arXiv subjects

Stephen M. Wu

Publications and source records attributed to Stephen M. Wu.

12 recordsLinked to original sources

arXiv2025

Strain-induced Moiré Reconstruction and Memorization in Two-Dimensional Materials without Twist

Two-dimensional (2D) materials with a twist between layers exhibit a moiré interference pattern with larger periodicity than any of the constituent layer unit cells. In these systems, a wealth of exotic phases appear that result from moiré-dependent many-body electron correlation effects or non-trivial band topology. One problem with using twist to generate moiré interference has been the difficulty in creating high-quality, uniform, and repeatable samples due to fabrication through mechanical stacking with viscoelastic stamps. Here we show, a new method to generate moiré interference through the controlled application of layer-by-layer strain (heterostrain) on non-twisted 2D materials, where moiré interference results from strain-induced lattice mismatch without twisting or stacking. Heterostrain generation is achieved by depositing stressed thin films onto 2D materials to apply large strains to the top layers while leaving layers further down less strained. We achieve deterministic control of moiré periodicity and symmetry in non-twisted 2D multilayers and bilayers, with 97% yield, through varying stressor film force (film thickness X film stress) and geometry. Moiré reconstruction effects are memorized after the removal of the stressor layers. Control over the strain degree-of-freedom opens the door to a completely unexplored set of unrealized tunable moiré geometric symmetries, which may now be achieved in a high-yield and user-skill independent process taking only hours. This technique solves a long-standing throughput bottleneck in new moiré quantum materials discovery and opens the door to industrially-compatible manufacturing for 2D moiré-based electronic or optical devices.

cond-mat.mtrl-sci↗

arXiv2023

Strain Engineering for High-Performance Phase Change Memristors

A new mechanism for memristive switching in 2D materials is through electric-field controllable electronic/structural phase transitions, but these devices have not outperformed status quo 2D memristors. Here, we report a high-performance bipolar phase change memristor from strain engineered multilayer 1T'-MoTe$_{2}$ that now surpasses the performance metrics (on/off ratio, switching voltage, switching speed) of all 2D memristive devices, achieved without forming steps. Using process-induced strain engineering, we directly pattern stressed metallic contacts to induce a semimetallic to semiconducting phase transition in MoTe2 forming a self-aligned vertical transport memristor with semiconducting MoTe$_{2}$ as the active region. These devices utilize strain to bring them closer to the phase transition boundary and achieve ultra-low ~90 mV switching voltage, ultra-high ~10$^8$ on/off ratio, 5 ns switching, and retention of over 10$^5$ s. Engineered tunability of the device switching voltage and on/off ratio is also achieved by varying the single process parameter of contact metal film force (film stress $\times$ film thickness).

physics.app-ph↗

arXiv2023

An atomistic insight into moiré reconstruction in Twisted Bilayer Graphene beyond the magic angle

Twisted bilayer graphene exhibits electronic properties that are highly correlated with the size and arrangement of moiré patterns. While rigid rotation of two layers creates the topology of moiré patterns, local rearrangements of the atoms due to interlayer van der Waals interactions result in atomic reconstruction within the moiré cells. The ability to manipulate these patterns by controlling twist angle and/or externally applied strain provides a promising route to tune their properties. While this phenomenon has been extensively studied for angles close to or smaller than the magic angle (θm=1.1°), its extent for higher angles and how it evolves with strain is unknown and is believed to be mostly absent at high angles. We use theoretical and numerical analyses to resolve reconstruction in angles above θm using interpretive and fundamental physical measures. In addition, we propose a method to identify local regions within moiré cells and track their evolution with strain for a range of representative high twist angles. Our results show that reconstruction is actively present beyond the magic angle and its contribution to the evolution of the moiré cells is major. Our theoretical method to correlate local and global phonon behavior provides further validation on the role of reconstruction at higher angles. Our findings provide a better understanding of moiré reconstruction in large twist angles and the evolution of moiré cells in the presence of strain, that might be very crucial for twistronics-based applications.

cond-mat.mtrl-sci↗

arXiv2023

Moiré Engineering in 2D Heterostructures with Process-Induced Strain

We report deterministic control over moiré superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced strain engineering, a widely used technique in industrial silicon nanofabrication processes. By depositing stressed thin films onto our twisted bilayer graphene samples, heterostrain magnitude and strain directionality can be controlled by stressor film force (film stress x film thickness) and patterned stressor geometry, respectively. We examine strain and moiré interference with Raman spectroscopy through in-plane and moiré-activated phonon mode shifts. Results support systematic C$_{3}$ rotational symmetry breaking and tunable periodicity in moiré superlattices under the application of uniaxial or biaxial heterostrain. Experimental results are validated by molecular statics simulations and density functional theory based first principles calculations. This provides a method to not only tune moiré interference without additional twisting, but also allows for a systematic pathway to explore different van der Waals based moiré superlattice symmetries by deterministic design.

