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Stefano Sanvito

Publications and source records attributed to Stefano Sanvito.

At least 145 records · Page 8Linked to original sources
arXiv2008

Electronic properties of bulk and thin film SrRuO$_3$: a search for the metal-insulator transition

We calculate the properties of the 4$d$ ferromagnet SrRuO$_3$ in bulk and thin film form with the aim of understanding the experimentally observed metal to insulator transition at reduced thickness. Although the spatial extent of the 4$d$ orbitals is quite large, many experimental results have suggested that electron-electron correlations play an important role in determining this material's electronic structure. In order to investigate the importance of correlation, we use two approaches which go beyond the conventional local density approximation to density functional theory (DFT): the local spin density approximation + Hubbard $U$ (LSDA+$U$) and the pseudopotential self-interaction correction (pseudo-SIC) methods. We find that the details of the electronic structure predicted with the LSDA do not agree with the experimental spectroscopic data for bulk and thin film SrRuO$_3$. Improvement is found by including electron-electron correlations, and we suggest that bulk orthorhombic SrRuO$_3$ is a {\it weakly strongly-correlated} ferromagnet whose electronic structure is best described by a 0.6 eV on-site Hubbard term, or equivalently with corrections for the self-interaction error. We also perform {\it ab initio} transport calculations that confirm that SrRuO$_3$ has a negative spin polarization at the Fermi level, due to the position of the minority Ru 4$d$ band center. Even with correlations included in our calculations we are unable to reproduce the experimentally observed metal-insulator transition, suggesting that the electronic behavior of SrRuO$_3$ ultra-thin films might be dominated by extrinsic factors such as surface disorder and defects.

cond-mat.mtrl-sci↗
arXiv2008

Exploring the limits of the self consistent Born approximation for inelastic electronic transport

The non equilibrium Green function formalism is today the standard computational method for describing elastic transport in molecular devices. This can be extended to include inelastic scattering by the so called self-consistent Born approximation (SCBA), where the interaction of the electrons with the vibrations of the molecule is assumed to be weak and it is treated perturbatively. The validity of such an assumption and therefore of the SCBA is difficult to establish with certainty. In this work we explore the limitations of the SCBA by using a simple tight-binding model with the electron-phonon coupling strength $\rmα$ chosen as a free parameter. As model devices we consider Au mono-atomic chains and a $\rm{H_2}$ molecule sandwiched between Pt electrodes. In both cases our self-consistent calculations demonstrate a breakdown of the SCBA for large $\rmα$ and we identify a weak and strong coupling regime. For weak coupling our SCBA results compare closely with those obtained with exact scattering theory. However in the strong coupling regime large deviations are found. In particular we demonstrate that there is a critical coupling strength, characteristic of the materials system, beyond which multiple self-consistent solutions can be found depending on the initial conditions in the simulation. We attribute these features to the breakdown of the perturbative expansion leading to the SCBA.

cond-mat.other↗
arXiv2007

On the Newtonian origin of the spin motive force in ferromagnetic atomic wires

We demonstrate numerically the existence of a spin-motive force acting on spin-carriers when moving in a time and space dependent internal field. This is the case of electrons in a one-dimensional wires with a precessing domain wall. The effect can be explained solely by considering adiabatic dynamics and it is shown to exist for both classical and quantum systems.

cond-mat.mtrl-sci↗
arXiv2007

Accurate self-energy algorithm for quasi-1D systems

We present a complete prescription for the numerical calculation of surface Green's functions and self-energies of semi-infinite quasi-onedimensional systems. Our work extends the results of Sanvito et al. [1] generating a robust algorithm to be used in conjunction with ab initio electronic structure methods. We perform a detailed error analysis of the scheme and find that the highest accuracy is found if no inversion of the usually ill conditioned hopping matrix is involved. Even in this case however a transformation of the hopping matrix that decreases its condition number is needed in order to limit the size of the imaginary part of the wave-vectors. This is done in two different ways, either by applying a singular value decomposition and setting a lowest bound for the smallest singular value, or by adding a random matrix of small amplitude. By using the first scheme the size of the Hamiltonian matrix is reduced, making the computation considerably faster for large systems. For most energies the method gives high accuracy, however in the presence of surface states the error diverges due to the singularity in the self-energy. A surface state is found at a particular energy if the set of solution eigenvectors of the infinite system is linearly dependent. This is then used as a criterion to detect surface states, and the error is limited by adding a small imaginary part to the energy. [1] S. Sanvito, C. J. Lambert, J. H. Jefferson, and A. M. Bratkovsky, Phys. Rev. B 59, 11936 (1999).

