SearcharxivSearch

arXiv subjects

Soon-Gil Jung

Publications and source records attributed to Soon-Gil Jung.

18 recordsLinked to original sources

Sub-unit cell engineering of CrVO$_3$ superlattice thin films

Ordered corundum oxides introduce new prospects in the field of functional oxides thin films, complementing the more widely studied class of ABO$_3$ perovskites. In this work, we take advantage of the layer-by-layer growth regime to fabricate epitaxial CrVO$_3$ superlattice thin films with atomic-scale accuracy on the periodic arrangement of Cr and V layers. By means of X-ray diffraction, scanning transmission electron microscopy and Raman spectroscopy, we confirm the thickness control in the sub-unit cell scale, alternating 3, 2 or 1 single atomic layers of Cr$_2$O$_3$ and V$_2$O$_3$. For the first time, we stabilize the ilmenite phase of CrVO$_3$ (space group R-3) and compare the functional properties of the thin film with those calculated by density functional theory. This novel approach to the growth of ordered corundum oxides opens the path towards the stabilization of new complex oxides with tailored properties by varying the composition and the superlattice period, ultimately broadening the family of functional rhombohedral oxides.

cond-mat.mtrl-sci

Effect of C additives with 0.5% in weight on structural, optical and superconducting properties of Ta-Nb-Hf-Zr-Ti high entropy alloy films

We investigated the superconducting (SC) properties of Ta-Nb-Hf-Zr-Ti high-entropy alloy (HEA) thin films with 0.5% weight C additives. The C additives stabilize the structural properties and enhance the SC critical properties, including $\mu_0$Hc$_2$ (13.45 T) and Tc (7.5 K). The reflectance of the C-added HEA film is enhanced in the low-energy region, resulting in a higher optical conductivity, which is consistent with the lower electrical resistivity. In addition, we observed SC vortices in the C-added HEA film using magnetic force microscopy. The magnetic penetration depths ($\lambda$) of the pure HEA and C-added HEA films were estimated from their Meissner force curves by comparing them with those of a reference Nb film. At 4.2 K, the {\lambda} of the C-added film is 360 nm, shorter than that of the pure HEA film (560 nm), indicating stronger superconductivity against an applied magnetic field.

cond-mat.supr-con

Roles of Fe-ion irradiation on MgB$_2$ thin films: Structural, superconducting, and optical properties

The effects of Fe-ion irradiation on the crystal structure and superconducting properties of MgB$_2$ thin films were investigated. Pristine samples were prepared using hybrid physical-chemical vapor deposition (HPCVD), and ion irradiation was performed at three different doses of 5 x 10$^{13}$, 1 x 10$^{14}$, and 2 x 10$^{14}$ ions/cm$^2$. The measured temperature-dependent resistivity showed that as the irradiation dose increased from pristine to most irradiated, the superconducting critical temperature, $T_c$, significantly decreased from 38.33 to 3.02 K. The crystal structures of the films were investigated by X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) measurements. The results showed that the higher the dose, the greater the change in crystal structure, such as the lattice constant and bond length. This suggests that the destruction of the crystal structure at higher doses leads to the degradation of superconductivity in the irradiated MgB$_2$ thin films. Raman spectroscopy showed that the electron-phonon coupling constant decreased with increasing irradiation dose, which was directly related to the reduction of $T_c$ in the samples. The optical conductivity indicates that the charge-carrier density of the $\sigma$-band plays an important role in the superconductivity of ion-irradiated MgB$_2$.

