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Simon Svab

Publications and source records attributed to Simon Svab.

5 recordsLinked to original sources

A direct dispersive signature of Pauli spin blockade

Pauli Spin Blockade (PSB) is a key paradigm in semiconductor nanostructures and gives access to the spin physics. We report the direct observation of PSB with gate-dispersive reflectometry on double quantum dots with source-drain bias. The reservoir charge transitions are strongly modulated, turning on and off when entering and leaving the blockaded region, consistent with a simple model. Seen with holes in Ge and Si, the effects are enhanced with larger bias voltage and suppressed by magnetic field. This work lays the foundation for fast probing of spin physics and minimally invasive spin readout.

cond-mat.mes-hall

Compromise-Free Scaling of Qubit Speed and Coherence

Across leading qubit platforms, a common trade-off persists: increasing coherence comes at the cost of operational speed, reflecting the notion that protecting a qubit from its noisy surroundings also limits control over it. This speed-coherence dilemma limits qubit performance across various technologies. Here, we demonstrate a hole spin qubit in a Ge/Si core/shell nanowire that triples its Rabi frequency while simultaneously quadrupling its Hahn-echo coherence time, boosting the Q-factor by over an order of magnitude. This is enabled by the direct Rashba spin-orbit interaction, emerging from heavy-hole-light-hole mixing through strong confinement in two dimensions. Tuning a gate voltage causes this interaction to peak, providing maximum drive speed and a point where the qubit is optimally protected from charge noise, allowing speed and coherence to scale together. Our proof-of-concept shows that careful dot design can overcome a long-standing limitation, offering a new approach towards building high-performance, fault-tolerant qubits.

cond-mat.mes-hall

Fully autonomous tuning of a spin qubit

Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, the development of large-scale semiconductor quantum circuits is still limited by challenges in efficiently tuning and operating these circuits. Identifying optimal operating conditions for these qubits is complex, involving the exploration of vast parameter spaces. This presents a real 'needle in the haystack' problem, which, until now, has resisted complete automation due to device variability and fabrication imperfections. In this study, we present the first fully autonomous tuning of a semiconductor qubit, from a grounded device to Rabi oscillations, a clear indication of successful qubit operation. We demonstrate this automation, achieved without human intervention, in a Ge/Si core/shell nanowire device. Our approach integrates deep learning, Bayesian optimization, and computer vision techniques. We expect this automation algorithm to apply to a wide range of semiconductor qubit devices, allowing for statistical studies of qubit quality metrics. As a demonstration of the potential of full automation, we characterise how the Rabi frequency and g-factor depend on barrier gate voltages for one of the qubits found by the algorithm. Twenty years after the initial demonstrations of spin qubit operation, this significant advancement is poised to finally catalyze the operation of large, previously unexplored quantum circuits.

cond-mat.mes-hall

Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots

Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deteriorate and fail at temperatures below 10 K and in magnetic fields. Here, we investigate a varactor based on strontium titanate with hyperabrupt capacitance-voltage characteristic, that is, a capacitance tunability similar to the best gallium arsenide-based devices. The varactor design introduced here is compact, scalable and easy to wirebond with an accessible capacitance range from 45 pF to 3.2 pF. We tune a resonant inductor-capacitor circuit to perfect impedance matching and observe robust, temperature and field independent matching down to 11 mK and up to 2 T in-plane field. Finally, we perform gate-dispersive charge sensing on a germanium/silicon core/shell nanowire hole double quantum dot, paving the way towards gate-based single-shot spin readout. Our results bring small, magnetic field-resilient, highly tunable varactors to mK temperatures, expanding the toolbox of cryo-radio frequency applications.

cond-mat.mes-hall

Isotropic and Anisotropic g-factor Corrections in GaAs Quantum Dots

We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength which allows us to extract the g-factor. The measured g-factor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk g-factor. Because this implies a dependence of the spin splitting on the magnetic field direction, these findings are of significance for spin qubits in GaAs quantum dots.

cond-mat.mes-hall