cond-mat.mtrl-sci↗
arXiv2007

On-site approximation for spin-orbit coupling in LCAO density functional methods

We propose a computational method that simplifies drastically the inclusion of spin-orbit interaction in density functional theory implemented on localised atomic orbital basis sets. Our method is based on a well-known procedure for obtaining pseudopotentials from atomic relativistic 'ab initio' calculations and on an on-site approximation for the spin-orbit matrix elements. We have implemented the technique in the SIESTA code, and we show that it provides accurate results for the overall band structure and splittings of group IV and III-IV semiconductors as well as for 5d metals.

cond-mat.mtrl-sci↗
arXiv2007

Functionalized nanopore-embedded electrodes for rapid DNA sequencing

The determination of a patient's DNA sequence can, in principle, reveal an increased risk to fall ill with particular diseases [1,2] and help to design "personalized medicine" [3]. Moreover, statistical studies and comparison of genomes [4] of a large number of individuals are crucial for the analysis of mutations [5] and hereditary diseases, paving the way to preventive medicine [6]. DNA sequencing is, however, currently still a vastly time-consuming and very expensive task [4], consisting of pre-processing steps, the actual sequencing using the Sanger method, and post-processing in the form of data analysis [7]. Here we propose a new approach that relies on functionalized nanopore-embedded electrodes to achieve an unambiguous distinction of the four nucleic acid bases in the DNA sequencing process. This represents a significant improvement over previously studied designs [8,9] which cannot reliably distinguish all four bases of DNA. The transport properties of the setup investigated by us, employing state-of-the-art density functional theory together with the non-equilibrium Green's Function method, leads to current responses that differ by at least one order of magnitude for different bases and can thus provide a much more robust read-out of the base sequence. The implementation of our proposed setup could thus lead to a viable protocol for rapid DNA sequencing with significant consequences for the future of genome related research in particular and health care in general.

physics.bio-ph↗
arXiv2006

Resonant magnetoresistance in organic spin-valves

We investigate theoretically the effects of surface states over the magnetoresistance of Ni-based organic spin-valves. In particular we perform {\it ab initio} electronic transport calculations for a benzene-thiolate molecule chemically attached to a Ni [001] surface and contacted either by Te to another Ni [001] surface, or terminated by a thiol group and probed by a Ni STM tip. In the case of S- and Te-bonded molecules we find a large asymmetry in the spin-currents as a function of the bias, although the $I$-$V$ is rather symmetric. This leads to a smooth although not monotonic dependence of the magnetoresistance over the bias. In contrast, in the case of a STM-type geometry we demonstrate that the spin-current and the magnetoresistance can be drastically changed with bias. This is the result of a resonance between a spin-polarized surface state of the substrate and the $d$-shell band-edge of the tip.

cond-mat.mtrl-sci↗
arXiv2006

Molecular-Spintronics: the art of driving spin through molecules

Spintronics is the ability of injecting, manipulating and detecting electron spins into solid state systems. Molecular-electronics investigates the possibility of making electronic devices using organic molecules. Traditionally these two burgeoning areas have lived separate lives, but recently a growing number of experiments have indicated a possible pathway towards their integration. This is the playground for molecular-spintronics, where spin-polarized currents are carried through molecules, and in turn they can affect the state of the molecule. We review the most recent advances in molecular-spintronics. In particular we discuss how a fully quantitative theory for spin-transport in nanostructures can offer fundamental insights into the main factors affecting spin-transport at the molecular level, and can help in designing novel concept devices.

