arXiv subjects

Shunda Zhang

Publications and source records attributed to Shunda Zhang.

7 recordsLinked to original sources

arXiv2026

Interface-Enhanced Superconductivity in Ultrathin TiN Proximitized by Topological Insulators

High-quality topological insulator-superconductor (TI-SC) heterostructure with an atomically sharp and well-controlled interface is crucial for realizing topological superconductivity and topological quantum qubit. In particular, many studies of TI-SC heterostructures have focused on inducing superconducting gap in the TI layer via proximity effect, while the active manipulation of superconductivity in the SC layer remains largely unexplored. In this work, we fabricated TI/TiN heterostructures using highly air-stable, ultrathin TiN films as the SC layer, and observed an interface-enhanced superconductivity that contrasts with the conventional proximity effect in superconductor-normal metal interface. Band structure measurements reveal a consistent shift of Dirac point with Tc enhancement. Interfacial charge transfer provides a plausible explanation for this shift based on the systematic analysis and is therefore a likely contributor to the observed Tc enhancement. First principles calculations elucidate the charge transfer pathways, highlighting the critical role of the interfacial BiTe (BiSe)bilayer. Our results not only provide a tunable TI-SC hybrid system with robust superconductivity at ultrathin thickness, but also offer a potential route for manipulating superconductivity in TI-SC heterostructures via interface engineering.

cond-mat.mtrl-sci↗

arXiv2023

Transformation of hexagonal Lu to cubic LuH$_{2+x}$ single-crystalline films

With the recent report of near ambient superconductivity at room temperature in the N-doped lutetium hydride (Lu-H-N) system, the understanding of cubic Lu-H compounds has attracted worldwide attention. Generally, compared to polycrystal structures with non-negligible impurities, the single-crystalline form of materials with high purity can provide an opportunity to show their hidden properties. However, the experimental synthesis of single-crystalline cubic Lu-H compounds has not been reported thus far. Here, we developed an easy way to synthesize highly pure LuH$_{2+x}$ single-crystalline films by the post-annealing of Lu single-crystalline films (purity of 99.99%) in the H$_2$ atmosphere. The crystal and electronic structures of films were characterized by X-ray diffraction, Raman spectroscopy, and electrical transport. Interestingly, Lu films are silver-white and metallic, whereas their transformed LuH$_{2+x}$ films become purple-red and insulating, indicating the formation of an unreported electronic state of Lu-H compounds possibly. Our work provides a novel route to synthesize and explore more single-crystalline Lu-H compounds.

cond-mat.mtrl-sci↗

arXiv2023

Synthesis of single-crystalline LuN films

In the nitrogen-doped lutetium hydride (Lu-H-N) system, the presence of Lu-N chemical bonds plays a key role in the emergence of possible room-temperature superconductivity at near ambient pressure. However, due to the synthesis of single-crystalline LuN being a big challenge, the understanding of LuN is insufficient thus far. Here, we report on the epitaxial growth of single-crystalline LuN films. The crystal structures of LuN films were characterized by high-resolution X-ray diffraction. The measurement of low-temperature electrical transport indicates the LuN film is semiconducting from 300 to 2 K, yielding an activation gap of $\sim$ 0.02 eV. Interestingly, negative magnetoresistances can be observed below 12 K, which can result from the defects and magnetic impurities in LuN films. Our results uncover the electronic and magnetic properties of single-crystalline LuN films.

cond-mat.mtrl-sci↗

arXiv2023

Electronic and magnetic properties of Lu and LuH$_2$

Clarifying the electronic and magnetic properties of lutetium, lutetium dihydride, and lutetium oxide is very helpful to understand the emergent phenomena in lutetium-based compounds (such as room-temperature superconductivity). However, this kind of study is still scarce at present. Here, we report on the electronic and magnetic properties of lutetium metals, lutetium dihydride powders, and lutetium oxide powders. Crystal structures and chemical compositions of these samples were characterized by X-ray diffraction and X-ray photoemission spectroscopy, respectively. Electrical transport measurements show that the resistance of lutetium has a linear behavior depending on temperature, whereas the resistance of lutetium dihydride powders is independent of temperature. More interestingly, paramagnetism-ferromagnetism-spin glass transitions were observed at near 240 and 200 K, respectively, in lutetium metals. Our work uncovered the complex magnetic properties of Lu-based compounds.

