arXiv subjects

Simranjeet Singh

Publications and source records attributed to Simranjeet Singh.

At least 19 recordsLinked to original sources

arXiv2026

Element-Specific Visualization of Layer-Parity and Twist-Dependent Magnetism in CrSBr

Van der Waals (vdW) based antiferromagnets (AFMs) are an ideal platform for probing and understanding thickness- and twist-angle-dependent emergent spin phenomena. However, element-specific nanoscale characterization of the spin structure in atomically thin vdW-based AFMs systems and layer-parity effects remain elusive, making them crucial for both fundamental insight into low-dimensional magnetism and the rational design of spintronic devices based on these materials. Here, we utilize X-ray magnetic circular and linear dichroisms paired with photoemission electron microscopy to resolve the magnetic order in atomically thin CrSBr. Our comprehensive measurements reveal CrSBr magnetic structure at the nanoscale and its dependence on the layer number, surface encapsulation, temperature, and applied field. Moreover, in the orthogonally twisted bilayer configuration, obtained by twisting two CrSBr ferromagnetic monolayers by 90$^\circ$, the magnetic easy axis fundamentally differs from the individual monolayers, unlocking a new pathway for moir\'e magnetism.

cond-mat.mes-hall↗

arXiv2026

Enabling Electrical Readout of N\'eel vector reversal in a van der Waals Antiferromagnet

Owing to its robustness against external perturbations and intrinsically ultrafast dynamics, the N\'eel vector in antiferromagnets (AFMs) can enable the development of next-generation spintronic and magnonic devices for memory and computing applications. To realize AFM-based magnetic memory devices, one of the key requirements is to demonstrate electrical readout of 180-degree reversal of N\'eel vector in thin film AFMs, which remains critically missing. In this work, we report experimental demonstration of a novel transport methodology to detect N\'eel vector reversal in atomically thin films of a van der Waals (vdW) based A-type AFM. For this, we utilize spin-dependent electronic band properties of CrSBr by coupling it to a spin-polarized layer, separated by a tunnel barrier. In this configuration, the spin-dependent tunnelling magnetoresistance (MR) becomes sensitive to the relative orientation between the magnetization of the reference electrode and the interfacial sublattice magnetization of the AFM layer, in turn enabling electrical detection of the N\'eel vector orientation. Importantly, the observed MR can also reveal 180-degree reversal of N\'eel vector in even-layers of CrSBr, wherein adjacent sublattice magnetic layers are exactly compensated and the net magnetization vanishes and thus establishes a broadly applicable strategy for electrical detection of N\'eel vector in vdW-based AFMs.

cond-mat.mes-hall↗

arXiv2026

Ultrafast Light-Induced Magnetoelectric Effect in van der Waals Magnetic Semiconductor Heterostructures

Atomic-scale heterostructures of van der Waals (vdW) magnets and semiconductors provide a unique environment for exploring magnetic dynamics. In contrast to typical photothermal excitation of precessional magnetization dynamics by a pump laser pulse, we find that ultrafast optical excitation of a WS$_2$/CrGeTe$_3$ (CGT) bilayer produces an opposite sign of magnetic torque compared to an isolated CGT film. Experimental observations by time-resolved magneto-optic Kerr effect (TR-MOKE) and theoretical analysis by density functional theory (DFT) and Landau-Lifshitz-Gilbert (LLG) simulations support a mechanism in which charge transfer of photoexcited carriers across the interface alters the perpendicular magnetic anisotropy, which in turn generates a torque on the magnetic layer to trigger precessional magnetization dynamics. These results provide new avenues for ultrafast manipulation of magnetization in vdW heterostructures with type-II band alignments. Lastly, we show that optically-generated spin currents from WS$_2$ into CGT can also trigger precessional dynamics via angular momentum transfer.

