arXiv subjects

Stefan Enzner

Publications and source records attributed to Stefan Enzner.

10 recordsLinked to original sources

arXiv2026

Enhanced Screening in Epitaxial Graphene via Nearly Free-Electron Metal Intercalation

Graphene exhibits extraordinarily high carrier mobility, making it a promising platform for next-generation electronics. Scalable growth on SiC, however, suffers from limited dielectric screening at the graphene-substrate interface, degrading electronic performance. In this work, we systematically enhance dielectric screening by intercalating a bilayer of indium at the graphene-SiC interface. Using graphene's plasmaronic signature observed in angle-resolved photoemission spectroscopy as a proxy for interaction strength, we quantitatively demonstrate strong dielectric screening arising from the interplay of both indium layers. Layer-resolved density functional theory shows that the first indium layer acts as a buffer that absorbs substrate interactions, enabling the second layer to form a nearly free-electron system that efficiently screens the graphene layer above. Experiments with only a single intercalated indium layer reveal reduced screening, confirming the essential role of the second layer. Our results establish 2ML indium intercalation as a powerful route for engineering dielectric environments in graphene.

cond-mat.mtrl-sci↗

arXiv2026

Resonantly-enhanced Raman response in graphene-capped bismuthene on SiC

Two-dimensional quantum spin Hall insulators based on atomic monolayers offer a promising route toward dissipationless electronics, yet their practical use is often limited by environmental instability. Encapsulating the system with a graphene capping layer has been shown to be a reliable method to prevent oxidation and degradation. However, the confirmation of a successful encapsulation still relies on ultra-high vacuum techniques, that considerably slow the process. Here, we present an ex situ, rapid, nondestructive and spatially resolved Raman characterization of graphene-capped bismuthene, a honeycomb monolayer of Bi on SiC. A pronounced Raman scattering peak at around 122 cm-1 is identified as the E2g phonon of bismuthene, via a comparison with density functional perturbation theory calculations. We use excitation-energy and polarization-dependent Raman measurements to enable an unambiguous assignment of the spectral features. Tuning the excitation energy close to the excitonic transition in pristine bismuthene, we observe a strong enhancement of the Raman response and the emergence of additional scattering peaks. In this regime, higher-order phonon features, as well as interfacial modes between bismuthene and the SiC substrate, become visible, suggesting the involvement of resonant scattering processes. Our results establish Raman micro-spectroscopy as a versatile tool for probing graphene-protected quantum materials, providing access to lattice dynamics and interlayer coupling.

cond-mat.mtrl-sci↗

arXiv2026

Distinct lattice and charge excitations in AV3Sb5 kagome superconductors

The kagome superconductor family AV3Sb5 (A=Cs, Rb, K) provides a rich platform for exploring diverse electronic symmetry breaking phenomena, including superconductivity and various forms of density wave orders. Although these compounds share the identical lattice structure in the normal state, they exhibit distinct forms of symmetry breaking upon entering the charge density wave (CDW) phase, and the microscopic origin of which remain elusive. Here, we investigate the lattice and charge degrees of freedom in AV3Sb5 using angle-resolved polarized Raman spectroscopy. Our comprehensive polarization-resolved measurements reveal that the lifting of the twofold-degeneracy of the E2g phonon mode in the CDW phase-previously reported only in CsV3Sb5 with a 3 GHz splitting-also appears ubiquitously in the other two compounds. In contrast, the collective CDW excitations exhibit markedly different polarization dependences depending on the alkali-metal species. These distinct behaviors in the lattice and charge channels provide crucial insight into the enigmatic material-dependent symmetry breaking phenomena that appear in the CDW phase. Furthermore, our experiments, together with first-principles calculations and an effective Hamiltonian model, shed light on the nature of the charge order structure in AV3Sb5 kagome superconductors.

