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Simrandeep Kaur

Publications and source records attributed to Simrandeep Kaur.

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Screening-controlled dynamical criticality in the quantum Hall regime

At continuous electronic phase transitions, Coulomb interactions can modify the relation between length, energy, and temperature, but experimentally disentangling their effects on spatial versus dynamical criticality has remained difficult, since finite-temperature scaling alone measures only the combined exponent $\kappa = 1/(z\gamma)$. Here, we introduce two advances that resolve this limitation. First, by combining temperature scaling with independent current scaling, we separately extract the dynamical exponent $z$ and the localization-length exponent $\gamma$ at the quantum Hall plateau transition -- rather than inferring one from an assumed value of the other. Second, using dual-graphite-gated graphene devices in which the effective Coulomb interaction range is tuned geometrically by the ratio of the magnetic length $l_B$ to the graphite-gate distance $d$, we track this separation across both screened and unscreened interaction regimes within the same device platform. Temperature scaling gives $\kappa \simeq 0.21$ in the screened regime and $\kappa \simeq 0.41$ in the unscreened regime; combining this with current scaling reveals that screening changes $z$ from $\simeq 1$ in the unscreened regime to $\simeq 2$ in the screened regime. In contrast, $\gamma$ remains close to $2.4$ throughout. Our results establish that gate-controlled screening selectively modifies the interaction-dependent dynamical sector of the quantum Hall transition, leaving the localization-length exponent $\gamma$ unchanged within experimental uncertainty. More broadly, this work establishes geometric screening as a versatile tool for controlling interactions and disentangling interaction and disorder effects in correlated two-dimensional systems, including fractional quantum Hall states, moir\'e materials, and other strongly localized electronic phases.

cond-mat.mes-hall

Layer-Polarization-Driven Metal-Insulator Transition in multi-band Graphene Moire' Superlattices

Graphene/hBN moir\'e superlattices provide a highly tunable platform for exploring emergent quantum phases in low-dimensional systems. Here, we investigate the moir\'e superlattice formed between hBN and ABA-stacked trilayer graphene (TLG), an inherently multi-band system. We demonstrate that the moir\'e potential is not merely a perturbation but a tool to hybridize the distinct massless and massive electronic sectors of TLG. By applying a perpendicular displacement field to tune layer polarization, we drive a fundamental reconstruction of the electronic band structure. Specifically, increasing the displacement field evolves the system from a multi-band regime to an effectively single-band regime at low energies, accompanied by a metal--insulator transition at the hole-doped secondary Dirac point. This transition originates from a redistribution of carriers across graphene layers that selectively enhances their coupling to the extrinsic moir\'e potential. Quantum capacitance measurements provide direct evidence for the suppression of the density of states at the hole-side secondary Dirac point, consistent with gap opening and the emergence of a displacement-field-tuned band gap. Theoretical calculations reproduce these observations and identify layer-selective coupling to the moir\'e potential as the underlying mechanism. These results demonstrate electrical control of an emergent insulating phase in a low-dimensional moir\'e system, and highlight that layer polarization and layer-selective coupling in multi-band moir\'e heterostructures provide a powerful route for engineering topological and correlated phases through band structure reconstruction and electron interactions.

cond-mat.mes-hall

Symmetry broken states at high displacement fields in ABA trilayer graphene

In this Letter, we present a comprehensive study of magnetotransport in high-mobility trilayer graphene (TLG) devices under a transverse displacement field, focusing on symmetry-broken Landau levels (LLs) from monolayer-like and bilayer-like bands. A striking displacement-field-induced enhancement of the Land\'e g-factor is observed in the zeroth Landau level of the monolayer-like band, highlighting the role of strong electron-electron interactions. Additionally, we find a rich landscape of LL crossings in the Dirac gully region, accompanied by phase transitions between spin-, gully-, and valley-polarized LLs. These experimental observations are successfully modeled using calculations based on optimized tight-binding parameters. Furthermore, our results reveal significant particle-hole asymmetry in the sequence of LLs in the Dirac gullies, attributed to differing g-factor values for electrons and holes. This asymmetry underscores the limitations of non-interacting models in capturing the complexities of strongly correlated multiband systems. This work provides new insights into the interplay of symmetry-breaking mechanisms and strong correlations in Bernal-stacked trilayer graphene, advancing our understanding of quantum transport phenomena in multiband systems.

