arXiv subjects

Simon R. Phillpot

Publications and source records attributed to Simon R. Phillpot.

6 recordsLinked to original sources

arXiv2026

Mechanisms of Microstructural Evolution and Degradation in Aluminum under High-Damage Irradiation

Aluminum alloys are widely used in research reactor systems, yet the mechanisms governing irradiation-induced degradation remain poorly understood. Here we combine conventional cascade-overlap molecular dynamics simulations with an accelerated Iterative Kinetic Approach (IKA) to investigate defect evolution in single-crystal Al subjected to 50 keV He irradiation. Benchmarking shows that IKA reproduces the essential defect kinetics of cascade simulations while enabling access to substantially higher accumulated damage. By extending the IKA to higher damage levels, we identified three distinct regimes governing radiation-induced degradation in Al: recombination-driven annihilation, defect accumulation, and sink-controlled absorption. At higher damage, Frank loops dissociate into Shockley partials and stair-rod loops, ultimately driving the nucleation and growth of stacking-fault tetrahedra (SFTs). These transformations progressively convert mobile defects into SFTs. Ultimately, the synergistic effect of interstitial and vacancy loops and SFTs increases irradiation hardening in Al at 300 K. This work provides insight into irradiation-induced degradation in aluminum reactor materials.

cond-mat.mtrl-sci↗

arXiv2026

Machine-Learned Interatomic Potential for Predictive Simulation of MoS2 Epitaxy

A machine-learned interatomic potential (MLIP) for multilayer MoS2 was developed using the ultra-fast force field (UF3) framework. The UF3 MLIP reproduces key properties in strong agreement with DFT including lattice constants, interlayer binding energies, and phase-stability. Furthermore, the potential reasonably captures the phonon spectra and the highly anisotropic elastic tensor across monolayer (1H) and bulk (2H, 3R) MoS2 phases. Critically, defect and edge formation energies are captured with high fidelity, exhibiting a strong correlation with DFT (R^2 = 0.91) across ten defective monolayers and reproducing the relative difference between the free energies of zigzag and armchair edges within 5% of DFT. Non-equilibrium molecular dynamics simulations reveal layered homoepitaxial growth consistent with experimental observations, demonstrating the formation of van der Waals gaps between successive epilayers and triangular domains bounded by zigzag edges. The robust UF3 MLIP, which is only ~2X slower than the fastest empirical potentials, enables large-scale atomistic simulations of MoS2 epitaxial growth.

cond-mat.mtrl-sci↗

arXiv2026

Effect of Misfit and Threading Dislocations on Surface Energies of PbTe-PbSe Interfaces

This work quantifies the effect of misfit and threading dislocations on the surface energies of PbTe-PbSe interfaces, with the defect structures of the interfaces being obtained from atomistic and multiscale simulations of their manufacturing processes. Simulation results show that direct bonding produces semi-coherent interfaces with two-dimensional misfit dislocation networks, while heteroepitaxial processes produce complex three-dimensional dislocation structures with both misfit and threading dislocations. Surface energies at these interfaces were determined by computing the interaction energies across these interfaces. Compared with coherent interfaces, directly bonded interfaces exhibit up to ~23% lower surface energy, while the surface energies of epitaxially grown interfaces can be nearly 50% lower. The results demonstrate the significant effects of dislocations on interfacial energy.

cond-mat.mtrl-sci↗

arXiv2019

Dynamics of Graphene/Al Interfaces using COMB3 Potentials

This work describes the development of a third-generation charge optimized many-body (COMB3) potential for Al-C and its application to the investigation of aluminum/graphene nanostructures. In particular, the new COMB3 potential was used to investigate the interactions of aluminum surfaces with pristine and defective graphene sheets. Classical molecular dynamics simulations were performed at temperatures of 300-900K to investigate the structural evolution of these interfaces. The results indicate that although the interfaces between Al and graphene are mostly weakly bonded, aluminum carbide can form under the right conditions, including the presence of vacancy defects in graphene, undercoordinated Al in surface regions with sharp boundaries, and at high temperatures. COMB3 potentials were further used to examine a new method to transfer graphene between Al surfaces as well as between Al and Cu surfaces by controlling the angle of the graphene between the two surfaces. The findings indicate that by controlling the peeling angles it is possible to transfer graphene without any damage from the surface having greater graphene/surface adhesion to another surface with less adhesion.

cond-mat.mtrl-sci↗

arXiv2017

The conundrum of relaxation volumes in first-principles calculations of charge defects

The defect relaxation volumes obtained from density-functional theory (DFT) calculations of charged vacancies and interstitials are much larger than their neutral counterparts, seemingly unphysically large. In this work, we investigate the possible reasons for this and revisit the methods that address the calculation of charged defect structures in periodic DFT. We probe the dependence of the proposed energy corrections to charged defect formation energies on relaxation volumes and find that corrections such as the image charge correction and the alignment correction, which can lead to sizable changes in defect formation energies, have an almost negligible effect on the charged defect relaxation volume. We also investigate the volume for the net neutral defect reactions comprised of individual charged defects, and find that the aggregate formation volumes have reasonable magnitudes. This work highlights an important issue that, as for defect formation energies, the defect formation volumes depend on the choice of reservoir. We show that considering the change in volume of the electron reservoir in the formation reaction of the charged defects, analogous to how volumes of atoms are accounted for in defect formation volumes, can renormalize the formation volumes of charged defects such that they are comparable to neutral defects. This approach enables the description of the elastic properties of isolated charged defects within the overall neutral material, beyond the context of the overall defect reactions that produce the charged defect.

cond-mat.mtrl-sci↗

arXiv2014

Phonon Density of States and Anharmonicity of UO2

Phonon density of states (PDOS) measurements have been performed on polycrystalline UO2 at 295 and 1200 K using time-of-flight inelastic neutron scattering to investigate the impact of anharmonicity on the vibrational spectra and to benchmark ab initio PDOS simulations performed on this strongly correlated Mott-insulator. Time-of-flight PDOS measurements include anharmonic linewidth broadening inherently and the factor of ~ 7 enhancement of the oxygen spectrum relative to the uranium component by the neutron weighting increases sensitivity to the oxygen-dominated optical phonon modes. The first-principles simulations of quasi-harmonic PDOS spectra were neutron-weighted and anharmonicity was introduced in an approximate way by convolution with wavevector-weighted averages over our previously measured phonon linewidths for UO2 that are provided in numerical form. Comparisons between the PDOS measurements and the simulations show reasonable agreement overall, but they also reveal important areas of disagreement for both high and low temperatures. The discrepancies stem largely from an ~ 10 meV compression in the overall bandwidth (energy range) of the oxygen-dominated optical phonons in the simulations. A similar linewidth-convoluted comparison performed with the PDOS spectrum of Dolling et al. obtained by shell-model fitting to their historical phonon dispersion measurements shows excellent agreement with the time-of-flight PDOS measurements reported here. In contrast, we show by comparisons of spectra in linewidth-convoluted form that recent first-principles simulations for UO2 fail to account for the PDOS spectrum determined from the measurements of Dolling et al. These results demonstrate PDOS measurements to be stringent tests for ab initio simulations of phonon physics in UO2 and they indicate further the need for advances in theory to address lattice dynamics of UO2.

cond-mat.str-el↗