arXiv subjects

Stephane Mangin

Publications and source records attributed to Stephane Mangin.

18 recordsLinked to original sources

arXiv2026

Interface-Controlled Spin-Orbit Torques in Rare-Earth Synthetic Ferrimagnets Probed by Sagnac Magneto-Optics and Harmonic Hall Measurements

Spin-orbit torque (SOT) provides an efficient route for manipulating magnetization in spintronic devices, and its accurate quantification is essential. Here, we investigate Co/Gd-based synthetic ferrimagnets using complementary magnetotransport and magneto-optical techniques. We use a Sagnac magneto-optical interferometry method to directly quantify current-induced magnetization tilting and extract the damping-like SOT effective field. The Sagnac measurements show good agreement with harmonic Hall analysis across different Co/Gd and Gd/Pt/Co heterostructures, providing a quantitative determination of the damping-like SOT effective field that does not rely on electrical transport signatures. By varying the Gd thickness and multilayer stacking order, we demonstrate that the damping-like torque is strongly influenced by spin transport and angular momentum conversion at rare-earth and heavy-metal interfaces. The observation of a finite torque in Gd/Pt/Co/Pt structures, where conventional Pt spin Hall contributions are expected to compensate, highlights the active role of the Gd layer in SOT generation. Furthermore, interface engineering enables perpendicular magnetic anisotropy in Gd/Pt/Co/Al heterostructures with a 2-nm-thick Co layer, allowing current-induced SOT switching at current densities of 8-10 MA/cm$^2$. These results establish rare-earth-based synthetic ferrimagnets as a versatile platform for engineering spin-orbit phenomena and optimizing low-power spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Type-II-like ultrafast demagnetization behavior in NiCo2O4 thin films

Rare-earth-ferrimagnetic oxides are emerging as attractive platforms for investigating ultrafast spin dynamics. Here, we study the photoinduced magnetization dynamics of epitaxial NiCo2O4 (NCO) thin films by time-resolved magneto-optical Faraday effect using two independent pump-probe configurations: 1030/515 nm and 800/400 nm. In both measurements, photoexcitation induces an immediate reduction of the magneto-optical signal within the experimental time resolution, followed by a reproducible slower demagnetization component with a characteristic timescale of approximately 5-6 ps and a subsequent recovery on the ~100 ps timescale. Importantly, this picosecond demagnetization component is observed consistently across the two experimental configurations and excitation wavelengths, demonstrating that it is an intrinsic feature of the ultrafast magnetic response of NCO thin films. Because the earliest-time dip may contain a transient optical contribution, we describe the overall response as type-II-like, rather than assigning a definitive textbook type-II classification solely on the basis of the sub-resolution signal. These results establish a robust two-step ultrafast demagnetization behavior in NCO and highlight rare-earth-free oxide ferrimagnets as promising systems for exploring Mult sublattice spin dynamics on ultrafast timescales.

cond-mat.mtrl-sci↗

arXiv2026

Crystal structure effects on vortex dynamics in superconducting MgB$_2$ thin films

The current-driven resistive transition is central to superconducting single-photon detectors, transition-edge sensors, and fluxonic devices. Depending on sample uniformity, dimensions, and heat removal, it can be driven by phase-slip events, flux-flow instabilities (FFI), or normal-domain formation. Here, we investigate the influence of two types of microstructural defects on vortex dynamics in MgB$_2$ films: columnar growth in textured films and buffer-layer roughness in single-crystal films. The current-voltage ($I$-$V$) curves measured at $T \approx 0.25 T_\mathrm{c}$ for both films exhibit multiple steps. Time-dependent Ginzburg-Landau simulations reproduce the major features of the experimental $I$-$V$ curves and suggest that the resistive transitions for both films are mediated by the formation and growth of normal domains rather than FFI. The single-crystal film with buffer-layer roughness exhibits superconductivity breakdown at higher currents and pinning activation energies approximately twice those of the textured film, along with more pronounced multi-step features in the $I$-$V$ curves. These features are attributed to the combination of stronger pinning induced by lateral variations of the superconducting order parameter along the MgO buffer layer and its lower thermal boundary resistance. Our results show that both the film microstructure and the film-buffer interface are critical for the resistive transition, offering insights for superconducting devices requiring controlled dissipation at high transport currents.

cond-mat.supr-con↗

arXiv2026

Epitaxial Ni/Cu Superlattice Nanowires with Atomically Sharp Interfaces for Spin Transport

