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Sobhit Singh

Publications and source records attributed to Sobhit Singh.

At least 37 records · Page 2Linked to original sources

Cyclic Ferroelectric Switching and Quantized Charge Transport in CuInP$_2$S$_6$

The van der Waals layered ferroelectric CuInP$_2$S$_6$ has been found to exhibit a variety of intriguing properties arising from the fact that the Cu ions are unusually mobile in this system. While the polarization switching mechanism is usually understood to arise from Cu ion motion within the monolayers, a second switching path involving Cu motion across the van der Waals gaps has been suggested. In this work, we perform zero-temperature first-principles calculations on such switching paths, focusing on two types that preserve the periodicity of the primitive unit cell: ``cooperative" paths preserving the system's glide mirror symmetry, and ``sequential" paths in which the two Cu ions in the unit cell move independently of each other. We find that CuInP$_2$S$_6$ features a rich and varied energy landscape, and that sequential paths are clearly favored energetically both for cross-gap and through-layer paths. Importantly, these segments can be assembled to comprise a globally insulating cycle with the out-of-plane polarization evolving by a quantum as the Cu ions shift to neighboring layers. In this sense, we argue that CuInP$_2$S$_6$ embodies the physics of a quantized adiabatic charge pump.

cond-mat.mtrl-sci↗

An atomistic insight into moiré reconstruction in Twisted Bilayer Graphene beyond the magic angle

Twisted bilayer graphene exhibits electronic properties that are highly correlated with the size and arrangement of moiré patterns. While rigid rotation of two layers creates the topology of moiré patterns, local rearrangements of the atoms due to interlayer van der Waals interactions result in atomic reconstruction within the moiré cells. The ability to manipulate these patterns by controlling twist angle and/or externally applied strain provides a promising route to tune their properties. While this phenomenon has been extensively studied for angles close to or smaller than the magic angle (θm=1.1°), its extent for higher angles and how it evolves with strain is unknown and is believed to be mostly absent at high angles. We use theoretical and numerical analyses to resolve reconstruction in angles above θm using interpretive and fundamental physical measures. In addition, we propose a method to identify local regions within moiré cells and track their evolution with strain for a range of representative high twist angles. Our results show that reconstruction is actively present beyond the magic angle and its contribution to the evolution of the moiré cells is major. Our theoretical method to correlate local and global phonon behavior provides further validation on the role of reconstruction at higher angles. Our findings provide a better understanding of moiré reconstruction in large twist angles and the evolution of moiré cells in the presence of strain, that might be very crucial for twistronics-based applications.

cond-mat.mtrl-sci↗

Electronic structure of Humble defects in Ge and Ge$_{0.8}$Si$_{0.2}$

The group-IV diamond-structure elements are known to host a variety of planar defects, including {001} planar defects in C and {001}, {111} and {113} planar defects in Si and Ge. Among the {001} planar defects, the Humble defect, known for some time to occur in Ge, has recently also been observed in Si/Ge alloys, but the details of its electronic structure remain poorly understood. Here we perform first-principles density functional calculations to study Humble defects in both Ge and Ge$_{0.8}$Si$_{0.2}$. We also measure the Si L$_{2,3}$-edge electron energy loss spectra both at the defect and in a bulk-like region far from the defect, and compare with theoretical calculations on corresponding Si sites in our first-principles calculations. We find that inclusion of core-hole effects in the theory is essential for reproducing the observed L$_{2,3}$ edge spectra, and that once they are included, the results provide a set of fingerprints for different types of local atomic bonding environments in Ge$_{0.8}$Si$_{0.2}$. Our first-principles calculations reveal that the Humble defects have a tendency to enlarge the electronic band gap, which may have potential uses in band engineering. The use of hybrid functionals for an improved description of the band gap in these systems is also discussed.

cond-mat.mtrl-sci↗

Vibrational properties of CuInP2S6 across the ferroelectric transition

In order to explore the properties of a two-sublattice ferroelectric, we measured the infrared and Raman scattering response of CuInP2S6 across the ferroelectric and glassy transitions and compared our findings to a symmetry analysis, calculations of phase stability, and lattice dynamics. In addition to uncovering displacive character and a large hysteresis region surrounding the ferroelectric transition temperature T_C, we identify the vibrational modes that stabilize the polar phase and confirm the presence of two ferroelectric variants with opposite polarizations. Below TC, a poorly understood relaxational or glassy transition at Tg is characterized by local structure changes in the form of subtle peak shifting and activation of low frequency out-of-plane Cu- and In-containing modes. The latter are due to changes in the Cu/In coordination environments and associated order-disorder processes. Moreover, Tg takes place in two steps with another large hysteresis region and significant underlying scattering. Combined with imaging of the room temperature phase separation, this effort lays the groundwork for studying CuInP2S6 under external stimuli and in the ultra-thin limit.