cond-mat.str-el↗

arXiv2025

Tunable Electronic Correlations in 135-Kagome Metals

Kagome metals exhibit rich correlated-electron physics, yet a systematic understanding of the degree of correlation across transition-metal species remains elusive. Using density-functional theory plus multi-orbital slave-spin mean-field theory, we investigate electronic correlations in the Ti-, V-, and Cr-based 135 compounds with Sb and Bi pnictogens. We find that the significantly stronger degree of correlation of the Cr-based materials compared to Ti and V can only be explained through the synergy of two effects: the larger electron filling of the $d$-shell and the reduced characteristic kinetic energy. We put forward that the substitution of Sb with Bi strengthens correlations in all compounds and make the prediction that the-yet-to-be-synthesized CsCr$_3$Bi$_5$ must be the most strongly correlated member of the entire family. These findings provide a quantitative, band-structure-based framework for understanding and predicting correlation strength in Kagome metals.

cond-mat.str-el↗

arXiv2025

Phonon fluctuation diagnostics: Origin of charge order in AV$_3$Sb$_5$ kagome metals

The microsopic origin of the charge-density wave (CDW) in AV$_3$Sb$_5$ (A = K, Rb, Cs) kagome metals remains a longstanding question, often revolving around electron-phonon coupling and purely electronic mechanisms involving Van Hove scenarios, nesting, and sublattice interference. To reveal the processes driving the CDW transition, we combine ab-initio calculations analysis of the phonon self-energy and angle-resolved photoemission spectroscopy (ARPES). Our momentum-resolved study, supported by ARPES data, reveals that lattice instabilities in the V-135 family of kagome metals appear to also be driven by electronic states far from high-symmetry points, where these states exhibit the strongest coupling with the phonon modes responsible for the CDW distortion. Footing on an interpretation scheme based on phonon fluctuation diagnostics, our work challenges and revises theories that so far have exclusively attributed CDW formation to nesting effects close to the Fermi level.

cond-mat.str-el↗

arXiv2024

Van-Hove tuning of Fermi surface instabilities through compensated metallicity

Van-Hove (vH) singularities in the vicinity of the Fermi level facilitate the emergence of electronically mediated Fermi surface instabilities. This is because they provide a momentum-localized enhancement of density of states promoting selective electronic scattering channels. High-temperature topological superconductivity has been argued for in graphene at vH filling which, however, has so far proven inaccessible due to the demanded large doping from pristine half filling. We propose compensated metallicity as a path to unlock vH-driven pairing close to half filling in an electronic honeycomb lattice model. Enabled by an emergent multi-pocket fermiology, charge compensation is realized by strong breaking of chiral symmetry from intra-sublattice hybridization, while retaining vH dominated physics at the Fermi level. We conclude by proposing tangible realizations through quantum material design.

cond-mat.str-el↗

arXiv2023

Observation of termination-dependent topological connectivity in a magnetic Weyl kagome-lattice

Engineering surfaces and interfaces of materials promises great potential in the field of heterostructures and quantum matter designer, with the opportunity of driving new many-body phases that are absent in the bulk compounds. Here, we focus on the magnetic Weyl kagome system Co$_3$Sn$_2$S$_2$ and show how for different sample's terminations the Weyl-points connect also differently, still preserving the bulk-boundary correspondence. Scanning-tunnelling microscopy has suggested such a scenario indirectly. Here, we demonstrate this directly for the fermiology of Co$_3$Sn$_2$S$_2$, by linking it to the system real space surfaces distribution. By a combination of micro-ARPES and first-principles calculations, we measure the energy-momentum spectra and the Fermi surfaces of Co$_3$Sn$_2$S$_2$ for different surface terminations and show the existence of topological features directly depending on the top-layer electronic environment. Our work helps to define a route to control bulk-derived topological properties by means of surface electrostatic potentials, creating a realistic and reliable methodology to use Weyl kagome metals in responsive magnetic spintronics.

