arXiv subjects

Stéphane Fusil

Publications and source records attributed to Stéphane Fusil.

13 recordsLinked to original sources

arXiv2026

Reprogrammable magnonic logic in a multiferroic heterostructure via magnetoelectric coupling

The realization of fully reconfigurable, voltage-controlled, and programmable on-chip magnonic devices is essential to fully harness the potential of spin waves for signal processing, logic and neuromorphic computing. Yet, existing demonstrations of electrical tuning of magnonic responses are either volatile, current-driven and thus energy-inefficient, or rely on local strain modification limiting their scalability for wafer-scale integration. Here, we address this challenge using a BiFeO3/La0.67Sr0.33MnO3 multiferroic thin film heterostructure. We show that ferroelectric domain engineering in BiFeO3 enables deterministic tuning of the magnon dispersion of La0.67Sr0.33MnO3, producing frequency shifts up to $\sim 150 MHz$ and allowing reconfigurable waveguiding. Micro-focused Brillouin light scattering directly images these effects, revealing electrically defined magnonic waveguides and spatially programmable dispersion. Compared to conventional approaches, this method provides non-volatile and reversible control. Furthermore, using an inverse-design simulation code, we demonstrate the capability of our platform to perform advanced magnonic functions such as frequency demultiplexing. Our results open a new avenue for using magnetoelectric heterostructures for magnonic logic, with further applicability to reservoir and neuromorphic computing and AI driven magnonic devices.

cond-mat.mes-hall↗

arXiv2025

Strain-induced polarization rotation in freestanding ferroelectric oxide membranes

Freestanding ferroelectric membranes have emerged as a versatile tool for strain engineering, enabling the exploration of ferroelectric properties beyond traditional epitaxy. The resulting ferroelectric domain patterns stem from the balance at the local scale of several effects playing a key role, i.e. piezoelectricity linked to strain, and flexoelectricity arising from strain gradients. To weight their respective contributions for a given membrane geometry, the strain profile has to be mapped with respect to the ferroelectric polarization landscape, a necessary step to allow for a controlled tailoring of the latter. In this study, we examine the effect of bending strain on a Pb(Zr,Ti)O3 membrane in a fold-like structure, observing a polarization rotation from out-of-plane to in-plane at the fold apex. Combining piezoresponse force microscopy, Raman spectroscopy, and scanning transmission electron microscopy, we map the ferroelectric polarization direction relative to the height profile of the membrane, and discuss the contributions of strain and strain gradients for this archetypal fold geometry. Our findings offer new insights into strain-engineered polarization configurations, and emphasize strain effects at the nanoscale to tune the functional properties in freestanding membranes.

cond-mat.mtrl-sci↗

arXiv2024

Terahertz antiferromagnetic dynamics induced by ultrafast spin currents

Insulating antiferromagnets are anticipated as the main protagonists of ultrafast spintronics, with their intrinsic terahertz dynamics and their abililty to transport spin information over long distances. However, direct transfer of spin angular momentum to an antiferromagnetic insulator at picosecond time scales remains to be demonstrated. Here, studying the ultrafast behaviour of ferromagnetic metal/antiferromagnetic insulator bilayers, we evidence the generation of coherent excitations in the antiferromagnet combined with a modulation of the demagnetization behavior of the ferromagnet. This confirms that magnetic information can indeed be propagated into antiferromagnetic spin waves at picosecond timescales, thereby opening an avenue towards ultrafast manipulation of magnetic information.

cond-mat.mes-hall↗

arXiv2022

Visualizing giant ferroelectric gating effects in large-scale WSe$_2$/BiFeO$_3$ heterostructures

Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly-multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO$_3$, a room-temperature multiferroic oxide, and WSe$_2$, a semiconducting two-dimensional material with potential for photovoltaics and photonics. WSe$_2$ is grown by molecular beam epitaxy and transferred on a centimeter-scale onto BiFeO$_3$ films. Using angle-resolved photoemission spectroscopy, we visualize the electronic structure of 1 to 3 monolayers of WSe$_2$ and evidence a giant energy shift as large as 0.75 eV induced by the ferroelectric polarization direction in the underlying BiFeO$_3$. Such a strong shift opens new perspectives in the efficient manipulation of TMDs properties by proximity effects.