The importance of microstructure increases when decreasing the size of an object to the nanoscale, along with the complexity of controlling it. For instance, it is particularly complicated to create nano-object with controlled interfaces. Therefore, progressing towards 1D epitaxial nanostructures poses a challenge, and realization of their full potential is linked to technological issues of achieving large-scale, precise atom stacking of two or more different chemical elements. Achieving such coherent, epitaxial interfaces is a key step toward enabling spintronic phenomena in 1D objects, by minimizing interface scattering and strain-driven defects. Our results demonstrate a successful realization of controlled nanoscale heteroepitaxy in one-dimensional single-crystal structures. We fabricated nanowires composed of alternating magnetic (nickel) and non-magnetic, highly conductive (copper) segments. This periodic stacking modulates electron transport under magnetic stimuli. The epitaxial precision achieved eliminates detrimental electron scattering that has historically limited the magnetotransport properties of such 1D structures and hindered their development. Such materials are crucial for further advancements in the miniaturisation of nanosensors, actuators, and next-generation 3D spintronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Dimensionality Enhanced Out-of-Plane Spin Currents in NbIrTe$_4$ for Efficient Field-Free Switching of Perpendicular Magnetization

Efficient generation of out-of-plane (OOP) spin currents is crucial for advanced spintronic memory applications. However, the theoretical understanding and experimental implementation of robust OOP spin currents for high-density and low-power magnetization switching remain significant challenges of spintronics. Here, we demonstrate that transitioning NbIrTe$_4$ from a two-dimensional quantum spin Hall insulator to a three-dimensional type-II Weyl semimetal markedly enhances OOP spin current generation. The bulk topological Weyl semimetal nature of NbIrTe$_4$, characterized by its Weyl cone, significantly enhances the OOP spin Berry curvature, enabling an unprecedented OOP spin Hall conductivity exceeding $10^5\hbar/2e$ $\Omega^{-1}m^{-1} $. This enhancement, surpassing the in-plane component by more than fourfold, enables efficient and field-free spin-orbit torque (SOT) switching of perpendicular magnetization with a low current density of 1.4 MA/cm$^2$. The improved spin Hall conductivity reduces the overall power consumption by more than two orders of magnitude compared to existing systems, such as heavy metals. Our findings highlight the pivotal role of dimensionality in harnessing robust OOP spin currents in topological Weyl semimetals, paving the way for the development of high-density, low-power spintronic memory technologies.

cond-mat.mes-hall↗

arXiv2024

A Toffoli Gadget for Magnetic Tunnel Junctions Boltzmann Machines

Magnetic Tunnel Junctions (MTJs) are of great interest for non-conventional computing applications. The Toffoli gate is a universal reversible logic gate, enabling the construction of arbitrary boolean circuits. Here, we present a proof-of-concept construction of a gadget which encodes the Toffoli gate's truth table into the ground state of coupled uniaxial nanomagnets that could form the free layers of perpendicularly magnetized MTJs. This construction has three input bits, three output bits, and one ancilla bit. We numerically simulate the seven macrospins evolving under the stochastic Landau-Lifshitz-Gilbert (s-LLG) equation. We investigate the effect of the anisotropy-to-exchange-coupling strength ratio $H_A/H_\text{ex}$ on the working of the gadget. We find that for $H_A/H_\text{ex} \lesssim 0.93$, the spins evolve to the Toffoli gate truth table configurations under LLG dynamics alone, while higher $H_A/H_\text{ex}$ ratios require thermal annealing due to suboptimal metastable states. Under our chosen annealing procedure, the s-LLG simulation with thermal annealing achieves a 100% success rate up to $H_A/H_\text{ex}\simeq3.0$. The feasibility of constructing MTJ-free-layer-based Toffoli gates highlights their potential in designing new types of MTJ-based circuits.

cond-mat.mes-hall↗

arXiv2024

Picosecond all-optical switching of Co/Gd based synthetic ferrimagnets

Single pulse all-optical switching of magnetization (AOS) in Co/Gd based synthetic ferrimagnets carries promises for hybrid spintronic-photonic integration. A crucial next step progressing towards this vision is to gain insight into AOS and multi-domain state (MDS) behavior using longer pulses, which is compatible with state-of-the-art integrated photonics. In this work, we present our studies on the AOS and MDS of [Co/Gd]n (n = 1, 2) using ps optical pulses across a large composition range. We theoretically and experimentally show that a large Gd layer thickness can enhance the AOS energy efficiency and maximum pulse duration. We have identified two augmenting roles of Gd in extending the maximum pulse duration. On the inter-atomic level, we found that more Gd offers a prolonged angular momentum supply to Co. On the micromagnetic level, a higher Gd content brings the system to be closer to magnetic compensation in the equilibrized hot state, thereby reducing the driving force for thermally assisted nucleation of domain walls, combating the formation of a MDS. Our study presents a composition overview of AOS in [Co/Gd]n and offers useful physical insights regarding AOS fundamentals as well as the projected photonic integration.

