arXiv subjects

Souvik Sasmal

Publications and source records attributed to Souvik Sasmal.

15 recordsLinked to original sources

arXiv2026

Visualization of Tunable Electronic Structure of Monolayer TaIrTe$_4$

Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric screening tunable topological phases such as quantum spin Hall insulator (QSHI), trivial insulator, higher-order topological insulator, and metallic phase, in the ground state of monolayer TaIrTe$_4$. Moreover, charge dosing has been demonstrated to convert the QSHI into a dual QSHI state. Although the band structure of monolayer TaIrTe$_4$ is central to interpreting its topological phases in transport experiments, direct experimental access to its intrinsic electronic structure has so far remained elusive. Here we report direct measurements of the monolayer TaIrTe$_4$ band structure using spatially resolved micro-angle-resolved photoemission spectroscopy (microARPES) with micrometre-scale resolution. The observed dispersions show quantitative agreement with density functional theory calculations using the Heyd-Scuseria-Ernzerhof hybrid functional, establishing the insulating ground state and revealing no evidence for strong electronic correlations. We further uncover a pronounced electron-hole asymmetry in the doping response. Whereas hole doping is readily induced by electrostatic gating, attempts to introduce electrons via gating or alkali metal deposition do not yield a rigid upward shift of the Fermi level. Fractional charge calculations demonstrate that added electrons instead drive band renormalization and shrink the band gap. Taken together, our experimental and theoretical results identify the microscopic mechanism by which induced charges reshape the band topology of monolayer TaIrTe$_4$, showing that doping can fundamentally alter the electronic structure beyond the rigid band behaviour that is typically assumed.

cond-mat.str-el↗

arXiv2025

Cavity based sensing of antiferromagnetic canting and nonzero-momentum spin waves in a van der Waals cavity-magnon-polariton system

Cavity-magnon-polaritons are hybrid excitations from the interaction between cavity photons and magnons, the quanta of collective spin oscillations. Along with the tunability of the magnon-photon coupling strength, fast information transfer and conversion speed are desired in hybrid devices. This can be achieved utilizing the propagating nature of spin waves with non-zero momentum for their ultra-fast time dynamics and reduced ohmic dissipation. Antiferromagnets are particularly interesting as hosts for magnons since stray-field interactions are minimized, and they support multiple modes with distinctive magnetic-field behavior across the phase diagram. CrCl3 is a van der Waals antiferromagnet having a strong easy-plane anisotropy and a weak in-plane easy-axis anisotropy. Despite some magnetic resonance studies, the impact of magnetic reorientation of spins in CrCl3 on cavity-magnon-polariton interaction strength as a function of magnetic field remains largely unexplored. In this study, we investigate the coupling between magnons in CrCl3 and photons in a coplanar waveguide resonator as a function of magnetic field. In particular, we find that the magnon-photon coupling strength varies nonmonotonically and distinctly with the magnetic field for both acoustic and optical magnons, enabling tuning of the coupling strength with an external magnetic field as a knob. We find the signature of spin-flop transition in two harmonics of the cavity due to a stronger dispersive coupling between optical magnons and cavity photons at lower fields. Additionally, we find standing modes formed by spin waves with nonzero momentum associated with the two hybrid magnons when the external field is applied at an angle with the crystal plane. These modes do not undergo substantial coupling with the cavity mode unlike the antiferromagnetic modes and can be used as low-loss propagation channels in hybrid devices.

cond-mat.mes-hall↗

arXiv2025

Direct visualization of gate-tunable flat bands in twisted double bilayer graphene

