arXiv subjects

Stefan Wilfert

Publications and source records attributed to Stefan Wilfert.

6 recordsLinked to original sources

arXiv2019

On the preparation and electronic properties of clean superconducting Nb(110) surfaces

We have studied cleaning procedures of Nb(110) by verifying the surface quality with low-energy electron diffraction, Auger electron spectroscopy, and scanning tunneling microscopy and spectroscopy. Our results show that the formation of a surface-near impurity depletion zone is inhibited by the very high diffusivity of oxygen in the Nb host crystal which kicks in at annealing temperatures as low as a few hundred degree Celsius. Oxygen can be removed from the surface by heating the crystal up to $T = 2400^\circ$C. Tunneling spectra measured on the clean Nb(110) surface exhibit a sharp conductance peak in the occupied states at an energy of about $-450$\,meV. Density functional theory calculations show that this peak is caused by a $d_{z^2}$ surface resonance band at the $\barΓ$ point of the Brillouin zonewhich provides a large density of states above the sample surface. The clean Nb(110) surface is superconducting with a gap width and a critical magnetic field strength in good agreement to the bulk value. In an external magnetic field we observe the Abrikosov lattice of flux quanta (vortices). Spatially resolved spectra show a zero-bias anomaly in the vortex core.

cond-mat.supr-con↗

arXiv2018

Breaking crystalline symmetry of epitaxial SnTe films by strain

SnTe belongs to the recently discovered class of topological crystalline insulators. Here we study the formation of line defects which break crystalline symmetry by strain in thin SnTe films. Strained SnTe(111) films are grown by molecular beam epitaxy on lattice- and thermal expansion coefficient-mismatched CdTe. To analyze the structural properties of the SnTe films we applied {\em in-situ} reflection high energy electron diffraction, x-ray reflectometry, high resolution x-ray diffraction, reciprocal space mapping, and scanning tunneling microscopy. This comprehensive analytical approach reveals a twinned structure, tensile strain, bilayer surface steps and dislocation line defects forming a highly ordered dislocation network for thick films with local strains up to 31\% breaking the translational crystal symmetry.

cond-mat.mtrl-sci↗

arXiv2018

Scanning tunneling spectroscopy investigations of superconducting-doped topological insulators: Experimental pitfalls and results

Recently the doping of topological insulators has attracted significant interest as a potential route towards topological superconductivity. Because many experimental techniques lack sufficient surface sensitivity, however, a definite proof of the coexistence of topological surface states and surface superconductivity is still outstanding. Here we report on highly surface sensitive scanning tunneling microscopy (STM) and spectroscopy (STS) experiments performed on Tl-doped Bi$_2$Te$_3$, a three-dimensional topological insulator which becomes superconducting in the bulk at $T_{\rm C} = 2.3$\,K. Landau level spectroscopy as well as quasiparticle interference mapping clearly demonstrated the presence of a topological surface state with a Dirac point energy $E_{\textrm{D}} = -(118 \pm 1)$\,meV and a Dirac velocity $v_{\textrm{D}} = (4.7 \pm 0.1)\cdot 10^{5}$\,m/s. Tunneling spectra often show a superconducting gap, but temperature- and field-dependent measurements show that both $T_{\rm C}$ and $μ_0 H_{\rm C}$ strongly deviate from the corresponding bulk values. Furthermore, in spite of acritical field value which clearly points to type-II superconductivity, no Abrikosov lattice could be observed. Experiments performed on normal-metallic Ag(111) prove that the gapped spectrum is only caused by superconducting tips, probably caused by a gentle crash with the sample surface during approach. Nearly identical results were found for the intrinsically n-type compound Nb-doped Bi$_2$Se$_3$. Our results suggest that the superconductivity in superconducting-doped V-VI topological insulators does not extend to the surface where the topological surface state is located.

cond-mat.supr-con↗

arXiv2016

Robust spin-polarized midgap states at step edges of topological crystalline insulators

Topological crystalline insulators are materials in which the crystalline symmetry leads to topologically protected surface states with a chiral spin texture, rendering them potential candidates for spintronics applications. Using scanning tunneling spectroscopy, we uncover the existence of one-dimensional (1D) midgap states at odd-atomic surface step edges of the three- dimensional topological crystalline insulator (Pb,Sn)Se. A minimal toy model and realistic tight- binding calculations identify them as spin-polarized flat bands connecting two Dirac points. This non-trivial origin provides the 1D midgap states with inherent stability and protects them from backscattering. We experimentally show that this stability results in a striking robustness to defects, strong magnetic fields, and elevated temperature.

cond-mat.mes-hall↗

arXiv2016

Mapping the effect of defect-induced strain disorder on the Dirac states of topological insulators

We provide a detailed microscopic characterization of the influence of defects-induced disorder onto the Dirac spectrum of three dimensional topological insulators. By spatially resolved Landau-levels spectroscopy measurements, we reveal the existence of nanoscale fluctuations of both the Dirac point energy as well as of the Dirac-fermions velocity which is found to spatially change in opposite direction for electrons and holes, respectively. These results evidence a scenario which goes beyond the existing picture based on chemical potential fluctuations. The findings are consistently explained by considering the microscopic effects of local stain introduced by defects, which our model calculations show to effectively couple to topological states, reshaping their Dirac-like dispersion over a large energy range. In particular, our results indicate that the presence of microscopic spatially varying stain, inevitably present in crystals because of the random distribution of defects, effectively couple to topological states and should be carefully considered for correctly describing the effects of disorder.

cond-mat.mes-hall↗

arXiv2016

Dual nature of magnetic dopants and competing trends in topological insulators

Topological insulators interacting with magnetic impurities have been reported to host several unconventional effects. These phenomena are described within the framework of gapping Dirac quasiparticles due to broken time-reversal symmetry. However, the overwhelming majority of studies demonstrate the presence of a finite density of states near the Dirac point even once Topological insulators become magnetic. Here, we map the response of topological states to magnetic impurities at the atomic scale. We demonstrate that magnetic order and gapless states can coexist. We show how this is the result of the delicate balance between two opposite trends, i.e. gap opening and emergence of a Dirac node impurity band, both induced by the magnetic dopants. Our results evidence a more intricate and rich scenario with respect to the once generally assumed, showing how different electronic and magnetic states may be generated and controlled in this fascinating class of materials.

cond-mat.mes-hall↗