cond-mat.supr-con

Probing superconducting gap in CeH$_9$ under pressure

The recent discovery of superconductivity in hydrogen-rich compounds has garnered significant experimental and theoretical interest because of the record-setting critical temperatures. As the direct observation of the superconducting (SC) gap in these superhydrides is rare, the underlying mechanism behind its occurrence has yet to be settled down. Here, we report a successful synthesis of the $\textit{P6$_3$}$/$\textit{mmc}$ phase of CeH$_9$ that exhibits the SC transition with SC critical temperature of about 100 K at a pressure of about 100 GPa. The observation of the zero electrical resistance and the critical current demonstrates that the SC phase is realized in Ce-based superhydride. Quasiparticle scattering spectroscopy (QSS) reveals the Andreev reflection at zero bias voltage, a hallmark of superconductivity, in the differential conductance. The obtained SC gap-to-$\textit{T}$$_c$ ratio of 4.36 and temperature dependence of SC gap are consistent with the prediction from the Bardeen-Cooper-Schrieffer theory with a moderate coupling strength. The successful realization of QSS under Megabar conditions is expected to provide a desired route to the study of the mechanism of superconductivity as well as the establishment of the SC phase in superhydride high-$\textit{T}$$_c$ systems.

cond-mat.supr-con

Bosonic spectrum of a correlated multiband system, BaFe1.80Co0.20As2, obtained via infrared spectroscopy

We investigated a single crystal BaFe(2-x)CoxAs2 (Co-doped BaFe2As2: Co-doped Ba122) with x = 0.20 using infrared spectroscopy. We obtained the bosonic spectrum from the measured spectrum using an extended Drude-Lorentz model for the normal state and a two-parallel-channel approach for the superconducting (SC) state, based on the generalized Allen formula. The coupling constant, maximum SC transition temperature, SC coherence length, and upper critical field were extracted from the bosonic spectrum. The superfluid plasma frequency and the London penetration depth were obtained from the optical conductivity. We compared the physical quantities of Co-doped Ba122 and K-doped Ba122 and found some interesting differences. Our results may be helpful for understanding superconductivity in doped Ba122 systems and may provide useful information on doped Ba122 systems for their applications.

cond-mat.supr-con

Structural and optical properties of single- and few-layer magnetic semiconductor CrPS4

Atomically thin binary 2-dimensional (2D) semiconductors exhibit diverse physical properties depending on their composition, structure and thickness. By adding another element in those materials, which will lead to formation of ternary 2D materials, the property and structure would greatly change and significantly expanded applications could be explored. In this work, we report structural and optical properties of atomically thin chromium thiophosphate (CrPS4), a ternary antiferromagnetic semiconductor. Its structural details were revealed by X-ray and electron diffractions. Transmission electron microscopy showed that preferentially-cleaved edges are parallel to diagonal Cr atom rows, which readily identified their crystallographic orientations. Strong in-plane optical anisotropy induced birefringence that also enabled efficient determination of crystallographic orientation using polarized microscopy. The lattice vibrations were probed by Raman spectroscopy for the first time and exhibited significant dependence on thickness of crystals exfoliated down to single layer. Optical absorption determined by reflectance contrast was dominated by d-d type transitions localized at Cr3+ ions, which was also responsible for the major photoluminescence peak at 1.31 eV. The spectral features in the absorption and emission spectra exhibited noticeable thickness-dependence and hinted a high photochemical activity for single layer CrPS4. The current structural and optical investigation will provide a firm basis for future study and application of this novel magnetic semiconductor.

cond-mat.mtrl-sci

Artificially Engineered Nanostrain in Iron Chalcogenide Superconductor Thin Film for Enhancing Supercurrent

Although nanoscale deformation, such as nanostrain in iron chalcogenide (FeSexTe1-x, FST) thin films, has attracted attention owing to the enhancement of general superconducting properties, including critical current density (Jc) and critical transition temperature, its formation has proven to be an extremely challenging and complex process thus far. Herein, we successfully fabricated an epitaxial FST thin film with uniformly distributed nanostrain by injection of a trace amount of CeO2 inside FST matrix using sequential pulsed laser deposition. Using transmission electron microscopy and geometrical phase analysis, we verified that a trace amount of CeO2 injection forms nanoscale fine defects with a nanostrained region, which has a tensile strain (ezz ~ 0.02) along the c-axis of the FST matrix. The nanostrained FST thin film achieves a remarkable Jc of 3.5 MA/cm2 for a self-field at 6 K and a highly enhanced Jc under the entire magnetic field with respect to a pristine FST thin film.