The symmetry-broken correlated states in twisted double bilayer graphene (TDBG) can be tuned via several external knobs, including twist angle, displacement field, and carrier density. However, a direct, momentum-resolved characterization of how these parameters reshape the flat-band structure remains limited. In this study, we employ micro focused angle-resolved photoemission spectroscopy to investigate the flat-band dispersion of TDBG at a twist angle of 1.6, systematically varying the displacement field and carrier density via electrostatic gating. We directly observe multiple flat moir'e minibands near charge neutrality, including a flat remote valence band residing below the low-energy flat-band manifold. Furthermore, the dominant Coulomb repulsive energy over the flat- band bandwidth suggests favorable conditions for the emergence of interaction-driven correlated phenomena in TDBG. These findings establish that the formation and evolution of flat bands in TDBG arises from the interplay between the electron filling and the displacement field.

cond-mat.mes-hall↗

arXiv2025

Magnetization Dependent In-plane Anomalous Hall Effect in a Low-dimensional System

Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetries, which demands that the magnetization, applied electric field, and induced Hall current are mutually orthogonal to each other. Here, we report experimental realization of an unconventional form of AHE in a low-dimensional heterostructure, wherein the Hall response is not only proportional to the out-of-plane magnetization component but also to the in-plane magnetization component. By interfacing a low-symmetry topological semimetal (TaIrTe4) with the ferromagnetic insulator (Cr2Ge2Te6), we create a low-dimensional magnetic system, where only one mirror symmetry is preserved. We show that as long as the magnetization has a finite component in the mirror plane, this last mirror symmetry is broken, allowing the emergence of an AHE signal proportional to in-plane magnetization. Our experiments, conducted on multiple devices, reveal a gate-voltage-dependent AHE response, suggesting that the underlying mechanisms responsible for the Hall effect in our system can be tuned via electrostatic gating. A minimal microscopic model constrained by the symmetry of the heterostructure shows that both interfacial spin-orbit coupling and time-reversal symmetry breaking via the exchange interaction from magnetization are responsible for the emergence of the in-plane AHE. Our work highlights the importance of system symmetries and exchange interaction in low-dimensional heterostructures for designing novel and tunable Hall effects in layered quantum systems.

cond-mat.mes-hall↗

arXiv2024

Revealing the EuCd_{2}As_{2} Semiconducting Band Gap via n-type La-Doping

EuCd_{2}As_{2} has attracted considerable interest as one of the few magnetic Weyl semimetal candidate materials, although recently there have been emerging reports that claim it to have a semiconducting electronic structure. To resolve this debate, we established the growth of n-type EuCd_{2}As_{2} crystals, to directly visualize the nature of the conduction band using angle resolve photoemission spectroscopy (ARPES). We show that La-doping leads to n-type transport signatures in both the thermopower and Hall effect measurements, in crystals with doping levels at 2 - 6 x 10^{17} e^{-} cm^{-3}. Both p-type and n-type doped samples exhibit antiferromagnetic ordering at 9 K. ARPES experiments at 6 K clearly show the presence of the conduction band minimum at 0.8 eV above the valence band maximum, which is further corroborated by the observation of a 0.71 - 0.72 eV band gap in room temperature diffuse reflectance absorbance measurements. Together these findings unambiguously show that EuCd_{2}As_{2} is indeed a semiconductor with a substantial band gap and not a topological semimetal.

cond-mat.mtrl-sci↗

arXiv2023

Valence fluctuation in Ce$_2$Re$_3$Si$_5$ and Ising-type magnetic ordering in Pr$_2$Re$_3$Si$_5$ single crystals