cond-mat.mtrl-sci↗

arXiv2022

Imaging topological defects in a non-collinear antiferromagnet

We report on the formation of topological defects emerging from the cycloidal antiferromagnetic order at the surface of bulk BiFeO$_3$ crystals. Combining reciprocal and real-space magnetic imaging techniques, we first observe, in a single ferroelectric domain, the coexistence of antiferromagnetic domains in which the antiferromagnetic cycloid propagates along different wavevectors. We then show that the direction of these wavevectors is not strictly locked to the preferred crystallographic axes as continuous rotations bridge different wavevectors. At the junctions between the magnetic domains, we observe topological line defects identical to those found in a broad variety of lamellar physical systems with rotational symmetries. Our work establishes the presence of these magnetic objects at room temperature in the multiferroic antiferromagnet BiFeO$_3$, offering new possibilities for their use in spintronics.

cond-mat.mes-hall↗

arXiv2020

A switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO$_3$

Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a ''ferroelectric'' 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO$_3$ single crystal in which 1 percent of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures.

cond-mat.mtrl-sci↗

arXiv2019

Giant topological Hall effect in correlated oxide thin films

Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in the presence of correlations remains unclear. Here we demonstrate a very large topological Hall effect (THE) in thin films of a lightly electron-doped charge-transfer insulator, (Ca, Ce)MnO3. Magnetic force microscopy reveals the presence of magnetic bubbles, whose density vs. magnetic field peaks near the THE maximum, as is expected to occur in skyrmion systems. The THE critically depends on carrier concentration and diverges at low doping, near the metal-insulator transition. We discuss the strong amplification of the THE by correlation effects and give perspectives for its non-volatile control by electric fields.

cond-mat.mtrl-sci↗

arXiv2012

A ferroelectric memristor

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.

cond-mat.mtrl-sci↗

arXiv2011

Nanoscale ferroelectric manipulation of magnetic flux quanta

Using heterostructures that combine a large-polarization ferroelectric (BiFeO3) and a high-temperature superconductor (YBa2Cu3O7-δ), we demonstrate the modulation of the superconducting condensate at the nanoscale via ferroelectric field effects. Through this mechanism, a nanoscale pattern of normal regions that mimics the ferroelectric domain structure can be created in the superconductor. This yields an energy landscape for magnetic flux quanta and, in turn, couples the local ferroelectric polarization to the local magnetic induction. We show that this form of magnetoelectric coupling, together with the possibility to reversibly design the ferroelectric domain structure, allows the electrostatic manipulation of magnetic flux quanta.

cond-mat.supr-con↗

arXiv2010

Imaging ferroelectric domains in multiferroics using a low-energy electron microscope in the mirror operation mode

We report on low-energy electron microscopy imaging of ferroelectric domains with submicron resolution. Periodic strips of 'up' and 'down'-polarized ferroelectric domains in bismuth ferrite -a room temperature multiferroic- serve as a model system to compare low-energy electron microscopy with the established piezoresponse force microscopy. The results confirm the possibility of full-field imaging of ferroelectric domains with short acquisition times by exploiting the sensitivity of ultraslow electrons to small variations of the electric potential near surfaces in the "mirror" operation mode.

physics.ins-det↗

arXiv2010

Unravelling the role of the interface for spin injection into organic semiconductors

Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.

cond-mat.mtrl-sci↗

arXiv2007

Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAlO3/SrTiO3 interface as a function of LaAlO3 growth conditions

At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions.

cond-mat.mtrl-sci↗

arXiv2007

Magnetic patterning of (Ga,Mn)As by hydrogen passivation

We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passivation on perpendicularly magnetized layers, the switching fields can be maintained closer to the continuous film coercivity, compared to dots made by usual dry etch techniques.

cond-mat.mtrl-sci↗