-efficiency of the proposed VMM approach. Therefore, we provide the necessary design guidelines for optimizing the performance. Our preliminary results show that an effective computational precision of 6-bits is achievable owing to an inherent compensation effect in the modified 1T-1R blocks. Furthermore, a 4-bit 200x200 VMM utilizing the proposed approach exhibits a significantly high energy efficiency of ~1.5 POps/J and a throughput of 2.5 TOps/s including the contribution from the input/output (I/O) circuitry.

eess.SP

3D-aCortex: An Ultra-Compact Energy-Efficient Neurocomputing Platform Based on Commercial 3D-NAND Flash Memories

The first contribution of this paper is the development of extremely dense, energy-efficient mixed-signal vector-by-matrix-multiplication (VMM) circuits based on the existing 3D-NAND flash memory blocks, without any need for their modification. Such compatibility is achieved using time-domain-encoded VMM design. Our detailed simulations have shown that, for example, the 5-bit VMM of 200-element vectors, using the commercially available 64-layer gate-all-around macaroni-type 3D-NAND memory blocks designed in the 55-nm technology node, may provide an unprecedented area efficiency of 0.14 um2/byte and energy efficiency of ~10 fJ/Op, including the input/output and other peripheral circuitry overheads. Our second major contribution is the development of 3D-aCortex, a multi-purpose neuromorphic inference processor that utilizes the proposed 3D-VMM blocks as its core processing units. We have performed rigorous performance simulations of such a processor on both circuit and system levels, taking into account non-idealities such as drain-induced barrier lowering, capacitive coupling, charge injection, parasitics, process variations, and noise. Our modeling of the 3D-aCortex performing several state-of-the-art neuromorphic-network benchmarks has shown that it may provide the record-breaking storage efficiency of 4.34 MB/mm2, the peak energy efficiency of 70.43 TOps/J, and the computational throughput up to 10.66 TOps/s. The storage efficiency can be further improved seven-fold by aggressively sharing VMM peripheral circuits at the cost of slight decrease in energy efficiency and throughput.

cs.ET

A Behavioral Compact Model of 3D NAND Flash Memory

We present a behavioral compact model of 3D NAND flash memory for integrated circuits and system-level applications. This model is easy to implement, computationally efficient, fast, accurate and effectively accounts for the different parasitic capacitance coupling effects applicable to the 3D geometry of the vertical channel Macaroni body charge-trap flash memory. The model parameter extraction methodology is simple and can be extended to reproduce the electrical behavior of different 3D NAND flash memory architectures (with different page size, dimension, or number of stacked layers). We believe that the developed compact model would equip the circuit designers and system architects with an effective tool for design-exploration of 3D NAND flash memory devices for diverse unconventional analog applications.

cs.ET