cond-mat.mes-hall↗

arXiv2026

Visualization of Tunable Electronic Structure of Monolayer TaIrTe$_4$

Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric screening tunable topological phases such as quantum spin Hall insulator (QSHI), trivial insulator, higher-order topological insulator, and metallic phase, in the ground state of monolayer TaIrTe$_4$. Moreover, charge dosing has been demonstrated to convert the QSHI into a dual QSHI state. Although the band structure of monolayer TaIrTe$_4$ is central to interpreting its topological phases in transport experiments, direct experimental access to its intrinsic electronic structure has so far remained elusive. Here we report direct measurements of the monolayer TaIrTe$_4$ band structure using spatially resolved micro-angle-resolved photoemission spectroscopy (microARPES) with micrometre-scale resolution. The observed dispersions show quantitative agreement with density functional theory calculations using the Heyd-Scuseria-Ernzerhof hybrid functional, establishing the insulating ground state and revealing no evidence for strong electronic correlations. We further uncover a pronounced electron-hole asymmetry in the doping response. Whereas hole doping is readily induced by electrostatic gating, attempts to introduce electrons via gating or alkali metal deposition do not yield a rigid upward shift of the Fermi level. Fractional charge calculations demonstrate that added electrons instead drive band renormalization and shrink the band gap. Taken together, our experimental and theoretical results identify the microscopic mechanism by which induced charges reshape the band topology of monolayer TaIrTe$_4$, showing that doping can fundamentally alter the electronic structure beyond the rigid band behaviour that is typically assumed.

cond-mat.str-el↗

arXiv2025

Roadmap: 2D Materials for Quantum Technologies

Two-dimensional (2D) materials have emerged as a versatile and powerful platform for quantum technologies, offering atomic-scale control, strong quantum confinement, and seamless integration into heterogeneous device architectures. Their reduced dimensionality enables unique quantum phenomena, including optically addressable spin defects, tunable single-photon emitters, low-dimensional magnetism, gate-controlled superconductivity, and correlated states in Moir\'e superlattices. This Roadmap provides a comprehensive overview of recent progress and future directions in exploiting 2D materials for quantum sensing, computation, communication, and simulation. We survey advances spanning spin defects and quantum sensing, quantum emitters and nonlinear photonics, computational theory and data-driven discovery of quantum defects, spintronic and magnonic devices, cavity-engineered quantum materials, superconducting and hybrid quantum circuits, quantum dots, Moir\'e quantum simulators, and quantum communication platforms. Across these themes, we identify common challenges in defect control, coherence preservation, interfacial engineering, and scalable integration, alongside emerging opportunities driven by machine$-$learning$-$assisted design and integrated experiment$-$theory feedback loops. By connecting microscopic quantum states to mesoscopic excitations and macroscopic device architectures, this Roadmap outlines a materials-centric framework for integrating coherent quantum functionalities and positions 2D materials as foundational building blocks for next-generation quantum technologies.

quant-ph↗

arXiv2025

Direct visualization of gate-tunable flat bands in twisted double bilayer graphene

The symmetry-broken correlated states in twisted double bilayer graphene (TDBG) can be tuned via several external knobs, including twist angle, displacement field, and carrier density. However, a direct, momentum-resolved characterization of how these parameters reshape the flat-band structure remains limited. In this study, we employ micro focused angle-resolved photoemission spectroscopy to investigate the flat-band dispersion of TDBG at a twist angle of 1.6, systematically varying the displacement field and carrier density via electrostatic gating. We directly observe multiple flat moir'e minibands near charge neutrality, including a flat remote valence band residing below the low-energy flat-band manifold. Furthermore, the dominant Coulomb repulsive energy over the flat- band bandwidth suggests favorable conditions for the emergence of interaction-driven correlated phenomena in TDBG. These findings establish that the formation and evolution of flat bands in TDBG arises from the interplay between the electron filling and the displacement field.

cond-mat.mes-hall↗

arXiv2025

Magnetization Dependent In-plane Anomalous Hall Effect in a Low-dimensional System

Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetries, which demands that the magnetization, applied electric field, and induced Hall current are mutually orthogonal to each other. Here, we report experimental realization of an unconventional form of AHE in a low-dimensional heterostructure, wherein the Hall response is not only proportional to the out-of-plane magnetization component but also to the in-plane magnetization component. By interfacing a low-symmetry topological semimetal (TaIrTe4) with the ferromagnetic insulator (Cr2Ge2Te6), we create a low-dimensional magnetic system, where only one mirror symmetry is preserved. We show that as long as the magnetization has a finite component in the mirror plane, this last mirror symmetry is broken, allowing the emergence of an AHE signal proportional to in-plane magnetization. Our experiments, conducted on multiple devices, reveal a gate-voltage-dependent AHE response, suggesting that the underlying mechanisms responsible for the Hall effect in our system can be tuned via electrostatic gating. A minimal microscopic model constrained by the symmetry of the heterostructure shows that both interfacial spin-orbit coupling and time-reversal symmetry breaking via the exchange interaction from magnetization are responsible for the emergence of the in-plane AHE. Our work highlights the importance of system symmetries and exchange interaction in low-dimensional heterostructures for designing novel and tunable Hall effects in layered quantum systems.

cond-mat.mes-hall↗

arXiv2024

Vision-based indoor localization of nano drones in controlled environment with its applications

Navigating unmanned aerial vehicles in environments where GPS signals are unavailable poses a compelling and intricate challenge. This challenge is further heightened when dealing with Nano Aerial Vehicles (NAVs) due to their compact size, payload restrictions, and computational capabilities. This paper proposes an approach for localization using off-board computing, an off-board monocular camera, and modified open-source algorithms. The proposed method uses three parallel proportional-integral-derivative controllers on the off-board computer to provide velocity corrections via wireless communication, stabilizing the NAV in a custom-controlled environment. Featuring a 3.1cm localization error and a modest setup cost of 50 USD, this approach proves optimal for environments where cost considerations are paramount. It is especially well-suited for applications like teaching drone control in academic institutions, where the specified error margin is deemed acceptable. Various applications are designed to validate the proposed technique, such as landing the NAV on a moving ground vehicle, path planning in a 3D space, and localizing multi-NAVs. The created package is openly available at https://github.com/simmubhangu/eyantra_drone to foster research in this field.

cs.RO↗

arXiv2024

Quantum Sensing of Broadband Spin Dynamics and Magnon Transport in Antiferromagnets

Optical detection of magnetic resonance using quantum spin sensors (QSS) provides a spatially local and sensitive technique to probe spin dynamics in magnets. However, its utility as a probe of antiferromagnetic resonance (AFMR) remains an open question. We report the first experimental demonstration of optically detected AFMR in layered van der Waals antiferromagnets (AF) up to frequencies of 24 GHz. We leverage QSS spin relaxation due to low-frequency magnetic field fluctuations arising from collective dynamics of magnons excited by the uniform AFMR mode. First, through AFMR spectroscopy we characterize the intrinsic exchange fields and magnetic anisotropies of the AF. Second, using the localized sensitivity of the QSS we demonstrate magnon transport over tens of micrometers. Finally, we find that optical detection efficiency increases with increasing frequency. This showcases the dual capabilities of QSS as detectors of high frequency magnetization dynamics and magnon transport, paving the way for understanding and controlling the magnetism of antiferromagnets.

cond-mat.mes-hall↗

arXiv2024

Resistive Memory for Computing and Security: Algorithms, Architectures, and Platforms

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device variations, can be leveraged to design novel techniques and algorithms. This thesis proposes a technique for utilizing RRAM devices in three major directions: i) digital logic implementation, ii) multi-valued computing, and iii) hardware security primitive design. We proposed new algorithms and architectures and conducted \textit{experimental studies} on each implementation. Moreover, we developed the electronic design automation framework and hardware platforms to facilitate these experiments.

cs.ET↗

arXiv2024

In-Memory Mirroring: Cloning Without Reading

In-memory computing (IMC) has gained significant attention recently as it attempts to reduce the impact of memory bottlenecks. Numerous schemes for digital IMC are presented in the literature, focusing on logic operations. Often, an application's description has data dependencies that must be resolved. Contemporary IMC architectures perform read followed by write operations for this purpose, which results in performance and energy penalties. To solve this fundamental problem, this paper presents in-memory mirroring (IMM). IMM eliminates the need for read and write-back steps, thus avoiding energy and performance penalties. Instead, we perform data movement within memory, involving row-wise and column-wise data transfers. Additionally, the IMM scheme enables parallel cloning of entire row (word) with a complexity of $\mathcal{O}(1)$. Moreover, our analysis of the energy consumption of the proposed technique using resistive random-access memory crossbar and experimentally validated JART VCM v1b model. The IMM increases energy efficiency and shows 2$\times$ performance improvement compared to conventional data movement methods.