cond-mat.mes-hall

Tunable Band Inversion in Trilayer Graphene

Displacement field control of elecronic bands in low-dimensional systems is a promising route toward engineering emergent quantum phases. Here, we report displacement-field-induced band inversion and modulation of the Berry phase of low-energy quasi particles in high-mobility Bernal-stacked trilayer graphene (TLG). Using quantum oscillations, we track the evolution of the Fermi surface and topological properties of Dirac-like gully bands that emerge under a finite interlayer potential. We observe a striking sequence of transitions: at low displacement field $D$, the gullies are characterized by a Berry phase of $2\pi$ and large effective mass, indicating massive fermions. As $D$ increases, the Berry phase abruptly shifts to $\pi$ and the effective mass reaches a minimum, signaling the onset of massless Dirac behavior. At higher $D$, the Berry phase returns to $2\pi$, and the effective mass increases again, consistent with a band inversion. These findings demonstrate a rare, reversible topological phase transition - massive to massless to massive - driven entirely by an external displacement field. Despite robust theoretical predictions [\textit{Phys. Rev. B} \textbf{87}, 085424 (2013), \textit{Phys. Rev. B} \textbf{87}, 115422 (2013), and \textit{Phys. Rev. B} \textbf{101}, 245411 (2020)], this evolution of the band topology had escaped experimental detection. Our results establish TLG as a tunable platform for nanoscale control of band topology. They establish a means to tune between massive and Dirac-like dispersions dynamically providing a foundation for exploring field-switchable topological phenomena in layered 2D systems.

cond-mat.mes-hall

Even-denominator fractional quantum Hall states in the zeroth Landau level of ABA trilayer graphene

Even-denominator fractional quantum Hall states (FQHSs) at half filling are of particular interest because they can host non-Abelian quasiparticles. Here we report the emergence of such states in the zeroth Landau level ($N=0$) of ABA trilayer graphene (TLG), challenging the conventional expectation that they are confined to the first excited Landau level. We observe robust incompressible states at $\nu=7/2$, $9/2$, and $5/2$ with their associated Levin--Halperin daughter states: $\nu=59/17$ and $46/13$ near $7/2$; $\nu=58/13$ and $77/17$ near $9/2$; and $\nu=43/17$ near $5/2$. These states appear exclusively within a finite displacement-field window coincident with crossings between symmetry-broken $N=0$ Landau levels carrying distinct isospin indices. The quantitative correspondence between the calculated crossing loci and the experimentally determined stability regions identifies Landau-level mixing as the microscopic origin. We attribute the stabilization of these even-denominator states to inversion-symmetry breaking in TLG, which enhances valley-resolved Landau-level hybridization and renormalizes short-range Coulomb interactions. Our results expand the landscape of even-denominator FQHSs to multilayer graphene and establish TLG as a tunable platform for realizing non-Abelian anyons.

cond-mat.mes-hall

Controlling particle-hole symmetry of fractional quantum hall states in trilayer graphene

