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Stephan Reitzenstein

Publications and source records attributed to Stephan Reitzenstein.

At least 37 records · Page 2Linked to original sources

High Purcell enhancement in all-TMDC nanobeam resonator designs with active monolayers for nanolasers

We propose a nanobeam resonator incorporating an active monolayer, designed to achieve a high Purcell enhancement. The resonator is fully composed of transition-metal-dichalcogenide materials and intended to operate as a high-beta-factor nanolaser. A theoretical framework that models and optimizes the Purcell enhancement associated with the emission from atomically thin layers is developed. This framework is based on a resonance expansion, enabling spectral resolution of physical quantities governed by high-Q resonances. The numerical optimization of the resonator leads to the presence of a high-Q resonance supporting a strong electric field confinement in the monolayer to maximize the modal gain.

physics.optics

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Semiconductor quantum dots (QDs) are key building blocks for photonic quantum technologies, enabling practical sources of non-classical light. A central challenge for scalable integration is the direct epitaxial growth of high-quality emitters on industry-compatible silicon platforms. Furthermore, for long-distance fiber-based quantum communication, emission in the telecom O- or C-band is essential. Here, we demonstrate the direct growth of high-quality InGaAs/GaAs QDs emitting in the telecom O-band using a strain-reducing layer approach on silicon. Deterministic integration of individual QDs into circular Bragg grating resonators is achieved via in-situ electron-beam lithography. The resulting devices exhibit strong out-coupling enhancement, with photon extraction efficiencies up to $(40 \pm 2)\%$, in excellent agreement with numerical simulations. These results highlight the high material quality of both the epitaxial platform and the photonic nanostructure, as well as the precise lateral positioning of the emitter within 20~nm of the resonator center. At cryogenic temperature (4~K) and low excitation power ($0.027\times P_\text{sat}$), the devices show excellent single-photon purity, exceeding 99\%. Operation at elevated temperatures of 40~K and 77~K, compatible with compact Stirling cryo-coolers and liquid-nitrogen cooling, reveals robust performance, with single-photon purity maintained at $(88.4 \pm 0.6)\%$ at 77~K. These results demonstrate a practical and scalable route toward silicon-based quantum light sources and provide a promising path for cost-effective fabrication and seamless integration of quantum photonics with classical electronics, representing an important step toward large-scale, chip-based quantum information systems.

cond-mat.mes-hall

Deterministic nanofabrication of quantum dot-circular Bragg grating resonators with high process yield using in-situ electron beam lithography

The controlled integration of quantum dots (QDs) as single-photon emitters into quantum light sources is essential for the implementation of large-scale quantum networks. In this study, we employ the deterministic in-situ electron-beam lithography (iEBL) nanotechnology platform to integrate individual QDs with high accuracy and process yield into circular Bragg grating (CBG) resonators. Notably, CBG devices comprising just 3 to 4 rings exhibit photon extraction efficiencies comparable to those of structures with more rings. This facilitates faster fabrication, reduces the device footprint, and enables compatibility with electrical contacting. To demonstrate the scalability of this process, we present results of 95 optically active QD-CBG devices fabricated across two lithography sessions. These devices exhibit bright, narrow-linewidth single-photon emission with excellent optical quality. To evaluate QD placement accuracy, we apply a powerful characterization technique that combines cathodoluminescence (CL) mapping and scanning electron microscopy. Statistical analysis of these devices reveals that our iEBL approach enables high alignment accuracy and a process yield of over >90% across various CBG geometries. Our findings highlight a reliable route toward the scalable fabrication of high-performance QD-based single-photon sources for use in photonic quantum technology applications.

cond-mat.mes-hall

High Clockrate Free-space Optical In-Memory Computing

The ability to process and act on data in real time is increasingly critical for applications ranging from autonomous vehicles, three-dimensional environmental sensing and remote robotics. However, the deployment of deep neural networks (DNNs) in edge devices is hindered by the lack of energy-efficient scalable computing hardware. Here, we introduce a fanout spatial time-of-flight optical neural network (FAST-ONN) that calculates billions of convolutions per second with ultralow latency and power consumption. This is enabled by the combination of high-speed dense arrays of vertical-cavity surface-emitting lasers (VCSELs) for input modulation with spatial light modulators of high pixel counts for in-memory weighting. In a three-dimensional optical system, parallel differential readout allows signed weight values accurate inference in a single shot. The performance is benchmarked with feature extraction in You-Only-Look-Once (YOLO) for convolution at 100 million frames per second (MFPS), and in-system backward propagation training with photonic reprogrammability. The VCSEL transmitters are implementable in any free-space optical computing systems to improve the clockrate to over gigahertz. The high scalability in device counts and channel parallelism enables a new avenue to scale up free space computing hardware.

