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Simon Vigonski

Publications and source records attributed to Simon Vigonski.

8 recordsLinked to original sources

Growth mechanism for nanotips in high electric fields

In this work we show using atomistic simulations that the biased diffusion in high electric field gradients creates a mechanism whereby nanotips may start growing from small surface asperities. It has long been known that atoms on a metallic surface have biased diffusion if electric fields are applied and that microscopic tips may be sharpened using fields, but the exact mechanisms have not been well understood. Our Kinetic Monte Carlo simulation model uses a recently developed theory for how the migration barriers are affected by the presence of an electric field. All parameters of the model are physically motivated and no fitting parameters are used. The model has been validated by reproducing characteristic faceting patterns of tungsten surfaces that have in previous experiments been observed to only appear in the presence of strong electric fields. The growth effect is found to be enhanced by increasing fields and temperatures.

cond-mat.mtrl-sci

Data sets and trained neural networks for Cu migration barriers

Kinetic Monte Carlo (KMC) is an efficient method for studying diffusion. A limiting factor to the accuracy of KMC is the number of different migration events allowed in the simulation. Each event requires its own migration energy barrier. The calculation of these barriers may be unfeasibly expensive. In this article we present a data set of migration barriers on for nearest-neighbour jumps on the Cu surfaces, calculated with the nudged elastic band (NEB) method and the tethering force approach. We used the data to train artifcial neural networks (ANN) in order to predict the migration barriers for arbitrary nearest-neighbour Cu jumps. The trained ANNs are also included in the article. The data is hosted by the CSC IDA storage service.

physics.comp-ph

Application of artificial neural networks for rigid lattice kinetic Monte Carlo studies of Cu surface diffusion

Kinetic Monte Carlo (KMC) is a powerful method for simulation of diffusion processes in various systems. The accuracy of the method, however, relies on the extent of details used for the parameterization of the model. Migration barriers are often used to describe diffusion on atomic scale, but the full set of these barriers may become easily unmanageable in materials with increased chemical complexity or a large number of defects. This work is a feasibility study for applying a machine learning approach for Cu surface diffusion. We train an artificial neural network on a subset of the large set of $2^{26}$ barriers needed to correctly describe the surface diffusion in Cu. Our KMC simulations using the obtained barrier predictor show sufficient accuracy in modelling processes on the low-index surfaces and display the correct thermodynamical stability of these surfaces.

physics.comp-ph

Tungsten migration energy barriers for surface diffusion: a parameterization for KMC simulations

We have calculated the migration barriers for surface diffusion on Tungsten. Our results form a self-sufficient parameterization for Kinetic Monte Carlo simulations of arbitrarily rough atomic tungsten surfaces, as well as nanostructures such as nanotips and nanoclusters. The parameterization includes first- and second-nearest neighbour atom jump processes, as well as a third-nearest neighbour exchange process. The migration energy barriers of all processes are calculated with the Nudged Elastic Band method. The same attempt frequency for all processes is found sufficient and the value is fitted to Molecular Dynamics simulations. The model is validated by correctly simulating with Kinetic Monte Carlo the energetically favourable W nanocluster shapes, in good agreement with Molecular Dynamics simulations.

cond-mat.mtrl-sci

Molecular dynamics simulations of surface modification formations on polycrystalline Cu under high electric fields

Vacuum breakdowns in particle accelerators and other devices operating at high electric fields is a common problem in the operation of these devices. It has been proposed that the onset of vacuum breakdowns is associated with appearance of surface protrusions while the device is in operation under high electric field. Moreover, the breakdown tolerance of an electrode material was correlated with the type of lattice structure of the material. In the current paper we conduct molecular dynamics simulations of nanocrystalline copper surfaces and show the possibility of protrusion growth under the stress exerted on the surface by an applied electrostatic field. We show the importance of grain boundaries on the protrusion formation and establish a linear relationship between the necessary electrostatic stress for protrusion formation and the temperature of the system. We show that time for protrusion formation increases with the lowering electrostatic field and give the Arrhenius extrapolation to the case of lower fields. General discussion of the protrusion formation mechanisms in the case of polycrystalline copper surfaces is presented.

cond-mat.mtrl-sci

Au nanowire junction breakup through surface atom diffusion

Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper we perform a series of annealing experiments of gold and silver nanowires and nanowire junctions at fixed temperatures 473, 673, 873 and 973 K (200, 400, 600 and 700 °C) during a time period of 10 minutes. We show that nanowires are especially prone to fragmentation around junctions and crossing points even at comparatively low temperatures. The fragmentation process is highly temperature dependent and the junction region breaks up at a lower temperature than a single nanowire. We develop a gold parametrization for Kinetic Monte Carlo simulations and demonstrate the surface diffusion origin of the nanowire junction fragmentation. We show that nanowire fragmentation starts at the junctions with high reliability and propose that aligning nanowires in a regular grid could be used as a technique for fabricating arrays of nanodots.

cond-mat.mtrl-sci

Migration barriers for surface diffusion on a rigid lattice: challenges and solutions

Atomistic rigid lattice Kinetic Monte Carlo is an efficient method for simulating nano-objects and surfaces at timescales much longer than those accessible by molecular dynamics. A laborious part of constructing any Kinetic Monte Carlo model is, however, to calculate all migration barriers that are needed to give the probabilities for any atom jump event to occur in the simulations. One of the common methods of barrier calculations is Nudged Elastic Band. The number of barriers needed to fully describe simulated systems is typically between hundreds of thousands and millions. Calculations of such a large number of barriers of various processes is far from trivial. In this paper, we will discuss the challenges arising during barriers calculations on a surface and present a systematic and reliable tethering force approach to construct a rigid lattice barrier parameterization of face-centred and body-centred cubic metal lattices. We have produced several different barrier sets for Cu and for Fe that can be used for KMC simulations of processes on arbitrarily rough surfaces. The sets are published as Data in Brief articles and available for the use.

cond-mat.mtrl-sci

Simulations of surface stress effects in nanoscale single crystals

Onset of vacuum arcing near a metal surface is often associated with nanoscale asperities, which may dynamically appear due to different processes ongoing in the surface and subsurface layers in the presence of high electric fields. Thermally activated processes, as well as plastic deformation caused by tensile stress due to an applied electric field, are usually not accessible by atomistic simulations because of long time needed for these processes to occur. On the other hand, finite element methods, able to describe the process of plastic deformations in materials at realistic stresses, do not include surface properties. The latter are particularly important for the problems where the surface plays crucial role in the studied process, as for instance, in case of plastic deformations at a nanovoid. In the current study by means of molecular dynamics and finite element simulations we analyse the stress distribution in single crystal copper containing a nanovoid buried deep under the surface. We have developed a methodology to incorporate the surface effects into the solid mechanics framework by utilizing elastic properties of crystals, pre-calculated using molecular dynamic simulations. The method leads to computationally efficient stress calculations and can be easily implemented in commercially available finite element software, making it an attractive analysis tool.

cond-mat.mtrl-sci