cond-mat.mes-hall↗

arXiv2023

Influence of interlayer exchange coupling on ultrafast laser-induced magnetization reversal in ferromagnetic spin valves

In this study, we explore the influence of interlayer exchange coupling on magnetization reversal triggered by femtosecond laser pulses in ferromagnetic spin valves. Our experiments, focused on femtosecond laser-induced magnetization reversal, methodically vary the thickness of the copper (Cu) spacer layer. We identify a critical Cu thickness threshold at 2.32 nm. Above this threshold, a stable reversed magnetic domain is consistently generated upon exposure to a single laser pulse. Conversely, with a Cu spacer thinner than 2.32 nm, the observed magnetization reversal from parallel (P) to anti-parallel (AP) states occurs only under continuous laser irradiation. Once the laser is stopped, the magnetic configuration relaxes back to its initial P state, influenced by ferromagnetic exchange coupling. This research enhances our understanding of the mechanisms that drive optically induced ultrafast magnetization reversal in ferromagnetic spin valves.

cond-mat.mtrl-sci↗

arXiv2023

Extending the scope and understanding of all-optical magnetization switching in Gd-based alloys by controlling the underlying temperature transients

We use the thickness of Cu layers to control all-optical switching of magnetization in adjacent Gd$_{24}$(Fe$_9$0Co$_{10}$)$_{76}$ films. While increasing the Cu thickness from 5 to 900nm has no effect on the switching threshold, it significantly enlarges the fluence and pulse duration at which multiple domains emerge. Having shown that thermally activated multi-domain formation limits the maximum fluence and pulse duration for controlled switching, we demonstrate that continuous magnetization reversal precedes multi-domain formation in Gd$_{18}$Dy$_4$Co$_{78}$ films excited with fluences slightly larger than the multi-domain threshold.

cond-mat.mtrl-sci↗

arXiv2019

Opportunities and challenges for spintronics in the microelectronic industry

Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, and beyond-CMOS logic. We discuss state-of-the-art developments in these areas as well as opportunities and challenges that will have to be met, both at the device and system level, in order to integrate novel spintronic functionalities and materials in mainstream microelectronic platforms.

physics.app-ph↗

arXiv2019

Phase-Change Control of Interlayer Exchange Coupling

Changing the interlayer exchange coupling between magnetic layers in-situ is a key issue of spintronics, as it allows for the optimization of properties that are desirable for applications, including magnetic sensing and memory. In this paper, we utilize the phase change material VO2 as a spacer layer to regulate the interlayer exchange coupling between ferromagnetic layers with perpendicular magnetic anisotropy. The successful growth of ultra-thin (several nanometres) VO2 films is realized by sputtering at room temperature, which further enables the fabrication of [Pt/Co]2/VO2/[Co/Pt]2 multilayers with distinct interfaces. Such a magnetic multilayer exhibits an evolution from antiferromagnetic coupling to ferromagnetic coupling as the VO2 undergoes a phase change. The underlying mechanism originates from the change in the electronic structure of the spacer layer from an insulating to a metallic state. As a demonstration of phase change spintronics, this work may reveal the great potential of material innovations for next-generation spintronics.

cond-mat.mtrl-sci↗

arXiv2018

Optical control of magnetism in NiFe/VO2 heterostructures

Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow-power and ultrahigh-speed spin switches, which becomes a hot spot in the field of spintronics. However, a widely applicable and efficient method to combine optical operation with magnetic modulation is still highly desired. Here, the strongly correlated electron material VO2 is introduced to realize phase-transition based optical control of the magnetism in NiFe. The NiFe/VO2 bilayer heterostructure features appreciable modulations in electrical conductivity (55%), coercivity (60%), and magnetic anisotropy (33.5%). Further analyses indicate that interfacial strain coupling plays a crucial role in this modulation. Utilizing this optically controlled magnetism modulation feature, programmable Boolean logic gates (AND, OR, NAND, NOR, XOR, NXOR and NOT) for high-speed and low-power data processing are demonstrated based on this engineered heterostructure. As a demonstration of phase-transition spintronics, this work may pave the way for next-generation electronics in the post-Moore era.

cond-mat.mtrl-sci↗

arXiv2018

Independence of spin-orbit torques from the exchange bias direction in Ni$_{81}$Fe$_{19}$/IrMn bilayers