We present a detailed experimental study of the particle-hole symmetry (PHS) of the fractional quantum Hall (FQH) states about half filling in a multiband system. Specifically, we focus on the lowest Landau level of the monolayer-like band of Bernal stacked trilayer graphene (TLG). In pristine TLG, the excitation energy gaps, Land\'e g-factor, effective mass, and disorder broadening of the odd-denominator FQH states are identical to their hole-conjugate counterpart. This precise PH symmetry stems from the lattice mirror symmetry that precludes Landau-level mixing. Introducing a non-zero displacement field \(D\) disrupts this mirror symmetry, facilitating the hybridization between the monolayer-like and bilayer-like Landau levels. This inter-band coupling enhances the Landau level mixing factor $\eta$ and activates three-body interactions -- both of which explicitly break the PHS of FQHs. As a result, conventional FQHs are completely destabilized, offering a route to engineer symmetry breaking of FQHs in a controlled way. We establish that the PHS breaking in TLG is of extrinsic origin and is fundamentally distinct from the intrinsic, interaction-driven symmetry breaking observed in the lowest Landau levels of single-layer and bilayer graphene.

cond-mat.mes-hall

Universality of Quantum Phase Transitions in the Integer and Fractional Quantum Hall Regimes

Fractional quantum Hall (FQH) phases emerge due to strong electronic interactions and are characterized by anyonic quasiparticles, each distinguished by unique topological parameters, fractional charge, and statistics. In contrast, the integer quantum Hall (IQH) effects can be understood from the band topology of non-interacting electrons. We report a surprising super-universality of the critical behavior across all FQH and IQH transitions. Contrary to the anticipated state-dependent critical exponents, our findings reveal the same critical scaling exponent $\kappa = 0.41 \pm 0.02$ and localization length exponent $\gamma = 2.4 \pm 0.2$ for fractional and integer quantum Hall transitions. From these, we extract the value of the dynamical exponent $z\approx 1$. We have achieved this in ultra-high mobility trilayer graphene devices with a metallic screening layer close to the conduction channels. The observation of these global critical exponents across various quantum Hall phase transitions was masked in previous studies by significant sample-to-sample variation in the measured values of $\kappa$ in conventional semiconductor heterostructures, where long-range correlated disorder dominates. We show that the robust scaling exponents are valid in the limit of short-range disorder correlations.

cond-mat.mes-hall

Novel Emergent Phases in a Two-Dimensional Superconductor

In this letter, we report our observation of an extraordinarily rich phase diagram of a LaScO$_3$/SrTiO$_3$ heterostructure. Close to the superconducting transition temperature, the system hosts a superconducting critical point of the Infinite-randomness type characterized by an effective dynamical exponent $\nu z$ that diverges logarithmically. At lower temperatures, we find the emergence of a magnetic field-tuned metallic phase that co-exists with a quantum Griffiths phase (QGP). Our study reveals a previously unobserved phenomenon in 2D superconductors -- an unanticipated suppression of the QGP below a crossover temperature in this system. This concealment is accompanied by the destruction of the superconducting quantum critical point signaled by a power-law divergence (in temperature) of the effective dynamical exponent. These observations are entirely at odds with the predictions of the infinite-randomness scenario and challenge the very concept of a vanishing energy scale associated with a quantum critical point. We develop and discuss possible scenarios like smearing of the phase transition that could plausibly explain our observations. Our findings challenge the notion that QGP is the ultimate ground state in two-dimensional superconductors.

cond-mat.supr-con

Transition from three- to two-dimensional Ising superconductivity in few-layer NbSe2 by proximity effect from van der Waals heterostacking

We report the experimental observation of Ising superconductivity in 3-dimensional NbSe2 stacked with single-layer MoS2. The angular dependence of the upper critical magnetic field and the temperature dependence of the upper parallel critical field confirm the appearance of two-dimensional Ising superconductivity in the 3-dimensional NbSe2 with single-layer MoS2 overlay. We show that the superconducting phase has strong Ising spin-orbit correlations which make the holes spin non-degenerate. Our observation of Ising superconductivity in heterostructures of few-layer NbSe2 of thickness ~ 15 nm with single-layer MoS2 raises the interesting prospect of observing topological chiral superconductors with nontrivial Chern numbers in a momentum-space spin-split fermionic system.

cond-mat.supr-con