cond-mat.mtrl-sci↗

Vibrational fingerprints of ferroelectric hafnia

Hafnia (HfO2) is a promising material for emerging chip applications due to its high-k dielectric behaviour, suitability for negative capacitance heterostructures, scalable ferroelectricity, and silicon compatibility. The lattice dynamics along with phononic properties such as thermal conductivity, contraction, and heat capacity are under-explored, primarily due to the absence of high quality single crystals. Herein, we report the vibrational properties of a series of HfO2 crystals stabilized with yttrium (chemical formula HfO2:xY, where x = 20, 12, 11, 8, and 0%) and compare our findings with a symmetry analysis and lattice dynamics calculations. We untangle the effects of Y by testing our calculations against the measured Raman and infrared spectra of the cubic, antipolar orthorhombic, and monoclinic phases and then proceed to reveal the signature modes of polar orthorhombic hafnia. This work provides a spectroscopic fingerprint for several different phases of HfO2 and paves the way for an analysis of mode contributions to high-k dielectric and ferroelectric properties for chip technologies.

cond-mat.mtrl-sci↗

Humble planar defects in SiGe nanopillars

We report a new \{001\} planar defect found in SiGe nanopillars. The defect structure, determined by atomic resolution electron microscopy, matches the Humble defect model proposed for diamond. We also investigated several possible variants of the Humble structure using first principles calculations and found that the one lowest in energy was also in best agreement with the STEM images. The pillar composition has been analyzed with electron energy loss spectroscopy, which hints at how the defect is formed. Our results show that the structure and formation process of defects in nanostructured group IV semiconductors can be different from their bulk counterparts.

cond-mat.mtrl-sci↗

Polarization selectivity of aloof-beam electron energy-loss spectroscopy in one-dimensional ZnO nanorods

Orientation dependent electronic properties of wurtzite zinc oxide nanorods are characterized by aloof beam electron energy-loss spectroscopy (EELS) carried out in a scanning transmission electron microscope (STEM). The two key crystal orientation differentiating transitions specific to the in-plane (13.0 eV) and out-of-plane (11.2 eV) directions with respect to the wurtzite structure are examined by first principles density-functional theory calculations. We note some degree of orientation dependence at the onset of direct band gap transition near 3.4 eV. We demonstrate that good polarization selectivity can be achieved by placing the electron probe at different locations around the specimen with increasing impact parameter while keeping the beam-specimen orientation fixed. The observed results are qualitatively elucidated in terms of the perpendicular electric fields generated by the fast electron (60 kV) used in the microscope. The fact that good polarization selectivity can be achieved by aloof beam EELS without the requirement of sample reorientation is an attractive aspect from the characterization method point of view in the STEM-EELS community.

cond-mat.mtrl-sci↗

High-temperature phonon-mediated superconductivity in monolayer Mg2B4C2

A new two-dimensional material { Mg2B4C2, belonging to the family of the conventional superconductor MgB2, is theoretically predicted to exhibit superconductivity with critical temperature Tc estimated in the 47-48 K range (predicted using the McMillian-Allen-Dynes formula) without any tuning of external parameters such as doping, strain, or substrate-induced effects. The origin of such a high intrinsic Tc is ascribed to the presence of strong electron-phonon coupling and topological Dirac states (which are absent in MgB2) yielding a large density of states at the Fermi level. This material also features a nontrivial electronic band topology exhibiting Dirac points, practically gapless Dirac nodal lines, and topological nontrivial edge states. Consequently, it is a potential candidate for realization of topological superconductivity in 2D. This system is obtained after replacing the chemically active boron layers in MgB2 by chemically inactive boron-carbon layers. Hence, the surfaces of this material are inert. Our calculations confirm the stability of 2D Mg2B4C2. We also find that the key features of this material remain essentially unchanged when its thickness is increased by modestly increasing the number of inner MgB2 layers.