cs.ET

Interplay of energy and charge transfer in WSe2/CrSBr heterostructures

Van der Waals heterostructures (vdWHs) composed of transition-metal dichalcogenides (TMDs) and layered magnetic semiconductors offer great opportunities to manipulate exciton and valley properties of TMDs. Here, we present magneto-photoluminescence (PL) studies in a WSe2 monolayer (ML) on a CrSBr crystal, an anisotropic layered antiferromagnetic semiconductor. Our results reveal unique behavior of each of the ML-WSe2 PL peaks under magnetic field that is distinct from the pristine case. An intriguing feature is the clear enhancement of the PL intensity that we observe each time the external magnetic field tunes the energy of an exciton in CrSBr into resonance with one of the optical states of WSe2. This result suggests a magnetic field-controlled resonant energy transfer (RET) beyond other effects reported in similar structures. Our work provides deep insight on the importance of different mechanisms into magnetic vdWHs and underscores its great potential for light harvesting and emission enhancement of two-dimensional materials.

cond-mat.mtrl-sci

Enhancement of Indistinguishable Photon Emission from a GaAs Quantum Dot via Charge Noise Suppression

The generation of indistinguishable single photons is a fundamental requirement for future quantum technologies, particularly in quantum repeater networks and for distributed quantum computing based on entanglement distribution. However, spectral jitter, often induced by charge noise in epitaxial quantum dots, leads to exciton dephasing, thereby limiting their practical usage in quantum applications. We present a straightforward approach to mitigate charge noise-induced decoherence in droplet-etched GaAs quantum dots embedded in an n-i-p diode structure and integrated deterministically into an electrically contacted circular Bragg grating resonator for emission enhancement. The quantum device allows for the stabilization of the charge environment by applying an external electrical field while producing a photon extraction efficiency of approximately (37 +- 2)%. Hong-Ou-Mandel two-photon interference measurements reveal a strong voltage dependence of the exciton dephasing time and interference visibility on the applied bias in excellent agreement with our theoretical predictions. Notably, the reduction in visibility from a maximum, charge-stabilized corrected value of 97 percent at the optimum bias point follows an inverse square dependence (proportional to 1/I^2) with increasing diode current (I) in forward direction. Under a quasi-resonant excitation scheme, we achieve a maximum exciton dephasing time (T2*) of approximately (6.8 +-0.5) ns, reaching nearly the Fourier limit (T2 = 2T1) without the need for complex echo schemes like Ramsey or Carr-Purcell-Meiboom-Gill sequences. These findings are consistent with theoretical predictions from rate equation modeling and quantum optical analysis as well as voltage-dependent linewidth measurements, demonstrating optimized electrical control of exciton dephasing.

cond-mat.mes-hall

Resonant and Anti-resonant Exciton-Phonon Coupling in Quantum Dot Molecules

Optically active quantum dot molecules (QDMs) can host multi-spin quantum states with the potential for the deterministic generation of photonic graph states with tailored entanglement structures. Their usefulness for the generation of such non-classical states of light is determined by orbital and spin decoherence mechanisms, particularly phonon-mediated processes dominant at energy scales up to a few millielectronvolts. Here, we directly measure the spectral function of orbital phonon relaxation in a QDM and benchmark our findings against microscopic kp theory. Our results reveal phonon-mediated relaxation rates exhibiting pronounced resonances and anti-resonances, with rates ranging from several ten ns$^{-1}$ to tens of $μ$s$^{-1}$. Comparison with a kinetic model reveals the voltage (energy) dependent phonon coupling strength and fully explains the interplay between phonon-assisted relaxation and radiative recombination. These anti-resonances can be leveraged to increase the lifetime of energetically unfavorable charge configurations needed for realizing efficient spin-photon interfaces and multi-dimensional cluster states.

cond-mat.mes-hall

Model-free front-to-end training of a large high performance laser neural network