cond-mat.supr-con

Influence of carbon-ion irradiation on the superconducting critical properties of MgB$_2$ thin films

We investigate the influence of carbon-ion irradiation on the superconducting critical properties of MgB$_2$ thin films. MgB$_2$ films of two thicknesses viz. 400 nm (MB400nm) and 800 nm (MB800nm) were irradiated by 350 keV C ions having a wide range of fluence, 1 x 10$^{13}$ - 1 x 10$^{15}$ C atoms/cm$^2$. The mean projected range ($R_p$) of 350 keV C ions in MgB$_2$ is 560 nm, thus the energetic C ions will pass through the MB400nm, whereas the ions will remain into the MB800nm. The superconducting transition temperature ($T_c$), upper critical field ($H_{c2}$), $c$-axis lattice parameter, and corrected residual resistivity ($\rho_{corr}$) of both the films showed similar trends with the variation of fluence. However, a disparate behavior in the superconducting phase transition was observed in the MB800nm when the fluence was larger than 1 x 10$^{14}$ C atoms/cm$^2$ because of the different Tcs between the irradiated and non-irradiated parts of the film. Interestingly, the superconducting critical properties, such as $T_c$, $H_{c2}$, and $J_c$, of the irradiated MgB$_2$ films, as well as the lattice parameter, were almost restored to those in the pristine state after a thermal annealing procedure. These results demonstrate that the atomic lattice distortion induced by C-ion irradiation is the main reason for the change in the superconducting properties of MgB$_2$ films.

cond-mat.supr-con

A peak in the critical current for quantum critical superconductors

Generally, studies of the critical current Ic are necessary if superconductors are to be of practical use because Ic sets the current limit below which there is a zero-resistance state. Here, we report a peak in the pressure dependence of the zero-field Ic, Ic(0), at a hidden quantum critical point (QCP), where a continuous antiferromagnetic transition temperature is suppressed by pressure toward 0 K in CeRhIn5 and 4.4% Sn-doped CeRhIn5. The Ic(0)s of these Ce-based compounds under pressure exhibit a universal temperature dependence, underlining that the peak in zero-field Ic(P) is determined predominantly by critical fluctuations associated with the hidden QCP. The dc conductivity is a minimum at the QCP, showing anti-correlation with Ic(0). These discoveries demonstrate that a quantum critical point hidden inside the superconducting phase in strongly correlated materials can be exposed by the zero-field Ic, therefore providing a direct link between a QCP and unconventional superconductivity.

cond-mat.supr-con

Hard magnetic properties in nanoflake van der Waals Fe3GeTe2

Two dimensional (2D) van der Waals (vdW) materials have demonstrated fascinating optical, electrical and thickness-dependent characteristics. These have been explored by numerous authors but reports on magnetic properties and spintronic applications of 2D vdW materials are scarce by comparison. By performing anomalous Hall effect transport measurements, we have characterised the thickness dependent magnetic properties of single crystalline vdW Fe3GeTe2. The nanoflakes of this vdW metallic material exhibit a single hard magnetic phase with a near square-shaped magnetic loop, large coercivity (up to 550 mT at 2 K), a Curie temperature near 200 K and strong perpendicular magnetic anisotropy. Using criticality analysis, we confirmed the existence of magnetic coupling between vdW atomic layers and obtained an estimated coupling length of ~ 5 vdW layers in Fe3GeTe2. Furthermore, the hard magnetic behaviour of Fe3GeTe2 can be well described by a proposed model. The magnetic properties of Fe3GeTe2 highlight its potential for integration into vdW magnetic heterostructures, paving the way for spintronic research and applications based on these devices.

