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Shuhua Yao

Publications and source records attributed to Shuhua Yao.

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Chiral Ordering Spin Associated Glass like State in SrRuO3SrIrO3 Superlattice

Heterostructure interface provides a powerful platform to observe rich emergent phenomena, such as interfacial superconductivity, nontrivial topological surface state. Here SrRuO3/SrIrO3 superlattices were epitaxially synthesized. The magnetic and electrical properties of these superlattices were characterized. Broad cusps in the zero field cooling magnetization curves and near stable residual magnetization below the broad cusps, as well as two steps magnetization hysteresis loops are observed. The magnetization relaxes following a modified Stretched function model indicating coexistence of spin glass and ferromagnetic ordering in the superlattices. Topological Hall effect was demonstrated at low temperature and weakened with the increase of SrIrO3 layer thickness. These results suggest that chiral ordering spin texture were generated at the interfaces due to the interfacial Dzyaloshinskii-Moriya (DM) interaction, which generates the spin glass behaviors. The present work demonstrates that SrIrO3 can effectively induce interface DM interactions in heterostructures, it would pave light on the new research directions of strong spin orbit interaction oxides, from the viewpoints of both basic science and prospective spintronics devices applications.

cond-mat.mtrl-sci

Broadband Photovoltaic Detectors based on an Atomically Thin Heterostructure

Van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due to their unique electronic properties and strong light-matter interaction. However, many important optoelectronic applications, such as broadband photodetection, are severely hindered by their limited spectral range and reduced light absorption. Here, we present a p-g-n heterostructure formed by sandwiching graphene with a gapless bandstructure and wide absorption spectrum in an atomically thin p-n junction to overcome these major limitations. We have successfully demonstrated a MoS2-graphene-WSe2 heterostructure for broadband photodetection in the visible to short-wavelength infrared range at room temperature that exhibits competitive device performance, including a specific detectivity of up to 1011 Jones in the near-infrared region. Our results pave the way toward the implementation of atomically thin heterostructures for broadband and sensitive optoelectronic applications.

cond-mat.mtrl-sci