arXiv subjects

Silke Kuhn

Publications and source records attributed to Silke Kuhn.

5 recordsLinked to original sources

arXiv2026

Purcell enhanced and blinking free single photons from InAs/GaAs quantum dots in deterministically placed circular Bragg gratings

The development of efficient, deterministic, and tunable single-photon sources is a cornerstone for the realization of long-distance quantum communication, quantum repeaters, and photonic quantum computing technologies. In this study, we demonstrate a bright, charge-tunable single-photon source in the 900 nm wavelength range based on InAs quantum dots (QDs) embedded in a p-i-n doped GaAs membrane, which shows blinking free emission. We use a modified circular Bragg grating (CBG) as a micro-resonator. By adding fourfold symmetric bridges in a labyrinth-like geometry, we provide a conductive pathway to the central disk, thereby enabling electrical contact to the QD while maintaining high Purcell enhancement and photon extraction efficiency (PEE). For the negative trion (X-), we demonstrate a lifetime of $44.3 \pm 0.2$ ps - corresponding to a Purcell factor of $18.0 \pm 0.7$ and a PEE of $68.1% \pm 3.1$ %. Furthermore, the device is blinking-free with very low multi-photon contribution, evidenced by a second-order autocorrelation value $g(2)(0) < 0.017 \pm 0.015$. By applying a vertical diode bias, we demonstrate precise charge-state control, resolving distinct emission plateaus ranging from the single negatively charged trion ($X^-$) to triply negatively charged excitons ($X^{3-}$). These results showcase a robust architecture that simultaneously provides high efficiency, high repetition rates, and deterministic charge control, fulfilling key requirements for the next generation of quantum network hardware.

cond-mat.mes-hall↗

arXiv2025

All-photonic entanglement swapping with remote quantum dots

Entanglement swapping is a protocol that details how to create entanglement between previously uncorrelated particles. Its all-photonic version - mediated by the interference of photon pairs generated by separate quantum systems-finds disparate applications in quantum networks. So far, all-photonic entanglement swapping between remote systems has been implemented only using sources that operate probabilistically. However, the scaling up of quantum networks requires deterministic quantum emitters that do not suffer from a trade-off between degree of entanglement and photonpair generation rate. Here, we demonstrate all-photonic entanglement swapping using photon-pairs generated by two separate GaAs quantum dots. The emitters are deterministically embedded in hybrid semiconductor-piezoelectric devices that make the entangled-photons from two dissimilar quantum dots nearly identical. Entanglement swapping is demonstrated with a fidelity as high as 0.71(2), more than 10 standard deviations above the classical limit. The experimental data are quantitatively explained by a theoretical model that also suggests how to boost the protocol performances. Our work opens the path to the exploitation of quantum dot entangled-photon sources in quantum repeater networks.

quant-ph↗

arXiv2025

Gate-controlled analog memcapacitance in LaAlO3/SrTiO3 interface-based devices

Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here, we demonstrate memcapacitor structures utilizing a quasi 2-dimensional electron gas, formed at the crystalline LaAlO3/SrTiO3 heterointerface, as electrodes and SiO2/SrTiO3 as dielectric layer. The observed memcapacitance originates from the charge localization in a lateral floating gate, while an applied gate voltage enables reversible tuning of the device capacitance. Furthermore, preprogrammed or erased gate biases enable controllable shifts of the capacitance hysteresis window toward positive or negative bias, leading to an enlarged capacitance gap at zero bias. A memcapacitor model developed for this system reproduces the main features of the experimental capacitance hysteresis, capturing the effects of charge fluctuations and dielectric frequency modulation within the oxide layer. The demonstrated low-voltage operation and gate tunability of oxide interface-based memcapacitors highlight their potential for power-efficient, capacitor-based neuromorphic and synaptic electronic architectures.

physics.app-ph↗

arXiv2025

Oxide Interface-Based Polymorphic Electronic Devices for Neuromorphic Computing

Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor (CMOS)-technology, faces several critical challenges including scaling limitation of devices [1, 2], separation of computation and memory units [3] and most importantly, overall system energy efficiency [4]. While numerous materials with emergent functionalities have been proposed to overcome these limitations, scalability, reproducibility, and compatibility remain critical obstacles [5, 6]. Here, we demonstrate oxide-interface based polymorphic electronic devices with programmable transistor, memristor, and memcapacitor functionalities by manipulating the quasi-two-dimensional electron gas in LaAlO3/SrTiO3 heterostructures [7, 8] using lateral gates. A circuit utilizing two polymorphic functionalities of transistor and memcapacitor exhibits nonlinearity and short-term memory, enabling implementation in physical reservoir computing. An integrated circuit incorporating transistor and memristor functionalities is utilized for the transition from short- to long-term synaptic plasticity and for logic operations, along with in-situ logic output storage. The same circuit with advanced reconfigurable synaptic logic operations presents high-level multi-input decision-making tasks, such as patient-monitoring in healthcare applications. Our findings pave the way for oxide-based monolithic integrated circuits in a scalable, silicon compatible, energy efficient single platform, advancing both the polymorphic and neuromorphic computings.

cond-mat.dis-nn↗

arXiv2017

Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces

We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off the inherent memory functionality (memristance). For large and small gate voltages a simple non-linear resistance characteristic is observed while a pinched hysteresis loop and memristive switching occurs in an intermediate voltage range. The memristance is further controlled by the density of oxygen vacancies, which is tuned by annealing the sample at 300 °C in nitrogen atmosphere. Depending on the annealing time the memristance at zero gate voltage can be switched on and off leading to normally-on and normally-off memristors. The presented device offers reversible and irreversible control of memristive characteristics by gate voltages and annealing, respectively, which may allow to compensate fabrication variabilities of memristors that complicate the realization of large memristor-based neural networks.

cond-mat.mes-hall↗