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Silvia Picozzi

Publications and source records attributed to Silvia Picozzi.

At least 37 records · Page 2Linked to original sources

Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn$_3$Si$_2$Te$_6$

Mn$_3$Si$_2$Te$_6$ is a rare example of a layered ferrimagnet. It has recently been shown to host a colossal angular magnetoresistance as the spin orientation is rotated from the in- to out-of-plane direction, proposed to be underpinned by a topological nodal-line degeneracy in its electronic structure. Nonetheless, the origins of its ferrimagnetic structure remain controversial, while its experimental electronic structure, and the role of correlations in shaping this, are little explored to date. Here, we combine x-ray and photoemission-based spectroscopies with first-principles calculations, to probe the elemental-selective electronic structure and magnetic order in Mn$_3$Si$_2$Te$_6$. Through these, we identify a marked Mn-Te hybridisation, which weakens the electronic correlations and enhances the magnetic anisotropy. We demonstrate how this strengthens the magnetic frustration in Mn$_3$Si$_2$Te$_6$, which is key to stabilising its ferrimagnetic order, and find a crucial role of both exchange interactions extending beyond nearest-neighbours and anti-symmetric exchange in dictating its ordering temperature. Together, our results demonstrate a powerful methodology of using experimental electronic structure probes to constrain the parameter space for first-principles calculations of magnetic materials, and through this approach, reveal a pivotal role played by covalency in stabilising the ferrimagnetic order in Mn$_3$Si$_2$Te$_6$.

cond-mat.mtrl-sci↗

Microscopic origin of magnetism in monolayer $3d$ transition metal dihalides

Motivated by the recent wealth of exotic magnetic phases emerging in two-dimensional frustrated lattices, we investigate the origin of possible magnetism in the monolayer family of triangular lattice materials $MX_2$ ($M$={V, Mn, Ni}, $X$={Cl, Br, I}). We first show that consideration of general properties such as filling and hybridization enables to formulate trends for the most relevant magnetic interaction parameters. In particular, we observe that the effects of spin-orbit coupling (SOC) can be effectively tuned through the ligand elements as the considered 3$d$ transition metal ions do not strongly contribute to the anisotropic component of the inter-site exchange interaction. Consequently, we find that the corresponding SOC matrix-elements differ significantly from the atomic limit. In a next step and by using two complementary approaches based on first principles, we extract realistic effective spin models and find that in the case of heavy ligand elements, SOC effects manifest in anisotropic exchange and single-ion anisotropy only for specific fillings.

cond-mat.str-el↗

Evidence for a single-layer van der Waals multiferroic

Multiferroic materials have garnered wide interest for their exceptional static and dynamical magnetoelectric properties. In particular, type-II multiferroics exhibit an inversion-symmetry-breaking magnetic order which directly induces a ferroelectric polarization through various mechanisms, such as the spin-current or the inverse Dzyaloshinskii-Moriya effect. This intrinsic coupling between the magnetic and dipolar order parameters results in record-strength magnetoelectric effects. Two dimensional materials possessing such intrinsic multiferroic properties have been long sought for harnessing magnetoelectric coupling in nanoelectronic devices. Here, we report the discovery of type-II multiferroic order in a single atomic layer of the transition metal-based van der Waals material NiI2. The multiferroic state of NiI2 is characterized by a proper-screw spin helix with given handedness, which couples to the charge degrees of freedom to produce a chirality-controlled electrical polarization. We use circular dichroic Raman measurements to directly probe the magneto-chiral ground state and its electromagnon modes originating from dynamic magnetoelectric coupling. Using birefringence and second-harmonic generation measurements, we detect a highly anisotropic electronic state simultaneously breaking three-fold rotational and inversion symmetry, and supporting polar order. The evolution of the optical signatures as a function of temperature and layer number surprisingly reveals an ordered magnetic, polar state that persists down to the ultrathin limit of monolayer NiI2. These observations establish NiI2 and transition metal dihalides as a new platform for studying emergent multiferroic phenomena, chiral magnetic textures and ferroelectricity in the two-dimensional limit.

