arXiv subjects

Stephen Ducharme

Publications and source records attributed to Stephen Ducharme.

5 recordsLinked to original sources

arXiv2021

Giant Transport Anisotropy in ReS$_2$ Revealed via Nanoscale Conducting Path Control

The low in-plane symmetry in layered 1T'-ReS$_2$ results in strong band anisotropy, while its manifestation in the electronic properties is challenging to resolve due to the lack of effective approaches for controlling the local current path. In this work, we reveal the giant transport anisotropy in monolayer to four-layer ReS$_2$ by creating directional conducting paths via nanoscale ferroelectric control. By reversing the polarization of a ferroelectric polymer top layer, we induce conductivity switching ratio of >1.5x10$^8$ in the ReS$_2$ channel at 300 K. Characterizing the domain-defined conducting nanowires in an insulating background shows that the conductivity ratio between the directions along and perpendicular to the Re-chain can exceed 5.5x10$^4$. Theoretical modeling points to the band origin of the transport anomaly, and further reveals the emergence of a flat band in few-layer ReS$_2$. Our work paves the path for implementing the highly anisotropic 2D materials for designing novel collective phenomena and electron lensing applications.

cond-mat.mes-hall↗

arXiv2017

Ferroelectric Domain Patterning Controlled Schottky Junction State in Monolayer MoS$_2$

We exploit scanning probe controlled domain patterning in a ferroelectric top layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS$_2$ between a transistor and a junction state. In the presence of a domain wall, MoS$_2$ exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height varies from 0.38 eV to 0.57 eV and is tunabe by a SiO$_2$ global back-gate, while the tuning range of depends sensitively on the conduction band tail trapping states. Our work points to a new route to achieving programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.

cond-mat.mes-hall↗

arXiv2013

Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers

We report piezo-response force microscopy studies of the static and dynamic properties of domain walls (DWs) in 11 to 36 nm thick films of crystalline ferroelectric poly(vinylidene-fluoride-trifluorethylene). The DW roughness exponent ζ ranges from 0.39 to 0.48 and the DW creep exponent μ varies from 0.20 to 0.28, revealing an unexpected effective dimensionality of ~1.5 that is independent of film thickness. Our results suggest predominantly 2D ferroelectricity in the layered polymer and we attribute the fractal dimensionality to DW deroughening due to the correlations between the in-plane and out-of-plane polarization, an effect that can be exploited to achieve high lateral domain density for developing nanoscale ferroelectrics-based applications.

cond-mat.mtrl-sci↗

arXiv2006

Nanoscale polarization manipulation and imaging in ferroelectric Langmuir-Blodgett polymer films

The behavior of ferroelectricity at the nanoscale is the focus of increasing research activity because of intense interest in the fundamental nature of spontaneous order in condensed-matter systems and because of the many practical applications of ferroelectric thin films to, for example, electromechanical transducers, infrared imaging sensors, and nonvolatile random-access memories. Ferroelectricity, in analogy with its namesake ferromagnetism, is the property of some crystalline systems to maintain a permanent, but reversible, electrical polarization in the absence of an external electric field. The imaging and dynamics of the piezoelectric response at the nanoscale is perhaps the most direct means of probing polarization, as has been demonstrated in a number of thin films and nanostructures . Here we report the use of piezoresponse force microscopy (PFM) and switching spectroscopy PFM (SSPFM) to image the ferroelectric properties, domain structure, and polarization switching of ultrathin ferroelectric Langmuir-Blodgett films of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymers. PFM imaging of P(VDF-TrFE) thin films reveals ferroelectric domain sizes on the order of 25-50 nm and an imaging resolution below 5 nm. The feature sizes in topography and PFM images are comparable and the boundaries of uniformly polarized regions coincide with topographic features. Arbitrary polarization patterns could be repeatedly written and erased, with writing resolution limited by the grain size. Hysteresis loops from individual domains show clear coercive voltage, but are not well saturated at +/-10 V amplitude.

cond-mat.mtrl-sci↗

arXiv2003

Comment on: 'Depolarization corrections to the coercive field in thin-film ferroelectrics'

The Letter by Dawber et al. [J. Phys.: Condens. Matter 15 L393 (2003)] notes that incomplete screening in the electrodes of a ferroelectric capacitor can result in an underestimate for the true coercive field in films of nanometer thickness. We show that their estimate of the magnitude of this correction it too large in the case of ferroelectric copolymer Langmuir-Blodgett films and, as a result, invalidates the claim that finite-size scaling of the ferroelectric coercive field is evident in films thinner than 15 nm.

cond-mat↗