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Stefano Vespucci

Publications and source records attributed to Stefano Vespucci.

3 recordsLinked to original sources

Gap-free Information Transfer in 4D-STEM via Fusion of Complementary Scattering Channels

Linear phase-contrast scanning transmission electron microscopy (STEM) techniques compatible with high-throughput 4D-STEM acquisition are widely used to enhance phase contrast in weakly scattering and beam-sensitive materials. In these modalities, contrast transfer is often suppressed at low spatial frequencies, resulting in a characteristic contrast gap that limits quantitative imaging. Approaches that retain low-frequency phase contrast exist but typically require substantially increased experimental complexity, restricting routine use. Dark-field STEM imaging captures this missing low-frequency information through electrons scattered outside the bright-field disk, but discards a large fraction of the scattered signal and is therefore dose-inefficient. Fused Full-field STEM (FF-STEM) is introduced as a 4D-STEM imaging modality that overcomes this limitation by combining ptychographic phase reconstruction with tilt-corrected dark-field imaging within a single acquisition. Bright-field data are used to estimate probe aberrations and reconstruct a high-resolution phase image, while dark-field data provide complementary low-frequency contrast. The two channels are optimally fused in Fourier space using minimum-variance weighting based on the spectral signal-to-noise ratio, yielding transfer-gap-free images with high contrast and quantitative fidelity. FF-STEM preserves the upsampling and depth-sectioning capabilities of ptychography, adds robust low-frequency contrast characteristic of dark-field imaging, and enables dose-efficient, near-real-time reconstruction.

physics.optics

Cepstral Strain Mapping for Small Pixel-Count Detectors

With the decreasing sizes of integrated-circuit components, the semiconductor industry is in growing need of high-throughput strain mapping techniques that offer high precision and spatial resolution, with desired industry goals of 0.01-0.1% and 1 nm respectively. As the fundamental limitation on the measurement precision is set by the Poisson noise, pixel array detectors with high saturation current, high dynamic range and fast readout are ideally suited for this purpose. However, due to the limited pixel count on these detectors, they do not work well with traditional strain mapping algorithms that were optimized to work on datasets with a large pixel count. Here, we evaluate the cepstral transform that was designed to address this problem, with the precision determined by the convergence, collection angles and dose while remaining insensitive to the pixel count. We test the performance of our method on silicon wedges and Si-SiGe multilayers, and using datasets collected at different conditions, we show how the measured strain precision scales as a function of dose, aperture size and sample thickness. Using precession gives a further improvement in precision by about 1.5-2x, whereas energy filtering does not have a significant impact on the cepstral method for device-relevant sample thickness ranges.

physics.ins-det

Diffractive triangulation of radiative point sources

We describe a general method to determine the location of a point source of waves relative to a two-dimensional active pixel detector. Based on the inherent structural sensitivity of crystalline sensor materials, characteristic detector diffraction patterns can be used to triangulate the location of a wave emitter. As a practical application of the wide-ranging principle, a digital hybrid pixel detector is used to localize a source of electrons for Kikuchi diffraction pattern measurements in the scanning electron microscope. This provides a method to calibrate Kikuchi diffraction patterns for accurate measurements of microstructural crystal orientations, strains, and phase distributions.

physics.ins-det