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Stefan Reinhard

Publications and source records attributed to Stefan Reinhard.

3 recordsLinked to original sources

An interpretable machine learning system for colorectal cancer diagnosis from pathology slides

Considering the profound transformation affecting pathology practice, we aimed to develop a scalable artificial intelligence (AI) system to diagnose colorectal cancer from whole-slide images (WSI). For this, we propose a deep learning (DL) system that learns from weak labels, a sampling strategy that reduces the number of training samples by a factor of six without compromising performance, an approach to leverage a small subset of fully annotated samples, and a prototype with explainable predictions, active learning features and parallelisation. Noting some problems in the literature, this study is conducted with one of the largest WSI colorectal samples dataset with approximately 10,500 WSIs. Of these samples, 900 are testing samples. Furthermore, the robustness of the proposed method is assessed with two additional external datasets (TCGA and PAIP) and a dataset of samples collected directly from the proposed prototype. Our proposed method predicts, for the patch-based tiles, a class based on the severity of the dysplasia and uses that information to classify the whole slide. It is trained with an interpretable mixed-supervision scheme to leverage the domain knowledge introduced by pathologists through spatial annotations. The mixed-supervision scheme allowed for an intelligent sampling strategy effectively evaluated in several different scenarios without compromising the performance. On the internal dataset, the method shows an accuracy of 93.44% and a sensitivity between positive (low-grade and high-grade dysplasia) and non-neoplastic samples of 0.996. On the external test samples varied with TCGA being the most challenging dataset with an overall accuracy of 84.91% and a sensitivity of 0.996.

eess.IV

Low-threshold operation of GaAs-based (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well lasers emitting in the O-band

The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates for improved homogeneity while the growth process is carried out in a single run for an improved quality. Furthermore, the optical confinement factor is increased by increasing the aluminum concentration within the cladding layers to a value of 65%. The procedure is carried out for devices with emission wavelengths of 1.26 micrometer as well as 1.30 micrometer. Differential efficiencies as high as 58% and threshold current densities as low as 0.16 kA/cm^2 are observed in case of devices emitting at 1.26 micrometer at room temperature. Furthermore, excellent characteristic temperatures of T_0=(72 plus minus 5)K and T_1=(293 plus minus 16) K are recorded in the temperature range between 10 degree Celsius and 100 degree Celsius. Devices emitting at 1.30 micrometer exhibit differential efficiencies of 31% and threshold current densities of 0.50 kA/cm^2 at room temperature. Further improvements of these properties and wavelength extension schemes are briefly discssused.

cond-mat.mtrl-sci

Temperature-dependent spectral properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructure lasers

This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well as experimental findings. A microscopic theory is applied to discuss band bending effects giving rise to the characteristic blue shift with increasing charge carrier density observed in type-II heterostructures. Furthermore, gain spectra for a W-quantum well heterostructure are calculated up to high charge carrier densities. At these high charge carrier densities, the interplay between multiple type-II transitions results in broad and flat gain spectra with a spectral width of approximately 160 nm. Furthermore, the temperature-dependent properties of broad-area edge-emitting lasers are analyzed using electroluminescence as well as laser characteristic measurements. A first indication for the theoretically predicted broad gain spectra is presented and the interplay between the temperature-dependent red shift and the charge carrier density-dependent blue shift is discussed. A combination of these effects results in a significant reduction of the temperature-induced red shift of the emission wavelengths and even negative shift rates of (-0.10 plusminus 0.04) nm/K are achieved.

cond-mat.mes-hall