cond-mat.str-el↗

Finite-size effects on the ferroelectricity in rhombohedral HfO$_2$

In this work we analyze the finite-size effects on the structural properties and on the polarization of the rhombohedral phase of HfO$_2$ subjected to a biaxial compressive strain. We show how the presence of surface charges affects the polarization, leading to a strong reduction with respect to its bulk value. This reduction can be ascribed to two mechanisms: the coupling between compressive strain and the phase-transition order parameter; the changes in the ferroelectric distortion. We give two alternative explanations of this phenomenon: from an atomistic point of view, analyzing the evolution of the bond lengths, and from a symmetry-analysis point of view, considering the changes in the amplitude of the symmetry-allowed distortions, when a slab configuration is considered. These results are independent on the slab-thickness in the considered range, suggesting the absence of a critical thickness for ferroelectricity in HfO$_2$, in agreement with the proposed improper nature of hafnia ferroelectricity.

cond-mat.mtrl-sci↗

Curved Magnetism in CrI$_3$

Curved magnets attract considerable interest for their unusually rich phase diagram, often encompassing exotic (e.g., topological or chiral) spin states. Micromagnetic simulations are playing a central role in the theoretical understanding of such phenomena; their predictive power, however, rests on the availability of reliable model parameters to describe a given material or nanostructure. Here we demonstrate how non-collinear-spin polarized density-functional theory can be used to determine the flexomagnetic coupling coefficients in real systems. By focusing on monolayer CrI$_3$, we find a crossover as a function of curvature between a magnetization normal to the surface to a cycloidal state, which we rationalize in terms of effective anisotropy and Dzyaloshinskii-Moriya contributions to the magnetic energy. Our results reveal an unexpectedly large impact of spin-orbit interactions on the curvature-induced anisotropy, which we discuss in the context of existing phenomenological models.

cond-mat.mtrl-sci↗

Towards machine learning for microscopic mechanisms: a formula search for crystal structure stability based on atomic properties

Machine Learning (ML) techniques are revolutionizing the way to perform efficient materials modeling. Nevertheless, not all the ML approaches allow for the understanding of microscopic mechanisms at play in different phenomena. To address the latter aspect, we propose a combinatorial machine-learning approach to obtain physical formulas based on simple and easily-accessible ingredients, such as atomic properties. The latter are used to build materials features that are finally employed, through Linear Regression, to predict the energetic stability of semiconducting binary compounds with respect to zincblende and rocksalt crystal structures. The adopted models are trained using dataset built from first-principles calculations. Our results show that already one-dimensional (1D) formulas well describe the energetics; a simple grid-search optimization of the automatically-obtained 1D-formulas enhances the prediction performances at a very small computational cost. In addition, our approach allows to highlight the role of the different atomic properties involved in the formulas. The computed formulas clearly indicate that "spatial" atomic properties (i.e. radii indicating maximum probability densities for $s,p,d$ electronic shells) drive the stabilization of one crystal structure with respect to the other, suggesting the major relevance of the radius associated to the $p$-shell of the cation species.

cond-mat.mtrl-sci↗

Tuning of magnetic structures topology via single-ion anisotropy and magnetic field in frustrated 2D semiconductors

The effects of competing magnetic interactions in stabilizing different spin configurations are drawing a renewed attention in order to both unveil emerging topological spin textures and to highlight microscopic mechanisms leading to their stabilization. The possible key role of the two-site exchange anisotropy in selecting specific helicity and vorticity of skyrmionic lattices has only recently been proposed. In this work we explore the phase diagram of a frustrated localized magnet on a two-dimensional centrosymmetric triangular lattice, focusing on the interplay between the two-ion anisotropy (TIA) and the single-ion anisotropy (SIA). The effects of an external magnetic field applied perpendicularly to the magnetic layer are also investigated. By means of Monte Carlo simulations, we find a profusion of different spin configurations, going from trivial to high-order Q skyrmionic and meronic lattices. In closer detail, we find that a dominant role is played by the two-ion over the single-ion anisotropy in determining the planar spin texture, whereas the strength and sign of SIA, together with the magnitude of the magnetic field, tune the perpendicular spin components, mostly affecting the polarity (and, in turn, the topology) of the spin-texture. Our analysis confirms the crucial role of anisotropic symmetric exchange in systems with dominant short-range interactions, at the same time predicting a rich variety of complex magnetic textures that may arise from a fine tuning of competing anisotropic mechanisms.

