arXiv subjects

Stéphane Andrieu

Publications and source records attributed to Stéphane Andrieu.

11 recordsLinked to original sources

arXiv2026

Magneto-optical signal from $\mathrm{Co_2Mn}$-based Heusler thin films in MOKE and BLS

$\mathrm{Co_2Mn}$-based Heusler compounds offer a versatile, composition-tunable platform for magnonics and spintronics. Among them, the half-metallic $\mathrm{Co_2MnSi}$ is of particular interest for magnonics owing to its ultralow Gilbert damping, yet its weak magneto-optical response in the visible challenges optical probing such as Brillouin light scattering (BLS). We study the magneto-optical response of epitaxial $\mathrm{Co_2Mn}X$ films ($X = \{\mathrm{Al}_x\mathrm{Si}_{1-x}, \mathrm{Ga}_x\mathrm{Ge}_{1-x}, \mathrm{Sn}\}$) by magneto-optical Kerr effect (MOKE) spectroscopy and BLS. Angle-resolved MOKE resolves a significant, wavelength-dependent quadratic MOKE (QMOKE) only for $\mathrm{Co_2MnSi}$, whereas $\mathrm{Co_2MnAl}$, $\mathrm{Co_2MnGa}$ and $\mathrm{Co_2MnSn}$ respond dominantly linearly. Comparing BLS intensities of thermal magnons at two wavelengths, $\mathrm{Co_2MnSi}$ gives the weakest signal at 532 nm yet among the strongest at 457 nm, tracking the spectral dependence of its Kerr angle. These results emphasise the relation between the two magneto-optical techniques, guiding the choice of probing wavelength for $\mathrm{Co_2Mn}$-based Heusler compounds.

cond-mat.mes-hall↗

arXiv2026

Epitaxial $\mathrm{Co_2MnSi}$ with intrinsic magnetocrystalline anisotropy as a route to bias-field-free nonlinear half-metal magnonics at the nanoscale

Half-metallic Heusler compounds like $\mathrm{Co_2MnSi}$ allow to bridge magnonic and spintronic functionality for hybrid unconventional computing approaches with sought-after properties like 100% spin polarization and associated low Gilbert damping $α\leq 10^{-3}$. However, the desirable material parameters are inherently tied to the crystal lattice with a particularly critical dependence on structural order in $\mathrm{Co_2MnSi}$. To date, the successful fabrication of nanoscale devices with robust structural integrity remains yet a challenge, and consequently the impact of the material parameters on the resulting nonlinear spin-wave dynamics remains largely unexplored. Here, we report on a study of linear and nonlinear spin-wave dynamics in transversally magnetized $\mathrm{Co_2MnSi}$ waveguides with impeccable crystalline ordering. We show that epitaxial, $\mathrm{L2}_1$-ordered $\mathrm{Co_2MnSi}$ exhibits an intrinsic cubic anisotropy with first- and second-order contributions, stabilizing a magnetization alignment along the crystal $\langle110\rangle$ directions. We confirm the implication of an unaffected crystal structure resulting in preserved magnetic properties in the patterned structures. Herein, the persistent magnetocrystalline anisotropy reshapes the spin-wave dispersion which yields a first-order nonlinear instability suppression range extending over several GHz - even for vanishing bias fields. Moreover, the intrinsic magnetocrystalline anisotropy can be exploited to counteract shape demagnetization for a stabilized low bias field operation in the favourable Damon-Eshbach geometry with high group velocities and decay lengths. Together with the proven half-metallicity and ultralow Gilbert damping, this research establishes $\mathrm{Co_2MnSi}$ as a robust, scalable platform towards bias-field-free nonlinear half-metal magnonics.

cond-mat.mes-hall↗

arXiv2026

Spin-polarization of the electric current in half-metallic Co$_2$MnSi Heusler thin films

