SearcharxivSearch

arXiv subjects

Stephen Bedell

Publications and source records attributed to Stephen Bedell.

2 recordsLinked to original sources

Lithium depth profiling in NMC/Graphite commercial coin cells under high C-rate cycling

This study examines the distribution and evolution of lithium in both anode and cathode materials of commercial lithium-ion coin cells subjected to high C-rate cycling, providing insights into the mechanisms of lithium loss, trapping, and plating. Cells were cycled at 1C to 3C rates, and post-mortem analysis was performed using Li nuclear reaction analysis (Li-NRA), x-ray diffraction (XRD), and scanning electron microscopy (SEM) equipped with energy-dispersive x-ray spectroscopy (EDS). Li-NRA, using the resonant nuclear reaction between an incident high-energy proton and lithium, was used to measure the depth distribution of Li in the cathode and anode layers. The Li-NRA analysis revealed a surface lithium peak on the anode, likely associated with SEI formation and lithium plating, while the cathode exhibited a decrease in lithium content by ~19.7%. XRD analysis of the cycled cathode showed an expansion of the c-lattice parameter and peak shifts consistent with lithium depletion and structural deformation, supported by SEM imaging. In contrast, the dead graphite anode shows an enhanced peak at 43.3{\deg}, which corresponds to the presence of Li2Co3. 3-C rate cycling also led to capacity fade and an increase in internal resistance, highlighting the impact of lithium plating on cell performance.

cond-mat.mtrl-sci

Ultrahigh-$Q$ on-chip silicon-germanium microresonators

We demonstrate fully crystalline, single-mode ultrahigh quality factor integrated microresonators comprising epitaxially grown Si$_{0.86}$Ge$_{0.14}$ waveguide cores with silicon claddings. These waveguides support resonances with internal $Q >10^8$ for both polarization modes, a nearly order-of-magnitude improvement over that seen in prior integrated Si photonics platforms. The maximum $Q$ is $1.71\pm0.06 \times 10^8$ for the transverse magnetic (TM) polarization mode, corresponding to a loss of $0.39\pm0.02$ dB/m. Together with silicon's strong Kerr nonlinearity and low losses in the optical, microwave and acoustic regimes, our results could lead to the Si$_{1-x}$Ge$_x$/Si architecture unlocking important new avenues for Kerr frequency combs, optomechanics, and quantum transduction.

physics.optics