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Simon Zihlmann

Publications and source records attributed to Simon Zihlmann.

28 records · Page 2Linked to original sources

Non-equilibrium properties of graphene probed by superconducting tunnel spectroscopy

We report on non-equilibrium properties of graphene probed by superconducting tunnel spectroscopy. A hexagonal boron nitride (hBN) tunnel barrier in combination with a superconducting Pb contact is used to extract the local energy distribution function of the quasiparticles in graphene samples in different transport regimes. In the cases where the energy distribution function resembles a Fermi-Dirac distribution, the local electron temperature can directly be accessed. This allows us to study the cooling mechanisms of hot electrons in graphene. In the case of long samples (device length $L$ much larger than the electron-phonon scattering length $l_{e-ph}$), cooling through acoustic phonons is dominant. We find a cross-over from the dirty limit with a power law $~T^3$ at low temperature to the clean limit at higher temperatures with a power law $~T^4$ and a deformation potential of 13.3 eV. For shorter samples, where $L$ is smaller than $l_{e-ph}$ but larger than the electron-electron scattering length $l_{e-e}$, the well-known cooling through electron out-diffusion is found. Interestingly, we find strong indications of an enhanced Lorenz number in graphene. We also find evidence of a non-Fermi-Dirac distribution function, which is a result of non-interacting quasiparticles in very short samples.

cond-mat.mes-hall↗

GHz nanomechanical resonator in an ultraclean suspended graphene p-n junction

We demonstrate high-frequency mechanical resonators in ballistic graphene p-n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior after current annealing. We determine the graphene mass density and built-in tension for different current annealing steps by comparing the measured mechanical resonant response to a simplified membrane model. We consistently find that after the last annealing step the mass density compares well with the expected density of pure graphene. In a graphene membrane with high built-in tension, but still of macroscopic size with dimensions 3 $\times$ 1 $μm^{2}$, a record resonance frequency of 1.17 GHz is observed after the final current annealing step. We further compare the resonance response measured in the unipolar with the one in the bipolar regime. Remarkably, the resonant signals are strongly enhanced in the bipolar regime. This enhancement is caused in part by the Fabry-Perot resonances that appear in the bipolar regime and possibly also by the photothermoelectric effect that can be very pronounced in graphene p-n junctions under microwave irradiation.

cond-mat.mes-hall↗

New generation of moiré superlattices in doubly aligned hBN/graphene/hBN heterostructures

The specific rotational alignment of two-dimensional lattices results in a moiré superlattice with a larger period than the original lattices and allows one to engineer the electronic band structure of such materials. So far, transport signatures of such superlattices have been reported for graphene/hBN and graphene/graphene systems. Here we report moiré superlattices in fully hBN encapsulated graphene with both the top and the bottom hBN aligned to the graphene. In the graphene, two different moiré superlattices form with the top and the bottom hBN, respectively. The overlay of the two superlattices can result in a third superlattice with a period larger than the maximum period (14 nm) in the graphene/hBN system, which we explain in a simple model. This new type of band structure engineering allows one to artificially create an even wider spectrum of electronic properties in two-dimensional materials.

cond-mat.mes-hall↗

Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/Gr/hBN heterostructures

Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found at large carrier densities, the type of spin-orbit coupling and its relaxation mechanism remained unknown. We show for the first time an increased spin-orbit coupling close to the charge neutrality point in graphene, where topological states are expected to appear. Single layer graphene encapsulated between the transition metal dichalcogenide WSe$_2$ and hBN is found to exhibit exceptional quality with mobilities as high as 100000 cm^2/V/s. At the same time clear weak anti-localization indicates strong spin-orbit coupling and a large spin relaxation anisotropy due to the presence of a dominating symmetric spin-orbit coupling is found. Doping dependent measurements show that the spin relaxation of the in-plane spins is largely dominated by a valley-Zeeman spin-orbit coupling and that the intrinsic spin-orbit coupling plays a minor role in spin relaxation. The strong spin-valley coupling opens new possibilities in exploring spin and valley degree of freedom in graphene with the realization of new concepts in spin manipulation.

cond-mat.mes-hall↗

Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO$_2$ substrate based graphene devices, and obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behaviour of ferromagnet/two-layer-CVD-hBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVD-hBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spin injection polarization of the high-resistance contacts can be modulated by DC bias from -0.3 V to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features mark a distinctive spin injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.

