arXiv subjects

Spyros Diplas

Publications and source records attributed to Spyros Diplas.

6 recordsLinked to original sources

arXiv2026

Tailoring the material properties, nanostructure and grain alignment of Alnico magnets through micromagnetic simulations

Alnico magnets have gained renewed interest in the search for rare-earth free permanent magnets due to their high thermal stability and magnetisation. However, the limited coercivity of these shape-anisotropy-based alloys constrains their performance. Starting from a reference Alnico sample, we realised a finite elements micromagnetic study of exchange-decoupled rods by varying their dimensions and interrod spacing across those observed experimentally. We computed the hysteresis properties by progressing from micromagnetic simulations of a small number of rods within the magnetostatic field of their neighbours to large systems treated statistically based on the distribution of orientations of the grains. We compared the coercivity of an isolated rod with that of the exchange-decoupled system to highlight the effect of magnetostatic interactions. We computed analytically the stray field acting on a single rod as a consequence of its surrounding rods in order to confirm the scaling of the coercivity with the packing fraction p. We explored how intrinsic material properties influence magnetic behaviour by examining materials with different magnetocrystalline anisotropy constants and saturation polarisation values. Results from several hundred simulations were used to train a multi-layer perceptron regressor and predict the magnetic properties as function of the dimensions of the rods, interrod spacing and orientation of the grains. With this approach, we highlight the underlying trends by which nanoscale structuring, intrinsic material properties and grain alignment can be tailored to improve the magnetic properties of Alnico alloys.

cond-mat.mtrl-sci↗

arXiv2018

Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study

Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission electron microscopy and secondary-ion mass spectrometry are used to investigate precipitation mechanisms in B-implanted 3C-SiC as a function of temperature. Point-defect clustering was detected after annealing at 1273 K, while stacking faults, B-rich precipitates and dislocation networks developed in the 1573 - 1773 K range. The precipitates adopted the rhombohedral B13C2 structure and trapped B up to 1773 K. Above this temperature, higher solubility reduced precipitation and free B diffused out of the implantation layer. Dopant concentrations E19 at.cm-3 were achieved at 1873 K.

cond-mat.mtrl-sci↗

arXiv2012

An experimental study of charge distribution in crystalline and amorphous Si nanoclusters in thin silica films

Crystalline and amorphous nanoparticles of silicon in thin silica layers were examined by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and x-ray photoelectron spectroscopy (XPS). We used XPS data in the form of the Auger parameter to separate initial and final state contributions to the Si$_{2p}$ energy shift. The electrostatic charging and electron screening issues as well as initial state effects were also addressed. We show that the chemical shift in the nanocrystals is determined by initial state rather than final state effects, and that the electron screening of silicon core holes in nanocrystals dispersed in SiO$_2$ is inferior to that in pure bulk Si.

cond-mat.mtrl-sci↗

arXiv2012

The formation of Er-oxide nanoclusters in SiO$_2$ thin films with excess Si

The nucleation, distribution and composition of erbium embedded in a SiO$_2$-Si layer were studied with High Resolution Transmission Electron Microscopy (HRTEM), Electron Energy Loss Spectroscopy (EELS), Energy Filtered TEM (EFTEM), Scanning Transmission Electron Microscopy (STEM) and X-ray Photoelectron Spectroscopy (XPS). When the SiO$_2$ layer contains small amounts of Si and Er, nanoclusters of Er-oxide are formed throughout the whole layer. Exposure of the oxide to an electron beam with 1.56*10$^6$ electrons/nm$^2$/sec. causes nanocluster growth. Initially this growth matches the Ostwald ripening model, but eventually it stagnates at a constant nanocluster radius of 2.39 nm.

cond-mat.mtrl-sci↗

arXiv2012

Composition and structure of Pd nanoclusters in SiO$_x$ thin film

The nucleation, distribution, composition and structure of Pd nanocrystals in SiO$_2$ multilayers containing Ge, Si, and Pd are studied using High Resolution Transmission Electron Microscopy (HRTEM) and X-ray Photoelectron Spectroscopy (XPS), before and after heat treatment. The Pd nanocrystals in the as deposited sample seem to be capped by a layer of PdO$_x$. A 1-2 eV shift in binding energy was found for the Pd-3d XPS peak, due to initial state Pd to O charge transfer in this layer. The heat treatment results in a decomposition of PdO and Pd into pure Pd nanocrystals and SiO$_2$.

cond-mat.mtrl-sci↗

arXiv2012

Elemental distribution and oxygen deficiency of magnetron sputtered ITO films

The atomic structure and composition of non-interfacial ITO and ITO-Si interfaces were studied with Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). The films were deposited by DC magnetron sputtering on mono-crystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated composition. A thin layer of SiO$_x$ was found at the ITO/Si interface together with In and Sn nanoclusters, as well as highly oxygen deficient regions, as observed by XPS. High energy electron exposure of this area crystallized the In nanoclusters and at the same time increased the SiO$_x$ interface layer thickness.

cond-mat.mtrl-sci↗