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Somnath Mahato

Publications and source records attributed to Somnath Mahato.

4 recordsLinked to original sources

Cation Engineering of Cu-Doped CsPbI3: Lead Substitution and Dimensional Reduction for Improved Scintillation Performance

To date, inorganic halide perovskite nanocrystals show promising contributions in emerging luminescent materials due to their high tolerance to defects. In particular, the development of cesium lead iodide (CsPbI3) has shown its efficiency for light-harvesting properties. However, further implementation is hindered due to the toxicity of the lead content. Therefore, in this study, we introduced Cu atoms to partially substitute Pb atoms (5% Cu) in the CsPbI3 lattice as a solution to reduce Pb toxicity. A partial lead material is substituted using Cu displays a larger Stokes shift (-67 nm) compared to the pristine, and resulted doped CsPbI3 not undergo the undesired self absorption. An outcome is focused on the champion of fast-component (tau_1) decay time ~0.6 ns. Temperature-dependent radioluminescence outlines an incremental change in the emission intensity is marginally centered at 713 +- 16 nm, which indicates Cu-doped CsPbI3 is not greatly affected by temperature. In addition, we report that the light yield (LY) pristine CsPbI3 after doping is increased to 3.0 +- 0.8 photons/keV. Our work provides physical insights into a tunable scintillation property using transition metal doping toward lead-free based scintillating perovskites.

cond-mat.mtrl-sci

Scaling Up Purcell-Enhanced Self-Assembled Nanoplasmonic Perovskite Scintillators into the Bulk Regime

Scintillators convert high-energy radiation into detectable photons and play a crucial role in medical imaging and security applications. The enhancement of scintillator performance through nanophotonics and nanoplasmonics, specifically using the Purcell effect, has shown promise but has so far been limited to ultrathin scintillator films because of the localized nature of this effect. This study introduces a method to expand the application of nanoplasmonic scintillators to the bulk regime. By integrating 100-nm-sized plasmonic spheroid and cuboid nanoparticles with perovskite scintillator nanocrystals, we enable nanoplasmonic scintillators to function effectively within bulk-scale devices. We experimentally demonstrate power and decay rate enhancements of up to (3.20 $\pm$ 0.20) and (4.20 $\pm$ 0.31) folds for plasmonic spheroid and cuboid nanoparticles, respectively, in a 5-mm thick CsPbBr$_{3}$ nanocrystal-polymer scintillator at RT. Theoretical modeling also predicts similar enhancements of up to (2.26 $\pm$ 0.31) and (3.02 $\pm$ 0.69) folds for the same nanoparticle shapes and dimensions. Moreover, we demonstrate a (2.07 $\pm$ 0.39) fold increase in light yield under $^{241}$Am $γ$-excitation. These findings provide a viable pathway for utilizing nanoplasmonics to enhance bulk scintillator devices, advancing radiation detection technology.

physics.optics

Adversarial-Ensemble Kolmogorov Arnold Networks for Enhancing Indoor Wi-Fi Positioning: A Defensive Approach Against Spoofing and Signal Manipulation Attacks

The research presents a study on enhancing the robustness of Wi-Fi-based indoor positioning systems against adversarial attacks. The goal is to improve the positioning accuracy and resilience of these systems under two attack scenarios: Wi-Fi Spoofing and Signal Strength Manipulation. Three models are developed and evaluated: a baseline model (M_Base), an adversarially trained robust model (M_Rob), and an ensemble model (M_Ens). All models utilize a Kolmogorov-Arnold Network (KAN) architecture. The robust model is trained with adversarially perturbed data, while the ensemble model combines predictions from both the base and robust models. Experimental results show that the robust model reduces positioning error by approximately 10% compared to the baseline, achieving 2.03 meters error under Wi-Fi spoofing and 2.00 meters under signal strength manipulation. The ensemble model further outperforms with errors of 2.01 meters and 1.975 meters for the respective attack types. This analysis highlights the effectiveness of adversarial training techniques in mitigating attack impacts. The findings underscore the importance of considering adversarial scenarios in developing indoor positioning systems, as improved resilience can significantly enhance the accuracy and reliability of such systems in mission-critical environments.

cs.LG

Charge transfer mediated giant photo-amplification in air-stable $α$-CsPbI$_3$ nanocrystals decorated 2D-WS$_2$ photo-FET with asymmetric contacts

Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively higher dark current and require a large operating gate voltage of the device. Here, we report novel air-stable cesium lead iodide/tungsten di-sulfide (CsPbI$_3$/WS$_2$) mixed dimensional heterostructure based photo-field-effect-transistors (photo-FETs) with asymmetric metal electrodes (Cr/WS$_2$/Au), exhibiting extremely low dark current (~10-12 A) with a responsivity of ~102 A/W at zero gate bias. The Schottky barrier (WS$_2$/Au interface) induced rectification characteristics in the channel accompanied by the excellent photogating effect from solution-processed $α$-phase CsPbI$_3$ NCs sensitizers, resulting in gate-tunable broadband photodetection with a very high responsivity (~104 A/W) and excellent sensitivity (~106). Most interestingly, the device shows superior performance even under high humidity (50-65%) conditions owing to the formation of cubic $α$-phase CsPbI$_3$ nanocrystals with a relatively smaller lattice constant (a = 6.2315 Å) and filling of surface vacancies (Pb2+ centres) with the sulfur atoms from WS$_2$ layer, thus protecting it from environmental degradation. These results emphasise a novel strategy for developing mixed dimensional hybrid heterostructure based phototransistors for futuristic integrated nano-optoelectronic systems.

cond-mat.mtrl-sci