cond-mat.mtrl-sci

Pressure dependence of upper critical fields in FeSe single crystals

We investigate the pressure dependence of the upper critical fields ({\mu}$_0$$H$$_{c2}$) for FeSe single crystals with pressure up to 2.57 GPa. The superconducting (SC) properties show a disparate behavior across a critical pressure where the pressure-induced antiferromagnetic phase coexists with superconductivity. The magnetoresistance for $H//ab$ and $H//c$ is very different: for $H//c$, magnetic field induces and enhances a hump in the resistivity close to the $T_c$ for pressures higher than 1.2 GPa, while it is absent for $H//ab$. Since the measured {\mu}$_0$$H$$_{c2}$ for FeSe samples is smaller than the orbital limited upper critical field ($H$$^{orb}$$_{c2}$) estimated by the Werthamer Helfand and Hohenberg (WHH) model, the Maki parameter ({\alpha}) related to Pauli spin-paramagnetic effects is additionally considered to describe the temperature dependence of {\mu}$_0$$H$$_{c2}$($T$). Interestingly, the {\alpha} value is hardly affected by pressure for $H//ab$, while it strongly increases with pressure for $H//c$. The pressure evolution of the {\mu}$_0$$H$$_{c2}$(0)s for the FeSe single crystals is found to be almost similar to that of $T_c$($P$), suggesting that the pressure-induced magnetic order adversely affects the upper critical fields as well as the SC transition temperature.

cond-mat.supr-con

Enhanced critical current density in the pressure-induced magnetic state of the high-temperature superconductor FeSe

We investigate the relation of the critical current density (Jc) and the remarkably increased superconducting transition temperature (Tc) for the FeSe single crystals under pressures up to 2.43 GPa, where the Tc is increased by ~8 K/GPa. The critical current density corresponding to the free flux flow is monotonically enhanced by pressure which is due to the increase in Tc, whereas the depinning critical current density at which the vortex starts to move is more influenced by the pressure-induced magnetic state compared to the increase of Tc. Unlike other high-Tc superconductors, FeSe is not magnetic, but superconducting at ambient pressure. Above a critical pressure where magnetic state is induced and coexists with superconductivity, the depinning Jc abruptly increases even though the increase of the zero-resistivity Tc is negligible, directly indicating that the flux pinning property compared to the Tc enhancement is a more crucial factor for an achievement of a large Jc. In addition, the sharp increase in Jc in the coexisting superconducting phase of FeSe demonstrates that vortices can be effectively trapped by the competing antiferromagnetic order, even though its antagonistic nature against superconductivity is well documented. These results provide new guidance toward technological applications of high-temperature superconductors.

cond-mat.supr-con

Superconductivity at 7.4 K in Few Layer Graphene by Li-intercalation

Superconductivity in graphene has been highly sought after for its promise in various device applications and for general scientific interest. Ironically, the simple electronic structure of graphene, which is responsible for novel quantum phenomena, hinders the emergence of superconductivity. Theory predicts that doping the surface of the graphene effectively alters the electronic structure, thus promoting propensity towards Cooper pair instability. Here we report the emergence of superconductivity at 7.4 K in Li-intercalated few-layer-graphene (FLG). The absence of superconductivity in three-dimensional Li-doped graphite underlines that superconductivity in Li-FLG arises from the novel electronic properties of the two-dimensional graphene layer. These results are expected to guide future research on graphene-based superconductivity, both in theory and experiments. In addition, easy control of the Li-doping process holds promise for various device applications.

cond-mat.supr-con

Effect of SiC-Impurity Layer and Growth Temperature on MgB2 Superconducting Tapes Fabricated by HPCVD

