arXiv subjects

Somnath Bhattacharyya

Publications and source records attributed to Somnath Bhattacharyya.

23 records · Page 2Linked to original sources

arXiv2012

Conductivity crossover in nano-crystalline diamond films: Realization of a disordered superlattice-like structure

We present the electrical transport characteristics of a batch of nano-crystalline diamond films of varying nitrogen concentrations and explain the conduction mechanism by the disordered quasi-superlattice model applied to semiconductor heterostructures. Synthesized by the hot filament chemical vapour deposition technique, the degree of structural disorder in the films, confirmed from Raman spectroscopy, is found to be controllable, resulting in the transition of conduction mechanism from localized and activated to the metallic conduction regime. Hence through high field magneto-resistance measurements at low temperatures we firmly establish a conductivity crossover from hopping to 3D weak localization. The long electronic dephasing time and its weak temperature dependence suggest the possibility for diamond-based high-speed device applications.

cond-mat.mes-hall↗

arXiv2012

Direct evidence of intercalation in a topological insulator turned superconductor

A topological insulator Bi2Se3 which shows superconducting property due to Cu doping has been studied using high resolution transmission electron microscopy which provides for the first time, the direct evidence of intercalation sites. A careful study exhibits the presence of two intercalation sites in this material when projected along the [-1-1 2 0] direction. Stoichiometry of the intercalated unit cell was also calculated from the projected potential.

cond-mat.mtrl-sci↗

arXiv2011

Origin of conductivity cross over in entangled multi-walled carbon nanotube network filled by iron

A realistic transport model showing the interplay of the hopping transport between the outer shells of iron filled entangled multi-walled carbon nanotubes (MWNT) and the diffusive transport through the inner part of the tubes, as a function of the filling percentage, is developed. This model is based on low-temperature electrical resistivity and magneto-resistance (MR) measurements. The conductivity at low temperatures showed a crossover from Efros-Shklovski (E-S) variable range hopping (VRH) to Mott VRH in 3 dimensions (3D) between the neighboring tubes as the iron weight percentage is increased from 11% to 19% in the MWNTs. The MR in the hopping regime is strongly dependent on temperature as well as magnetic field and shows both positive and negative signs, which are discussed in terms of wave function shrinkage and quantum interference effects, respectively. A further increase of the iron percentage from 19% to 31% gives a conductivity crossover from Mott VRH to 3D weak localization (WL). This change is ascribed to the formation of long iron nanowires at the core of the nanotubes, which yields a long dephasing length (e.g. 30 nm) at the lowest measured temperature. Although the overall transport in this network is described by a 3D WL model, the weak temperature dependence of inelastic scattering length expressed as L_phi ~T^-0.3 suggests the possibility for the presence of one-dimensional channels in the network due to the formation of long Fe nanowires inside the tubes, which might introduce an alignment in the random structure.

cond-mat.mes-hall↗

arXiv2010

Anisotropic weakly localized transport in nitrogen-doped ultrananocrystalline diamond films

We establish the dominant effect of anisotropic weak localization (WL) in three dimensions associated with a propagative Fermi surface, on the conductivity correction in heavily nitrogen doped ultrananocrystalline diamond (UNCD) films based on magneto-resistance studies at low temperatures. Also, low temperature electrical conductivity can show weakly localized transport in 3D combined with the effect of electron-electron interactions in these materials, which is remarkably different from the conductivity in 2DWL or strong localization regime. The corresponding dephasing time of electronic wavefunctions in these systems described as ~ T^-p with p < 1, follows a relatively weak temperature dependence compared to the generally expected nature for bulk dirty metals having $p \geq 1$. The temperature dependence of Hall (electron) mobility together with an enhanced electron density has been used to interpret the unusual magneto-transport features and show delocalized electronic transport in these n-type UNCD films, which can be described as low-dimensional superlattice structures.

cond-mat.mes-hall↗

arXiv2010

Anomalous Raman features of silicon nanowires under high pressure

The potential of silicon nanowires (SiNWs), (diameter < 10 nm) to transform into rigid bundle-like structures with distinct phonon confinement under high pressure (<= 15 GPa), instead of amorphising as per previous reports, is demonstrated using in-situ Raman spectroscopy. The newly observed splitting of the second order transverse optical (2TO) Raman mode into 2TO(L) and 2TO(W) phonon modes at >= 5 GPa establishes a highly anisotropic and mode-dependent pressure response of these SiNWs. Properties of the novel structures are superior compared to other nano-structured silicon and bulk-Si in terms of increased linear modulus, more localized phonon confinement and less anharmonicity.

cond-mat.mes-hall↗