Single crystals of ${\rm Ce_2Re_3Si_5}$ and ${\rm Pr_2Re_3Si_5}$ have been grown by Czochralski method in a tetra-arc furnace. Powder x-ray diffraction confirmed that these compounds crystallize in the ${\rm U_2Mn_3Si_5}$-type tetragonal crystal structure with space group $P4/mnc$ (No. 128). The anisotropic physical properties have been studied comprehensively by measuring the magnetic susceptibility, isothermal magnetization, electrical transport and specific heat. The low value of magnetic susceptibility together with no magnetic transition down to $2$~K gives evidence that the Ce-ions are in the intermediate valence state in ${\rm Ce_2Re_3Si_5}$. On the other hand ${\rm Pr_2Re_3Si_5}$ revealed a magnetic ordering at $9$~K. The sharp drop in the magnetic susceptibility and a spin flip like metamagnetic transition, for $H~\parallel~[001]$ in the magnetization plot of ${\rm Pr_2Re_3Si_5}$ suggest an Ising-type antiferromagnetic ordering. Based on magnetic susceptibility and isothermal magnetization data, a detailed crystal electric field (CEF) analysis shows that degenerate ${J} = 4$ Hund's rule derived ground state of ${\rm Pr^{3+}}$ ion splits into nine singlets with an overall splitting of $1179$~K. The magnetic ordering in ${\rm Pr_2Re_3Si_5}$ is due to the exchange-generated admixture of the lowest lying CEF energy levels. Heat capacity data reveal a sharp peak at $9$~K, that confirms the bulk nature of the magnetic ordering in ${\rm Pr_2Re_3Si_5}$.

cond-mat.str-el↗

arXiv2023

A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$

Chalcopyrite compounds are extensively explored for their exotic topological phases and associated phenomena in a variety of experiments. Here, we discuss the electrical transport properties of a direct energy gap semiconductor CdGeAs$_{2}$. The observed transverse magnetoresistance (MR) is found to be around 136% at a temperature of 1.8 K and a magnetic field of 14 T, following the semiclassical exponent MR $\sim$ $B^{2.18}$. The MR analysis exhibits a violation of the Kohler rule, suggesting the involvement of multiple carriers in the system. Below 15 K, with decreasing magnetic field, the MR increases, leading to the well known quantum interference phenomenon weak localization (WL). The analysis of the magnetoconductivity data based on the Hikami-Larkin-Nagaoka (HLN) model unveils three dimensional nature of the WL and the weak spin-orbit coupling in CdGeAs$_{2}$. The phase coherence length follows the $L_ϕ$ $\sim$ $T^{-0.66}$ power law, which exhibits the 3D nature of the observed WL feature.

cond-mat.str-el↗

arXiv2022

Behavior of gapped and ungapped Dirac cones in an antiferromagnetic topological metal, SmBi

We studied the behavior of nontrivial Dirac fermion states in an antiferromagnetic metal SmBi using angle-resolved photoemission spectroscopy (ARPES). The experimental results exhibit multiple Fermi pockets around $\overlineΓ$ and $\overline{M}$ points along with a band inversion in the spectrum along the $\overlineΓ$-$\overline{M}$ line consistent with the density functional theory results. In addition, ARPES data reveal Dirac cones at $\overlineΓ$ and $\overline{M}$ points within the energy gap of the bulk bands. The Dirac cone at $\overline{M}$ exhibit a distinct Dirac point and is intense in the high photon energy data while the Dirac cone at $\overlineΓ$ is intense at low photon energies. Employing ultra-high-resolution ARPES, we discover destruction of a Fermi surface constituted by the surface states across the Neél temperature of 9 K. Interestingly, the Dirac cone at $\overlineΓ$ is found to be gapped at 15 K and the behavior remains similar across the magnetic transition. These results reveal complex momentum dependent gap formation and fermi surface destruction across magnetic transition in an exotic correlated topological material; the interplay between magnetism and topology in this system calls for ideas beyond existing theoretical models.

cond-mat.str-el↗

arXiv2022

Analysis of the unconventional chiral fermions in a non-centrosymmetric chiral crystal $\textbf {PtAl}$

