arXiv subjects

Sorren Warkander

Publications and source records attributed to Sorren Warkander.

3 recordsLinked to original sources

arXiv2025

Extreme Thermal Insulation in Nano-Bubble Wrap Materials

Achieving ultra-low thermal conductivity under ambient conditions is a fundamental challenge constrained by classical heat transport limits and material design trade-offs. Here, we introduce a new class of nano-bubble wrap architectures that achieve exceptionally low thermal conductivity by integrating nanoscale gas confinement with atomically thin, weakly coupled van der Waals solids. Using scalable patterning of 2D monolayers into periodic nano-bubbles and nano-wrinkles, we construct materials with structural analogies to macroscopic bubble wrap but engineered at length scales much shorter than the mean free path of air and the mean free path of phonons in the atomically thin monolayers. Time-domain thermoreflectance measurements reveal out-of-plane thermal conductivities nearly an order of magnitude lower than that of air and commercial aerogels, reaching critical values below 0.001 W $\cdot$ M$^{-1}$K$^{-1}$ under room temperature and atmospheric pressure. This extreme thermal resistance arises from the combined suppression of gas-phase conduction, phonon transport, and interfacial coupling. Our findings establish nano-bubble wraps as a versatile platform for tuning heat flow in ultrathin materials and open new pathways for designing thermal metamaterials and energy-efficient technologies.

cond-mat.mtrl-sci↗

arXiv2023

Probing carrier and phonon transport in semiconductors all at once through frequency-domain photo-reflectance

Semiconductor devices favor high carrier mobility for reduced Joule heating and high thermal conductivity for rapid heat dissipation. The ability to accurately characterize the motion of charge carriers and heat carriers is necessary to improve the performance of electronic devices. However, the conventional approaches of measuring carrier mobility and thermal conductivity require separate and independent measurement techniques. These techniques often involve invasive probing, such as depositing thin metal films on the sample as Ohmic contacts for characterizing electrical transport or as optical transducers for characterizing thermal transport, which becomes more cumbersome as the geometry of the semiconductor devices becomes small and complicated. Here we demonstrate a non-contact frequency-domain pump-probe method that requires no sample pretreatment to simultaneously probe carrier and phonon transport. We find that the optical reflectance depends on both excess carriers and phonons in response to exposure to a modulated continuous-wave pump laser source. By modeling the ambipolar diffusion of photo-induced excess carriers, energy transfer between electrons and phonons, and phonon diffusion, we are able to extract temperature-dependent electrical and thermal transport coefficients in Si, Ge, SiGe and GaAs. The intrinsically weak perturbation from the continuous-wave pump laser avoids invoking the highly nonequilibrium transport regime that may arise when using a pulsed laser and allows for accurate assessment of electrical transport in actual devices. Our approach provides a convenient and accurate platform for the study of the charge transport and energy dissipation in semiconductors.

cond-mat.mes-hall↗

arXiv2020

Chemical trends of deep levels in van der Waals semiconductors

Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects are well documented, they are experimentally unknown in even the best studied vdW semiconductors, impeding the understanding and utilization of these materials. Here, we directly evaluate deep levels and their chemical trends in the bandgap of MoS2, WS2 and their alloys by transient spectroscopic study. One of the deep levels is found to follow the conduction band minimum of each host, attributed to the native sulfur vacancy. A switchable, DX center - like deep level has also been identified, whose energy lines up instead on a fixed level across different hosts, explaining a persistent photoconductivity above 400K.

cond-mat.mtrl-sci↗