arXiv subjects

Sieu D. Ha

Publications and source records attributed to Sieu D. Ha.

12 recordsLinked to original sources

arXiv2026

A digitally controlled silicon quantum processing unit

Commercially-relevant quantum computers will require large numbers of high-performing qubits that can be manufactured, integrated, and controlled at scale. Silicon exchange-only (EO) qubits are a strong candidate modality due to their control-signal simplicity and compatibility with advanced semiconductor manufacturing, but questions remain around the achievability of sufficiently low noise and a scalable control and wiring solution. Here we introduce a quantum processing unit composed of a custom-designed cryogenic CMOS controller, a novel high-density superconducting ribbon cable, and a low-noise EO qubit device. The quantum chip features a three-rail array of 54 exchange-coupled quantum dots, configurable to host up to 18 EO qubits. We integrate and use these components to demonstrate qubit performance for both single-qubit and entangling operations that advances the EO state of the art by an order of magnitude. We further validate this system by implementing a distance-5 repetition code and a quantum error detecting code then make detailed comparisons with simulations. Our approach facilitates a utility-scale quantum computer with manageable operational and capital requirements.

quant-ph↗

arXiv2025

Two-dimensional Si spin qubit arrays with multilevel interconnects

The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semiconductor manufacturing, with multiple back-end-of-line layers to show an extendable two-dimensional array of spins with fully controllable nearest-neighbor exchange interactions. In a device using three interconnect layers, we encode exchange-only qubits and achieve average single-qubit gate fidelities consistent with single-layer devices, including fidelities greater than 99.9%, as measured by blind randomized benchmarking. Moreover, with spin connectivity in two dimensions, we show that both linear and right-angle exchange-only qubits with high performance can be formed, enabling qubit array reconfigurability in the presence of defects. This extendable device platform demonstrates that industrial manufacturing techniques can be leveraged for scalable spin qubit technologies.

quant-ph↗

arXiv2022

Universal logic with encoded spin qubits in silicon

Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-yielding quantum dot arrays. Here we show a device made using the single-layer etch-defined gate electrode architecture that achieves both the required functional yield needed for full control and the coherence necessary for thousands of calibrated exchange pulses to be applied. We measure an average two-qubit Clifford fidelity of $97.1 \pm 0.2\%$ with randomized benchmarking. We also use interleaved randomized benchmarking to demonstrate the controlled-NOT gate with $96.3 \pm 0.7\%$ fidelity, SWAP with $99.3 \pm 0.5\%$ fidelity, and a specialized entangling gate that limits spreading of leakage with $93.8 \pm 0.7\%$ fidelity.

quant-ph↗

arXiv2021

A flexible design platform for Si/SiGe exchange-only qubits with low disorder

Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlapping gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data.

cond-mat.mes-hall↗

arXiv2020

Optimization of Quantum-dot Qubit Fabrication via Machine Learning

Precise nanofabrication represents a critical challenge to developing semiconductor quantum-dot qubits for practical quantum computation. Here, we design and train a convolutional neural network to interpret in-line scanning electron micrographs and quantify qualitative features affecting device functionality. The high-throughput strategy is exemplified by optimizing a model lithographic process within a five-dimensional design space and by demonstrating a new approach to address lithographic proximity effects. The present results emphasize the benefits of machine learning for developing robust processes, shortening development cycles, and enforcing quality control during qubit fabrication.

quant-ph↗

arXiv2014

Neuromimetic Circuits with Synaptic Devices based on Strongly Correlated Electron Systems

Strongly correlated electron systems such as the rare-earth nickelates (RNiO3, R = rare-earth element) can exhibit synapse-like continuous long term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and unlearning using nickelate-based synaptic devices in an electronic circuit compatible with both excitatory and inhibitory neurons. We establish a physical model for the device behavior based on electric-field driven coupled ionic-electronic diffusion that can be utilized for design of more complex systems. We use the model to simulate a variety of associate and non-associative learning mechanisms, as well as a feedforward recurrent network for storing memory. Our circuit intuitively parallels biological neural architectures, and it can be readily generalized to other forms of cellular learning and extinction. The simulation of neural function with electronic device analogues may provide insight into biological processes such as decision making, learning and adaptation, while facilitating advanced parallel information processing in hardware.