We investigated a possible correlation between spin Hall angles and exchange bias in Ni$_{81}$Fe$_{19}$/IrMn samples by performing spin torque ferromagnetic resonance measurements. This correlation is probed by patterning of Ni$_{81}$Fe$_{19}$/IrMn bilayers in different relative orientations with respect to the exchange bias direction. The measured voltage spectra allow a quantitative determination of spin Hall angles, which are independent of the orientation around 2.8\pm0.3%.

cond-mat.mtrl-sci↗

arXiv2016

Manipulating exchange bias using all-optical helicity-dependent switching

Deterministic all-optical control of magnetization without an applied magnetic field has been reported for different materials such as ferrimagnetic and ferromagnetic thin films and granular recording media. These findings have challenged the understanding of all-optical helicity-dependent switching of magnetization and opened many potential applications for future magnetic information, memory and storage technologies. Here we demonstrate optical control of an antiferromagnetic layer through the exchange bias interaction using the helicity of a femtosecond pulsed laser on IrMn/[Co/Pt]xN antiferromagnetic/ ferromagnetic heterostructures. We show controlled switching of the sign of the exchange bias field without any applied field, only by changing the helicity of the light, and quantify the influence of the laser fluence and the number of light pulses on the exchange bias control. We also present the combined effect of laser pulses and applied magnetic field. This study opens applications in spintronic devices where the exchange bias phenomenon is routinely used to fix the magnetization orientation of a magnetic layer in one direction.

cond-mat.mtrl-sci↗

arXiv2016

Perpendicularly magnetized CoFeB multilayers with tunable interlayer exchange for synthetic ferrimagnets

A study of the multilayer system MgO/CoFeB(1.1nm)/Ta($t$)/CoFeB(0.8nm)/MgO is presented, where the two CoFeB layers are separated by a Ta interlayer of varying thickness $t$. The magnetization properties deduced from complementary techniques such as superconducting quantum interference magnetometry, ferromagnetic resonance frequency measurements and Brillouin light scattering spectroscopy can be tuned by changing the Ta thickness between $t$=0.25 nm, 0.5 nm and 0.75 nm. For $t$=0.5 nm, a ferromagnetic coupling is observed, whereas for t=0.75 nm, the antiferromagnetic coupling needed to construct a synthetic ferrimagnet is realized. In the later case, the shape of magnetic domain walls between two ferrimagnetic alignments or between a ferro- and a ferrimagnetic alignment is very different. This behavior can be interpreted as a result of the change in dipolar as well as interlayer exchange energy and domain wall pinning, which is an important conclusion for the realization of data storage devices based on synthetic ferri- and antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2016

Current-induced Pinwheel Oscillations in Perpendicular Magnetic Anisotropy Spin Valve Nanopillars

Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external magnetic field and through the introduction of spin-polarized electric current. Here we report the continuous repeated switching behavior of both the reference and free layers of a perpendicular spin valve made of Co/Pd and Co/Ni multilayers that arises for sufficiently large DC currents. This periodic switching of the two layers produces an oscillating signal in the MHz regime but is only observed for one sign of the applied current. The observed behavior agrees well with micromagnetic simulations.

cond-mat.mes-hall↗

arXiv2014

All-optical control of ferromagnetic thin films and nanostructures

The interplay of light and magnetism has been a topic of interest since the original observations of Faraday and Kerr where magnetic materials affect the light polarization. While these effects have historically been exploited to use light as a probe of magnetic materials there is increasing research on using polarized light to alter or manipulate magnetism. For instance deterministic magnetic switching without any applied magnetic fields using laser pulses of the circular polarized light has been observed for specific ferrimagnetic materials. Here we demonstrate, for the first time, optical control of ferromagnetic materials ranging from magnetic thin films to multilayers and even granular films being explored for ultra-high-density magnetic recording. Our finding shows that optical control of magnetic materials is a much more general phenomenon than previously assumed. These results challenge the current theoretical understanding and will have a major impact on data memory and storage industries via the integration of optical control of ferromagnetic bits.

cond-mat.mtrl-sci↗

arXiv2011

Asymmetric switching behavior in perpendicularly magnetized spin-valve nanopillars due to the polarizer dipole field

We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation model, they show a strong asymmetry between the parallel to antiparallel and the reverse transition, with energy barriers more than 50% higher for the parallel to antiparallel transitions. The inhomogeneous dipolar field from the polarizer is demonstrated to be at the origin of this symmetry breaking. Interestingly, the symmetry is restored for devices with a lithographically defined notch pair removed from the midpoint of the pillar cross-section along the ellipse long axis. These results have important implications for the thermal stability of perpendicular magnetized MRAM bit cells.

cond-mat.mes-hall↗