Artificial neural networks (ANNs), have become ubiquitous and revolutionized many applications ranging from computer vision to medical diagnoses. However, they offer a fundamentally connectionist and distributed approach to computing, in stark contrast to classical computers that use the von Neumann architecture. This distinction has sparked renewed interest in developing unconventional hardware to support more efficient implementations of ANNs, rather than merely emulating them on traditional systems. Photonics stands out as a particularly promising platform, providing scalability, high speed, energy efficiency, and the ability for parallel information processing. However, fully realized autonomous optical neural networks (ONNs) with in-situ learning capabilities are still rare. In this work, we demonstrate a fully autonomous and parallel ONN using a multimode vertical cavity surface emitting laser (VCSEL) using off-the-shelf components. Our ONN is highly efficient and is scalable both in network size and inference bandwidth towards the GHz range. High performance hardware-compatible optimization algorithms are necessary in order to minimize reliance on external von Neumann computers to fully exploit the potential of ONNs. As such we present and extensively study several algorithms which are broadly compatible with a wide range of systems. We then apply these algorithms to optimize our ONN, and benchmark them using the MNIST dataset. We show that our ONN can achieve high accuracy and convergence efficiency, even under limited hardware resources. Crucially, we compare these different algorithms in terms of scaling and optimization efficiency in term of convergence time which is crucial when working with limited external resources. Our work provides some guidance for the design of future ONNs as well as a simple and flexible way to train them.

cs.LG

On-demand storage and retrieval of single photons from a semiconductor quantum dot in a room-temperature atomic vapor memory

Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate on-demand storage and retrieval of single photons from a semiconductor quantum dot device in a room-temperature atomic vapor memory. A deterministically fabricated InGaAs quantum dot light source emits single photons at the wavelength of the cesium D1 line at 895\,nm which exhibit an inhomogeneously broadened linewidth of 5.1(7)\,GHz and are subsequently stored in a low-noise ladder-type cesium vapor memory. We show control over the interaction between the single photons and the atomic vapor, allowing for variable retrieval times of up to 19.8(3)\,ns at an internal efficiency of $η_\mathrm{int}=0.6(1)\%$. Our results significantly expand the application space of both room-temperature vapor memories and semiconductor quantum dots in future quantum network architectures.

quant-ph

Experimental reservoir computing with diffractively coupled VCSELs

We present experiments on reservoir computing (RC) using a network of vertical-cavity surface-emitting lasers (VCSELs) that we diffractively couple via an external cavity. Our optical reservoir computer consists of 24 physical VCSEL nodes. We evaluate the system's memory and solve the 2-bit XOR task and the 3-bit header recognition (HR) task with bit error ratios (BERs) below 1\,\% and the 2-bit digital-to-analog conversion (DAC) task with a root-mean-square error (RMSE) of 0.067.

cs.ET

Room-temperature ladder-type optical memory compatible with single photons from InGaAs quantum dots

On-demand storage and retrieval of quantum information in coherent light-matter interfaces is a key requirement for future quantum networking and quantum communication applications. Alkali vapor memories offer scalable and robust high-bandwidth storage at high repetition rates which makes them a natural fit to interface with solid-state single-photon sources. Here, we experimentally realize a room-temperature ladder-type atomic vapor memory that operates on the Cs D1 line. We provide a detailed experimental characterization and demonstration of on-demand storage and retrieval of weak coherent laser pulses with 0.06 photons per pulse at a high signal-to-noise ratio of SNR$=830(80)$. The memory achieves a maximum internal storage efficiency of $η_{\text{int}}=15(1)\%$ and an estimated $1/e$-storage time of $τ_{\mathrm{s}}\approx32\,$ns. Benchmark properties for the storage of single photons from inhomogeneously broadened state-of-the-art solid-state emitters are estimated from the performance of the memory. Together with the immediate availability of high-quality InGaAs quantum dots emitting at 895\,nm, these results provide clear prospects for the development of a heterogeneous on-demand quantum light interface.

quant-ph

Electrical manipulation of intervalley trions in twisted MoSe$_2$ homobilayers at room temperature