cs.ET↗

arXiv2024

Unconventional Unidirectional Magnetoresistance in vdW Heterostructures

Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and magnetization at the interface. Because of UMR s linear dependence on applied charge current and magnetization, it can be used to electrically read the magnetization state. However, in conventional spin source materials, the spin polarization of an electric field induced spin current is restricted to be in the film plane and hence the ensuing UMR can only respond to the in plane component of the magnetization. On the other hand, magnets with perpendicular magnetic anisotropy (PMA) are highly desired for magnetic memory and spin-logic devices, while the electrical read out of PMA magnets through UMR is critically missing. Here, we report the discovery of an unconventional UMR in bilayer heterostructures of a topological semimetal (WTe2) and a PMA ferromagnetic insulator (Cr2Ge2Te6, CGT), which allows to electrically read the up and down magnetic states of the CGT layer by measuring the longitudinal resistance. Our theoretical calculations based on a tight binding model show that the unconventional UMR originates from the interplay of crystal symmetry breaking in WTe2 and magnetic exchange interaction across the WTe2 and CGT interface. Combining with the ability of WTe2 to obtain magnetic field free switching of the PMA magnets, our discoveries open an exciting pathway to achieve two terminal magnetic memory devices that operate solely on the spin orbit torque and UMR, which is critical for developing next-generation non volatile and low power consumption data storage technologies.

cond-mat.mes-hall↗

arXiv2024

Error Detection and Correction Codes for Safe In-Memory Computations

In-Memory Computing (IMC) introduces a new paradigm of computation that offers high efficiency in terms of latency and power consumption for AI accelerators. However, the non-idealities and defects of emerging technologies used in advanced IMC can severely degrade the accuracy of inferred Neural Networks (NN) and lead to malfunctions in safety-critical applications. In this paper, we investigate an architectural-level mitigation technique based on the coordinated action of multiple checksum codes, to detect and correct errors at run-time. This implementation demonstrates higher efficiency in recovering accuracy across different AI algorithms and technologies compared to more traditional methods such as Triple Modular Redundancy (TMR). The results show that several configurations of our implementation recover more than 91% of the original accuracy with less than half of the area required by TMR and less than 40% of latency overhead.

cs.AR↗

arXiv2023

Experimental Validation of Memristor-Aided Logic Using 1T1R TaOx RRAM Crossbar Array

Memristor-aided logic (MAGIC) design style holds a high promise for realizing digital logic-in-memory functionality. The ability to implement a specific gate in a MAGIC design style hinges on the SET-to-RESET threshold ratio. The TaOx memristive devices exhibit distinct SET-to-RESET ratios, enabling the implementation of OR and NOT operations. As the adoption of the MAGIC design style gains momentum, it becomes crucial to understand the breakdown of energy consumption in the various phases of its operation. This paper presents experimental demonstrations of the OR and NOT gates on a 1T1R crossbar array. Additionally, it provides insights into the energy distribution for performing these operations at different stages. Through our experiments across different gates, we found that the energy consumption is dominated by initialization in the MAGIC design style. The energy split-up is 14.8%, 85%, and 0.2% for execution, initialization, and read operations respectively.

cs.ET↗

arXiv2023

MemSPICE: Automated Simulation and Energy Estimation Framework for MAGIC-Based Logic-in-Memory

Existing logic-in-memory (LiM) research is limited to generating mappings and micro-operations. In this paper, we present~\emph{MemSPICE}, a novel framework that addresses this gap by automatically generating both the netlist and testbench needed to evaluate the LiM on a memristive crossbar. MemSPICE goes beyond conventional approaches by providing energy estimation scripts to calculate the precise energy consumption of the testbench at the SPICE level. We propose an automated framework that utilizes the mapping obtained from the SIMPLER tool to perform accurate energy estimation through SPICE simulations. To the best of our knowledge, no existing framework is capable of generating a SPICE netlist from a hardware description language. By offering a comprehensive solution for SPICE-based netlist generation, testbench creation, and accurate energy estimation, MemSPICE empowers researchers and engineers working on memristor-based LiM to enhance their understanding and optimization of energy usage in these systems. Finally, we tested the circuits from the ISCAS'85 benchmark on MemSPICE and conducted a detailed energy analysis.

