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Songci Li

Publications and source records attributed to Songci Li.

At least 19 recordsLinked to original sources

Josephson Diode Effect from Nonequilibrium Current in a Superconducting Interferometer

We investigate the Josephson diode effect in a superconducting interferometer under nonequilibrium conditions. In contrast to its thermodynamic counterpart, which requires the simultaneous breaking of time-reversal and inversion symmetry, we demonstrate that a diode-like asymmetry of the critical current can emerge solely due to a dissipative current in the normal region of an otherwise symmetric Josephson junction. This effect is driven entirely by the nonequilibrium conditions, without the need for additional inversion symmetry breaking. Using the standard quasiclassical Keldysh Green's function formalism, we explicitly calculate the diode coefficient from the supercurrent-phase relation of the interferometer. Remarkably, within certain ranges of control parameters, such as applied voltage, temperature, and the geometric aspect ratio of the device, the diode coefficient can exceed its nominal perfect value.

cond-mat.supr-con

Quantum criticality and optical conductivity in a two-valley system

We demonstrate that the optical conductivity of a Fermi liquid (FL) in the absence of umklapp scattering is dramatically affected by the topology of the Fermi surface (FS). Specifically, electron-electron (ee) scattering leads to rapid current relaxation in systems with multiple, or multiply connected, FSs, provided the valleys have different effective masses. This effect results from intervalley drag. We microscopically derive the optical conductivity of a two-valley system, both within the FL regime and near a quantum critical point (QCP) of the Ising-nematic type. In the FL regime, intervalley drag restores the Gurzhi-like scaling of the conductivity, $\mathrm{Re} \sigma(\omega) \sim \omega^0$. This dependence contrasts sharply with the previously identified sub-leading contribution to the conductivity of a two-dimensional FL with a single convex FS, where $\mathrm{Re} \sigma(\omega) \sim \omega^2 \ln |\omega|$. The vanishing of the leading term in the optical conductivity is a signature of geometric constraints on ee scattering channels, which are lifted for a multiply connected FS. A large differential response, $d \mathrm{Re} \sigma/d \mu$ with $\mu$ being the chemical potential, is predicted at the Lifshitz transition from a single-valley to a multi-valley FS, which should be observable within the experimentally accessible frequency range. Near a QCP, intervalley drag leads to a $|\omega|^{-2/3}$ scaling of $\mathrm{Re} \sigma(\omega)$ in 2D, thus providing a specific current-relaxing process for this long-standing conjecture.

cond-mat.str-el

Giant magnetoresistance in weakly disordered non-Galilean invariant conductors

We develop a hydrodynamic description of electron magnetotransport in conductors without Galilean invariance in the presence of a weak long-range disorder potential. We show that magnetoresistance becomes strong (of order 100 %) at relatively small fields, at which the inverse square of the magnetic length becomes comparable to disorder-induced variations of the electron density. The mechanism responsible for this anomalously strong magnetoresistance can be traced to the appearance of magnetic friction force in liquids with nonvanishing intrinsic conductivity. We derive general results for the galvanomagnetic and thermomagnetic kinetic coefficients, and obtain their dependence on the intrinsic dissipative properties of the electron liquid and the correlation function of the disorder potential. We apply this theory to graphene close to charge neutrality and cover the crossover to a high-density regime.

cond-mat.mes-hall

Optical conductivity of a metal near an Ising-nematic quantum critical point

We study the optical conductivity of a pristine two-dimensional electron system near an Ising-nematic quantum critical point. We discuss the relation between the frequency scaling of the conductivity and the shape of the Fermi surface, namely, whether it is isotropic, convex, or concave. We confirm the cancellation of the leading order terms in the optical conductivity for the cases of isotropic and convex Fermi surfaces and show that the remaining contribution scales as $|\omega|^{2/3}$ at $T=0$. On the contrary, the leading term, $\propto |\omega|^{-2/3}$, survives for a concave FS. We also address the frequency dependence of the optical conductivity near the convex-to-concave transition. Explicit calculations are carried out for the Fermi-liquid regime using the modified (but equivalent to the original) version of the Kubo formula, while the quantum-critical regime is accessed by employing the space-time scaling of the $Z=3$ critical theory.