The impressive physics and applications of intra- and interlayer excitons in a transition metal dichalcogenide twisted-bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrical fields. This work studies the electrical control of excitonic complexes in twisted MoSe$_2$ homobilayer devices at room temperature. Gate-dependent micro-photoluminescence spectroscopy reveals an energy tunability of several meVs originating from the emission of excitonic complexes. Furthermore, our study investigates the twist-angle dependence of valley properties by fabricating devices with stacking angles of $θ\sim1\degree$, $θ\sim4\degree$ and $θ\sim18\degree$. Strengthened by density functional theory calculations, the results suggest that, depending on the twist angle, the conduction band minima and hybridized states at the \textbf{Q}-point promote the formation of intervalley hybrid trions involving the \textbf{Q}-and \textbf{K}-points in the conduction band and the \textbf{K}-point in the valence band. By revealing the gate control of exciton species in twisted homobilayers, our findings open new avenues for engineering multifunctional optoelectronic devices based on ultrathin semiconducting systems.

cond-mat.mtrl-sci

Annealing-inspired training of an optical neural network with ternary weights

Artificial neural networks (ANNs) represent a fundamentally connectionnist and distributed approach to computing, and as such they differ from classical computers that utilize the von Neumann architecture. This has revived research interest in new unconventional hardware to enable more efficient implementations of ANNs rather than emulating them on traditional machines. In order to fully leverage the capabilities of this new generation of ANNs, optimization algorithms that take into account hardware limitations and imperfections are necessary. Photonics represents a particularly promising platform, offering scalability, high speed, energy efficiency, and the capability for parallel information processing. Yet, fully fledged implementations of autonomous optical neural networks (ONNs) with in-situ learning remain scarce. In this work, we propose a ternary weight architecture high-dimensional semiconductor laser-based ONN. We introduce a simple method for achieving ternary weights with Boolean hardware, significantly increasing the ONN's information processing capabilities. Furthermore, we design a novel in-situ optimization algorithm that is compatible with, both, Boolean and ternary weights, and provide a detailed hyperparameter study of said algorithm for two different tasks. Our novel algorithm results in benefits, both in terms of convergence speed and performance. Finally, we experimentally characterize the long-term inference stability of our ONN and find that it is extremely stable with a consistency above 99\% over a period of more than 10 hours, addressing one of the main concerns in the field. Our work is of particular relevance in the context of in-situ learning under restricted hardware resources, especially since minimizing the power consumption of auxiliary hardware is crucial to preserving efficiency gains achieved by non-von Neumann ANN implementations.

cs.ET

Probing Noncentrosymmetric 2D Materials by Fourier Space Second Harmonic Imaging

The controlled assembly of twisted 2D structures requires precise determination of the crystal orientation of their component layers. In the established procedure, the second-harmonic generation (SHG) intensity of a noncentrosymmetric layer is recorded while rotating the polarization of both the incident laser field and detected SHG, which can be time-consuming and tedious. Here, we demonstrate that the crystal orientation of transition metal dichalcogenides and hexagonal boron nitride can be directly determined by recording SHG images generated by tightly focused laser beams in Fourier space. Using an azimuthally polarized laser beam, the SHG image distinctly reflects the hexagonal structure of the crystal lattice, revealing its orientation quickly and accurately. This technique could significantly impact the field of twistronics, which studies the effects of the relative angle between the layers of a stacked 2D structure, as well as advances the nanofabrication of 2D materials.

physics.optics

Bright electrically contacted circular Bragg grating resonators with deterministically integrated quantum dots

Cavity-enhanced emission of electrically controlled semiconductor quantum dots is essential in developing bright quantum devices for real-world quantum photonic applications. Combining the circular Bragg grating (CBG) approach with a PIN-diode structure, we propose and implement an innovative concept for ridge-based electrically-contacted CBG resonators. Through fine-tuning of device parameters in numerical simulations and deterministic nanoprocessing, we produced electrically controlled single quantum dot CBG resonators with excellent electro-optical emission properties. These include multiple wavelength-tunable emission lines and a photon extraction efficiency (PEE) of up to (30.4$\pm$3.4)%, where refined numerical optimization based on experimental findings suggests a substantial improvement, promising PEE >50%. Additionally, the developed quantum light sources yield single-photon purity reaching (98.8$\pm$0.2)% [post-selected: (99.5$\pm$0.3)%] and a photon indistinguishability of (25.8$\pm$2.1)% [post-selected: (92.8$\pm$4.8)%]. Our results pave the way for high-performance quantum devices with combined cavity enhancement and deterministic charge-environment controls, advancing the development of photonic quantum information systems such as complex quantum repeater networks.

