arXiv subjects

Sophie Beck

Publications and source records attributed to Sophie Beck.

23 records · Page 2Linked to original sources

arXiv2020

On the effect of charge self-consistency in DFT+DMFT calculations for complex transition metal oxides

We investigate the effect of charge self-consistency (CSC) in density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations compared to simpler "one-shot" calculations for materials where interaction effects lead to a strong redistribution of electronic charges between different orbitals or between different sites. We focus on two systems close to a metal-insulator transition, for which the importance of CSC is currently not well understood. Specifically, we analyze the strain-related orbital polarization in the correlated metal CaVO$_3$ and the spontaneous electronic charge disproportionation in the rare-earth nickelate LuNiO$_3$. In both cases, we find that the CSC treatment reduces the charge redistribution compared to cheaper one-shot calculations. However, while the MIT in CaVO$_3$ is only slightly shifted due to the reduced orbital polarization, the effect of the site polarization on the MIT in LuNiO$_3$ is more subtle. Furthermore, we highlight the role of the double-counting correction in CSC calculations containing different inequivalent sites.

cond-mat.str-el↗

arXiv2019

Electronic Localization in CaVO3 Films via Bandwidth Control

Understanding and controlling the electronic structure of thin layers of quantum materials is a crucial first step towards designing heterostructures where new phases and phenomena, including the metal-insulator transition (MIT), emerge. Here, we demonstrate control of the MIT via tuning electronic bandwidth and local site environment through selection of the number of atomic layers deposited. We take CaVO3, a correlated metal in its bulk form that has only a single electron in its V4+ 3d manifold, as a representative example. We find that thick films and ultrathin films (6 unit cells, uc, and below) are metallic and insulating, respectively, while a 10 uc CaVO3 film exhibits a clear thermal MIT. Our combined X-ray absorption spectroscopy and resonant inelastic x-ray scattering (RIXS) study reveals that the thickness-induced MIT is triggered by electronic bandwidth reduction and local moment formation from V3+ ions, that are both a consequence of the thickness confinement. The thermal MIT in our 10 uc CaVO3 film exhibits similar changes in the RIXS response to that of the thickness-induced MIT in terms of reduction of bandwidth and V 3d - O 2p hybridization.

cond-mat.str-el↗

arXiv2019

Charge transfer in LaVO$_3$/LaTiO$_3$ multilayers: strain-controlled dimensionality of interface metallicity between two Mott insulators

We use density functional theory plus dynamical mean-field theory to demonstrate the emergence of a metallic layer at the interface between the two Mott insulators LaTiO$_3$ and LaVO$_3$. The metallic layer is due to charge transfer across the interface, which alters the valence state of the transition metal cations close to the interface. Somewhat counter-intuitively, the charge is transferred from the Ti cations with formal $d^1$ electron configuration to the the V cations with formal $d^2$ configuration, thereby increasing the occupation difference of the $t_{2g}$ states. This can be understood as a result of a gradual transition of the charge transfer energy, or electronegativity, across the interface. The spatial extension of the metallic layer, in particular towards the LaTiO$_3$ side, can be controlled by epitaxial strain, with tensile strain leading to a localization within a thickness of only two unit cells. Our results open up a new route for creating a tunable quasi-two-dimensional electron gas in materials with strong electronic correlations.

cond-mat.str-el↗

arXiv2019

Hund excitations and the efficiency of Mott solar cells

We study the dynamics of photo-induced charge carriers in realistic models of LaVO3 and YTiO3 polar heterostructures. It is shown that two types of impact ionization processes contribute to the carrier multiplication in these strongly correlated multi-orbital systems: The first mechanism involves local spin state transitions, while the second mechanism involves the scattering of high kinetic energy carriers. Both processes act on the 10 fs timescale and play an important role in the harvesting of high energy photons in solar cell applications. As a consequence, the optimal gap size for Mott solar cells is substantially smaller than for semiconductor devices.

cond-mat.str-el↗

arXiv2018

Metal-insulator transition in CaVO$_3$ thin films: interplay between epitaxial strain, dimensional confinement, and surface effects

We use density functional theory plus dynamical mean-field theory (DFT+DMFT) to study multiple control parameters for tuning the metal-insulator transition (MIT) in CaVO$_3$ thin films. We focus on separating the effects resulting from substrate-induced epitaxial strain from those related to the reduced thickness of the film. We show that tensile epitaxial strain of around 3-4% is sufficient to induce a transition to a paramagnetic Mott-insulating phase. This corresponds to the level of strain that could be achieved on a SrTiO$_3$ substrate. Using free-standing slab models, we then demonstrate that reduced film thickness can also cause a MIT in CaVO$_3$, however, only for thicknesses of less than 4 perovskite units. Our calculations indicate that the MIT in such ultra-thin films results mainly from a surface-induced crystal-field splitting between the $t_{2g}$-orbitals, favoring the formation of an orbitally-polarized Mott insulator. This surface-induced crystal-field splitting is of the same type as the one resulting from tensile epitaxial strain, and thus the two effects can also cooperate. Furthermore, our calculations confirm an enhancement of correlation effects at the film surface, resulting in a reduced quasiparticle spectral weight in the outermost layer, whereas bulk-like properties are recovered within only a few layers away from the surface.

cond-mat.str-el↗