Symmetry-protected non-trivial states in chiral topological materials hold immense potential for fundamental science and technological advances. Here, we report electrical transport, quantum oscillations, and electronic structure results of a single crystal of chiral quantum material $\rm PtAl$. Based on the de Haas-van Alphen (dHvA) oscillations, we show that the smallest Fermi pocket ($α$) possesses a non-trivial Berry phase $1.16$$π$. The band associated with this Fermi pocket carries a linear energy dispersion over a substantial energy window of $\sim$700 meV that is further consistent with the calculated optical conductivity. First-principles calculations unfold that $\rm PtAl$ is a higher-fold chiral fermion semimetal where structural chirality drives the chiral fermions to lie at the high-symmetry $Γ$ and $R$ points of the cubic Brillouin zone. In the absence of spin-orbit coupling, the band crossings at $Γ$ and $\rm R$ points are three- and four-fold degenerate with a chiral charge of $-2$ and $+2$, respectively. The inclusion of spin-orbit coupling transforms these crossing points into four- and six-fold degenerate points with a chiral charge of $-4$ and $+4$. Nontrivial surface states on the $(001)$ plane connect the bulk projected chiral points through the long helical Fermi arcs that spread over the entire Brillouin zone.

cond-mat.str-el↗

arXiv2022

Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal

Anisotropic transport, Shubnikov-de Haas (SdH), and de Haas-van Alphen (dHvA) quantum oscillations studies are reported on a high-quality CoSi single crystal grown by the Czochralski method. Temperature-dependent resistivities indicate the dominating electron-electron scattering. Magnetoresistance (MR) at 2 K reaches 610% for I||[111] and B||[01-1], whereas it is 500% for I||[01-1] and B||[111]. A negative slope in field-dependent Hall resistivity suggests electrons are the majority carriers. The carrier concentration extracted from Hall conductivity indicates no electron-hole compensation. In 3D CoSi, the electron transport lifetime is found to be approximately in the same order as quantum lifetime, whereas in 2D electron gas the long-range scattering drives the transport life much larger than the quantum lifetime. From linear and Hall SdH oscillations the effective masses and Dingle temperatures have been calculated. The dHvA oscillation reveals three frequencies at 18 ($γ$), 558 ($α$) and 663 T ($β$)), whereas, SdH oscillation results in only two frequencies $α$ and $β$. The $γ$ frequency observed in dHvA oscillation is a tiny hole pocket at the $Γ$ point.

cond-mat.mtrl-sci↗

arXiv2021

Antiferromagnetism and large magnetoresistance in GdBi single crystal

Single crystal of the binary equi-atomic compound GdBi crystallizing in the rock salt type cubic crystal structure with the space group $Fm\bar{3}m$ has been grown by flux method. The electrical and magnetic measurements have been performed on well oriented single crystals. The antiferromagnetic ordering of the Gd moments is confirmed at $T_{\rm N} = 27.5$~K. The magnetization measurement performed at $2$~K along the principal crystallographic direction [100] did not show any metamagnetic transition and no sign of saturation up to $7$~T. Zero field electrical resistivity reveals a sharp drop at $27.5$~K suggesting a reduction in the spin disorder scattering due to the antiferromagnetic alignment of the Gd moments. The residual resistivity at $2$~K is 390~n$Ω$cm suggesting a good quality of the grown crystal. The magneto resistance attains a value of $1.0~\times~10^{4}\%$ with no sign of saturation, in a field of $14$~T, at $T = 2$~K. Shubnikov de Hass (SdH) oscillations have been observed in the high field range of the magnetoresistance with five different frequencies corresponding to the extremal areas of the Fermi surface. Analysis of the Hall data revealed a near compensation of the charge carriers accounting for the extremely large magnetoresistance.

cond-mat.str-el↗

arXiv2021

Weak antilocalization and Shubnikov-de Haas oscillations in CaCuSb single crystal

