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Stephen Carr

Publications and source records attributed to Stephen Carr.

At least 37 records · Page 2Linked to original sources

Non-Abelian topological defects and strain mapping in 2D moiré materials

We present a general method to analyze the topological nature of the domain boundary connectivity that appeared in relaxed moiré superlattice patterns at the interface of 2-dimensional (2D) van der Waals (vdW) materials. At large enough moiré lengths, all moiré systems relax into commensurated 2D domains separated by networks of dislocation lines. The nodes of the 2D dislocation line network can be considered as vortex-like topological defects. We find that a simple analogy to common topological systems with an $S^1$ order parameter, such as a superconductor or planar ferromagnet, cannot correctly capture the topological nature of these defects. For example, in twisted bilayer graphene, the order parameter space for the relaxed moiré system is homotopy equivalent to a punctured torus. Here, the nodes of the 2D dislocation network can be characterized as elements of the fundamental group of the punctured torus, the free group on two generators, endowing these network nodes with non-Abelian properties. Extending this analysis to consider moiré patterns generated from any relative strain, we find that antivortices occur in the presence of anisotropic heterostrain, such as shear or anisotropic expansion, while arrays of vortices appear under twist or isotropic expansion between vdW materials. Experimentally, utilizing the dark field imaging capability of transmission electron microscopy (TEM), we demonstrate the existence of vortex and antivortex pair formation in a moiré system, caused by competition between different types of heterostrains in the vdW interfaces. We also present a methodology for mapping the underlying heterostrain of a moiré structure from experimental TEM data, which provides a quantitative relation between the various components of heterostrain and vortex-antivortex density in moiré systems.

cond-mat.mes-hall↗

TB or not TB? Contrasting properties of twisted bilayer graphene and the alternating twist $n$-layer structures ($n=3, 4, 5, \dots$)

The emergence of alternating twist multilayer graphene (ATMG) as a generalization of twisted bilayer graphene (TBG) raises the question - in what important ways do these systems differ? Here, we utilize ab-initio relaxation and single-particle theory, analytical strong coupling analysis, and Hartree-Fock to contrast ATMG with $n=3,4,5,\ldots$ layers and TBG. $\textbf{I}$: We show how external fields enter in the decomposition of ATMG into TBG and graphene subsystems. The parallel magnetic field has little effect for $n$ odd due to mirror symmetry, but surprisingly also for any $n > 2$ if we are are the largest magic angle. $\textbf{II}$: We compute the relaxation of the multilayers leading to effective parameters for each TBG subsystem. We find that the second magic angle for $n=5$, $θ= 1.14$ is closest to the "chiral" model and thus may be an optimal host for fractional Chern insulators. $\textbf{III}$: We integrate out non-magic subsystems and reduce ATMG to its magic angle TBG subsystem with a screened interaction. $\textbf{IV}$: We perform an analytic strong coupling analysis of the external fields and corroborate it with Hartree-Fock. An in-plane magnetic field in TBG drives a transition to a valley Hall state or a gapless "magnetic semimetal." A displacement field $V$ has little effect on TBG, but induces a gapped phase in ATMG for small $V$ for $n = 4$ and above a critical $V$ for $n = 3$. For $n\geq 3$, we find the superexchange coupling - believed to set the scale of superconductivity in the skyrmion mechanism - increases with $V$ at angles near and below the magic angle. $\textbf{V}$: We complement our strong coupling approach with a weak coupling theory of ATMG pair-breaking. While for $n=2$ orbital effects of the in-plane magnetic field can give a critical field of the same order as the Pauli field, for $n>2$ we expect the critical field to exceed the Pauli limit.

cond-mat.str-el↗

Signatures of electronic correlations and spin-susceptibility anisotropy in nuclear magnetic resonance

