arXiv subjects

Sitangshu Bhattacharya

Publications and source records attributed to Sitangshu Bhattacharya.

9 recordsLinked to original sources

arXiv2026

Phonon-Assisted Photoluminescence and Ultrafast Exciton Dynamics in Two-Dimensional Silicon Carbide

Phonon assisted photoluminescence provides a direct window into exciton phonon interactions in semiconductors. Using fully ab initio many-body perturbation theory, including finite momentum Bethe Salpeter calculations, we investigate phonon-assisted emission and exciton dynamics in two dimensional (2D) hexagonal silicon carbide (hSiC) and benchmark its response against 2D h boron nitride (hBN). By explicitly resolving exciton phonon matrix elements, we identify an electron-phonon scattering channel mediated by A$^\prime$ high energy longitudinal and transverse optical phonons as the dominant contributors to sideband formation and quantify their spectral weights. We find that h SiC exhibits pronounced phonon-assisted sidebands comparable to hBN, despite a smaller exciton phonon energy separation and fewer resolved replicas. The bright \textbf{K}\textbf{K} exciton governs near UV zero phonon emission, while intervalley excitons acquire radiative character through symmetry allowed optical phonon coupling. Temperature dependent scattering rates reveal an ultrashort bright exciton lifetime of approximately 300 fs at 10 K, highlighting rapid exciton relaxation driven by intrinsic phonon channels.

cond-mat.str-el↗

arXiv2026

Dominant Role of Sulphur divacancy in Charge Trapping Dynamics in MoS$_2$

Intrinsic defects govern carrier trapping and recombination in two-dimensional semiconductors, yet the microscopic origin of defect-dependent capture dynamics remains unclear. Here, we compute carrier capture coefficients of vacancy defects, treating monolayer MoS$_2$ as a prototype, from first principles. We find that the single Sulphur vacancy forms a shallow defect with a small capture coefficient of $\sim 10^{-16}\ \mathrm{cm}^3/\mathrm{s}$, whereas the Sulphur divacancy exhibits a capture coefficient larger by seven orders of magnitude, $\sim 10^{-9}\ \mathrm{cm}^3/\mathrm{s}$, despite being only moderately deeper in energy. This enhancement originates from strong lattice relaxation enabling efficient multiphonon capture. Consequently, single vacancies contribute weakly to trapping, while Sulphur divacancies dominate nonradiative recombination and reduce quantum yield. In contrast, molybdenum vacancies and Sulphur antisites, although deep, show much smaller capture coefficients, indicating a limited role in carrier trapping in n-type devices.

cond-mat.str-el↗

arXiv2025

Strain-Induced Activation of Symmetry-Forbidden Exciton-Phonon Couplings for Enhanced Phonon-Assisted Photoluminescence in MoS$_2$ Monolayers

Phonon-assisted photoluminescence (PL) in molybdenum-based two-dimensional dichalcogenides is typically weak due to the dormant phonon coupling with optically inactive momentum-dark (intervalley) excitons, unlike in tungsten-based dichalcogenides where such processes are more prominent. Despite this inefficiency, we revisit excitons in MoS$_2$ using rigorous finite-momentum Bethe-Salpeter equation calculations to identify ways to enhance phonon-assisted recombination channels. Our ab-initio results, complemented by group-theoretic analyses, reveal that while unstrained MoS$_2$ exhibits no phonon-assisted PL emissions at cryogenic temperatures due to forbidden A$^{\prime\prime}$ phonon modes, biaxial strain opens a pathway to significantly intensify this emission by activating hole-phonon A$^{\prime}$-mediated scattering channels. By calculating allowed exciton-phonon matrix elements and scattering rates, we demonstrate how strain redistributes oscillator strengths toward radiative recombination. These findings provide a promising route to improving PL emission efficiency in various metal dichalcogenide monolayers through strain engineering and offer valuable insights for further exploration of exciton-phonon dynamics, including time-resolved spectroscopic studies.

cond-mat.mtrl-sci↗

arXiv2024

Phonon-Assisted Photoluminescence and Exciton Recombination in Monolayer Aluminum Nitride

Efficient solid-state photon emitters with longer operating lifetimes in the ultraviolet (UV) wavelength range are crucial for optoelectronic devices. However, finding suitable material candidates has been a significant challenge. Here, we demonstrate that hexagonal aluminum nitride (AlN) monolayers exhibit strong photoluminescence emission within the UV range of 3.94 - 4.05 eV. We show that these emissions in indirect bandgap AlN are facilitated by phonon modes with finite lattice momentum. These phonon modes promote efficient recombination of electrons and holes from the $Γ$ to K point of the Brillouin zone. Our findings provide a foundation for developing advanced optoelectronic devices and efficient UV light sources based on hexagonal AlN monolayers.

cond-mat.mes-hall↗

arXiv2024

Phonon Assisted Exciton Processes in Two-Dimensional Tungsten Monocarbide

n this study, we utilize a rigorous ab initio-based finite momentum Bethe-Salpeter equation to investigate the photoluminescence emission in two-dimensional hexagonal tungsten carbide (h-WC). This thermodynamically stable monolayer exhibits an indirect optical gap, resulting in phonon-assisted emission. We observe that light absorption is a direct process centered around the direct quasiparticle gap, while light emission is indirect and requires modes between $Γ$-$M$ in the phonon dispersion. The emission lines feature prominent phonon replicas at cryogenic temperatures, particularly near-infrared wavelengths (1.09 and 1.17 eV), and we observe exciton thermalization with the crystal beyond 25 K. Additionally, non-radiative recombination is a remarkably fast process, occurring at order of a few femtoseconds (4.8 fs at 0 K and 2.8 fs at 300 K) compared to radiative recombination (2.3 ps at 0 K and 214 ns at 300 K). These optical characteristics of 2D h-WC may facilitate the promise of photon-emitter devices for near-infrared signal communication.