cond-mat.supr-con↗

Pressure-induced creation and annihilation of Weyl points in Td- and 1T"-Mo0.5W0.5Te2

By means of first-principles density-functional theory calculations, we investigate the role of hydrostatic pressure on the electronic structure of Td (Pmn21 ) and 1T" (Pm) phases of Weyl semimetal Mo0.5 W0.5 Te2 , which is a promising material for phase-change memory technology and superconductivity. We particularly focus on changes occurring in the distribution of the gapless Weyl points (WPs) within 0 to 45 GPa pressure range. We further investigate the structural phase transition and lattice dynamics of the Td and 1T" phases within the aforementioned pressure range. Our calculations suggest that both the Td and 1T" phases of Mo0.5 W0.5 Te2 host four WPs in their full Brillouin zone at zero pressure. The total number of WPs increases to 44 (36) with increasing pressure via pair creation up to 20 (15) GPa for the T d (1T 00 ) phase, and beyond this pressure pair annihilation of WPs starts occurring leaving only 16 WPs at 45 GPa in both phases. The enthalpy versus pressure data reveal that the 1T 00 phase is more favorable below the critical pressure of 7.5 GPa, however, beyond this critical pressure the Td phase becomes enthalpically favorable. We also provide the calculated x-ray diffraction spectra along with the calculated Raman- and infrared-active phonon frequencies to facilitate the experimental identification of the studied phases.

cond-mat.mtrl-sci↗

Exploring DFT$+U$ parameter space with a Bayesian calibration assisted by Markov chain Monte Carlo sampling

Density-functional theory is widely used to predict the physical properties of materials. However, it usually fails for strongly correlated materials. A popular solution is to use the Hubbard corrections to treat strongly correlated electronic states. Unfortunately, the exact values of the Hubbard $U$ and $J$ parameters are initially unknown, and they can vary from one material to another. In this semi-empirical study, we explore the $U$ and $J$ parameter space of a group of iron-based compounds to simultaneously improve the prediction of physical properties (volume, magnetic moment, and bandgap). We used a Bayesian calibration assisted by Markov chain Monte Carlo sampling for three different exchange-correlation functionals (LDA, PBE, and PBEsol). We found that LDA requires the largest $U$ correction. PBE has the smallest standard deviation and its $U$ and $J$ parameters are the most transferable to other iron-based compounds. Lastly, PBE predicts lattice parameters reasonably well without the Hubbard correction.

cond-mat.mtrl-sci↗

Polarization switching mechanism in HfO$_2$ from first-principles lattice mode analysis

In this work, we carry out first-principles calculations and lattice mode analysis to investigate the polarization switching mechanism in HfO$_2$. Because the stability of the polar orthorhombic $Pca2_1$ phase of HfO$_2$ arises from a trilinear coupling, polarization switching requires the flipping of not only the polar $Γ_{15}^Z$ mode, but also at least one zone-boundary anti-polar mode. The coupling between the polar and anti-polar modes thus leads to substantial differences among different polarization switching paths. Specifically, our lattice-mode-coupling analysis shows that paths in which the $X_2^-$ mode is reversed involve a large activation energy, which because the $X_2^-$ mode is nonpolar cannot be directly overcome by applying an electric field. Our results show that the anti-polar $Pbca$ phase, whose structure is locally quite similar to that of the $Pca2_1$ phase, similarly cannot be transformed to this phase by an electric field as this would require local reversal of the $X_2^-$ mode pattern. Moreover, for the domain wall structure most widely considered, propagation also requires the reversal of the $X_2^-$ mode, leading to a much larger activation energy compared with that for the propagation of domain wall structures with a single sign for the $X_2^-$ mode. Finally, these first-principles results for domain wall propagation in HfO$_2$ have implications to many experimental observations, such as sluggish domain wall motion and robust ferroelectricity in thin films, and lattice mode analysis deepens our understanding of these distinctive properties of ferroelectric HfO$_2$.

cond-mat.mtrl-sci↗

Lattice dynamics and magnetic exchange interactions in GeCo2O4, a spinel with S = 1/2 pyrochlore lattice