We present a methodology for probing the details of electronic susceptibility through minimally-invasive nuclear magnetic resonance techniques. Specifically, we classify electron-mediated long-range interactions in an ensemble of nuclear spins by revealing their effect on simple spin echo experiments. We find that pulse strength and applied field orientation dependence of these spin echo measurements resolves the spatial extent and anisotropy of electronic spin susceptibility. This work provides an alternate explanation to NMR results in superconducting and magnetically-ordered systems. The methodology has direct applications for sensing and characterizing emergent electronic phases.

cond-mat.str-el↗

Tunable electrochemistry with moiré flat bands and topological defects at twisted bilayer graphene

Tailoring electron transfer dynamics across solid-liquid interfaces is fundamental to the interconversion of electrical and chemical energy. Stacking atomically thin layers with a very small azimuthal misorientation to produce moiré superlattices enables the controlled engineering of electronic band structures and the formation of extremely flat electronic bands. Here, we report a strong twist angle dependence of heterogeneous charge transfer kinetics at twisted bilayer graphene electrodes with the greatest enhancement observed near the 'magic angle' (~1.1 degrees). This effect is driven by the angle-dependent tuning of moiré-derived flat bands that modulate electron transfer processes with the solution-phase redox couple. Combined experimental and computational analysis reveals that the variation in electrochemical activity with moiré angle is controlled by atomic reconstruction of the moiré superlattice at twist angles <2 degrees, and topological defect AA stacking regions produce a large anomalous local electrochemical enhancement that cannot be accounted for by the elevated local density of states alone. Our results introduce moiré flat band materials as a distinctively tunable paradigm for mediating electrochemical transformations.

cond-mat.mes-hall↗

Computational Design of Moiré Assemblies Aided by Artificial Intelligence

Two-dimensional (2D) layered materials, demonstrating significantly different properties from their bulk counterparts, offer a materials platform with potential applications from energy to information processing devices. Although some single- and few-layer forms of materials such as graphene and transition metal dichalcogenides have been realized and thoroughly studied, the space of arbitrarily layered assemblies is still mostly unexplored. The main goal of this work is to demonstrate precise control of layered materials' electronic properties through careful choice of the constituent layers, their stacking, and relative orientation. Physics-based and AI-driven approaches for the automated planning, execution, and analysis of electronic structure calculations are applied to layered assemblies based on prototype one-dimensional (1D) materials and realistic 2D materials. We find it is possible to routinely generate moiré band structures in 1D with desired electronic characteristics such as a band gap of any value within a large range, even with few layers and materials (here, four and six, respectively). We argue that this tunability extends to 2D materials by showing the essential physical ingredients are already evident in calculations of two-layer MoS$_2$ and multi-layer graphene moiré assemblies.

cond-mat.mes-hall↗

Modeling the optical properties of Twisted Bilayer Photonic Crystals

We demonstrate a photonic analog of twisted bilayer graphene that has ultra-flat photonic bands and exhibits extreme slow light behavior. Our twisted bilayer photonic device, which has an operating wavelength in C-band of the telecom window, uses two crystalline silicon photonic crystal slabs separated by a methyl methacrylate tunneling layer. We numerically determine the magic angle using a finite-element method and the corresponding photonic band structure, which exhibits a flat band over the entire Brillouin zone. This flat band causes the group velocity to approach zero and introduces light localization in a linear periodic photonic system. Using a plane-wave continuum model we find that photonic modes in twisted bilayer photonic crystals are not as tightly bound as their electronic counterparts in twisted bilayer graphene. In addition, the photonic system has a larger band asymmetry. The band structure can easily be engineered by adjusting the device geometry, giving significant freedom in the design of devices. Our work provides a fundamental understanding of the photonic properties of twisted bilayer photonic crystals and opens the door to nanoscale-based non-linear enhancement and superradiance.

