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Stephen Paolini

Publications and source records attributed to Stephen Paolini.

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Signatures of nodal superconductivity in stoichiometric FeTe

Superconductivity in stoichiometric FeTe opens access to the FeTe endpoint of the Fe(Se,Te) phase diagram, yet the nature of its superconducting pairing state remains unresolved. In this work, we combine scanning superconducting quantum interference device (SQUID) microscopy, electrical transport, scanning tunneling microscopy and spectroscopy (STM/S), and mean-field calculations to investigate the local superfluid response and pairing state of FeTe thin films with tunable stoichiometry. Even in stoichiometric FeTe, we observe micrometer-scale spatial variations in both superfluid stiffness and superconducting transition temperature $T_c$, while the London penetration depth remains non-saturating down to 0.02$T_c$ and follows a power-law temperature dependence with an exponent of approximately 1-1.5. Together with a V-shaped low-energy density of states and two-gap modeling, these results indicate a superconducting state with gap nodes or deep minima, consistent with either a $d$-wave or nodal $s$-wave superconducting state. Our findings establish stoichiometric FeTe as a distinct superconducting regime that departs from the trend toward more isotropic gaps at intermediate Se/Te compositions, providing a new benchmark for modern microscopic theories of iron-chalcogenide superconductivity. Our work also reveals a crossover from weak to rapid suppression of $T_c$ as superfluid stiffness decreases, connecting FeTe to the broader phenomenology observed in unconventional superconductors.

cond-mat.supr-con

Stoichiometric FeTe is a Superconductor

Iron-based superconductors are a fascinating family of materials in which multiple electronic bands and strong antiferromagnetic (AFM) correlations are key ingredients for competing ground states, including antiferromagnetism, electronic nematicity, and unconventional superconductivity. FeTe, unlike its superconducting isostructural counterpart FeSe, has long been regarded as an AFM metal sans superconductivity. In this work, we employ molecular beam epitaxy to grow FeTe films and perform post-growth annealing under a Te flux. By performing spin-polarized scanning tunneling microscopy and spectroscopy, we demonstrate that the AFM order in as-grown FeTe films is induced by interstitial Fe atoms that disrupt the ideal 1:1 stoichiometry. Remarkably, the removal of these interstitial Fe atoms through Te annealing yields stoichiometric FeTe films that show no AFM order and instead exhibit robust superconductivity with a critical temperature of ~13.5K. This superconducting state is further confirmed by the observation of Cooper pair tunneling, zero electrical resistance, and the Meissner effect. Therefore, our results demonstrate that stoichiometric FeTe is inherently a superconductor, overturning a long-held view that it is an AFM metal. This work clarifies the origin of superconductivity in FeTe-based heterostructures and demonstrates the importance of stoichiometry control in understanding the competition between AFM and superconductivity in iron-based superconductors.

cond-mat.supr-con

Moire Engineering of Cooper-Pair Density Modulation States

Cooper-pair density modulation (CPDM) states are superconducting phases in which the order parameter varies periodically in real space without breaking translational symmetry. Recently, moire superlattices in layered materials have emerged as powerful platforms for engineering charge density with tunable lattice symmetry, offering a new route to creating and controlling CPDM states. In this work, we demonstrate moire-induced CPDM states in a bilayer heterostructure formed by epitaxially stacking one quintuple layer (1 QL) of topological insulator Sb2Te3 on a six-unit-cell (6 UC) antiferromagnetic FeTe layer. Scanning tunneling microscopy and spectroscopy (STM/S) measurements reveal a moir\'e superlattice formed between the hexagonal Te lattice of Sb2Te3 and the square Te lattice of FeTe, which spatially modulates the two superconducting gaps of the 1 QL Sb2Te3/6 UC FeTe bilayer. Our Josephson STM/S measurements provide direct real-space imaging of the CPDM states with a wavelength corresponding to the periodicity of the moire superlattice. By substituting Sb2Te3 with Bi2Te3, we achieve control over both the periodicity and magnitude of the CPDM states. Our work demonstrates an epitaxial strategy for synthesizing moire superlattices from materials with different crystal symmetries and reveals a new mechanism for engineering CPDM states in designer bilayer heterostructures.