cond-mat.str-el↗

arXiv2014

Conductivity noise study of the insulator-metal transition and phase co-existence in epitaxial samarium nickelate thin films

Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually "bad metal", but also introduces a temperature driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of $\mathrm{SmNiO_3}$ using the slow time dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is found to be extremely large, being nearly eight orders of magnitude higher than thin films of common disordered metallic systems, and indicates electrical conduction via classical percolation in a spatially inhomogeneous medium. The higher order statistics of the fluctuations indicate a strong non-Gaussian component of noise close to the transition, attributing the inhomogeneity to co-existence of the metallic and insulating phases. Our experiment offers a new insight on the impact of lattice-orbital coupling on the microscopic mechanism of electron transport in the rare-earth nickelates.

cond-mat.str-el↗

arXiv2013

Origins of bad metal conductivity and the insulator-metal transition in the rare-earth nickelates

For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenberg's uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3 thin films using infrared spectroscopy while varying T and disorder. We show that the interaction between lattice distortions and Ni-O bond covalence explains both the bad metal conduction and the insulator-metal transition in the nickelates by shifting spectral weight over the large energy scale established by the Ni-O orbital interaction, thus enabling very low σwhile preserving the Drude model and without violating the uncertainty principle.

cond-mat.str-el↗

arXiv2013

Electrical switching dynamics and broadband microwave characteristics of VO2 RF devices

Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>10^3) in both electrically (i.e. by bias voltage, referred to as E-MIT) and thermally (T-MIT) driven transitions. We examine transient switching characteristics of the E-MIT and observe two distinguishable time scales for switching. We find an abrupt jump in conductivity with a rise time of the order of 10 ns followed by an oscillatory damping to steady state on the order of several μs. We characterize the RF power response in the On state and find that high RF input power drives VO2 further into the metallic phase, indicating that electromagnetic radiation-switching of the phase transition may be possible. We measure S-parameter RF properties up to 13.5 GHz. Insertion loss is markedly flat at 2.95 dB across the frequency range in the On state and sufficient isolation of over 25 dB is observed in the Off state. We are able to simulate the RF response accurately using both lumped element and 3D electromagnetic models. Extrapolation of our results suggests that optimizing device geometry can reduce insertion loss further and maintain broadband flatness up to 40 GHz.

cond-mat.mtrl-sci↗

arXiv2013

Electrostatic gating of metallic and insulating phases in SmNiO3 ultrathin films

The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 °C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the channel resistance and transition temperature. Resistance reduction is observed across both insulating and metallic phases with ~25% modulation at room temperature. We show that resistance modulation is predominantly due to electrostatic charge accumulation and not electrochemical doping by control experiments in inert and air en-vironments. We model the resistance behavior and estimate the accumulated sheet density (~1-2 x 10^14 cm^-2) and EDL capacitance (~12 μF/cm^2).

cond-mat.mtrl-sci↗

arXiv2013

Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism

The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with varying oxygen stoichiometry. We find that from room temperature through the high temperature insulator-metal transition, the Hall coefficient is hole-like and the Seebeck coefficient is electron-like. At low temperature the Néel transition induces a crossover in the sign of RH to electron-like, similar to the effects of spin density wave formation in metallic systems but here arising in an insulating phase ~200 K below the insulator-metal transition. We propose that antiferromagnetism can be stabilized by bandstructure even in insulating phases of correlated oxides, such as RNiO3, that fall between the limits of strong and weak electron correlation.

cond-mat.mtrl-sci↗

arXiv2011

Metal-insulator transition and electrically-driven memristive characteristics of SmNiO3 thin films

The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 °C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperature measurements in films grown on both substrates, with charge transport in-plane for LAO/SNO films and out-of-plane for Si/SNO films. Electrically-driven memristive behavior is realized in LAO/SNO films, suggesting that SNO may be relevant for neuromorphic devices.

cond-mat.mtrl-sci↗