physics.optics↗

Strain fields in twisted bilayer graphene

Van der Waals heteroepitaxy allows deterministic control over lattice mismatch or azimuthal orientation between atomic layers to produce long wavelength superlattices. The resulting electronic phases depend critically on the superlattice periodicity as well as localized structural deformations that introduce disorder and strain. Here, we introduce Bragg interferometry, based on four-dimensional scanning transmission electron microscopy, to capture atomic displacement fields in twisted bilayer graphene with twist angles < 2°. Nanoscale spatial fluctuations in twist angle and uniaxial heterostrain are statistically evaluated, revealing the prevalence of short-range disorder in this class of materials. By quantitatively mapping strain tensor fields we uncover two distinct regimes of structural relaxation -- in contrast to previous models depicting a single continuous process -- and we disentangle the electronic contributions of the rotation modes that comprise this relaxation. Further, we find that applied heterostrain accumulates anisotropically in saddle point regions to generate distinctive striped shear strain phases. Our results thus establish the reconstruction mechanics underpinning the twist angle dependent electronic behaviour of twisted bilayer graphene, and provide a new framework for directly visualizing structural relaxation, disorder, and strain in any moiré material.

cond-mat.mes-hall↗

Geometric origins of topological insulation in twisted layered semiconductors

Twisted bilayers of two-dimensional (2D) materials are proving a fertile ground for investigating strongly correlated electron phases. This is because the moiré pattern introduced by the relative twist between layers introduces long-wavelength effective potentials which lead to electron localization. Here, we develop a generalized continuum model for the electronic structure of moiré patterns, based on first-principles calculations and tailored to capture the physics of twisted bilayer 2D semiconductors. We apply this model to a database of eighteen 2D crystals covering a range of atomic relaxation and electronic structure features. Many of these materials host topologically insulating (TI) moiré bands in a certain range of twist angles, which originate from the competition between triangular and hexagonal moiré patterns, tuned by the twist angle. The topological phases occur in the same range as the maximally flat moiré bands.

cond-mat.mtrl-sci↗

Correlated Insulating States and Transport Signature of Superconductivity in Twisted Trilayer Graphene Moiré of Moiré Superlattices

Layers of two-dimensional materials stacked with a small twist-angle give rise to beating periodic patterns on a scale much larger than the original lattice, referred to as a moiré superlattice. When the stacking involves more than two layers with independent twist angles between adjacent layers, it generates moiré of moiré superlattices, with multiple length scales that control the system's behavior. Here we demonstrate these effects of a high-order moiré superlattice in twisted trilayer graphene with two consecutive small twist angles. We report correlated insulating states near the half filling of the moiré of moiré superlattice at an extremely low carrier density (~1010 cm-2), near which we also report a zero-resistance transport behavior typically expected in a 2D superconductor. Moreover, the temperature dependence of the measured resistances at full-occupancy (v = -4 and v = 4) states are semi-metallic, distinct from the insulating behavior of twisted bilayer systems, providing the first demonstration of emergent correlated transport behaviors from continuous, non-isolated higher-order moiré flat bands. Our findings shed new insights into the microscopic mechanisms of moiré correlated states and provide the impetus for future studies on this material platform, such as the demonstration of phase coherence and Meissner-like effect.

cond-mat.mes-hall↗

Moiré metrology of energy landscapes in van der Waals heterostructures

The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moiré superlattice encodes elusive insights into the local interlayer interaction. Here we introduce moiré metrology as a combined experiment-theory framework to probe the stacking energy landscape of bilayer structures at the 0.1 meV/atom scale, outperforming the gold-standard of quantum chemistry. Through studying the shapes of moiré domains with numerous nano-imaging techniques, and correlating with multi-scale modelling, we assess and refine first-principle models for the interlayer interaction. We document the prowess of moiré metrology for three representative twisted systems: bilayer graphene, double bilayer graphene and H-stacked $MoSe_2/WSe_2$. Moiré metrology establishes sought after experimental benchmarks for interlayer interaction, thus enabling accurate modelling of twisted multilayers.