cond-mat.mtrl-sci↗

arXiv2024

Excitons, Optical Spectra, and Electronic Properties of Semiconducting Hf-based MXenes

Semiconducting MXenes are an intriguing two-dimensional (2D) material class with promising electronic and optoelectronic properties. Here, we focused on recently prepared Hf-based MXenes, namely Hf$_3$C$_2$O$_2$ and Hf$_2$CO$_2$. Using the first-principles calculation and excited state corrections, we proved its dynamical stability, reconciled its semiconducting behavior, and obtained fundamental gaps by the many-body GW method (indirect 1.1 eV and 2.2 eV, respectively, direct 1.4 eV and 3.5 eV, respectively). Using the Bethe-Salpeter equation (BSE) we subsequently provided optical gaps (0.9 eV and 2.7eV, respectively), exciton binding energies, absorption spectra, and other properties of excitons in both Hf-based MXenes. The indirect character of both 2D materials further allowed a significant decrease of excitation energies by considering indirect excitons with exciton momentum along the $Γ$-M path in the Brillouin zone. The first bright excitons are strongly delocalized in real space while contributed by only a limited number of electron-hole pairs around the M point in the k-space from the valence and conduction band. A diverse range of excitonic states in Hf$_3$C$_2$O$_2$ MXene lead to a 4\% and 13\% absorptance for the first and second peaks in the infrared region of absorption spectra, respectively. In contrast, a prominent 28\% absorptance peak in the visible region appears in Hf$_2$CO$_2$ MXene. Results from radiative lifetime calculations indicate the promising potential of these materials in optoelectric devices requiring sustained and efficient exciton behavior.

cond-mat.mtrl-sci↗

arXiv2020

Exciton-driven giant non-linear overtone signals from buckled hexagonal monolayer GaAs

We report here a giant $\left|χ_{baa}^{2}\right|=$780 pm/V second harmonic and $\left|χ_{aaaa}^{3}\right|=$1.4$\times$10$^{-17}$ m$^{2}$/V$^{2}$ third harmonic signal from single atomic sheet of buckled hexagonal GaAs. We demonstrate this through the solution of an ab-initio real-time Bethe-Salpeter equation by including the electron-hole screened-exchange self-energy. The coupling between time-dependent external electric field and correlated electrons is treated within the modern theory of polarization. The result of our calculation envisage monolayer GaAs to be a prominent member in the material library of non-linear signal generations.

cond-mat.str-el↗

arXiv2019

Giant exciton-phonon coupling and zero-point renormalization in hexagonal monolayer boron nitride

We report here a giant zero-point energy renormalization of 273 meV in the direct band-gap at $\textbf{K}$ and a 571 meV of blue-shifting in the position of the doubly-degenerate brightest excitonic peak in monolayer hexagonal boron nitride. The non-radiative exciton linewidth is found to be 97 meV at 0K with a large coupling strength of 1.1 eV. This linewidth is found to be mainly dominated by the scattering from the longitudinal optical phonons near the degenerate LO-TO mode, with negligible contributions from other lower branches. Additionally, the band-gap has a temperature dependent slope of -0.53 meVK$^{-1}$, which we found to be in excellent agreement with the reported experimental data on large diameter boron nitride nanotubes. We obtained our results by solving a coupled electron-hole Bethe-Salpeter equation including the lattice vibrational dynamics, purely using ab-initio formalism.

cond-mat.str-el↗

arXiv2018

Exciton-Phonon Coupling and Band-Gap Renormalization in Monolayer WSe$_{2}$

Using a fully ab-initio methodology, we demonstrate how the lattice vibrations couple with neutral excitons in monolayer WSe2 and contribute to the non-radiative excitonic lifetime. We show that only by treating the electron-electron and electron-phonon interactions at the same time it is possible to obtain an unprecedented agreement of the zero and finite-temperature optical gaps and absorption spectra with the experimental results. The bare energies were calculated by solving the Kohn-Sham equations, whereas G$_{0}$W$_{0}$ many body perturbation theory was used to extract the excited state energies. A coupled electron-hole Bethe-Salpeter equation was solved incorporating the polaronic energies to show that it is the in-plane torsional acoustic phonon branch that contributes mostly to the A and B exciton build-up. We find that the three A, B and C excitonic peaks exhibit different behaviour with temperature, displaying different non-radiative linewidths. There is no considerable transition in the strength of the excitons with temperature but A-exciton exhibits darker nature in comparison to C-exciton. Further, all the excitonic peaks redshifts as temperature rises. Renormalization of the bare electronic energies by phonon interactions and the anharmonic lattice thermal expansion causes a decreasing band-gap with increasing temperature. The zero point energy renormalization (31 meV) is found to be entirely due to the polaronic interaction with negligible contribution from lattice anharmonicites. These findings may find a profound impact on electronic and optoelectronic device technologies based on these monolayers.

cond-mat.str-el↗