cond-mat.str-el

Anomalous Josephson effect in planar noncentrosymmetric superconducting devices

In two-dimensional electron systems with broken inversion and time-reversal symmetries, a Josephson junction reveals an anomalous response: the supercurrent is nonzero even at zero phase difference between two superconductors. We consider details of this peculiar phenomenon in the planar double-barrier configurations of hybrid circuits, where the noncentrosymmetric normal region is described in terms of the paradigmatic Rashba model of spin-orbit coupling. We analyze this anomalous Josephson effect by means of both the Ginzburg-Landau formalism and the microscopic Green's functions approach in the clean limit. The magnitude of the critical current is calculated for an arbitrary in-plane magnetic field orientation, and anomalous phase shifts in the Josephson current-phase relation are determined in terms of the parameters of the model in several limiting cases.

cond-mat.supr-con

Fluctuation-driven thermal transport in graphene double-layers at charge neutrality

We develop a theory of fluctuation-driven phenomena in thermal transport in graphene double-layers. We work in the regime of electron hydrodynamics and focus on the double charge neutrality point. Although at the neutrality point charge transport is decoupled from the hydrodynamic flow, thermal fluctuations of electron density cause both drag and heat transfer between the layers. The thermal transport in the bilayer system is governed by these two phenomena. We express the drag friction coefficient and the interlayer thermal conductivity in terms of the interlayer distance and the intrinsic conductivity of the electron liquid. We then obtain the thermal conductance matrix and determine the spatial dependence of the hydrodynamic velocity and temperature in the system. For shorter system the thermal drag resistance is determined by drag. In longer systems the situation of perfect thermal drag is realized, in which the hydrodynamic velocities in both layers become equal in the interior of the systems. Estimates are given for the monolayer and bilayer graphene devices. The predictions of our theory can be tested by the high-resolution thermal imaging and Johnson-Nyquist nonlocal noise thermometry.

cond-mat.mes-hall

Hydrodynamic magnetoresistance in graphene Corbino devices

We study hydrodynamic electron magnetotransport in graphene devices. We show that in these systems a distinct mechanism of magnetoresistance appears, which is absent in systems with Galilean-invariant electron liquid. The resulting magnetoresistance depends on the intrinsic conductivity and viscosity of the electron liquid, and becomes especially pronounced near charge neutrality. We obtain analytic expressions for magnetoransport coefficients of Corbino devices, and obtain estimates for the electrical and thermal magnetoresistances for monolayer and bilayer systems at charge neutrality. Magnetoresistance becomes strong (of order 100%) at relatively weak fields, at which the kinetic coefficients of the electron liquid are practically unaffected by the magnetic field.

cond-mat.mes-hall

Nonlocal thermoelectric resistance in vortical viscous transport

The pursuit for clearly identifiable signatures of viscous electron flow in the solid state systems has been a paramount task in the search of the hydrodynamic electron transport behavior. In this work, we investigate theoretically the nonlocal electric and thermal resistances for the generic non-Galilean-invariant electron liquids in the multiterminal Hall-bar devices in the hydrodynamic regime. The role of the device inhomogeneity is carefully addressed in the model of the disorder potential with the long-range correlation radius. We obtain analytic expressions for the thermoelectric resistances that are applicable in the full crossover regime from charge neutrality to high electron density. We show that the vortical component of the electron flow manifests in the thermal transport mode close to the charge neutrality where vorticity is already suppressed by the intrinsic conductivity in the electric current. This behavior can be tested by the high-resolution thermal imaging probes.

cond-mat.mes-hall

Hydrodynamic electron transport in graphene Hall-bar devices

We consider hydrodynamic electron transport in the Hall-bar geometry. The theory is developed for systems with non-Galilean-invariant electron liquids. We show that inhomogeneity of the electron density induced by long-range disorder and gating leads to mixing between the hydrodynamic transport mode and transport relative to the electron liquid. For graphene systems near charge neutrality, these effects lead to strong coupling of the hydrodynamic flow to charge transport. As a result, the effective electrical conductivity of the system may significantly exceed the intrinsic conductivity of the electron liquid. We obtain analytic expressions for the thermoelectric transport coefficients of the system as a function of density in the full crossover region between clean and disorder-dominated regimes.

