arXiv subjects

Sita Dugu

Publications and source records attributed to Sita Dugu.

6 recordsLinked to original sources

arXiv2026

Thin film synthesis of SrZn2P2 with SrI2 post-annealing for enhanced crystallinity and optoelectronic quality

Ternary Zintl phosphides are promising light-absorbing semiconductors for thin-film optoelectronic applications, but strategies for controlling their microstructure and optoelectronic quality remain underexplored. Here, we report the synthesis of phase-pure SrZn2P2 thin films using radio-frequency co-sputtering in a PH3 + Ar atmosphere and investigate the impact of post-growth processing on their structural and optical properties. Grazing-incidence X-ray scattering and Raman spectroscopy confirm the formation of crystalline SrZn2P2 films over a finite compositional window. Optical measurements reveal strong absorption near the direct-band-gap energy (~1.8 eV) and near-band-edge photoluminescence. Further, we have studied the effects of chemically compatible halide-assisted annealing. It is found that SrI2 treatments lead to pronounced grain growth and reduced diffraction peak broadening while preserving phase purity, in contrast to rapid thermal or forming-gas annealing. Notably, annealing with SrI2 at 450 °C significantly enhances both the intensity and spatial uniformity of the photoluminescence, thus connecting the observed microstructural consolidation with improved radiative recombination. Our study demonstrates that halide-assisted annealing provides an effective pathway for microstructural control in SrZn2P2 thin films and highlights a generalizable processing strategy for advancing Zintl phosphide semiconductors toward optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2026

Long photoexcited carrier lifetime in a stable and earth-abundant zinc polyphosphide

Halide perovskites have revolutionized optoelectronics by demonstrating that long carrier lifetime can be achieved in materials processed in relatively uncontrolled environments, whereas conventional inorganic semiconductors typically suffer from short carrier lifetime unless very carefully prepared and postprocessed. Here, we report the discovery of exceptionally long photoexcited carrier lifetime in monoclinic ZnP2, effectively bridging the carrier lifetime gap between direct-gap inorganic semiconductors and halide perovskites. Through computational screening, ZnP2 is identified as a long carrier lifetime semiconductor characterized by an unconventional polyphosphide bonding, combining covalently bonded phosphorus chains and polar-covalent Zn-P tetrahedra. Experimentally, ZnP2 crystals synthesized from low-purity precursors exhibit bright band-to-band photoluminescence at 1.49 eV and carrier lifetimes of up to 1 $μ$s. Further analysis reveals that the polyphosphide bonding of ZnP2 suppresses the formation of deep intrinsic defects, making it defect resistant. Combined with its remarkable environmental stability, ZnP2 presents a highly promising material for solar absorbers and light emitters. Our work illustrates that underexplored inorganic materials spaces with unusual chemical bonding hold great promise for discovering novel optoelectronic materials.

cond-mat.mtrl-sci↗

arXiv2025

Interplay of Ferromagnetic and Antiferromagnetic Interactions in Epitaxial Co$_3$ZnN

Antiperovskite nitrides with the general formula M$_3$N have attracted significant attention due to their tunable electronic and magnetic properties. Among them are many cobalt-based compounds predicted to exhibit high thermodynamic stability and intriguing magnetic behavior. Here, we report the synthesis and magnetic characterization of epitaxial Co$_3$ZnN thin films grown by radio frequency sputtering on SrTiO$_3$ (STO) and MgO substrates. X-ray diffraction confirms phase-pure (00l)-oriented films with cube-on-cube epitaxy on STO, with a c-lattice parameter of 3.752 angstroms. Magnetic measurements reveal clear hysteresis at 2 K with a coercive field of ~ 0.12 T and a small net moment of 0.11 $μ_B$/f.u., suggesting either a canted antiferromagnetic (AFM) or ferrimagnetic (FiM) configuration. Temperature-dependent magnetization measurements show a transition near 25 K, with strong AFM interactions (Curie-Weiss $Θ$ = -80.6 K) at high temperatures and short-range ferromagnetic correlations ($Θ$ = +9.7 K) emerging near the transition. Complementary density functional theory (DFT) and Monte Carlo simulations indicate a ferromagnetic (FM) ground state, with the FM-AFM energy difference decreasing systematically with increasing supercell size, consistent with competition between FM and AFM/FiM interactions. These results highlight Co$_3$ZnN as a magnetically complex antiperovskite nitride with competing exchange interactions.