The influence of SiC-impurity layer and growth temperature on microstructure and superconducting properties were studied for MgB2 superconducting tapes. The pulsed laser deposition (PLD) system was used for the deposition of amorphous SiC-impurity layers on the flexible metallic Cu (001) tapes. The MgB2 superconducting tapes were fabricated by growing MgB2 films on the top of SiC/Cu tapes over a wide temperature range of 460 - 600 {\deg}C by using hybrid physical-chemical vapor deposition (HPCVD) system. Among all tapes, the MgB2/SiC/Cu tape deposited at a temperature of 540 {\deg}C has the highest Tc of ~ 37.7 K. Scanning electron microscopy (SEM) images revealed the hexagonal shaped MgB2 grains with good connectivity, and their sizes were found to vary with growth temperatures. As compared to MgB2/Cu tapes, the MgB2/SiC/Cu tapes exhibited opposite trend in the dependence of critical current density (Jc) with deposition temperatures. The improved Jc (H) behavior could be explained on the basis of the enhanced flux pinning force density (Fp) for MgB2/SiC/Cu tapes upon increasing growth temperature.

cond-mat.supr-con

Fabrication of FeSe1-x superconducting films with bulk properties

We have fabricated high-quality FeSe1-x superconducting films with a bulk Tc of 11-12 K on different substrates, Al2O3(0001), SrTiO3(100), MgO(100), and LaAlO3(100), by using a pulsed laser deposition technique. All the films were grown at a high substrate temperature of 610 oC, and were preferentially oriented along the (101) direction, the latter being to be a key to fabricating of FeSe1-x superconducting thin films with high Tc. According to the energy dispersive spectroscopy data, the Fe:Se composition ratio was 1:0.90+-0.02. The FeSe1-x film grown on a SrTiO3 substrate showed the best quality with a high upper critical magnetic field [Hc2(0)] of 56 T.

cond-mat.supr-con

Potassium-doped BaFe2As2 superconducting thin films with a transition temperature of 40 K

We report the growth of potassium-doped BaFe2As2 thin films, where the major charge carriers are holes, on Al2O3 (0001) and LaAlO3 (001) substrates by using an ex-situ pulsed laser deposition technique. The measured Tc's are 40 and 39 K for the films grown on Al2O3 and LaAlO3, respectively and diamagnetism indicates that the films have good bulk superconducting properties below 36 and 30 K, respectively. The X-ray diffraction patterns for both films indicated a preferred c-axis orientation, regardless of the substrate structures of LaAlO3 and Al2O3. The upper critical field at zero temperature was estimated to be about 155 T.

cond-mat.supr-con

In-situ fabrication of cobalt-doped SrFe2As2 thin films by using pulsed laser deposition with excimer laser

The remarkably high superconducting transition temperature and upper critical field of iron(Fe)-based layered superconductors, despite ferromagnetic material base, open the prospect for superconducting electronics. However, success in superconducting electronics has been limited because of difficulties in fabricating high-quality thin films. We report the growth of high-quality c-axis-oriented cobalt(Co)-doped SrFe2As2 thin films with bulk superconductivity by using an in-situ pulsed laser deposition technique with a 248-nm-wavelength KrF excimer laser and an arsenic(As)-rich phase target. The temperature and field dependences of the magnetization showing strong diamagnetism and transport critical current density with superior Jc-H performance are reported. These results provide necessary information for practical applications of Fe-based superconductors.

cond-mat.supr-con

Influence of Mg Deficiency on the Superconductivity in MgB2 Thin Films Grown by using HPCVD

The effects of Mg deficiency in MgB2 films grown by using hybrid physical-chemical vapor deposition were investigated after vacuum annealing at various temperatures. High-quality MgB2 films grown on c-cut Al2O3 substrates with different superconducting transition temperatures (Tc) of 40.2 and 41 K were used in this study. As the annealing temperature was increased from 200 to 800 C, the Mg contents in the MgB2 films systemically decreased, but the Tc's did not change, within 0.12 K, until the annealing temperature reached 700 C. For MgB2 films annealed at 800 C for 30 min, however, no superconductivity was observed, and the temperature dependence of the resistivity showed a semiconducting behavior. We also found that the residual resistivity ratio decreased with increasing annealing temperature.

cond-mat.supr-con