A Two-Step Chemical Vapor Deposition Process for the Synthesis of an Ir(111)/Borophene/2D-Hexagonal Boron Nitride Heterostructure by Intrinsic Segregation
We report on a two-step ultrahigh vacuum chemical vapor deposition synthesis of a vertical Ir(111)/borophene/hexagonal boron nitride heterostructure, using borazine as a single-source precursor. The process takes advantage of the finite solubility of boron in Ir: low precursor pressure at high temperature first establishes a boron reservoir in the near-surface region of the substrate, whereas subsequent growth at higher precursor pressure promotes the formation of a closed hexagonal boron nitride monolayer. During cooldown, the reduced boron solubility drives segregation to the surface, resulting in the formation of a borophene monolayer beneath the hexagonal boron nitride overlayer. The heterostructure, with micron sized grains, homogeneously covers the entire Ir substrate. The study is performed by complementary spot profile analysis low-energy electron diffraction, low-energy electron microscopy, and scanning tunneling microscopy measurements. This intrinsic segregation-assisted growth concept provides a promising route toward scalable synthesis of high-quality, vertical heterostructures of two-dimensional materials.