cond-mat.mes-hall↗

Anisotropic Etching of Graphite and Graphene in a Remote Hydrogen Plasma

We investigate the etching of a pure hydrogen plasma on graphite samples and graphene flakes on SiO$_2$ and hexagonal Boron-Nitride (hBN) substrates. The pressure and distance dependence of the graphite exposure experiments reveals the existence of two distinct plasma regimes: the direct and the remote plasma regime. Graphite surfaces exposed directly to the hydrogen plasma exhibit numerous etch pits of various size and depth, indicating continuous defect creation throughout the etching process. In contrast, anisotropic etching forming regular and symmetric hexagons starting only from preexisting defects and edges is seen in the remote plasma regime, where the sample is located downstream, outside of the glowing plasma. This regime is possible in a narrow window of parameters where essentially all ions have already recombined, yet a flux of H-radicals performing anisotropic etching is still present. At the required process pressures, the radicals can recombine only on surfaces, not in the gas itself. Thus, the tube material needs to exhibit a sufficiently low H radical recombination coefficient, such a found for quartz or pyrex. In the remote regime, we investigate the etching of single layer and bilayer graphene on SiO$_2$ and hBN substrates. We find isotropic etching for single layer graphene on SiO$_2$, whereas we observe highly anisotropic etching for graphene on a hBN substrate. For bilayer graphene, anisotropic etching is observed on both substrates. Finally, we demonstrate the use of artificial defects to create well defined graphene nanostructures with clean crystallographic edges.

cond-mat.mes-hall↗

Microwave Photodetection in an Ultraclean Suspended Bilayer Graphene pn Junction

We explore the potential of bilayer graphene as a cryogenic microwave photodetector by studying the microwave absorption in fully suspended clean bilayer graphene pn junctions in the frequency range of $1-5$ GHz at a temperature of 8 K. We observe a distinct photocurrent signal if the device is gated into the pn regime, while there is almost no signal for unipolar doping in either the nn or pp regimes. Most surprisingly, the photocurrent strongly peaks when one side of the junction is gated to the Dirac point (charge-neutrality point CNP), while the other remains in a highly doped state. This is different to previous results where optical radiation was used. We propose a new mechanism based on the phototermal effect explaining the large signal. It requires contact doping and a distinctly different transport mechanism on both sides: one side of graphene is ballistic and the other diffusive. By engineering partially diffusive and partially ballistic devices, the photocurrent can drastically be enhanced.

cond-mat.mes-hall↗

Role of hexagonal boron nitride in protecting ferromagnetic nanostructures from oxidation

Ferromagnetic contacts are widely used to inject spin polarized currents into non-magnetic materials such as semiconductors or 2-dimensional materials like graphene. In these systems, oxidation of the ferromagnetic materials poses an intrinsic limitation on device performance. Here we investigate the role of ex-situ transferred chemical vapour deposited hexagonal boron nitride (hBN) as an oxidation barrier for nanostructured cobalt and permalloy electrodes. The chemical state of the ferromagnets was investigated using X-ray photoemission electron microscopy owing to its high sensitivity and lateral resolution. We have compared the oxide thickness formed on ferromagnetic nanostructures covered by hBN to uncovered reference structures. Our results show that hBN reduces the oxidation rate of ferromagnetic nanostructures suggesting that it could be used as an ultra-thin protection layer in future spintronic devices.

cond-mat.mes-hall↗

Guiding of Electrons in a Few Mode Ballistic Graphene Channel

In graphene, the extremely fast charge carriers can be controlled by electron-optical elements, such as waveguides, in which the transmissivity is tuned by the wavelength. In this work, charge carriers are guided in a suspended ballistic few-mode graphene channel, defined by electrostatic gating. By depleting the channel, a reduction of mode number and steps in the conductance are observed, until the channel is completely emptied. The measurements are supported by tight-binding transport calculations including the full electrostatics of the sample.

cond-mat.mes-hall↗

Seeded growth of monodisperse and spherical silver nanoparticles

Aiming at spherical and monodisperse silver nanoparticles with diameters up to 100 nm, the potential of heterogeneous nucleation of silver particles was explored. Gold seed particles, mainly produced with a spark discharge generator, were carried by nitrogen through a three-zone tube furnace. Silver was evaporated at 1210 °C in the first zone of the furnace and particle growth and shaping took place in the subsequent zones, heated to 730 °C and 390 °C respectively. The generated aerosol was monitored by a scanning mobility particle sizer (SMPS), while parameters, such as furnace temperature, seed particle size and concentration and nitrogen carrier gas flow, were investigated. Off-line atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to characterize the morphology of the silver nanoparticles in addition to the SMPS scans. Spherical silver nanoparticles with a mobility diameter of more than 115 nm and a geometric standard deviation of typically 1.09 or lower at concentrations as large as 5e5cm^{-3} could be produced. The mobility diameter of the monodisperse aerosol could be varied in the range of 50 nm to 115 nm by changing the furnace temperature or the gold seed particle size. Elemental analysis revealed that the gold from the seed particles formed a homogeneous alloy with the silver (< 3.5 atomic percent of gold). The growth mechanism could not be identified unambiguously since the obtained silver particles could both originate from heterogeneous nucleation of silver vapour on the seed particles or from coagulation and coalescence of the seed particles with smaller, homogeneously nucleated silver particles. Moreover, the narrow size distribution opens the opportunity to obtain an exclusively singly charged, monodisperse calibration aerosol at sufficient concentrations after and additional mobility selection process.

cond-mat.mtrl-sci↗