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Sohini Kar-Narayan

Publications and source records attributed to Sohini Kar-Narayan.

6 recordsLinked to original sources

Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity

We studied the magnetic properties of ferromagnetic-semiconductor composites based on nickel and porous-GaN, motivated by the effort to couple magnetic and semiconductor functionality. Nickel-infiltrated and nickel-coated (laminated thin-film) porous GaN structures were fabricated by electrodeposition, and their magnetic properties were subsequently examined collectively, by vibrating sample magnetometry and on the nanoscale, by magnetic force microscopy. We successfully demonstrated the ability to realize nickel infiltrated porous GaN, where the magnetic properties were dominated by the infiltrated material without a measurable surface contribution. We found that the structure and magnetization of electrodeposited porous-GaN/Ni composites depended on GaN degree of porosity and the amount of deposited nickel. The magnetization evolves from a nearly isotropic response in the infiltrated structures, to a shape-anisotropy controlled magnetic thin-film behaviour. Furthermore, both infiltrated and thin-film nickel electrodeposited on porous GaN were found to have low (< 0.1%) strain and corresponding low coercivity: < 6.4 and < 2.4 kA/m for infiltrated and thin-film, correspondingly. The most likely cause for the lowered strain is increased compliance of the porous GaN compared to bulk. These results encourage deeper investigation of magnetic nanostructure property tuning and of magnetic property coupling to GaN and similar materials.

cond-mat.mtrl-sci

Route to High-Performance Micro-solid Oxide Fuel Cells on Metallic Substrates

Micro-solid oxide fuel cells based on thin films have strong potential for use in portable power devices. However, devices based on silicon substrates typically involve thin-film metallic electrodes which are unstable at high temperatures. Devices based on bulk metal substrates overcome these limitations, though performance is hindered by the challenge of growing state-of-the-art epitaxial materials on metals. Here, we demonstrate for the first time the growth of epitaxial cathode materials on metal substrates (stainless steel) commercially supplied with epitaxial electrolyte layers (1.5 {um (Y2O3)0.15(ZrO2)0.85 (YSZ) + 50 nm CeO2). We create epitaxial mesoporous cathodes of (La0.60Sr0.40)0.95Co0.20Fe0.80O3 (LSCF) on the substrate by growing LSCF/MgO vertically aligned nanocomposite films by pulsed laser deposition, followed by selectively etching out the MgO. To enable valid comparison with the literature, the cathodes are also grown on single-crystal substrates, confirming state-of-the-art performance with an area specific resistance of 100ohmegacm2 at 500dC and activation energy down to 0.97 eV. The work marks an important step toward the commercialization of high-performance micro-solid oxide fuel cells for portable power applications.

physics.app-ph

Time-Resolved Open-Circuit Conductive Atomic Force Microscopy for Quantitative Analysis of Nanowire Piezoelectricity and Triboelectricity

Piezoelectric nanowires are promising materials for sensing, actuation and energy harvesting, due to their enhanced properties at the nanoscale. However, quantitative characterization of piezoelectricity in nanomaterials is challenging due to practical limitations and the onset of additional electromechanical phenomena, such as the triboelectric and piezotronic effects. Here, we present an open-circuit conductive atomic force microscopy (cAFM) methodology for quantitative extraction of the axial piezoelectric coefficients of nanowires. We show, both theoretically and experimentally, that the standard short-circuit cAFM mode is inadequate for piezoelectric characterization of nanowires, and that such measurements are governed by competing mechanisms. We introduce an alternative open-circuit configuration, and employ time-resolved electromechanical measurements, to extract the piezoelectric coefficients. This method was applied to GaAs, an important semiconductor, with relatively low piezoelectric coefficients. The results obtained for GaAs,~0.4-1 pm/V, are in good agreement with existing knowledge and theory. Our method represents a significant advance in understanding the coexistence of different electromechanical effects, and in quantitative piezoelectric nanoscale characterization. The easy implementation will enable better understanding of electromechanics at the nanoscale.

cond-mat.mes-hall

Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensembles

Semiconducting piezoelectric materials have attracted considerable interest due to their central role in the emerging field of piezotronics, where the development of a piezo-potential in response to stress or strain can be used to tune the band structure of the semiconductor, and hence its electronic properties. This coupling between piezoelectricity and semiconducting properties can be readily exploited for force or pressure sensing using nanowires, where the geometry and unclamped nature of nanowires render them particularly sensitive to small forces. At the same time, piezoelectricity is known to manifest more strongly in nanowires of certain semiconductors. Here, we report the design and fabrication of highly sensitive piezotronic pressure sensors based on GaAs nanowire ensemble sandwiched between two electrodes in a back-to-back diode configuration. We analyse the current-voltage characteristics of these nanowire-based devices in response to mechanical loading in light of the corresponding changes to the device band structure. We observe a high piezotronic sensitivity to pressure, of ~7800 meV/MPa. We attribute this high sensitivity to the nanowires being fully depleted due to the lack of doping, as well as due to geometrical pressure focusing and current funneling through polar interfaces.

physics.app-ph

Localized electromechanical interactions in ferroelectric P(VDF-TrFE) nanowires investigated by scanning probe microscopy

We investigate the electromechanical interactions in individual P(VDF-TrFE) nanowires in response to localized electrical poling via a conducting atomic force microscope tip. Spatially resolved measurements of piezoelectric coefficients and elastic moduli before and after poling reveal a striking dependence on the polarity of the poling field, notably absent in thin films of the same composition. These observations are attributed to the unclamped nature of the nanowires and the inherent asymmetry in their chemical and electrical interactions with the tip and underlying substrate. Our findings provide insights into the mechanism of poling/switching in polymer nanowires critical to ferroelectric device performance.

cond-mat.mtrl-sci

A Scalable Nanogenerator Based on Self-Poled Piezoelectric Polymer Nanowires with High Energy Conversion Efficiency

Nanogenerators based on piezoelectric materials convert ever-present mechanical vibrations into electrical power for energetically autonomous wireless and electronic devices. Nanowires of piezoelectric polymers are particularly attractive for harvesting mechanical energy in this way, as they are flexible, lightweight and sensitive to small vibrations. Previous studies have focused exclusively on nanowires grown by electrospinning, but this involves complex equipment, and high voltages of $\approx$ 10 kV that electrically pole the nanowires and thus render them piezoelectric. Here we demonstrate that nanowires of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) grown using a simple and cost-effective template-wetting technique, can be successfully exploited in nanogenerators without poling. A typical nanogenerator comprising $\approx$ 10$^{10}$ highly crystalline, self-poled, aligned nanowires spanning $\approx$ 2 cm$^2$ is shown to produce a peak output voltage of 3 V at 5.5 nA in response to low-level vibrations. The mechanical-to-electrical conversion efficiency of 11% exhibited by our template-grown nanowires is comparable with the best previously reported values. Our work therefore offers a scalable means of achieving high-performance nanogenerators for the next generation of self-powered electronics.

cond-mat.mtrl-sci