cond-mat.mtrl-sci↗

arXiv2025

A Map of the Zintl AM2Pn2 Compounds: Influence of Chemistry on Stability and Electronic Structure

The AM2Pn2 (A= Ca, Sr, Ba, Yb, Mg; M= Mn, Zn, Cd, Mg; and Pn=N, P, As, Sb, Bi) family of Zintl phases has been known as thermoelectric materials and has recently gained much attention for highly promising materials for solar absorbers in single junction and tandem solar cells. In this paper we will, from first-principles, explore the entire family of AM2Pn2 compounds in terms of their ground state structure, thermodynamic stability, and electronic structure. We also perform photoluminescence spectroscopy on bulk powder and thin film samples to verify our results, including the first measurements of the bandgaps of SrCd2P2 and CaCd2P2. The AM2Pn2 compounds exhibit broad stability, are mostly isostructural in the CaAl2Si2-type structure (P3m1), and cover a wide range of bandgaps from 0 to beyond 3 eV. This could make them useful for a variety of purposes, for which we propose several candidates, such as CaZn2N2 for tandem top cell solar absorbers and SrCd2Sb2 and CaZn2Sb2 for infrared detectors. By examining the band structures of the AM2Pn2, we find that Mg3Sb2 has the most promise as a thermoelectric material due to several off-Γ valence band pockets which are unique to it among the compositions studied here.

cond-mat.mtrl-sci↗

arXiv2024

Low-Temperature Synthesis of Stable CaZn$_2$P$_2$ Zintl Phosphide Thin Films as Candidate Top Absorbers

The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range of ~1.5-2.3 eV, for use in the top cell paired with a narrower-gap bottom cell. An outstanding challenge is finding materials with suitable optoelectronic and defect properties, good operational stability, and synthesis conditions that preserve underlying device layers. This study demonstrates the Zintl phosphide compound CaZn$_2$P$_2$ as a compelling candidate semiconductor for these applications. We prepare phase pure, 500 nm-thick CaZn$_2$P$_2$ thin films using a scalable reactive sputter deposition process at growth temperatures as low as 100 °C, which is desirable for device integration. UV-vis spectroscopy shows that CaZn$_2$P$_2$ films exhibit an optical absorptivity of ~10$^4$ cm$^-$$^1$ at ~1.95 eV direct band gap. Room-temperature photoluminescence (PL) measurements show near-band-edge optical emission, and time-resolved microwave conductivity (TRMC) measurements indicate a photoexcited carrier lifetime of ~30 ns. CaZn$_2$P$_2$ is highly stable in both ambient conditions and moisture, as evidenced by PL and TRMC measurements. Experimental data are supported by first-principles calculations, which indicate the absence of low-formation-energy, deep intrinsic defects. Overall, our study should motivate future work integrating this potential top cell absorber material into tandem solar cells.

cond-mat.mtrl-sci↗

arXiv2024

Thin Film Synthesis, Structural Analysis, and Magnetic Properties of Novel Ternary Transition Metal Nitride MnCoN2

Recent high-throughput computational searches have predicted many novel ternary nitride compounds providing new opportunities for materials discovery in under explored phase spaces. Nevertheless, there are hardly any predictions and/or syntheses that incorporate only transition metals into new ternary nitrides. Here, we report on the synthesis, structure, and properties of MnCoN$_2$, a new ternary nitride material comprising only transition metals and N. We find that crystalline MnCoN$_2$ can be stabilized over its competing binaries, and over a tendency of this system to become amorphous, by controlling growth temperature within a narrow window slightly above ambient condition. We find that single-phase MnCoN$_2$ thin films form in a cation-disordered rocksalt crystal structure, which is supported by ab-initio calculations. X-ray photoelectron spectroscopy analysis suggests that MnCoN$_2$ is sensitive to oxygen through various oxides and hydroxides binding to cobalt on the surface. X-ray absorption spectroscopy is used to verify that Mn$^{3+}$ and Co$^{3+}$ cations exist in an octahedrally-coordinated environment, which is distinct from a combination of CoN and MnN binaries and in agreement with the rocksalt-based crystal structure prediction. Magnetic measurements suggest that MnCoN$_2$ has a canted antiferromagnetic ground state below 10 K. We extract a Weiss temperature of $θ$ = -49.7 K, highlighting the antiferromagnetic correlations in MnCoN$_2$.

cond-mat.mtrl-sci↗