cond-mat.mes-hall↗

arXiv2022

Ultrasonic Delamination Based Adhesion Testing for High-Throughput Assembly of van der Waals Heterostructures

Two-dimensional (2D) materials assembled into van der Waals (vdW) heterostructures contain unlimited combinations of mechanical, optical, and electrical properties that can be harnessed for potential device applications. Critically, these structures require control over interfacial adhesion in order for them to be constructed and to have enough integrity to survive industrial fabrication processes upon their integration. Here, we promptly determine the quality of adhesion of various exfoliated 2D materials on conventional SiO$_{2}$/Si substrates using ultrasonic delamination threshold testing. This test allows us to quickly infer relative substrate adhesion based on the percent area of 2D flakes that survive a fixed time in an ultrasonic bath, allowing for control over process parameters that yield high or poor adhesion. We leverage this control of adhesion to optimize the vdW heterostructure assembly process, where we show that samples with high or low substrate adhesion relative to each other can be used selectively to construct high-throughput vdW stacks. Instead of tuning the adhesion of polymer stamps to 2D materials with constant 2D-substrate adhesion, we tune the 2D-substrate adhesion with constant stamp adhesion to 2D materials. The polymer stamps may be reused without any polymer melting steps, thus avoiding high temperatures (<120°C) and allowing for high-throughput production. We show that this procedure can be used to create high-quality 2D twisted bilayer graphene on SiO$_{2}$/Si, characterized with atomic force microscopy and Raman spectroscopic mapping, as well as low-angle twisted bilayer WSe$_{2}$ on h-BN/SiO$_{2}$/Si, where we show direct real-space visualization of moiré reconstruction with tilt angle-dependent scanning electron microscopy.

physics.app-ph↗

arXiv2021

Strain Engineering 2D MoS$_{2}$ with Thin Film Stress Capping Layers

We demonstrate a method to induce tensile and compressive strain into two-dimensional transition metal dichalcogenide (TMDC) MoS$_{2}$ via the deposition of stressed thin films to encapsulate exfoliated flakes. With this technique we can directly engineer MoS$_{2}$ strain magnitude by changing deposited thin film stress, therefore allowing variable strain to be applied on a flake-to-flake level. These thin film stressors are analogous to SiN$_{x}$ based stressors implemented in industrial CMOS processes to enhance Si mobility, suggesting that our concept is highly scalable and may be applied for large-scale integration of strain engineered TMDC devices. We choose optically transparent stressors to allow us to probe MoS$_{2}$ strain through Raman spectroscopy. Combining thickness dependent analyses of Raman peak shifts in MoS$_{2}$ with atomistic simulations, we can explore layer-by-layer strain transfer. MoS$_{2}$ on conventional substrates (SiO$_{2}$, MgO) show strain transfer into the top two layers of multilayer flakes with limited strain transfer to monolayers due to substrate adhesion. To mitigate this limitation, we also explore stressors on van der Waals heterostructures constructed of monolayer (1L) MoS$_{2}$ on hexagonal boron nitride (h-BN). This concept frees the 1L-MoS$_{2}$ allowing for a 0.85$\%$ strain to be applied to the monolayer with a corresponding strain induced bandgap change of 75 meV. By using thin films with higher stress, strain may be engineered to be even higher. Various stressors and deposition methods are considered, showing a stressor material independent transfer of strain that only depends on stressor film force with negligible defects induced into MoS$_{2}$ when thermal evaporation is used.

cond-mat.mes-hall↗

arXiv2019

Strain-Based Room-Temperature Non-Volatile MoTe$_2$ Ferroelectric Phase Change Transistor

The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue to scale down to increase computational performance, physical limitations from nanoscale field-effect operation begin to cause undesirable current leakage that is detrimental to the continued advancement of computing. Using a fundamentally different mechanism of operation, we show that through nanoscale strain engineering with thin films and ferroelectrics (FEs) the transition metal dichalcogenide (TMDC) MoTe$_2$ can be reversibly switched with electric-field induced strain between the 1T'-MoTe$_2$ (semimetallic) phase to a semiconducting MoTe$_2$ phase in a field effect transistor geometry. This alternative mechanism for transistor switching sidesteps all the static and dynamic power consumption problems in conventional field-effect transistors (FETs). Using strain, we achieve large non-volatile changes in channel conductivity (G$_{on}$/G$_{off}$~10$^7$ vs. G$_{on}$/G$_{off}$~0.04 in the control device) at room temperature. Ferroelectric devices offer the potential to reach sub-ns nonvolatile strain switching at the attojoule/bit level, having immediate applications in ultra-fast low-power non-volatile logic and memory while also transforming the landscape of computational architectures since conventional power, speed, and volatility considerations for microelectronics may no longer exist.

