arXiv subjects

Shujie Pan

Publications and source records attributed to Shujie Pan.

5 recordsLinked to original sources

arXiv2026

Conjugate phase-noise cancellation enables submicrometre dual-comb ranging with free-running megahertz-linewidth lasers

Frequency-domain dual-comb ranging combines rapid acquisition with interferometric sensitivity, but high-performance implementations often rely on mutually coherent or actively stabilised comb sources. Free-running sources can reduce this hardware burden, but their phase noise and drift of the optical frequency offset can blur radio-frequency (RF) comb teeth and weaken probe-reference phase correlation. Previous phase-slope implementations have therefore relied on sufficiently resolved RF teeth, within-coherence-length probe-reference paths or explicit digital tracking of these fluctuations. Here we demonstrate a low-cost frequency-domain dual-comb ranging architecture that combines independent free-running distributed-feedback (DFB) lasers with conjugate phase-noise cancellation (CPNC). By forming a self-conjugate signal before the phases of individual RF-comb teeth are extracted, CPNC cancels the common laser phase factor and drifting optical-frequency-offset term while retaining the distance-dependent phase slope. Using electro-optic combs seeded by DFB lasers with linewidths of 12 MHz and 9 MHz, we achieve an Allan deviation of $219~\mathrm{nm}$ at $246~\mu\mathrm{s}$ and reduce the single-frame distance standard deviation from $558~\mu\mathrm{m}$ to $9.31~\mu\mathrm{m}$ with CPNC. Across the tested megahertz-linewidth configurations, CPNC delivered minimum Allan deviations below $250~\mathrm{nm}$. These results show that CPNC enables submicrometre ranging in a low-cost frequency-domain dual-comb architecture with reduced source-stabilisation and phase-management complexity.

physics.optics↗

arXiv2025

Highly reliable, ultra-wideband, isolator-free quantum-dot mode-locked frequency combs for optical interconnects beyond 3.2Tb/s

Quantum dot mode-locked laser-based optical frequency combs are emerging as a critical solution for achieving low-cost, high-efficiency, and large-capacity optical interconnects. The practical implementation of wavelength division multiplexing interconnects necessitates a temperature-stable OFC source with a minimum 100 GHz channel spacing to enable high-bandwidth modulation while mitigating the complexity of optical filtering and detection. By leveraging the advanced co-doping technique and a colliding pulse mode-locking scheme, here, we report a compact, ultra-wideband, highly reliable, isolator-free 100 GHz-spacing InAs/GaAs QD OFC source operating up to a record temperature of 140 {\deg}C. The comb source delivers a record 3 dB optical bandwidth of 14.312 nm, containing flat-top comb lines, each supporting 128 Gb/s PAM-4 modulation, which results in a total throughput of 3.328 Tb/s with an extremely low power consumption of 0.394 pJ/bit at 25{\deg}C. Performance remains stable at 85 {\deg}C, with negligible degradation of device critical metrics. Remarkably, accelerated aging tests under harsh conditions (85 {\deg}C with 8x threshold current injection) revealed a mean time to failure of approximately 207 years. The QD OFC source demonstrated in this work, for the first time, establishes a concrete link between fundamental research on comb sources and their practical deployment in next-generation, high-density optical interconnect systems.

cond-mat.mes-hall↗

arXiv2024

In-situ Self-optimization of Quantum Dot Emission for Lasers by Machine-Learning Assisted Epitaxy

Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during growth is ideal, it has yet to be realized. In this work, we integrate in-situ reflection high-energy electron diffraction (RHEED) with machine learning (ML) to correlate the surface reconstruction with the photoluminescence (PL) of InAs/GaAs quantum dots (QDs), which serve as the active region of lasers. A lightweight ResNet-GLAM model is employed for the real-time processing of RHEED data as input, enabling effective identification of optical performance. This approach guides the dynamic optimization of growth parameters, allowing real-time feedback control to adjust the QDs emission for lasers. We successfully optimized InAs QDs on GaAs substrates, with a 3.2-fold increase in PL intensity and a reduction in full width at half maximum (FWHM) from 36.69 meV to 28.17 meV under initially suboptimal growth conditions. Our automated, in-situ self-optimized lasers with 5-layer InAs QDs achieved electrically pumped continuous-wave operation at 1240 nm with a low threshold current of 150 A/cm2 at room temperature, an excellent performance comparable to samples grown through traditional manual multi-parameter optimization methods. These results mark a significant step toward intelligent, low-cost, and reproductive light emitters production.

cond-mat.mes-hall↗

arXiv2024

On-Demand Growth of Semiconductor Heterostructures Guided by Physics-Informed Machine Learning

Developing tailored semiconductor heterostructures on demand represents a critical capability for addressing the escalating performance demands in electronic and optoelectronic devices. However, traditional fabrication methods remain constrained by simulation-based design and iterative trial-and-error optimization. Here, we introduce SemiEpi, a self-driving platform designed for molecular beam epitaxy (MBE) to perform multi-step semiconductor heterostructure growth through in-situ monitoring and on-the-fly feedback control. By integrating standard MBE reactors, physics-informed machine learning (ML) models, and parameter initialization, SemiEpi identifies optimal initial conditions and proposes experiments for heterostructure growth, eliminating the need for extensive expertise in MBE processes. As a proof of concept, we demonstrate the optimization of high-density InAs quantum dot (QD) growth with a target emission wavelength of 1240 nm, showcasing the power of SemiEpi. We achieve a QD density of 5 x 10^10 cm^-2, a 1.6-fold increase in photoluminescence (PL) intensity, and a reduced full width at half maximum (FWHM) of 29.13 meV, leveraging in-situ reflective high-energy electron diffraction monitoring with feedback control for adjusting growth temperatures. Taken together, our results highlight the potential of ML-guided systems to address challenges in multi-step heterostructure growth, facilitate the development of a hardware-independent framework, and enhance process repeatability and stability, even without exhaustive knowledge of growth parameters.

cond-mat.mtrl-sci↗

arXiv2024

Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication

Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers because of their superior carrier confinement and smaller active regions. However, the multifaceted nature of radiation effects on QDs resulted in ongoing controversies. Comprehensive testing under simulated space conditions is also necessary to validate their performance. In this work, we conducted radiation tests on various In(Ga)As/GaAs QD and quantum well (QW) materials and devices. Our results revealed that InAs/GaAs QDs with filling factors greater than 50% exhibit greater radiation hardness than those below 50%. Furthermore, most InAs/GaAs QDs showed superior radiation resistance compared to InGaAs/GaAs QW when exposed to low proton fluences of 1E11 and 1E12 cm-2, resulting from radiation-induced defects. The linewidth enhancement factor (LEF) of well-designed QD lasers remains remarkably stable and close to zero, even under proton irradiation at a maximum fluence of 7E13 cm-2, owing to their inherent insensitivity to irradiation-induced defects. These QD lasers demonstrate an exceptional average relative intensity noise (RIN) level of -162 dB/Hz, with only a 1 dB/Hz increase in RIN observed at the highest fluence, indicating outstanding stability. Furthermore, the lasers exhibit remarkable robustness against optical feedback, sustaining stable performance even under a feedback strength as high as -3.1 dB. These results highlight the significant potential of QD lasers for space laser communication applications, where high reliability and resilience to radiation and environmental perturbations are critical.

physics.app-ph↗