cond-mat.mes-hall

Hydrodynamic thermoelectric transport in Corbino geometry

We study hydrodynamic electron transport in Corbino graphene devices. Due to the irrotational character of the flow, the forces exerted on the electron liquid are expelled from the bulk. We show that in the absence of Galilean invariance, force expulsion produces qualitatively new features in thermoelectric transport: (i) it results in drops of both voltage and temperature at the system boundaries and (ii) in conductance measurements in pristine systems, the electric field is not expelled from the bulk. We obtain thermoelectric coefficients of the system in the entire crossover region between charge neutrality and high electron density regime. The thermal conductance exhibits a sensitive Lorentzian dependence on the electron density. The width of the Lorentzian is determined by the fluid viscosity. This enables determination of the viscosity of electron liquid near charge neutrality from purely thermal transport measurements. In general, the thermoelectric response is anomalous: it violates the Matthiessen's rule, the Wiedemann-Franz law, and the Mott relation.

cond-mat.mes-hall

Conformal maps of viscous electron flow in the Gurzhi crossover

We investigate the impact of geometric constriction on the viscous flow of electron liquid through quantum point contacts. We provide analysis on the electric potential distribution given the setup of a slit configuration and use the method of conformal mapping to obtain analytical results. The potential profile can be tested and contrasted experimentally with the scanning tunneling potentiometry technique. We discuss intricate physics that underlies the Gurzhi effect, i.e., the enhancement of conductivity in the viscous flow, and compare results for different boundary conditions. In addition, we calculate the temperature dependence of the momentum relaxation time as a result of impurity assisted quasiballistic interference effects and discuss various correlational corrections that lead to the violation of Matthiessen's rule in the hydrodynamic regime. We caution that spatially inhomogeneous profiles of current in the Gurzhi crossover between Ohmic and Stokes flows might also appear in the nonhydrodynamic limit where nonlocality plays an important role. This conclusion is corroborated by calculation of dispersive conductivity in the weakly impure limit.

cond-mat.mes-hall

Imaging the breaking of electrostatic dams in graphene for ballistic and viscous fluids

The flow of charge carriers in materials can, under some circumstances, mimic the flow of viscous fluids. In order to visualize the consequences of such effects, new methodologies must be developed that can probe the quasiparticle flow profile with nm-scale resolution as the geometric parameters of the system are continuously evolved. In this work, scanning tunneling potentiometry (STP) is used to image quasiparticle flow around engineered electrostatic barriers in graphene/hBN heterostructures. Measurements are performed as electrostatic dams - defined by lateral pn-junction barriers - are broken within the graphene sheet, and carriers move through conduction channels with physical widths that vary continuously from pinch-off to um-scale. Local, STP measurements of the electrochemical potential allow for direct characterization of the evolving flow profile, which we compare to finite-element simulations of a Stokesian fluid with varying parameters. Our results reveal distinctly non-Ohmic flow profiles, with charge dipoles forming across barriers due to carrier scattering and accumulation on the upstream side, and depletion downstream. Conductance measurements of individual channels, meanwhile, reveal that at low temperatures the quasiparticle flow is ballistic, but as the temperature is raised there is a Knudsen-to-Gurzhi regime crossover where the fluid becomes viscous and the channel conductance exceeds the ballistic limit set by Sharvin conductance. These results provide a clear illustration of how carrier flow in a Fermi fluid evolves as a function of carrier density, channel width, and temperature. They also demonstrate how STP can be used to extract key parameters of quasiparticle transport, with a spatial resolution that exceeds that of other methods by orders of magnitude.

cond-mat.mes-hall

Hydrodynamic electron transport near charge neutrality

We develop the theory of hydrodynamic electron transport in a long-range disorder potential for conductors in which the underlying electron liquid lacks Galilean invariance. For weak disorder, we express the transport coefficients of the system in terms of the intrinsic kinetic coefficients of the electron liquid and the correlation function of the disorder potential. We apply these results to analyze the doping and temperature dependence of transport coefficients of graphene devices. We show that at charge neutrality, long-range disorder increases the conductivity of the system above the intrinsic value. The enhancement arises from the predominantly vortical hydrodynamic flow caused by local deviations from charge neutrality. Its magnitude is inversely proportional to the shear viscosity of the electron liquid and scales as the square of the disorder correlation radius. This is qualitatively different from the situation away from charge neutrality. In that case, the flow is predominantly potential, and produces negative viscous contributions to the conductivity, which are proportional to the sum of shear and bulk viscosities, and inversely proportional to the square of disorder correlation radius.

