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Sonu Prasad Keshri

Publications and source records attributed to Sonu Prasad Keshri.

2 recordsLinked to original sources

Ab initio study of orbital-selective superconductivity in $γ$-BiPd

We investigate the superconducting (SC) properties of experimentally realised $γ$-BiPd by solving the anisotropic Migdal-Eliashberg equations in conjunction with {\it ab initio} relativistic calculations of the electron and phonon band structures as well as electron-phonon coupling (EPC) matrix elements. Our study reveals that $γ$-BiPd possesses a complex Fermi surface (FS), consisting of two electron pockets and one hole pocket, each characterised by distinct atomic orbitals. Our key finding is that the superconductivity in $γ$-BiPd is primarily orbital-selective, arising from Bi $p$-orbitals, and distributed anisotropically on the FS, although contribution from Pd $d$-orbitals, particularly on the hole pocket, is also discernable. While our results show an anisotropic nature of the {\bf k}-dependent SC gap $Δ_{\bf k}$ and EPC strength $λ_{\bf k}$ across the FS, calculated superconducting quasiparticle density of states $N_S$ spectra exhibit a U-shaped gap and $Δ_{\bf k}$ distribution forms a single peak, being consistent with the spin-singlet $s$-wave superconductivity observed in this material. The calculated $T_c$ is $\sim$2.0 K, agreeing in order of magnitude with the experimental value of 3.3 K in $γ$-BiPd thin films. The predicted EPC-enhanced Sommerfeld coefficient $γ_n$ of $0.141$ mJ/K$^2$cm$^3$ is similar to the experimental $γ_n$ value ($0.119$ mJ/K$^2$cm$^3$) of the isoelectronic and isostructural Bi(Pd$_{0.5}$Pt$_{0.5}$) alloy.

cond-mat.supr-con↗

Intrinsically high thermoelectric figure of merit of half-Heusler ZrRuTe

The electronic structure and thermoelectric properties of ZrRuTe-based Half-Heusler compounds are studied using density functional theory (DFT) and Boltzmann transport formalism. Based on rigorous computations of electron relaxation time $τ$ considering electron-phonon interactions and lattice thermal conductivity $κ_l$ considering phonon-phonon interactions, we find ZrRuTe to be an intrinsically good thermoelectric material. It has a high power factor of $\sim 2\times 10^{-3}$ W/m-K$^{2}$ and low $κ_l\sim 10$ W/m-K at 800 K. The thermoelectric figure of merit $ZT \sim 0.13$ at 800 K is higher than similar other compounds. We have also studied the properties of the material as a function of doping and find the thermoelectric properties to be substantially enhanced for $p$-doped ZrRuTe with the $ZT$ value raised to $\sim 0.2$ at this temperature. The electronic, thermodynamic, and transport properties of the material are thoroughly studied and discussed

cond-mat.mtrl-sci↗