cond-mat.str-el↗

arXiv2023

Flat band separation and robust spin-Berry curvature in bilayer kagome metals

Kagome materials have emerged as a setting for emergent electronic phenomena that encompass different aspects of symmetry and topology. It is debated whether the XV$_6$Sn$_6$ kagome family (where X is a rare earth element), a recently discovered family of bilayer kagome metals, hosts a topologically non-trivial ground state resulting from the opening of spin-orbit coupling gaps. These states would carry a finite spin-Berry curvature, and topological surface states. Here, we investigate the spin and electronic structure of the XV$_6$Sn$_6$ kagome family. We obtain evidence for a finite spin-Berry curvature contribution at the center of the Brillouin zone, where the nearly flat band detaches from the dispersing Dirac band because of spin-orbit coupling. In addition, the spin-Berry curvature is further investigated in the charge density wave regime of ScV$_6$Sn$_6$, and it is found to be robust against the onset of the temperature-driven ordered phase. Utilizing the sensitivity of angle resolved photoemission spectroscopy to the spin and orbital angular momentum, our work unveils the spin-Berry curvature of topological kagome metals, and helps to define its spectroscopic fingerprint.

cond-mat.str-el↗

arXiv2023

Dynamics and Resilience of the Charge Density Wave in a bilayer kagome metal

Long-range electronic order descending from a metallic parent state constitutes a rich playground to study the intricate interplay of structural and electronic degrees of freedom. With dispersive and correlation features as multifold as topological Dirac-like itinerant states, van-Hove singularities, correlated flat bands, and magnetic transitions at low temperature, kagome metals are located in the most interesting regime where both phonon and electronically mediated couplings are significant. Several of these systems undergo a charge density wave (CDW) transition, and the van-Hove singularities, which are intrinsic to the kagome tiling, have been conjectured to play a key role in mediating such an instability. However, to date, the origin and the main driving force behind this charge order is elusive. Here, we use the topological bilayer kagome metal ScV6Sn6 as a platform to investigate this puzzling problem, since it features both kagome-derived nested Fermi surface and van-Hove singularities near the Fermi level, and a CDW phase that affects the susceptibility, the neutron scattering, and the specific heat, similarly to the siblings AV3Sb5 (A = K, Rb, Cs) and FeGe. We report on our findings from high-resolution angle-resolved photoemission, density functional theory, and time-resolved optical spectroscopy to unveil the dynamics of its CDW phase. We identify the structural degrees of freedom to play a fundamental role in the stabilization of charge order. Along with a comprehensive analysis of the subdominant impact from electronic correlations, we find ScV6Sn6 to feature an instance of charge density wave order that predominantly originates from phonons. As we shed light on the emergent phonon profile in the low-temperature ordered regime, our findings pave the way for a deeper understanding of ordering phenomena in all CDW kagome metals.

cond-mat.str-el↗

arXiv2022

Moiré pattern formation in epitaxial growth on a covalent substrate: Sb on InSb(111)A

Structural moiré superstructures arising from two competing lattices may lead to unexpected electronic behavior, such as superconductivity or Mottness. Most investigated moiré heterostructures are based on van der Waals (vdW) materials, as strong interface interactions typically lead to the formation of strained films or regular surface reconstructions. Here we successfully synthesize ultrathin Sb films, that are predicted to show thickness-dependent topological properties, on semi-insulating InSb(111)A. Despite the covalent nature of the substrate surface, we prove by scanning transmission electron microscopy (STEM) that already the first layer of Sb atoms grows completely unstrained, while azimuthally aligned. Rather than compensating the lattice mismatch of -6.4% by structural modifications, the Sb films form a pronounced moiré pattern as we evidence by scanning tunneling microscopy (STM) topography up to film thicknesses of several bilayers. Our model calculations based on density functional theory (DFT) assign the moiré pattern to a periodic surface corrugation. In agreement with DFT predictions, irrespective of the moiré modulation, the topological surface state known on thick Sb film is experimentally confirmed to persist down to low film thicknesses, and the Dirac point shifts towards lower binding energies with decreasing Sb thickness.

cond-mat.mtrl-sci↗