cond-mat.mes-hall

Fluctuational Anomalous Hall and Nernst Effects in Superconductors

In this work we develop microscopic kinetic theory of the anomalous Hall and Nernst effects in superconductors induced by fluctuations in the vicinity of the critical transition temperature. The technical analysis is carried out within the Matsubara diagrammatic technique and linear response Kubo formula with disorder averaging and an analytical continuation. It is shown that asymmetric skew-scattering due to spin-orbit interaction gives rise to a new anomalous Hall conductance promoted by Maki-Thompson interference and density of states fluctuational effects. The side-jump mechanism of the anomalous Hall effect is present only in the density of states contributions. The anomalous Nernst effect is found due to a special nonlinear Aslamazov-Larkin term from the quantum-crossing of interacting fluctuations in a Hikami box with the skew-scattering process. In addition to calculations in the weak-coupling BCS model we also sketch an approach for the account of fluctuational transport effects in the strong-coupling limit. In particular we explore an example of how Keldysh version of the Eliashberg theory can in principle be constructed and estimate fluctuation-induced conductivity within conventional electron-phonon coupling scenario. These ideas may pave the way for further developments of strong coupling theories in applications to fluctuations in unconventional superconductors and anomalous transport responses in particular.

cond-mat.supr-con

Temperature Dependence of the Anomalous Hall Effect from Electron Interactions

We consider the impact of electron-electron interactions on the temperature dependence of the anomalous Hall effect in disordered conductors. The microscopic analysis is carried out within the diagrammatic approach of the linear response Kubo-Streda formula with an account of both extrinsic skew-scattering and side-jump mechanisms of the anomalous Hall effect arising in the presence of spin-orbit coupling. We demonstrate the importance of electron interactions in the Cooper channel even for nominally non-superconducting materials and find that the corresponding low-temperature dependence of the anomalous Hall conductivity is asymptotically of the form $\sqrt{T}/\ln(T_0/T)$ in three dimensions and $\ln[\ln(T_0/T)]$ in two dimensions, where the scale of $T_0$ is parametrically of the order of Fermi energy. These results, in particular, may provide an explanation for the recently observed unconventional temperature dependence of the anomalous Hall effect in HgCr$_2$Se$_4$.

cond-mat.mes-hall

Lorentz ratio of a compensated metal

A violation of the Wiedemann-Franz law in a metal can be quantified by comparing the Lorentz ratio, $L=κρ/T$, where $κ$ is the thermal conductivity and $ρ$ is the electrical resistivity, with the universal Sommerfeld constant, $L_0=(π^2/3) (k_B/e)^2$. We obtain the Lorentz ratio of a clean compensated metal with intercarrier interaction as the dominant scattering mechanism by solving exactly the system of coupled integral Boltzmann equations. The Lorentz ratio is shown to assume a particular simple form in the forward-scattering limit: $L/L_0=\overline{Θ^2}/2$, where $Θ$ is the scattering angle. In this limit, $L/L_0$ can be arbitrarily small. We also show how the same result can be obtained without the benefit of an exact solution. We discuss how a strong downward violation of the Wiedemann-Franz law in a type-II Weyl semimetal WP$_2$ can be explained within our model.

cond-mat.str-el

Klein tunneling and magnetoresistance of \textit{p-n} junctions in Weyl semimetals

We study the zero temperature conductance and magnetoconductance of ballistic \textit{p-n} junctions in Weyl semimetals. Electron transport is mediated by Klein tunneling between \textit{n}- and \textit{p}- regions. The chiral anomaly that is realized in Weyl semimetals plays a crucial role in the magnetoconductance of the junction. With the exception of field orientations where the angle between $\mathbf{B}$ and the junction plane is small, magnetoconductance is positive and linear in $B$ at both weak and strong magnetic fields. In contrast, magnetoconductance in conventional \textit{p-n} junctions is always negative.

cond-mat.mes-hall

Spiraling Fermi arcs in Weyl materials

In Weyl materials the valence and conduction electron bands touch at an even number of isolated points in the Brillouin zone. In the vicinity of these points the electron dispersion is linear and may be described by the massless Dirac equation. This results in nontrivial topology of Berry connection curvature. One of its consequences is the existence of peculiar surface electron states whose Fermi surfaces form arcs connecting projections of the Weyl points onto the surface plane. Band bending near the boundary of the crystal also produces surface states. We show that in Weyl materials band bending near the crystal surface gives rise to spiral structure of energy surfaces of arc states. The corresponding Fermi surface has the shape of a spiral that winds about the projection of the Weyl point onto the surface plane. The direction of the winding is determined by the helicity of the Weyl point and the sign of the band bending potential. For close valleys arc state morphology may be understood in terms of avoided crossing of oppositely winding spirals.

cond-mat.mes-hall