Using propagating spin wave spectroscopy we measure the spin wave Doppler shift in patterned MgO/Co$_2$MnSi/MgO thin films and determine the degree of spin-polarization of the electric current. Our measurements reveal that the current is fully spin-polarized in the devices. This shows that the half-metallic character of the electron band structure translates into a fully spin polarized current flowing across the patterned films. Additionally, we measure a current-induced change of the spin-wave attenuation from which we estimate the non-adiabatic spin-transfer-torque parameter.

cond-mat.mtrl-sci↗

arXiv2026

Guidelines for interpreting microfocused Brillouin light scattering spectra

We present an analysis of the influence of spin wave dispersion relations and profiles on microfocused Brillouin Light Scattering spectra. Three archetypal magnetic materials are reported: a 51-nm thick Bi-substituted YIG, a 25-nm thick Heusler compound and 50-nm thick CoFeB alloy. These samples were chosen because they exhibit strongly contrasting spectral features -peak frequencies, linewidth, skewness. The shapes of these spectral features reflect the underlying spin wave dispersion relations and the thickness profile of the related spin wave modes. While analytical expressions of the dispersion relations provide a satisfactory description of the spectra if the modes are in separate frequency domains, the exact dispersion relations and the exact mode profiles are required for a correct description of the spectra not only when mode hybridization is present in the range or near the range of frequencies and wavevector accessed by the experiment. Our examples of microfocused BLS spectra are handy references that can be used as interpretation guidelines for BLS spectra recorded on a broader range of materials.

cond-mat.mes-hall↗

arXiv2021

Nanocontact vortex oscillators based on Co$_2$MnGe pseudo-spin valves

We present an experimental study of vortex dynamics in magnetic nanocontacts based on pseudo spin valves comprising the Co$_2$MnGe Heusler compound. The films were grown by molecular beam epitaxy, where precise stoichiometry control and tailored stacking order allowed us to define the bottom ferromagnetic layer as the reference layer, with minimal coupling between the free and reference layers. 20-nm diameter nanocontacts were fabricated using a nano-indentation technique, leading to self-sustained gyration of the vortex generated by spin-transfer torques above a certain current threshold. By combining frequency- and time-domain measurements, we show that different types of spin-transfer induced dynamics related to different modes associated to the magnetic vortex configuration can be observed, such as mode hopping, mode coexistence and mode extinction appear in addition to the usual gyration mode.

cond-mat.mes-hall↗

arXiv2019

Chaos in Magnetic Nanocontact Vortex Oscillators

We present an experimental study of spin-torque driven vortex self-oscillations in magnetic nanocontacts. We find that above a certain threshold in applied currents, the vortex gyration around the nanocontact is modulated by relaxation oscillations, which involve periodic reversals of the vortex core. This modulation leads to the appearance of commensurate but also more interestingly here, incommensurate states, which are characterized by devil's staircases in the modulation frequency. We use frequency- and time-domain measurements together with advanced time-series analyses to provide experimental evidence of chaos in incommensurate states of vortex oscillations, in agreement with theoretical predictions.

cond-mat.mes-hall↗

arXiv2018

Epitaxial Heusler Superlattice Co2MnAl/Fe2MnAl with Perpendicular Magnetic Anisotropy and Termination-Dependent Half-Metallicity

Single-crystal Heusler atomic-scale superlattices that have been predicted to exhibit perpendicular magnetic anisotropy and half-metallicity have been successfully grown by molecular beam epitaxy. Superlattices consisting of full-Heusler Co$_2$MnAl and Fe$_2$MnAl with one to three unit cell periodicity were grown on GaAs (001), MgO (001), and Cr (001)/MgO (001). Electron energy loss spectroscopy maps confirmed clearly segregated epitaxial Heusler layers with high cobalt or high iron concentrations for samples grown near room temperature on GaAs (001). Superlattice structures grown with an excess of aluminum had significantly lower thin film shape anisotropy and resulted in an out-of-plane spin reorientation transition at temperatures below 200 K for samples grown on GaAs (001). Synchrotron-based spin resolved photoemission spectroscopy found that the superlattice structure improves the Fermi level spin polarization near the X point in the bulk Brillouin zone. Stoichiometric Co$_2$MnAl terminated superlattice grown on MgO (001) had a spin polarization of 95%, while a pure Co$_2$MnAl film had a spin polarization of only 65%.