physics.app-ph↗

arXiv2018

Probing short-range magnetic order in a geometrically frustrated magnet by spin Seebeck effect

Competing magnetic interactions in geometrically frustrated magnets give rise to new forms of correlated matter, such as spin liquids and spin ices. Characterizing the magnetic structure of these states has been difficult due to the absence of long-range order. Here, we demonstrate that the spin Seebeck effect (SSE) is a sensitive probe of magnetic short-range order (SRO) in geometrically frustrated magnets. In low temperature (2 - 5 K) SSE measurements on a model frustrated magnet \mathrm{Gd_{3}Ga_{5}O_{12}}, we observe modulations in the spin current on top of a smooth background. By comparing to existing neutron diffraction data, we find that these modulations arise from field-induced magnetic ordering that is short-range in nature. The observed SRO is anisotropic with the direction of applied field, which is verified by theoretical calculation.

cond-mat.mtrl-sci↗

arXiv2016

Antiferromagnetic spin Seebeck Effect

We report on the observation of the spin Seebeck effect in antiferromagnetic MnF$_2$. A device scale on-chip heater is deposited on a bilayer of Pt (4 nm)/MnF$_2$ (110) (30 nm) grown by molecular beam epitaxy on a MgF$_2$ (110) substrate. Using Pt as a spin detector layer it is possible to measure thermally generated spin current from MnF$_2$ through the inverse spin Hall effect. The low temperature (2 - 80 K) and high magnetic field (up to 140 kOe) regime is explored. A clear spin flop transition corresponding to the sudden rotation of antiferromagnetic spins out of the easy axis is observed in the spin Seebeck signal when large magnetic fields (>9 T) are applied parallel the easy axis of the MnF$_2$ thin film. When magnetic field is applied perpendicular to the easy axis, the spin flop transition is absent, as expected.

cond-mat.mtrl-sci↗

arXiv2015

Spin Seebeck devices using local on-chip heating

A micro-patterned spin Seebeck device is fabricated using an on-chip heater. Current is driven through a Au heater layer electrically isolated from a bilayer consisting of Fe$_3$O$_4$ (insulating ferrimagnet) and a spin detector layer. It is shown that through this method it is possible to measure the longitudinal spin Seebeck effect (SSE) for small area magnetic devices, equivalent to traditional macroscopic SSE experiments. Using a lock-in detection technique it is possible to more sensitively characterize both the SSE and the anomalous Nernst effect (ANE), as well as the inverse spin Hall effect in various spin detector materials. By using the spin detector layer as a thermometer, we can obtain a value for the temperature gradient across the device. These results are well matched to values obtained through electromagnetic/thermal modeling of the device structure and with large area spin Seebeck measurements.

cond-mat.mes-hall↗

arXiv2014

Spin waves in micro-structured yttrium iron garnet nanometer-thick films

We investigated the spin-wave propagation in a micro-structured yttrium iron garnet waveguide of $40$ nm thickness. Utilizing spatially-resolved Brillouin light scattering microscopy, an exponential decay of the spin-wave amplitude of $(10.06 \pm 0.83)$ $μ$m was observed. This leads to an estimated Gilbert damping constant of $α=(8.79\pm 0.73)\times 10^{-4}$, which is larger than damping values obtained through ferromagnetic resonance measurements in unstructured films. The theoretically calculated spatial interference of waveguide modes was compared to the spin-wave pattern observed experimentally by means of Brillouin light scattering spectroscopy.

cond-mat.mes-hall↗

arXiv2014

Unambiguous separation of the inverse spin Hall and anomalous Nernst Effects within a ferromagnetic metal using the spin Seebeck effect

The longitudinal spin Seebeck effect is measured on the ferromagnetic insulator Fe$_3$O$_4$ with the ferromagnetic metal Co$_{0.2}$Fe$_{0.6}$B$_{0.2}$ (CoFeB) as the spin detector. By using a non-magnetic spacer material between the two materials (Ti), it is possible to decouple the two ferromagnetic materials and directly observe pure spin flow from Fe$_3$O$_4$ into CoFeB. It is shown, that in a single ferromagnetic metal the inverse spin Hall effect (ISHE) and anomalous Nernst effect (ANE) can occur simultaneously with opposite polarity. Using this and the large difference in the coercive fields between the two magnets, it is possible to unambiguously separate the contributions of the spin Seebeck effect from the ANE and observe the degree to which each effect contributes to the total response. These experiments show conclusively that the ISHE and ANE in CoFeB are separate phenomena with different origins and can coexist in the same material with opposite response to a thermal gradient.

cond-mat.mes-hall↗