cond-mat.mes-hall↗

Twisted Trilayer Graphene: a Precisely Tunable Platform for Correlated Electrons

We introduce twisted trilayer graphene (tTLG) with two independent twist angles as an ideal system for the precise tuning of the electronic interlayer coupling to maximize the effect of correlated behaviors. As established by experiment and theory in the related twisted bilayer graphene system, van Hove singularities (VHS) in the density of states can be used as a proxy of the tendency for correlated behaviors. To explore the evolution of VHS in the twist-angle phase space of tTLG, we present a general low-energy electronic structure model for any pair of twist angles. We show that the basis of the model has infinite dimensions even at a finite energy cutoff and that no Brillouin zone exists even in the continuum limit. Using this model, we demonstrate that the tTLG system exhibits a wide range of magic angles at which VHS merge and the density of states has a sharp peak at the charge-neutrality point through two distinct mechanisms: the incommensurate perturbation of twisted bilayer graphene's flat bands or the equal hybridization between two bilayer moiré superlattices.

cond-mat.mes-hall↗

Duality between atomic configurations and Bloch states in twistronic materials

The relative orientation (twist) of successive layers of stacked two-dimensional (2D) materials creates variations in the interlayer atomic registry. The variations often form a super lattice, called a moiré pattern, which can alter electronic properties. In this work we introduce a classification of the single-particle electronic structures that can occur in twisted stacks of 2D layers by characterizing them as "moiré molecules" or "moiré crystals". The molecules generate localized electronic states and moiré flat bands, while the crystals are sometimes unconventional and produce electronic banding in the configuration basis. The underpinning of this classification is the duality between interlayer configuration and monolayer Bloch momentum in moiré Hamiltonians. We apply this understanding to diagrams of local electron density in untwisted geometries to produce intuitive and quantitative predictions of twistronic properties. We provide a conceptual introduction to this framework through a one-dimensional model, and then apply it to 2D twisted bilayers of the semi-metal graphene, and of MoS$_2$, a representative material of the transition metal dichalcogenide (TMDC) family of semiconductors. This level of thorough understanding of twistronic phenomena is vital in the search for new material platforms for localized moiré electrons.

cond-mat.mes-hall↗

Lithium intercalation in MoS$_2$ bilayers and implications for moiré flat bands

Intercalation of lithium atoms between layers of 2D materials can alter their atomic and electronic structure. We investigate effects of Li intercalation in twisted bilayers of the transition metal dichalcogenide MoS$_2$ through first-principles calculations, tight-binding parameterization based on the Wannier transformation, and analysis of moiré band structures through an effective continuum model. The energetic stability of different intercalation sites for Li between layers of MoS$_2$ are classified according to the local coordination type and the number of vertically aligned Mo atoms, suggesting that the Li atoms will cluster in certain regions of the moiré superlattice. The proximity of a Li atom has a dramatic influence on the interlayer interaction between sulfur atoms, deepening the moiré potential well and leading to better isolation of the flat bands in the energy spectrum. These results point to the usefulness for the use of chemical intercalation as a powerful means for controlling moiré flat-band physics in 2D semiconductors.

cond-mat.mes-hall↗

LAN -- A materials notation for 2D layered assemblies

Two-dimensional (2D) layered materials offer intriguing possibilities for novel physics and applications. Before any attempt at exploring the materials space in a systematic fashion, or combining insights from theory, computation and experiment, a formal description of information about an assembly of arbitrary composition is required. Here, we introduce a domain-generic notation that is used to describe the space of 2D layered materials from monolayers to twisted assemblies of arbitrary composition, existent or not-yet-fabricated. The notation corresponds to a theoretical materials concept of stepwise assembly of layered structures using a sequence of rotation, vertical stacking, and other operations on individual 2D layers. Its scope is demonstrated with a number of example structures using common single-layer materials as building blocks. This work overall aims to contribute to the systematic codification, capture and transfer of materials knowledge in the area of 2D layered materials.