cond-mat.mtrl-sci↗

Trilinear coupling driven ferroelectricity in HfO$_2$

Ferroelectricity in hafnia is often regarded as a breakthrough discovery in ferroelectrics, potentially able to revolutionize the whole field. Despite increasing interests, a comprehensive understanding of the many factors driving the ferroelectric stabilization is still lacking. We here address the phase transition in terms of a Landau-theory-based approach, by analyzing symmetry-allowed distortions connecting the high-symmetry paraelectric tetragonal phase to the low-symmetry polar orthorhombic phase. By means of first-principles simulations, we find that the $Γ_{3-}$ polar mode is only weakly unstable, whereas the other two symmetry-allowed distortions, non-polar Y$_{2+}$ and anti-polar Y$_{4-}$ are hard modes. None of the modes, taken alone or combined with one other mode, is able to drive the transition: the key factor in stabilizing the polar phase is identified as the strong trilinear coupling among the three modes. Furthermore, the experimentally acknowledged importance of substrate-induced effects in the growth of HfO$_2$ ferroelectric thin films, along with the lack of a clear order parameter in the transition, suggested the extension of our analysis to strain effects. Our findings suggest a complex behaviour of the Y$_{2+}$ mode, which become unstable under certain strain conditions and an overall unstable behaviour for the $Γ_{3-}$ polar mode for all the strain states. A robust result emerges from our analysis: independently of the different applied strain (compressive or tensile, applied along orthorhombic axes), the need of a simultaneous excitation of the three coupled modes remain unaltered. Finally, when applied to mimic experimental growth conditions under strain, our analysis show a further stabilization of the ferroelectric phase with respect to the unstrained case, in agreeement with experimental findings.

cond-mat.mtrl-sci↗

Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe

Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit coupling, and non-volatility endowed by ferroelectricity. However, their potential for spintronics has been little explored. Here, we demonstrate the non-volatile, ferroelectric control of spin-to-charge conversion at room temperature in epitaxial GeTe films. We show that ferroelectric switching by electrical gating is possible in GeTe despite its high carrier density. We reveal a spin-to-charge conversion as effective as in Pt, but whose sign is controlled by the orientation of the ferroelectric polarization. The comparison between theoretical and experimental data suggests that spin Hall effect plays a major role for switchable conversion. These results open a route towards devices combining spin-based logic and memory integrated into a silicon-compatible material.

cond-mat.mtrl-sci↗

Magnetic properties of bilayer VI3: Role of trigonal crystal field and electric-field tuning

The magnetic properties of two-dimensional VI3 bilayer are the focus of our first-principles analysis, highlighting the role of trigonal crystal-field effects and carried out in comparison with the CrI3 prototypical case, where the effects are absent. In VI3 bilayers, the empty a1g state - consistent with the observed trigonal distortion - is found to play a crucial role in both stabilizing the insulating state and in determining the inter-layer magnetic interaction. Indeed, an analysis based on maximally localized Wannier functions allows to evaluate the interlayer exchange interactions in two different VI3 stackings (labelled AB and AB'), to interpret the results in terms of virtual-hopping mechanism, and to highlight the strongest hopping channels underlying the magnetic interlayer coupling. Upon application of electric fields perpendicular to the slab, we find that the magnetic ground-state in the AB' stacking can be switched from antiferromagnetic to ferromagnetic, suggesting VI3 bilayer as an appealing candidate for electric-field-driven miniaturized spintronic devices.