cond-mat.mtrl-sci↗
arXiv2006

Ab initio study on the magneto-structural properties of MnAs

The magnetic and structural properties of MnAs are studied with ab initio methods, and by mapping total energies onto a Heisenberg model. The stability of the different phases is found to depend mainly on the volume and on the amount of magnetic order, confirming previous experimental findings and phenomenological models. It is generally found that for large lattice constants the ferromagnetic state is favored, whereas for small lattice constants different antiferromagnetic states can be stabilized. In the ferromagnetic state the structure with minimal energy is always hexagonal, whereas it becomes orthorhombically distorted if there is an antiferromagnetic component in the hexagonal plane. For the paramagnetic state the stable cell is found to be orthorhombic up to a critical lattice constant of about 3.7 Angstrom, above which it remains hexagonal. This leads to the second order structural phase transition between paramagnetic states at about 400 K, where the lattice parameter increases above this critical value with rising temperature due to the thermal expansion. For the paramagnetic state an analytic approximation for the magnitude of the orthorhombic distortion as a function of the lattice constant is given. Within the mean field approximation the dependence of the Curie temperature on the volume and on the orthorhombic distortion is calculated. For orthorhombically distorted cells the Curie temperature is much smaller than for hexagonal cells. This is mainly due to the fact that some of the exchange coupling constants in the hexagonal plane become negative for distorted cells. With these results a description of the susceptibility as function of temperature is given.

cond-mat.mtrl-sci↗
arXiv2006

Magneto-mechanical interplay in spin-polarized point contacts

We investigate the interplay between magnetic and structural dynamics in ferromagnetic atomic point contacts. In particular, we look at the effect of the atomic relaxation on the energy barrier for magnetic domain wall migration and, reversely, at the effect of the magnetic state on the mechanical forces and structural relaxation. We observe changes of the barrier height due to the atomic relaxation up to 200%, suggesting a very strong coupling between the structural and the magnetic degrees of freedom. The reverse interplay is weak, i.e. the magnetic state has little effect on the structural relaxation at equilibrium or under non-equilibrium, current-carrying conditions.

cond-mat.mes-hall↗
arXiv2005

Current-driven magnetic rearrangements in spin-polarized point contacts

A new method for investigating the dynamics of atomic magnetic moments in current-carrying magnetic point contacts under bias is presented. This combines the non-equilibrium Green's function (NEGF) method for evaluating the current and the charge density with a description of the dynamics of the magnetization in terms of quasistatic thermally-activated transitions between stationary configurations. This method is then implemented in a tight-binding (TB) model with parameters chosen to simulate the main features of the electronic structures of magnetic transition metals. We investigate the domain wall (DW) migration in magnetic monoatomic chains sandwiched between magnetic leads, and for realistic parameters find that collinear arrangement of the magnetic moments of the chain is always favorable. Several stationary magnetic configurations are identified, corresponding to a different number of Bloch walls in the chain and to a different current. The relative stability of these configurations depends on the geometrical details of the junction and on the bias, however we predict transitions between different configurations with activation barriers of the order of a few tens of meV. Since different magnetic configurations are associated to different resistances, this suggests an intrinsic random telegraph noise at microwave frequencies in the I-V characteristics of magnetic atomic point contacts at room temperature. Finally, we investigate whether or not current induced torques are conservative.

cond-mat.mes-hall↗
arXiv2004

Self-interaction effects in (Ga,Mn)As and (Ga,Mn)N

The electronic structures of Mn-doped zincblende GaAs and wurtzite GaN are calculated using both standard local-density functional theory (LSDA), and a novel pseudopotential self-interaction-corrected approach (pseudo-SIC), able to account for the effects of strong correlation. We find that, as expected, the self-interaction is not strong in (Ga,Mn)As, because the Fermi energy is crossed by weakly correlated As p - Mn d hybridized bands and the Mn 3d character is distributed through the whole valence band manifold. This result validates the extensive literature of LSDA studies on (Ga,Mn)As, including the conclusion that the ferromagnetism is hole-mediated. In contrast, the LSDA gives a qualitatively incorrect band structure for (Ga,Mn)N, which is characterized by localized Mn 3d bands with very strong self-interaction. Our pseudo-SIC calculations show a highly confined hole just above the Fermi energy in the majority band manifold. Such a band arrangement is consistent with (although by no means conclusive evidence for) a recent suggestion that formation of Zhang-Rice magnetic polarons is responsible for hole-mediated ferromagnetism in (Ga,Mn)N.