cond-mat.mtrl-sci↗

Electronic structure calculations of twisted multi-layer graphene superlattices

Quantum confinement endows two-dimensional (2D) layered materials with exceptional physics and novel properties compared to their bulk counterparts. Although certain two- and few-layer configurations of graphene have been realized and studied, a systematic investigation of the properties of arbitrarily layered graphene assemblies is still lacking. We introduce theoretical concepts and methods for the processing of materials information, and as a case study, apply them to investigate the electronic structure of multi-layer graphene-based assemblies in a high-throughput fashion. We provide a critical discussion of patterns and trends in tight binding band structures and we identify specific layered assemblies using low-dispersion electronic bands as indicators of potentially interesting physics like strongly correlated behavior. A combination of data-driven models for visualization and prediction is used to intelligently explore the materials space. This work more generally aims to increase confidence in the combined use of physics-based and data-driven modeling for the systematic refinement of knowledge about 2D layered materials, with implications for the development of novel quantum devices.

cond-mat.mes-hall↗

Effects of Lithium Intercalation in Twisted Bilayer Graphene

We investigate the effects of lithium intercalation in twisted bilayers of graphene, using first-principles electronic structure calculations. To model this system we employ commensurate supercells that correspond to twist angles of 7.34$^\circ$ and 2.45$^\circ$. From the energetics of lithium absorption we demonstrate that for low Li concentration the intercalants cluster in the AA regions with double the density of a uniform distribution. The charge donated by the Li atoms to the graphene layers results in modifications to the band structure that can be qualitatively captured using a continuum model with modified interlayer couplings in a region of parameter space that has yet to be explored either experimentally or theoretically. Thus, the combination of intercalation and twisted layers simultaneously provides the means for spatial control over material properties and an additional knob with which to tune moiré physics in twisted bilayers of graphene, with potential applications ranging from energy storage and conversion to quantum information.

cond-mat.mes-hall↗

Efficient Computation of Kubo Conductivity for Incommensurate 2D Heterostructures

Here we introduce a numerical method for computing conductivity via the Kubo Formula for incommensurate 2D bilayer heterostructures using a tight-binding framework. We begin with deriving the momentum space formulation and Kubo Formula from the real space tight-binding model using the appropriate Bloch transformation operator. We further discuss the resulting algorithm along with its convergence rate and computation cost in terms of parameters such as relaxation time and temperature. In particular, we show that for low frequencies, low temperature, and long relaxation times conductivity can be computed very efficiently using momentum space for a wide class of materials. We then demonstrate our method by computing conductivity for twisted bilayer graphene (tBLG) for small twist angles.

cond-mat.mes-hall↗

Collective excitations in twisted bilayer graphene close to the magic angle

The electronic properties of twisted bilayer graphene (TBG) can be dramatically different from those of a single graphene layer, in particular when the two layers are rotated relative to each other by a small angle. TBG has recently attracted a great deal of interest, sparked by the discovery of correlated insulating and superconducting states, for twist angle $θ$ close to a so-called 'magic angle' $\approx 1.1°$. In this work, we unveil, via near-field optical microscopy, a collective plasmon mode in charge-neutral TBG near the magic angle, which is dramatically different from the ordinary single-layer graphene intraband plasmon. In selected regions of our samples, we find a gapped collective mode with linear dispersion, akin to the bulk magnetoplasmons of a two-dimensional (2D) electron gas. We interpret these as interband plasmons and associate those with the optical transitions between quasi-localized states originating from the moiré superlattice. Surprisingly, we find a higher plasmon group velocity than expected, which implies an enhanced strength of the corresponding optical transition. This points to a weaker interlayer coupling in the AA regions. These intriguing optical properties offer new insights, complementary to other techniques, on the carrier dynamics in this novel quantum electron system.

cond-mat.str-el↗