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Simon Crampin

Publications and source records attributed to Simon Crampin.

4 recordsLinked to original sources

Electron localization, charge redistribution, and emergence of topological states at graphite junctions

Low-energy electronic behavior in graphite crystals is highly dependent on the relative stacking arrangement of the constituent layers. Topologically non-trivial electronic states can arise due to interrupted rhombohedral (ABC) stacking, localized at the edges of the stacking region, but not in the case of Bernal (AB) stacking. Here, we study the electronic properties of junctions between half-crystals of graphite of either Bernal or rhombohedral stacking, using a charge self-consistent tight-binding method and embedding potentials to account for the influence of layers far from the junction. We find junction-localized electronic states to be a ubiquitous feature, and all systems but one involving a rhombohedral half-crystal support a flat-band expected to exhibit electronic instabilities and strongly-correlated states. Nascent flat-band states associated with finite rhombohedral stacking sequences extend the physics into pure Bernal systems.

cond-mat.mes-hall

Rhombohedral graphite junctions as a platform for continuous tuning between topologically trivial and non-trivial electronic phases

Manipulating the topological properties of quantum states can provide a way to protect them against disorder. However, typically, changing the topology of electronic states in a crystalline material is challenging because their nature is underpinned by chemical composition and lattice symmetry that are difficult to modify. We propose junctions between rhombohedral graphite crystals as a platform that enables smooth transition between topologically trivial and non-trivial regimes distinguished by the absence or presence of topological junction states. By invoking an analogy with the Su-Schrieffer-Heeger model, the appearance of topological states is related to the symmetry of the atomic stacking at the interface between the crystals. The possibility to explore both the topological and non-topological phases is provided by sliding the crystals with respect to each other.

cond-mat.mes-hall

Lattice vibrations of γ- and \b{eta}-coronene from Raman and theory

We combine polarization-resolved low frequency Raman microscopy and dispersion-corrected density-functional calculations (DFT-D3) to study polymorph-dependent lattice vibrations in coronene, a model molecular system for nanographenes and disc-like organic semiconductors that exhibits two crystalline structures with distinct electronic and optical properties. Changes in low energy Raman-active lattice phonons are followed across the γ- to \b{eta}-phase transition at 150 K. Raman frequencies calculated using DFT-D3 agree to within 4 cm-1, and on the basis of polarisation dependence of peak positions and intensities we achieve a clear mode assignment. Studies of the associated atomic motions show how the pure librational and rotational modes of γ-coronene change into mixed roto-librations in the \b{eta}-phase, explaining the remarkable differences in Raman spectra of the two phases.

cond-mat.mtrl-sci

Control of polymorphism in coronene by the application of magnetic fields

Coronene, a polyaromatic hydrocarbon, has been crystallized for the first time in a different polymorph using a crystal growth method that utilizes magnetic fields to access a unit cell configuration that was hitherto unknown. Crystals grown in magnetic field of 1 T are larger, have a different appearance to those grown in zero field and retain their structure in ambient conditions. We identify the new form, beta-coronene, as the most stable at low temperatures. As a result of the new supramolecular configuration we report significantly altered electronic, optical and mechanical properties.

cond-mat.mtrl-sci