cond-mat.mes-hall

Enhancement of interlayer exciton emission in a TMDC heterostructure via a multi-resonant chirped microresonator up to room temperature

We report on multi-resonance chirped distributed Bragg reflector (DBR) microcavities. These systems are employed to investigate the light-mater interaction with both intra- and inter-layer excitons of transition metal dichalcogenide (TMDC) bilayer heterostructures. The chirped DBRs consisting of SiO2 and Si3N4 layers with gradually changing thickness exhibit a broad stopband with a width exceeding 600 nm. Importantly, and in contrast to conventional single-resonance microcavities, our structures provide multiple resonances across a broad spectral range, which can be matched to spectrally distinct resonances of the embedded TMDC heterostructures. We study cavity-coupled emission of both intra- and inter-layer excitons from an integrated WSe2/MoSe2 heterostructure in a chirped microcavity system. We observe an enhanced interlayer exciton emission with a Purcell factor of 6.67 +- 1.02 at 4 K. Additionally, we take advantage of cavity-enhanced emission of the interlayer exciton to investigate its temperature-dependent luminescence lifetime, which yields a value of 60 ps at room temperature. Our approach provides an intriguing platform for future studies of energetically distant and confined excitons in different semiconducting materials, which paves the way for various applications such as microlasers and single-photon sources by enabling precise control and manipulation of excitonic interactions utilizing multimode resonance light-matter interaction.

cond-mat.mes-hall

Assessing the alignment accuracy of state-of-the-art deterministic fabrication methods for single quantum dot devices

The realization of efficient quantum light sources relies on the integration of self-assembled quantum dots (QDs) into photonic nanostructures with high spatial positioning accuracy. In this work, we present a comprehensive investigation of the QD position accuracy, obtained using two marker-based QD positioning techniques, photoluminescence (PL) and cathodoluminescence (CL) imaging, as well as using a marker-free in-situ electron beam lithography (in-situ EBL) technique. We employ four PL imaging configurations with three different image processing approaches and compare them with CL imaging. We fabricate circular mesa structures based on the obtained QD coordinates from both PL and CL image processing to evaluate the final positioning accuracy. This yields final position offset of the QD relative to the mesa center of $μ_x$ = (-40$\pm$58) nm and $μ_y$ = (-39$\pm$85) nm with PL imaging and $μ_x$ = (-39$\pm$30) nm and $μ_y$ = (25$\pm$77) nm with CL imaging, which are comparable to the offset $μ_x$ = (20$\pm$40) nm and $μ_y$ = (-14$\pm$39) nm obtained using the in-situ EBL method. We discuss the possible causes of the observed offsets, which are significantly larger than the QD localization uncertainty obtained from simply imaging the QD light emission from an unstructured wafer. Our study highlights the influences of the image processing technique and the subsequent fabrication process on the final positioning accuracy for a QD placed inside a photonic nanostructure.

physics.optics

In-situ spontaneous emission control of MoSe$_2$-WSe$_2$ interlayer excitons with near-unity quantum yield

Optical resonators are a powerful platform to control the spontaneous emission dynamics of excitons in solid-state nanostructures. Here, we study a MoSe$_2$-WSe$_2$ van-der-Waals heterostructure that is integrated in a widely tunable open optical microcavity to gain insights into fundamental optical properties of the emergent interlayer charge-transfer excitons. First, we utilize an ultra-low quality factor open planar vertical cavity and investigate the modification of the excitonic lifetime as on- and off-resonant conditions are met with consecutive longitudinal modes. Time-resolved photoluminescence measurements reveal that the interlayer exciton lifetime can thus be periodically tuned with an amplitude of 110 ps. The resulting oscillations of the interlayer exciton lifetime allows us to extract a 0.5 ns free-space radiative lifetime and a quantum efficiency as high as 81 \%. We subsequently engineer the local density of optical states by introducing a spatially confined and fully spectrally tunable Tamm-plasmon resonance. The dramatic redistribution of the local optical modes in this setting allows us to encounter a profound inhibition of spontaneous emission of the interlayer excitons by a factor of 3.2. We expect that specifically engineering the inhibition of radiation from moiré excitons is a powerful tool to steer their thermalization, and eventually their condensation into coherent condensate phases.

cond-mat.mtrl-sci