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Sneh Saurabh

Publications and source records attributed to Sneh Saurabh.

4 recordsLinked to original sources

Deep Neural Network Augmented Wireless Channel Estimation for Preamble-based OFDM PHY on Zynq System on Chip

Reliable and fast channel estimation is crucial for next-generation wireless networks supporting a wide range of vehicular and low-latency services. Recently, deep learning (DL) based channel estimation has been explored as an efficient alternative to conventional least-square (LS) and linear minimum mean square error (LMMSE) approaches. Most of these DL approaches have not been realized on system-on-chip (SoC), and preliminary study shows that their complexity exceeds the complexity of the entire physical layer (PHY). The high latency of DL is another concern. This paper considers the design and implementation of deep neural network (DNN) augmented LS-based channel estimation (LSDNN) for preamble-based orthogonal frequency-division multiplexing (OFDM) physical layer (PHY) on SoC. We demonstrate the gain in performance compared to the conventional LS and LMMSE approaches. Via software-hardware co-design, word-length optimization, and reconfigurable architectures, we demonstrate the superiority of the LSDNN over the LS and LMMSE for a wide range of signal-to-noise ratio (SNR), number of pilots, preamble types, and wireless channels. Further, we evaluate the performance, power, and area (PPA) of the LS and LSDNN application-specific integrated circuit (ASIC) implementations in 45 nm technology. We demonstrate that word-length optimization can substantially improve PPA for the proposed architecture in ASIC implementations.

cs.AR

Investigation of the Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field Effect Transistor

In this paper, we propose the application of a Dual Material Gate (DMG) in a Tunnel Field Effect Transistor (TFET) to simultaneously optimize the on-current, the off-current and the threshold voltage, and also improve the average subthreshold slope, the nature of the output characteristics and the immunity against the DIBL effects. We demonstrate that if appropriate work-functions are chosen for the gate materials on the source side and the drain side, the tunnel field effect transistor shows a significantly improved performance. We apply the technique of DMG in a Strained Double Gate Tunnel Field Effect Transistor with a high-k gate dielectric to show an overall improvement in the characteristics of the device along with achieving a good on-current and an excellent average subthreshold slope. The results show that the DMG technique can be applied to TFETs with different channel materials, channel lengths, gate-oxide materials, gate-oxide thicknesses and power supply levels to achieve significant gains in the overall device characteristics.

cond-mat.mes-hall

Estimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliability

Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect to the process induced variations in (i) the channel length and (ii) the thickness of the silicon thin-film and the gate oxide. This paper, for the first time, studies the impact of the above process variations on the electrical characteristics of a Double Gate Tunnel Field Effect Transistor (DGTFET). Using two dimensional device simulations, we propose the Strained Double Gate Tunnel Field Effect Transistor (SDGTFET) with high-k gate dielectric as a possible solution for effectively compensating the process induced variations in the on-current, threshold voltage and subthreshold-swing improving the reliability of the DGTFET.

cond-mat.mes-hall

Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit applications, these problems need to be tackled. In this paper, a novel lateral strained double-gate TFET (SDGTFET) is presented. Using device simulation, we show that the SDGTFET has a higher on-current, low leakage, low threshold voltage, excellent subthreshold slope, and good short channel effects and also meets important ITRS guidelines.

cond-mat.mes-hall