arXiv subjects

Srabanti Chowdhury

Publications and source records attributed to Srabanti Chowdhury.

6 recordsLinked to original sources

arXiv2026

Diamond Diode for Extreme Venus Environments

A diamond Schottky PIN diode (SPIND) with the highest reported current density to date of ~116 kA/cm2 is demonstrated carrying a total current of ~1.3 A through a 50 micron wide pseudo-vertical diode structure. The diamond SPIND also provides a maximum power handling capacity of 1.85 MW/cm2 and a low specific on-resistance Ron,S of 0.05 mOhm-cm2 at a forward bias of ~16 V. The diamond SPIN diode also shows excellent rectification characteristics with a current on-off ratio of ~6e12. An analytical model including thermionic emission and space charge limited current is presented together with Silvaco ATLAS TCAD simulations, to accurately reproduce the experimental J-V characteristics using multiple single trap levels and other physical models emulating a real device. Theoretical analysis from the analytical models in conjunction with ATLAS simulations shows that further improvement in the device turn on voltage and Ron,S can be achieved by reducing the defect density and contact resistance in order to approach the ultimate performance in the Mott-Gurney space charge limited current regime

cond-mat.mtrl-sci↗

arXiv2025

Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors

For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used to maximize the amount of charge that can be induced and thereby the current that can be achieved. However, the Schottky-gate also leads to very high leakage current through the gate electrode. Adding a conventional dielectric layer between the nitride layers and gate metal can reduce leakage; but this comes at the price of a reduced drain current. Here, we used a ferroic HfO2-ZrO2 bilayer as the gate dielectric and achieved a simultaneous increase in the ON current and decrease in the leakage current, a combination otherwise not attainable with conventional dielectrics. This approach surpasses the conventional limits of Schottky GaN transistors and provides a new pathway to improve performance in transistors based on 2DEG.

cond-mat.mtrl-sci↗

arXiv2025

Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications

This paper introduces a robust Pareto design approach for transistor sizing of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), particularly for power amplifier (PA) and low-noise amplifier (LNA) designs in 5G applications. We consider five key design variables and two settings (PAs and LNAs) where we have multiple objectives. We assess designs based on three critical objectives, evaluating each by its worst-case performance across a range of Gate-Source Voltages ($V_{\text{GS}}$). We conduct simulations across a range of $V_{\text{GS}}$ values to ensure a thorough and robust analysis. For PAs, the optimization goals are to maximize the worst-case modulated average output power ($P_{\text{out,avg}}$) and power-added efficiency ($\text{PAE}_{\text{avg}}$) while minimizing the worst-case average junction temperature ($T_{\text{j,avg}}$) under a modulated 64-QAM signal stimulus. In contrast, for LNAs, the focus is on maximizing the worst-case maximum oscillation frequency ($f_{\text{max}}$) and Gain, and minimizing the worst-case minimum noise figure ($\text{NF}_{\text{min}}$). We utilize a derivative-free optimization method to effectively identify robust Pareto optimal device designs. This approach enhances our comprehension of the trade-off space, facilitating more informed decision-making. Furthermore, this method is general across different applications. Although it does not guarantee a globally optimal design, we demonstrate its effectiveness in GaN transistor sizing. The primary advantage of this method is that it enables the attainment of near-optimal or even optimal designs with just a fraction of the simulations required for an exhaustive full-grid search.

eess.SY↗

arXiv2024

Compact Model Parameter Extraction via Derivative-Free Optimization

In this paper, we address the problem of compact model parameter extraction to simultaneously extract tens of parameters via derivative-free optimization. Traditionally, parameter extraction is performed manually by dividing the complete set of parameters into smaller subsets, each targeting different operational regions of the device, a process that can take several days or weeks. Our approach streamlines this process by employing derivative-free optimization to identify a good parameter set that best fits the compact model without performing an exhaustive number of simulations. We further enhance the optimization process to address three critical issues in device modeling by carefully choosing a loss function that focuses on relative errors rather than absolute errors to ensure consistent performance across different orders of magnitude, prioritizes accuracy in key operational regions above a specific threshold, and reduces sensitivity to outliers. Furthermore, we utilize the concept of train-test split to assess the model fit and avoid overfitting. We demonstrate the effectiveness of our approach by successfully modeling a diamond Schottky diode with the SPICE diode model and a GaN-on-SiC HEMT with the ASM-HEMT model. For the latter, which involves extracting 35 parameters for the ASM-HEMT DC model, we identified the best set of parameters in under 6,000 trials. Additional examples using both devices are provided to demonstrate robustness to outliers, showing that an excellent fit is achieved even with over 25% of the data purposely corrupted. These examples demonstrate the practicality of our approach, highlighting the benefits of derivative-free optimization in device modeling.

cs.LG↗

arXiv2021

Effects of Proton Irradiation on Hole Carrier Transport in Hydrogen-Terminated Diamond Surfaces

In this letter, we report the effects of irradiating hydrogen-terminated diamond surfaces with protons. We study the electrical behavior of the two-dimensional hole gas that forms on the diamond surface as a result of hydrogen-termination. Four diamond samples, two of which were passivated with Al2O3 and the other two unpassivated, were irradiated with 2 MeV protons at two fluences, 0.5x10^14 and 1.0x10^14 /cm^2. The hole conductivity degraded at a higher proton fluence, which is attributed to the reduction of the mobility caused by enhanced hole scattering. Both passivated and unpassivated samples exhibited a reduction in the mobility, which can be explained by charging effects of the Al2O3 (for the passivated samples) and degradation of the hydrogen-terminated surface (for the unpassivated samples). To our knowledge, this is the first reported data on 2 MeV proton tolerance of hydrogen-terminated diamond surfaces.

cond-mat.mtrl-sci↗

arXiv2020

Analysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond

Here we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, surface roughness, non-polar optical phonons, and acoustic phonons are included. Using a Schrodinger/Poisson solver, the heavy hole, light hole, and split-off bands are treated separately. To compare the calculations with experimental data, Hall-effect structures were fabricated and measured at temperatures ranging from 25 to 700 K, with hole sheet densities ranging from 2 to 6$\times10^{12}\;\text{cm}^{-2}$ and typical mobilities measured from 60 to 100 cm$^{2}$/(V$\cdot$s) at room temperature. Existing data from literature was also used, which spans sheet densities above 1$\times10^{13}\;\text{cm}^{-2}$. Our analysis indicates that for low sheet densities, surface impurity scattering by charged acceptors and surface roughness are not sufficient to account for the low mobility. Moreover, the experimental data suggests that long-range potential fluctuations exist at the diamond surface, and are particularly enhanced at lower sheet densities. Thus, we propose a second type of surface impurity scattering which is caused by disorder related to the C-H dipoles.

physics.app-ph↗