cond-mat.mes-hall↗
arXiv2004

Different origin of the ferromagnetic order in (Ga,Mn)As and (Ga,Mn)N

The mechanism for the ferromagnetic order of (Ga,Mn)As and (Ga,Mn)N is extensively studied over a vast range of Mn concentrations. We calculate the electronic structures of these materials using density functional theory in both the local spin density approximation and the LDA+U scheme, that we have now implemented in the code SIESTA. For (Ga,Mn)As, the LDA+U approach leads to a hole mediated picture of the ferromagnetism, with an exchange constant $Nβ$ =~ -2.8 eV. This is smaller than that obtained with LSDA, which overestimates the exchange coupling between Mn ions and the As $p$ holes. In contrast, the ferromagnetism in wurtzite (Ga,Mn)N is caused by the double-exchange mechanism, since a hole of strong $d$ character is found at the Fermi level in both the LSDA and the LDA+U approaches. In this case the coupling between the Mn ions decays rapidly with the Mn-Mn separation. This suggests a two phases picture of the ferromagnetic order in (Ga,Mn)N, with a robust ferromagnetic phase at large Mn concentration coexisting with a diluted weak ferromagnetic phase.

cond-mat.mtrl-sci↗
arXiv2003

Contact-induced spin polarization in carbon nanotubes

Motivated by the possibility of combining spintronics with molecular structures, we investigate the conditions for the appearance of spin-polarization in low-dimensional tubular systems by contacting them to a magnetic substrate. We derive a set of general expressions describing the charge transfer between the tube and the substrate and the relative energy costs. The mean-field solution of the general expressions provides an insightful formula for the induced spin-polarization. Using a tight-binding model for the electronic structure we are able to estimate the magnitude and the stability of the induced moment. This indicates that a significant magnetic moment in carbon nanotubes can be observed.

cond-mat.mes-hall↗
arXiv2001

Ab-initio transport theory for digital ferromagnetic heterostructures

MnAs/GaAs superlattices, made by $δ$-doping GaAs with Mn, are known as digital ferromagnetic heterostructures. Here we present a theoretical density functional study of the electronic, magnetic and transport properties of such heterostructures. In the absence of intrinsic donors these systems show an half metallic density of states, with an exchange interaction much stronger than that of a random alloy with the same Mn concentration. {\it Ab initio} ballistic transport calculations show that the carriers with energies close to the Fermi energy are strongly confined within a few monolayers around the MnAs plane. This strong confinement is responsible for the large exchange coupling. Therefore the system can be described as a two dimensional half metal with large conductance in the MnAs plane and small conductance in the perpendicular direction.

cond-mat.mtrl-sci↗
arXiv2000

Do As antisites destroy the ferromagnetism of (Ga,Mn)As?

The effect of the inclusion of As antisites in the diluted magnetic semiconductor (Ga,Mn)As is studied within density functional theory in the local spin density approximation. In the case of homogeneous distribution of Mn ions we find that the ferromagnetism is largely weakened by the presence of the antisites. This is due to compensation of the free holes which mediate the long range ferromagnetic order. In contrast, when two Mn ions are coupled through only one As ion, ferromagnetic and antiferromagnetic order compete. In this case the magnetic ground state depends on: i) the position of the As antisites relative to the Mn, and ii) the As antisite concentration. We explain our results using a model of competing antiferromagnetic super-exchange and ferromagnetic double-exchange via localized Zener carriers. The strong dependence of the ferromagnetic order on the microscopic configuration accounts for the large variation in experimental data

cond-mat.mtrl-sci↗
arXiv2000

First principles study of the origin and nature of ferromagnetism in (Ga,Mn)As

The properties of diluted Ga$_{1-x}$Mn$_x$As are calculated for a wide range of Mn concentrations within the local spin density approximation of density functional theory. Mülliken population analyses and orbital-resolved densities of states show that the configuration of Mn in GaAs is compatible with either 3d$^5$ or 3d$^6$, however the occupation is not integer due to the large $p$-$d$ hybridization between the Mn $d$ states and the valence band of GaAs. The spin splitting of the conduction band of GaAs has a mean field-like linear variation with the Mn concentration and indicates ferromagnetic coupling with the Mn ions. In contrast the valence band is antiferromagnetically coupled with the Mn impurities and the spin splitting is not linearly dependent on the Mn concentration. This suggests that the mean field approximation breaks down in the case of Mn-doped GaAs and corrections due to multiple scattering must be considered. We calculate these corrections within a simple free electron model and find good agreement with our {\it ab initio} results if a large exchange constant ($Nβ=-4.5$eV) is assumed.

cond-mat.mes-hall↗