GeCo$_2$O$_4$ is a unique system in the family of cobalt spinels ACo$_2$O$_4$ (A= Sn, Ti, Ru, Mn, Al, Zn, Fe, etc.) in which magnetic Co ions stabilize on the pyrochlore lattice exhibiting a large degree of orbital frustration. Due to the complexity of the low-temperature antiferromagnetic (AFM) ordering and long-range magnetic exchange interactions, the lattice dynamics and magnetic structure of GeCo$_2$O$_4$ spinel has remained puzzling. To address this issue, here we present theoretical and experimental investigations of the highly frustrated magnetic structure, and the infrared (IR) and Raman-active phonon modes in the spinel GeCo$_2$O$_4$, which exhibits an AFM ordering below the Néel temperature $T_N$ ~21 K, followed by a cubic ($Fd{\bar 3}m$) to tetragonal ($I4_{1}/amd$) structural phase transition at $T_S$ ~16 K. Our density-functional theory (DFT+U) calculations reveal that one needs to consider magnetic-exchange interactions up to the third nearest neighbors to get an accurate description of the low-temperature AFM order in GeCo$_2$O$_4$. At room temperature three distinct IR-active modes ($T_{1u}$) are observed at frequencies 680, 413, and 325 cm$^{-1}$ along with four Raman-active modes $A_{1g}$, $T_{2g}(1)$, $T_{2g}(2)$, and $E_{g}$ at frequencies 760, 647, 550, and 308 cm$^{-1}$, respectively, which match reasonably well with our DFT+U calculated values. All the IR-active and Raman-active phonon modes exhibit signatures of moderate spin-phonon coupling. The temperature dependence of various parameters, such as the shift, width, and intensity, of the Raman-active modes, is also discussed. Noticeable changes around $T_N$ and $T_S$ are observed in the Raman line parameters of the $E_{g}$ and $T_{2g}$ modes, which are associated with the modulation of the Co-O bonds in CoO$_6$ octahedra during the excitations of these modes.

cond-mat.mtrl-sci↗

MechElastic: A Python Library for Analysis of Mechanical and Elastic Properties of Bulk and 2D Materials

The MechElastic Python package evaluates the mechanical and elastic properties of bulk and 2D materials using the elastic coefficient matrix ($C_{ij}$) obtained from any ab-initio density-functional theory (DFT) code. The current version of this package reads the output of VASP, ABINIT, and Quantum Espresso codes (but it can be easily generalized to any other DFT code) and performs the appropriate post-processing of elastic constants as per the requirement of the user. This program can also detect the input structure's crystal symmetry and test the mechanical stability of all crystal classes using the Born-Huang criteria. Various useful material-specific properties such as elastic moduli, longitudinal and transverse elastic wave velocities, Debye temperature, elastic anisotropy, 2D layer modulus, hardness, Pugh's ratio, Cauchy's pressure, Kleinman parameter, and Lame's coefficients, can be estimated using this program. Another existing feature of this program is to employ the ELATE package [J. Phys.: Condens. Matter 28, 275201 (2016)] and plot the spatial variation of several elastic properties such as Poisson's ratio, linear compressibility, shear modulus, and Young's modulus in three dimensions. Further, the MechElastic package can plot the equation of state (EOS) curves for energy and pressure for a variety of EOS models such as Murnaghan, Birch, Birch-Murnaghan, and Vinet, by reading the inputted energy/pressure versus volume data obtained via numerical calculations or experiments. This package is particularly useful for the high-throughput analysis of elastic and mechanical properties of materials.

cond-mat.mtrl-sci↗

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

HfO2, a simple binary oxide, holds ultra-scalable ferroelectricity integrable into silicon technology. Polar orthorhombic (Pbc21) form in ultra-thin-films ascribes as the plausible root-cause of the astonishing ferroelectricity, which has thought not attainable in bulk crystals. Though, perplexities remain primarily due to the polymorphic nature and the characterization challenges at small-length scales. Herein, utilizing a state-of-the-art Laser-Diode-heated Floating Zone technique, we report ferroelectricity in bulk single-crystalline HfO2:Y as well as the presence of anti-polar Pbca phase at different Y concentrations. Neutron diffraction and atomic imaging demonstrate (anti-)polar crystallographic signatures and abundant 90o/180o ferroelectric domains in addition to the switchable polarization with little wake-up effects. Density-functional theory calculations suggest that the Yttrium doping and rapid cooling are the key factors for the desired phase. Our observations provide new insights into the polymorphic nature and phase controlling of HfO2, remove the upper size limit for ferroelectricity, and also pave a new road toward the next-generation ferroelectric devices.