Quantum oscillations in both linear and Hall resistivities and weak antilocalization (WAL) are barely observed in bulk single crystals. Here we report the transport properties of a CaCuSb single crystal that crystallizes in the hexagonal crystal structure. The magnetotransport studies reveal WAL and Shubnikov-de Haas (SdH) quantum oscillations with a unique frequency at 314 T. A cusp-like behavior in the low field regime of magnetotransport for J // (ab)-plane and B // [0001] confirms the WAL in CaCuSb. Angular-dependent normalized magnetoconductance and SdH oscillations studies reveal that the observed phenomena originate from the 2D transport channels. The high magnetic field (up to 45 T) experiments demonstrate plateau-like features in the Hall measurements. The first-principles calculations unfold that CaCuSb is a non-topological semimetal with dominant hole carries at the Fermi level. Our study reveals that CaCuSb is a promising candidate to explore the quasi-2D quantum transport phenomenon in the transition metal pnictide materials.

cond-mat.str-el↗

arXiv2021

Linear unsaturated magnetoresistance in YSi single crystal

Linear magnetoresistance is a phenomenon that has been observed in a few topological compounds that originate from classical and quantum phenomena. Here, we performed electrical transport measurements, in zero and applied magnetic fields, on the YSi single crystal along all three principal crystallographic directions of the orthorhombic crystal structure. For $I~\parallel~[001]$ and $H~\parallel~[100]$ direction above $\approx 10$~T, mobility fluctuation driven linear magnetoresistance is observed without any sign of saturation up to $14$~T magnetic field. Anisotropy in the Fermi surface is immanent from the angular dependence of the magnetoresistance. Kohler rule violation is observed in this system and Hall data signifies multiple charge carriers in YSi.

cond-mat.str-el↗

arXiv2021

Fermi surface studies of a non-trivial topological compound YSi

The Fermi surface properties of a nontrivial system YSi is investigated by de Haas-van Alphen (dHvA) oscillation measurements combined with the first-principle calculations. Three main frequencies ($α$, $β$, $γ$) are probed up to $14$~T magnetic field in dHvA oscillations. The $α$-branch corresponding to $21$~T frequency possesses non-trivial topological character with $π$ Berry phase and a linear dispersion along $Γ$ to $Z$ direction with a small effective mass of $0.069~m_e$ with second-lowest Landau-level up to $14$~T. For $B~\parallel$~[010] direction, the 295~T frequency exhibits non-trivial $2D$ character with $1.24π$ Berry phase and a high Fermi velocity of $6.7 \times 10^5$~ms$^{-1}$. The band structure calculations reveal multiple nodal crossings in the vicinity of Fermi energy $E_f$ without spin-orbit coupling (SOC). Inclusion of SOC opens a small gap in the nodal crossings and results in nonsymmorphic symmetry enforced Dirac points at some high symmetry points, suggesting YSi to be a symmetry enforced topological metal.

cond-mat.str-el↗

arXiv2019

Weak antilocalization in a noncentrosymmetric CaAgBi single crystal

We report on the single crystal growth and transport properties of a topological semimetal CaAgBi which crystallises in the hexagonal $ABC-$type structure with the non-centrosymmetric space group $\mathit{P6_3mc}$ (No. 186). The transverse magnetoresistance measurements with current in the basal plane of the hexagonal crystal structure reveal a value of about 30 % for I // [10-10] direction and about 50 % for I // [1-210] direction at 10 K in an applied magnetic field of 14 T. The magnetoresistance shows a cusp-like behavior in the low magnetic-field region, suggesting the presence of weak antilocalization effect for temperatures less than 100 K. The Hall measurements reveal that predominant charge carriers are $p$ type exhibiting a linear behavior for fields up to 14 T and can be explained based on the single band model. The magnetoconductance of CaAgBi is analysed based on the modified Hikami-Larkin-Nagaoka (HLN) model. Our first-principles calculations within a density-functional theory framework reveal that CaAgBi supports a topological Dirac semimetal state with Dirac points located on the rotational axis slightly above the Fermi level and are protected by $C_{6v}$ point-group symmetry. The Fermi surface consists of both the electron and hole pockets. However, the size of hole pockets is much larger than electron pockets suggesting the dominant $p$ type carriers in accord with our experimental results.

cond-mat.mtrl-sci↗