cond-mat.mtrl-sci↗

Half-metallic ferromagnetism in layered CdOHCl induced by hole doping

Next-generation spintronic devices will benefit from low-dimensionality, ferromagnetism, and half-metallicity, possibly controlled by electric fields. We find these technologically-appealing features to be combined with an exotic microscopic origin of magnetism in doped CdOHCl, a van der Waals material from which 2D layers may be exfoliated. By means of first principles simulations, we predict homogeneous hole-doping to give rise to $p$-band magnetism in both the bulk and monolayer phases and interpret our findings in terms of Stoner instability: as the Fermi level is tuned via hole-doping through singularities in the 2D-like density of states, ferromagnetism develops with large saturation magnetization of 1 $μ_B$ per hole, leading to a half-metallic behaviour for layer carrier densities of the order of 10$^{14}$ cm$^{-2}$. Furthermore, we put forward electrostatic doping as an additional handle to induce magnetism in monolayers and bilayers of CdOHCl. Upon application of critical electric fields perpendicular to atomically-thin-films (as low as 0.2 V/$A°$ and 0.5 V/$A°$ in the bilayer and monolayer case, respectively), we envisage the emergence of a magnetic half-metallic state. The different behaviour of monolayer vs bilayer systems, as well as an observed asymmetric response to positive and negative electric fields in bilayers, are interpreted in terms of intrinsic polarity of CdOHCl atomic stacks, a distinctive feature of the material. In perspective, given the experimentally accessible magnitude of critical fields in bilayer of CdOHCl, one can envisage $p$ band magnetism to be exploited in miniaturized spintronic devices.

cond-mat.mtrl-sci↗

Robust Magnetoelectric Effect in Decorated Graphene/In2Se3 Heterostructure

Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM) decorated graphene layer via an FE induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in TM decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of FE controlled magnetism in 2D materials.

cond-mat.mtrl-sci↗

Spontaneous skyrmionic lattice from anisotropic symmetric exchange in a Ni-halide monolayer

Topological spin structures, such as magnetic skyrmions, hold great promises for data storage applications, thanks to their inherent stability. In most cases, skyrmions are stabilized by magnetic fields in non-centrosymmetric systems displaying the chiral Dzyaloshinskii-Moriya exchange interaction, while spontaneous skyrmion lattices have been reported in centrosymmetric itinerant magnets with long-range interactions. Here, a spontaneous anti-biskyrmion lattice with unique topology and chirality is predicted in the monolayer of a semiconducting and centrosymmetric metal halide, NiI$_2$. Our first-principles and Monte Carlo simulations reveal that the anisotropies of the short-range symmetric exchange, when combined with magnetic frustration, can lead to an emergent chiral interaction that is responsible for the predicted topological spin structures. The proposed mechanism finds a prototypical manifestation in two-dimensional magnets, thus broadening the class of materials that can host spontaneous skyrmionic states.

cond-mat.mtrl-sci↗

Bulk Rashba Effect in Multiferroics: a theoretical prediction for BiCoO3

We put forward the concept of a bulk Rashba effect emerging in a multiferroic material, such as an antiferromagnetic system with a polar crystal structure. According to symmetry considerations, while time-reversal and space-inversion symmetries are both broken, there exist specific spin flipping operations that relate opposite spin sites in the magnetic crystal structure. As a consequence, at certain high-symmetry points in the momentum space, the magnetic point group allows the spin angular momentum to be locked to the linear momentum, a typical feature of the Rashba effect. In such a case, spin-splitting effects induced by spin-orbit coupling can arise, similar to what happens in non-magnetic Rashba systems. As a prototypical example, ab-initio calculations of antiferromagnetic BiCoO3 in the polar structure reveal that a large Rashba-like band- and spin- splitting occurs at the conduction band bottom, having a large weight from Bi-p orbital states. Moreover, we show that the spin texture of such a multiferroic can be modulated by applying a magnetic field. In particular, an external in-plane magnetic field is predicted not only to induce spin-canting, but also a distortion of the energy isocontours and a shift of the spin-vortex (centered on the high-symmetry point and characteristic of Rashba effect) along a direction perpendicular to the applied field.

