arXiv subjects

Shuming Yu

Publications and source records attributed to Shuming Yu.

5 recordsLinked to original sources

arXiv2026

One-Step Epitaxial Access to Rhombohedral Graphene Flat-Band States on Step-Bunched SiC

Rhombohedral graphene multilayers provide a moir\'e-free platform for correlated and topological flat-band physics, but direct, transfer-free epitaxial access to thickness-tunable multilayers remains limited. Here we report a one-step graphitization route on 4$^\circ$ off-axis 4H-SiC, in which high-temperature flash annealing simultaneously drives self-organized step bunching and multilayer graphene formation. Atomic-resolution cross-sectional scanning transmission electron microscopy identify local ABC registry and distinguish rhombohedral from Bernal stacking. The thickness is tuned from bilayer to more than twenty layers by varying single parameter, the annealing temperature. Angle-resolved photoemission spectroscopy directly tracks the thickness-dependent evolution from interface-dominated low-energy states toward pronounced near-Fermi-level flat-band spectral weight in thick multilayers. Low-temperature scanning tunneling microscopy and spectroscopy on a 17-layer film further reveal a 13.4 meV low-energy spectral reconstruction and a $\sqrt{3} \times \sqrt{3}$ Kekul\'e-like modulation, providing microscopic signatures consistent with an intervalley-mixed electronic texture. This one-step, transfer-free approach establishes step-bunched SiC as an epitaxial platform that links stacking engineering with moir\'e-free correlated flat-band electronic states.

cond-mat.mtrl-sci↗

arXiv2025

Surface band-selective moir\'e effect induces flat band in mixed-dimensional heterostructures

In this work, we reveal a curious type of moir\'e effect that selectively modifies the surface states of bulk crystal. We synthesize mixed-dimensional heterostructures consisting of a noble gas monolayer grow on the surface of bulk Bi(111), and determine the electronic structure of the heterostructures using angle-resolved photoemission spectroscopy. We directly observe moir\'e replicas of the Bi(111) surface states, while the bulk states remain barely changed. Meanwhile, we achieve control over the moir\'e period in the range of 25 {\AA} to 80 {\AA} by selecting monolayers of different noble gases and adjusting the annealing temperature. At large moir\'e periods, we observe hybridization between the surface band replicas, which leads to the formation of a correlated flat band. Our results serve as a bridge for understanding the moir\'e modulation effect from 2D to 3D systems, and provide a feasible approach for the realization of correlated phenomena through the engineering of surface states via moir\'e effects.

cond-mat.str-el↗

arXiv2025

Observation of quasi-steady dark excitons and gap phase in a doped semiconductor

Exciton plays an important role in optics and optics-related behaviors and leads to novel correlated phases like charge order, exciton insulator, and exciton-polariton condensation. Dark exciton shows distinct properties from bright one. However, it cannot be directly detected by conventional optic measurements. The electronic modulation effect of dark excitons in quasi-equilibrium distribution, critical for electronic devices in working status, is still elusive. Here, using angle-resolved photoemission spectroscopy, we report creating, detecting, and controlling dark excitons in the quasi-equilibrium distribution in a doped semiconductor SnSe2. Surprisingly, we observe an excitonic gap phase, with a conduction band opening an anisotropic gap. Our results broaden the scope of dark excitons, extending their studies from the picosecond timescale in the ultrafast photoemission process to conditions occurring under quasi-equilibrium. We reveal the light-matter interaction in the engineering of electronic structures and provide a new way to realize the excitonic gap phase in semiconductors with large band gaps.

cond-mat.mtrl-sci↗

arXiv2024

Surface region band enhancement in noble gas adsorption assisted ARPES on kagome superconductor RbV3Sb5

Electronic states near surface regions can be distinct from bulk states, which are paramount in understanding various physical phenomena occurring at surfaces and in applications in semiconductors, energy, and catalysis. Here, we report an abnormal surface region band enhancement effect in angle-resolved photoemission spectroscopy on kagome superconductor RbV3Sb5, by depositing noble gases with fine control. In contrast to conventional surface contamination, the intensity of surface region Sb band can be enhanced more than three times with noble gas adsorption. In the meantime, a hole-dope effect is observed for the enhanced surface region band, with other bands hardly changing. The doping effect is more pronounced with heavier noble gases. We propose that noble gas atoms selectively fill into alkali metal vacancy sites on the surface, which improves the surface condition, boosts surface region bands, and effectively dopes it with the Pauli repulsion mechanism. Our results provide a novel and reversible way to improve surface conditions and tune surface region bands by controlled surface noble gas deposition.

cond-mat.mtrl-sci↗

arXiv2023

High-density single-atom electrocatalytic centers on two-dimensional topological platinum tellurides with Te-vacancy superstructure

Chemical activation of the intrinsically inert basal planes of transition metal dichalcogenides (TMDs) is crucial for developing high-efficiency electrocatalysts for energy technology applications. Here we report the discovery of an efficient TMD-based topological catalyst for hydrogen evolution reaction (HER), containing high-density single-atom reactive centers on a few-layer (7x7)-PtTe2-x superstructure with a Te-vacancy density of x. Compared with pristine Pt(111), PtTe2, and (2x2)-PtTe2-x, (7x7)-PtTe2-x exhibits superior HER performance owing to its substantially increased density of undercoordinated Pt sites, and displays exceptional catalytic stability when operating at high current densities. Our first-principles calculations confirm that multiple types of undercoordinated Pt sites on (7x7)-PtTe2-x exhibit favorable hydrogen adsorption Gibbs free energies, and that the reactive sites can further increase their population upon increasing hydrogen coverage. Both the (2x2)- and (7x7)-PtTe2-x are also shown to possess nontrivial band topology with robust edge states that may further facilitate HER.

cond-mat.mtrl-sci↗