cond-mat.mtrl-sci↗

Stabilization of competing ferroelectric phases of HfO$_2$ under epitaxial strain

Hafnia (HfO$_2$)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO$_2$ has various stable and metastable polymorphs with quite similar structures and energies. Identifying and stabilizing the ferroelectric functional phases of HfO$_2$ have attracted intensive research interest in recent years. In this work, first-principles calculations on (111)-oriented HfO$_2$ are used to discover that imposing an in-plane shear strain on the tetragonal phase induces a nonpolar to polar phase transition. This in-plane shear-induced polar phase is shown to be an epitaxial distortion of a known metastable ferroelectric $Pnm2_1$ phase of HfO$_2$. It is proposed that this ferroelectric $Pnm2_1$ phase can account for the recently observed ferroelectricity in the (111)-oriented HfO$_2$-based thin film [Nature Materials 17, 1095-1100 (2018)]. Further investigation of this second functional ferroelectric phase in HfO$_2$ could potentially improve the performances of HfO$_2$-based films in logic and memory devices.

cond-mat.mtrl-sci↗

Engineering Weyl phases and nonlinear Hall effects in T$_d$-MoTe$_2$

MoTe$_2$ has recently attracted much attention due to the observation of pressure-induced superconductivity, exotic topological phase transitions, and nonlinear quantum effects. However, there has been debate on the intriguing structural phase transitions among various observed phases of MoTe$_2$, and their connection to the underlying topological electronic properties. In this work, by means of density-functional theory (DFT+U) calculations, we investigate the structural phase transition between the polar T$_d$ and nonpolar 1T$'$ phases of MoTe$_2$ in reference to a hypothetical high-symmetry T$_0$ phase that exhibits higher-order topological features. In the T$_d$ phase we obtain a total of 12 Weyl points, which can be created/annihilated, dynamically manipulated, and switched by tuning a polar phonon mode. We also report the existence of a tunable nonlinear Hall effect in T$_d$-MoTe$_2$, and propose the use of this effect as a probe for the detection of polarity orientation in polar (semi)metals. By studying the role of dimensionality, we identify a configuration in which a nonlinear surface response current emerges. The potential technological applications of the tunable Weyl phase and the nonlinear Hall effect are discussed.

cond-mat.mtrl-sci↗

Polar and phase domain walls with conducting interfacial states in a Weyl semimetal MoTe2

Much of the dramatic growth in research on topological materials has focused on topologically protected surface states. While the domain walls of topological materials such as Weyl semimetals with broken inversion or time-reversal symmetry can provide a hunting ground for exploring topological interfacial states, such investigations have received little attention to date. Here, utilizing in-situ cryogenic transmission electron microscopy combined with first-principles calculations, we discover intriguing domain-wall structures in MoTe2, both between polar variants of the low-temperature(T) Weyl phase, and between this and the high-T high-order topological phase. We demonstrate how polar domain walls can be manipulated with electron beams and show that phase domain walls tend to form superlattice-like structures along the c axis. Scanning tunneling microscopy indicates a possible signature of a conducting hinge state at phase domain walls. Our results open avenues for investigating topological interfacial states and unveiling multifunctional aspects of domain walls in topological materials.

cond-mat.mtrl-sci↗

PyProcar: A Python library for electronic structure pre/post-processing

The PyProcar Python package plots the band structure and the Fermi surface as a function of site and/or s,p,d,f - projected wavefunctions obtained for each $k$-point in the Brillouin zone and band in an electronic structure calculation. This can be performed on top of any electronic structure code, as long as the band and projection information is written in the PROCAR format, as done by the VASP and ABINIT codes. PyProcar can be easily modified to read other formats as well. This package is particularly suitable for understanding atomic effects into the band structure, Fermi surface, spin texture, etc. PyProcar can be conveniently used in a command line mode, where each one of the parameters define a plot property. In the case of Fermi-surfaces, the package is able to plot the surface with colors depending on other properties such as the electron velocity or spin projection. The mesh used to calculate the property does not need to be the same as the one used to obtain the Fermi surface. A file with a specific property evaluated for each $k$-point in a $k-$mesh and for each band can be used to project other properties such as electron-phonon mean path, Fermi velocity, electron effective mass, etc. Another existing feature refers to the band unfolding of supercell calculations into predefined unit cells.

cond-mat.mtrl-sci↗