arXiv subjects

Soumi Mondal

Publications and source records attributed to Soumi Mondal.

4 recordsLinked to original sources

arXiv2026

Defect Control via Cu Enrichment Enhances Multifunctional Properties in the Polar Semiconductor Cu1+xMn1-ySiTe3

Polar materials have recently attracted significant interest due to their rich multifunctional properties. The chalcogenide polar semiconductor Cu1-xMn1+ySiTe3 (Cu-deficient) is an emerging multiferroic system in which electric polarization is coupled to magnetization. However, its macroscopic ferroelectric polarization is strongly suppressed due to the presence of a high density of stacking faults. In this work, we demonstrate that these crystal defects, likely originating from non-stoichiometry, can be substantially reduced by increasing the Cu content. Cu-enriched samples, Cu1+xMn1-ySiTe3, crystallize in a noncentrosymmetric monoclinic structure (space group Pm) as the Cu-deficient counterpart but show a nearly stacking-fault-free phase, which is attributed to the emergence of an interstitial site. Consequently, the Cu-enriched samples show a pronounced enhancement of the second-harmonic generation (SHG) response compared to Cu-deficient compositions. Magnetically, the Cu-enriched crystals retain long-range antiferromagnetic order with a Neel temperature of TN ~ 33 K without a glassy state but manifest a distinct spin-flop transition along the polar b-axis that is absent in the Cu-deficient compositions. Furthermore, the electronic ground state evolves from insulating to doped semiconducting behavior upon Cu enrichment. Together, these results establish this material system as a unique and versatile platform for elucidating the interplay among composition, crystal defects, and multifunctional properties, offering a route to design magnetic polar systems with tunable quantum functionalities.

cond-mat.mtrl-sci↗

arXiv2026

Coexistence of ferromagnetism and ferroelectricity in the van der Waals multiferroic CuIn0.2V0.8P2S6

Two-dimensional (2D) van der Waals (vdW) multiferroics have emerged as a promising platform for next-generation multifunctional devices. Although recent studies have demonstrated that artificial heterostructures can combine dual ferroic orders and exhibit strong magnetoelectric coupling, their performance is sometimes limited by poor interface quality and inadequate long-term stability. By contrast, the realization of intrinsic single-phase materials with coexisting ferromagnetism and ferroelectricity remains a longstanding challenge in the field. Here we report the realization of a single-phase 2D vdW multiferroic system, CuIn0.2V0.8P2S6, which exhibits both ferromagnetism and room-temperature ferroelectricity. The intrinsic ferroelectric nature of CuIn0.2V0.8P2S6 was probed using ferroelectric tunnel junctions, which exhibit a large tunneling electroresistance with an ON/OFF ratio of 107 at 295 K. CuIn0.2V0.8P2S6 develops ferromagnetic ordering with the Curie temperature (TC) of 14.6 K, as evidenced by pronounced magnetic hysteresis and a relatively large remanent magnetization. Notably, the appearance of a magnetodielectric response below TC is consistent with the anticipated interplay between the ferromagnetic and ferroelectric orders. These results highlight a promising route toward single-phase van der Waals multiferroics with coexisting ferroic orders.

cond-mat.mtrl-sci↗

arXiv2026

Interfering trajectories in a ballistic Andreev cavity

The conventional description of transport through the interface between a normal conductor and a superconductor reduces the system to a one-dimensional problem treating Andreev reflection based on a zero-dimensional Sharvin type point-contact model, and effectively neglects all considerations of device geometry. While this has been successful in systems where conductance in the normal material is in the diffusive transport regime, such an over-simplification of the problem fails in other transport regimes. In particular, when transport is ballistic as in a typical semiconductor-superconductor hybrid structure, geometrical effects are inherently important, and a proper description must consider a one-dimension contact injecting into a two-dimensional ballistic cavity. We present the first study of this regime and explore the bias-voltage dependence of Andreev transport in a cavity-type device comprised of a high mobility HgTe quantum well side-contacted by one superconducting and one normal contact, each creating a one-dimensional interface. The enhanced conductance from Andreev transport features two finite bias conductance peaks, observed at energies within the energy gap of the superconductor. Interestingly, these two peaks respond differently to the application of a perpendicular-to-plane magnetic field. Using a semi-classical model for the quantum transport within the cavity, we are able to attribute each peak to a different class of ballistic trajectories. One class is dominated by normal reflection, and its interference condition is independent of magnetic field, whereas the other one contains retro-reflected Andreev processes at the superconductor interface. These create closed trajectories that are strongly suppressed by magnetic field due to Aharonov-Bohm and Doppler shift effects.

cond-mat.mes-hall↗

arXiv2026

Successful growth of low carrier density $α$-In$_2$Se$_3$ single crystals using Se-flux in a modified Bridgman furnace

Indium selenide (In$_2$Se$_3$) has garnered significant attention for its intriguing properties and applications in batteries, solar cells, photodetectors and ferroelectric devices. However, the controlled synthesis of single phase $α$-In$_2$Se$_3$ remains challenging owing to its complex phase diagram, presence of multiple polymorphs and the high volatility of selenium that induces non-stoichiometry and unintentional carrier doping. For ferroelectric α-In2Se3, minimizing the carrier density is essential because leakage current can obscure polarization switching. Here, we report the growth of $α$-In$_2$Se$_3$ single crystals using a unique approach, the Se-flux assisted modified vertical Bridgman technique combined with liquid encapsulation under high pressure. This approach creates a high-pressure, Se-rich environment that effectively minimizes Se-vaporization. Structural and compositional analysis using X-ray diffraction, transmission electron microscopy and energy-dispersive X-ray spectroscopy confirm the formation of pure $α$-In$_2$Se$_3$ single crystals with 3R stacking. Furthermore, the crystals exhibit remarkably low carrier density of 1.5-3.2 $\times$ 10$^{16}$ cm$^{-3}$ at 300K$-$the lowest reported to date, reflecting a significant suppression of Se-vacancies relative to the conventional Bridgman or melt-grown crystals. Through transport and ARPES measurements on different batches of crystals, we also demonstrate that the amount of Se-flux plays a crucial role in controlling Se-vacancies. Our results thus establish this modified Bridgman method as an effective strategy for synthesizing large $α$-In$_2$Se$_3$ single crystals with reduced intrinsic defects. This technique can be broadly applied to grow other volatile chalcogenides with reduced defects and controlled stoichiometry.

cond-mat.mtrl-sci↗