cond-mat.mtrl-sci↗

arXiv2023

Flexible but Refractory Single-Crystalline Hyperbolic Metamaterials

The fabrication of flexible single-crystalline plasmonic or photonic components in a scalable way is fundamentally important to flexible electronic and photonic devices with high speed, high energy efficiency, and high reliability. However, it remains to be a big challenge so far. Here, we have successfully synthesized flexible single-crystalline optical hyperbolic metamaterials by directly depositing refractory nitride superlattices on flexible fluoro phlogopite-mica substrates with magnetron sputtering. Interestingly, these flexible hyperbolic metamaterials show dual-band hyperbolic dispersion of dielectric constants with low dielectric losses and high figure-of-merit in the visible to near-infrared ranges. More importantly, the optical properties of these nitride-based flexible hyperbolic metamaterials show remarkable stability under either heating or bending. Therefore, the strategy developed in this work offers an easy and scalable route to fabricate flexible, high-performance, and refractory plasmonic or photonic components, which can significantly expand the applications of current electronic and photonic devices.

physics.optics↗

arXiv2021

Wafer-Scale Epitaxy of Flexible Nitride Films with Superior Plasmonic and Superconducting Performance

Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary-metal-oxide-semiconductor compatibility and remarkable performance in refractory plasmonics and superconducting quantum electronics. Epitaxial growth of flexible transition-metal nitride films, especially at wafer-scale, is fundamentally important for developing high-performance flexible photonics and superconducting electronics, but the study is rare thus far. This work reports the high-quality epitaxy of 2-inch titanium nitride (TiN) films on flexible fluorophlogopite-mica (F-mica) substrates via reactive magnetron sputtering. Combined measurements of spectroscopic ellipsometer and electrical transport reveal the superior plasmonic and superconducting performance of TiN/F-mica films owing to the high single crystallinity. More interestingly, the superconductivity of these flexible TiN films can be manipulated by the bending states, and enhanced superconducting critical temperature TC is observed in convex TiN films with in-plane tensile strain. Density-functional-theory calculations uncover that the strain can tune the electron-phonon interaction strength and resultant superconductivity of TiN films. This study provides a promising route towards integrating scalable single-crystalline conductive transition-metal nitride films with flexible electronics for high-performance plasmonics and superconducting electronics.

cond-mat.supr-con↗

arXiv2021

One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering

As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition. However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO3 films. Here, we developed a method to synthesize high-mobility epitaxial La-doped BaSnO3 films (mobility up to 121 cm2V-1s-1 at the carrier density ~ 4.0 x 10^20 cm-3 at room temperature) directly on SrTiO3 single crystal substrates using high-pressure magnetron sputtering. The structural and electrical properties of the La-doped BaSnO3 films were characterized by combined high-resolution X-ray diffraction, X-ray photoemission spectroscopy, and temperature-dependent electrical transport measurements. The room temperature electron mobility of La-doped BaSnO3 films in this work is 2 to 4 times higher than the reported values of the films grown by magnetron sputtering. Moreover, in the high carrier density range (n > 3 x 10^20 cm-3), the electron mobility value of 121 cm2V-1s-1 in our work is among the highest values for all reported doped BaSnO3 films. It is revealed that high argon pressure during sputtering plays a vital role in stabilizing the fully relaxed films and inducing oxygen vacancies, which benefit the high mobility at room temperature. Our work provides an easy and economical way to massively synthesize high-mobility transparent conducting films for transparent electronics.

cond-mat.mtrl-sci↗