cond-mat.str-el↗

Band splitting with vanishing spin polarizations in noncentrosymmetric crystals

The Dresselhaus and Rashba effects are well-known phenomena in solid-state physics, in which spin-orbit coupling (SOC) splits spin-up and spin-down energy bands of nonmagnetic non-centrosymmetric crystals. Here, we discover a new phenomenon, dubbed as band splitting with vanishing spin polarizations (BSVSP), in which, as usual, SOC splits the energy bands in nonmagnetic non-centrosymmetric systems; surprisingly, however, both split bands show no net spin polarization along certain high-symmetry lines in the Brillouin zone. In order to rationalize this phenomenon, we propose a new classification of point groups into pseudo-polar and non-pseudo-polar groups. By means of first-principles simulations, we demonstrate that BSVSP can take place in both symmorphic (e.g., bulk GaAs) and non-symmorphic systems (e.g., two dimensional ferroelectric SnTe). Furthermore, we propose a novel linear magnetoelectric coupling in reciprocal space, which could be employed to tune the spin polarization with an external electric field. The BSVSP effect and its manipulation could therefore pave a new way to novel spintronic devices.

cond-mat.mtrl-sci↗

Persistent spin helix in Rashba-Dresselhaus ferroelectric CsBiNb2O7

Ferroelectric Rashba semiconductors (FERSC) are a novel class of multifunctional materials showing a giant Rashba spin splitting which can be reversed by switching the electric polarization. Although they are excellent candidates as channels in spin field effect transistors, the experimental research has been limited so far to semiconducting GeTe, in which ferroelectric switching is often prevented by heavy doping and/or large leakage currents. Here, we report that CsBiNb2O7, a layered perovskite of Dion-Jacobson type, is a robust ferroelectric with sufficiently strong spin-orbit coupling and spin texture reversible by electric field. Moreover, we reveal that its topmost valence band's spin texture is quasi-independent from the momentum, as a result of the low symmetry of its ferroelectric phase. The peculiar spin polarization pattern in the momentum space may yield the so-called "persistent spin helix", a specific spin-wave mode which protects the spin from decoherence in diffusive transport regime, potentially ensuring a very long spin lifetime in this material.

cond-mat.mtrl-sci↗

Fe/GeTe(111) heterostructures as an avenue towards 'ferroelectric Rashba semiconductors'-based spintronics

By performing density functional theory (DFT) and Green's functions calculations, complemented by X-ray Photoemission Spectroscopy, we investigate the electronic structure of Fe/GeTe(111), a prototypical ferromagnetic/Rashba-ferroelectric interface. We reveal that such system exhibits several intriguing properties resulting from the complex interplay of exchange interaction, electric polarization and spin-orbit coupling. Despite a rather strong interfacial hybridization between Fe and GeTe bands, resulting in a complete suppression of the surface states of the latter, the bulk Rashba bands are hardly altered by the ferromagnetic overlayer. This could have a deep impact on spin dependent phenomena observed at this interface, such as spin-to-charge interconversion, which are likely to involve bulk rather than surface Rashba states.

cond-mat.mtrl-sci↗

Possible emergence of a skyrmion phase in ferroelectric GaMo$_4$S$_8$

Polar lacunar spinels, such as GaV$_4$S$_8$ and GaV$_4$Se$_8$, were proposed to host skyrmion phases under magnetic field. In this work, we put forward, as a candidate for Néel-type skyrmion lattice, the isostructural GaMo$_4$S$_8$, here systematically studied via both first-principles calculations and Monte Carlo simulations of model Hamiltonian. Electric polarization, driven by Jahn-Teller distortion, is predicted to arise in GaMo$_4$S$_8$, showing a comparable size but an opposite sign with respect to that evaluated in V-based counterparts and explained in terms of different electron counting arguments and resulting distortions. Interestingly, a larger spin-orbit coupling of 4d orbitals with respect to 3d orbitals in vanadium-spinels leads to stronger Dzyaloshinskii-Moriya interactions, which are beneficial to stabilize a cycloidal spin texture, as well as smaller-sized skyrmions (radius<10 nm). Furthermore, the possibly large exchange anisotropy of GaMo4S8 may lead to a ferroelectric-ferromagnetic ground state, as an alternative to the ferroelectric-skyrmionic one, calling for further experimental verification.

cond-mat.mtrl-sci↗