cond-mat.mtrl-sci↗

arXiv2015

Direct evidence for minority spin gap in the Co2MnSi Heusler alloy

Half Metal Magnets are of great interest in the field of spintronics because of their potential full spin-polarization at the Fermi level and low magnetization damping. The high Curie temperature and predicted 0.7eV minority spin gap make the Heusler alloy Co2MnSi very promising for applications.We investigated the half-metallic magnetic character of this alloy using spin-resolved photoemission, ab initio calculation and ferromagnetic resonance. At the surface of Co2MnSi, a gap in the minority spin channel is observed, leading to 100% spin polarization. However, this gap is 0.3 eV below the Fermi level and a minority spin state is observed at the Fermi level. We show that a minority spin gap at the Fermi energy can nevertheless be recovered either by changing the stoichiometry of the alloy or by covering the surface by Mn, MnSi or MgO. This results in extremely small damping coefficients reaching values as low as 7x 10-4.

cond-mat.mtrl-sci↗

arXiv2013

Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers

The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tunneling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii) with a monolayer of O deposited at the crystalline interface. In both cases we observe an asymmetric bias dependence of TMR and a reversal of its sign at large bias. We propose a general model to explain the bias dependence in these and similar systems reported earlier. The model predicts the existence of two distinct TMR regimes: (i) tunneling regime when the interface is modified with layers of a different insulator and (ii) resonant regime when thin metallic layers are inserted at the interface. We demonstrate that in the tunneling regime negative TMR is due to the high voltage which overcomes the exchange splitting in the electrodes, while the asymmetric bias dependence of TMR is due to the interface transmission probabilities. In the resonant regime inversion of TMR could happen at zero voltage depending on the alignment of the resonance levels with the Fermi surfaces of the electrodes. Moreover, the model predicts a regime in which TMR has different sign at positive and negative bias suggesting possibilities of combining memory with logic functions.

cond-mat.mtrl-sci↗

arXiv2011

Giant thermoelectric effect in Al2O3 magnetic tunnel junctions

Thermoelectric effects in magnetic nanostructures and the so-called spin caloritronics are attracting much interest. Indeed it provides a new way to control and manipulate spin currents which are key elements of spin-based electronics. Here we report on giant magnetothermoelectric effect in Al2O3 magnetic tunnel junctions. The thermovoltage in this geometry can reach 1 mV. Moreover a magneto-thermovoltage effect could be measured with ratio similar to the tunnel magnetoresistance ratio. The Seebeck coefficient can then be tuned by changing the relative magnetization orientation of the two magnetic layers in the tunnel junction. Therefore our experiments extend the range of spintronic devices application to thermoelectricity and provide a crucial piece of information for understanding the physics of thermal spin transport.

cond-mat.mtrl-sci↗

arXiv1998

Finite-size scaling in thin Fe/Ir(100) layers

The critical temperature of thin Fe layers on Ir(100) is measured through Mößbauer spectroscopy as a function of the layer thickness. From a phenomenological finite-size scaling analysis, we find an effective shift exponent lambda = 3.15 +/- 0.15, which is twice as large as the value expected from the conventional finite-size scaling prediction lambda=1/nu, where nu is the correlation length critical exponent. Taking corrections to finite-size scaling into account, we derive the effective shift exponent lambda=(1+2Δ_1)/nu, where Delta_1 describes the leading corrections to scaling. For the 3D Heisenberg universality class, this leads to lambda = 3.0 +/- 0.1, in agreement with the experimental data. Earlier data by Ambrose and Chien on the effective shift exponent in CoO films are also explained.

cond-mat.stat-mech↗