cs.ET↗

arXiv2023

Discovery of interlayer plasmon polaron in graphene/WS$_2$ heterostructures

Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations where charge carriers induce a lattice distortion due to the electron-phonon interaction, the conducting states get "dressed". This leads to the formation of polaronic quasiparticles that dramatically impact charge transport, surface reactivity, thermoelectric and optical properties, as observed in a variety of crystals and interfaces composed of polar materials [2-6]. Similarly, when oscillations of the charge density couple to conduction electrons the more elusive plasmon polaron emerges [7], which has been detected in electron-doped semiconductors [8-10]. However, the exploration of polaronic effects on low energy excitations is still in its infancy in two-dimensional (2D) materials. Here, we present the discovery of an interlayer plasmon polaron in heterostructures composed of graphene on top of SL WS$_2$. By using micro-focused angle-resolved photoemission spectroscopy (microARPES) during in situ doping of the top graphene layer, we observe a strong quasiparticle peak accompanied by several carrier density-dependent shake-off replicas around the SL WS$_2$ conduction band minimum (CBM). Our results are explained by an effective many-body model in terms of a coupling between SL WS$_2$ conduction electrons and graphene plasmon modes. It is important to take into account the presence of such interlayer collective modes, as they have profound consequences for the electronic and optical properties of heterostructures that are routinely explored in many device architectures involving 2D transition metal dichalcogenides (TMDs) [11-15].

cond-mat.mes-hall↗

arXiv2023

Should We Even Optimize for Execution Energy? Rethinking Mapping for MAGIC Design Style

Memristor-based logic-in-memory (LiM) has become popular as a means to overcome the von Neumann bottleneck in traditional data-intensive computing. Recently, the memristor-aided logic (MAGIC) design style has gained immense traction for LiM due to its simplicity. However, understanding the energy distribution during the design of logic operations within the memristive memory is crucial in assessing such an implementation's significance. The current energy estimation methods rely on coarse-grained techniques, which underestimate the energy consumption of MAGIC-styled operations performed on a memristor crossbar. To address this issue, we analyze the energy breakdown in MAGIC operations and propose a solution that utilizes mapping from the SIMPLER MAGIC tool to achieve accurate energy estimation through SPICE simulations. In contrast to existing research that primarily focuses on optimizing execution energy, our findings reveal that the memristor's initialization energy in the MAGIC design style is, on average, 68x higher. We demonstrate that this initialization energy significantly dominates the overall energy consumption. By highlighting this aspect, we aim to redirect the attention of designers towards developing algorithms and strategies that prioritize optimizations in initializations rather than execution for more effective energy savings.

cs.ET↗

arXiv2023

Finite State Automata Design using 1T1R ReRAM Crossbar

Data movement costs constitute a significant bottleneck in modern machine learning (ML) systems. When combined with the computational complexity of algorithms, such as neural networks, designing hardware accelerators with low energy footprint remains challenging. Finite state automata (FSA) constitute a type of computation model used as a low-complexity learning unit in ML systems. The implementation of FSA consists of a number of memory states. However, FSA can be in one of the states at a given time. It switches to another state based on the present state and input to the FSA. Due to its natural synergy with memory, it is a promising candidate for in-memory computing for reduced data movement costs. This work focuses on a novel FSA implementation using resistive RAM (ReRAM) for state storage in series with a CMOS transistor for biasing controls. We propose using multi-level ReRAM technology capable of transitioning between states depending on bias pulse amplitude and duration. We use an asynchronous control circuit for writing each ReRAM-transistor cell for the on-demand switching of the FSA. We investigate the impact of the device-to-device and cycle-to-cycle variations on the cell and show that FSA transitions can be seamlessly achieved without degradation of performance. Through extensive experimental evaluation, we demonstrate the implementation of FSA on 1T1R ReRAM crossbar.

cs.ET↗