cond-mat.supr-con

Interplay of Quantum Size Effect and Tensile Strain on Surface Morphology of Sn(100) Islands

The quantum size effect (QSE) and strain effect are two key factors influencing the surface morphology of thin films, which can increase film surface roughness through QSE-induced thickness oscillation and strain-induced island formation, respectively. Surface roughness usually manifests in the early stages of film growth and diminishes beyond a critical thickness. In this work, we employ molecular beam epitaxy (MBE) to grow Sn(100) islands with varying thickness N on bilayer graphene-terminated 6H-SiC(0001) substrates. Scanning tunneling microscopy and spectroscopy measurements reveal an inverse surface roughness effect that highlights the interplay of QSE and misfit strain in shaping the surface morphology of Sn(100) islands. For N =< 10, the islands exhibit flat surfaces, while for N >= 26, the island surfaces become corrugated and patterned. For the intermediate range, i.e., 12 =< N =<24, both flat and patterned surfaces coexist, with the percentage coverage of the patterned surface oscillating as a function of N. By performing density functional theory calculations, we demonstrate that the unusual surface pattern evolution in our MBE-grown Sn(100) islands is a result of the interplay between QSE-induced surface roughing and tensile strain-induced smoothening effect.

cond-mat.mtrl-sci

Orbital Hybridization-Induced Ising-Type Superconductivity in a Confined Gallium Layer

In low-dimensional superconductors, the interplay between quantum confinement and interfacial hybridization effects can reshape Cooper pair wavefunctions and induce novel forms of unconventional superconductivity. In this work, we employ a plasma-free, carbon buffer layer-assisted confinement epitaxy method to synthesize trilayer gallium (Ga) sandwiched between a graphene layer and a 6H-SiC(0001) substrate, forming an air-stable graphene/trilayer Ga/SiC heterostructure. In this confined light-element Ga layer, we demonstrate interfacial Ising-type superconductivity driven by atomic orbital hybridization between the Ga layer and the SiC substrate. Electrical transport measurements reveal that the in-plane upper critical magnetic field u0Hc2,|| reaches ~21.98T at T=400 mK, approximately 3.38 times the Pauli paramagnetic limit (~6.51T). Angle-resolved photoemission spectroscopy (ARPES) measurements combined with theoretical calculations confirm the presence of split Fermi surfaces with Ising-type spin textures at the K and K' valleys of the confined Ga layer strongly hybridized with SiC. Moreover, by incorporating finite relaxation time induced by impurity scattering into an Ising-type superconductivity model, we reproduce the entire temperature-dependent u0Hc2,|| phase diagram. This work establishes a new strategy to realize unconventional pairing wavefunctions by combining quantum confinement and interfacial hybridization effects in superconducting thin films. It also opens new avenues for designing scalable superconducting quantum electronic and spintronic devices through interfacial engineering.

cond-mat.mes-hall

Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films

The interface of two materials can harbor unexpected emergent phenomena. One example is interface-induced superconductivity. In this work, we employ molecular beam epitaxy to grow a series of heterostructures formed by stacking together two non-superconducting antiferromagnetic materials, an intrinsic antiferromagnetic topological insulator MnBi2Te4 and an antiferromagnetic iron chalcogenide FeTe. Our electrical transport measurements reveal interface-induced superconductivity in these heterostructures. By performing scanning tunneling microscopy and spectroscopy measurements, we observe a proximity-induced superconducting gap on the top surface of the MnBi2Te4 layer, confirming the interaction between superconductivity and antiferromagnetism in the MnBi2Te4 layer. Our findings will advance the fundamental inquiries into the topological superconducting phase in hybrid devices and provide a promising platform for the exploration of chiral Majorana physics in MnBi2Te4-based heterostructures.

cond-mat.supr-con

Interface-Induced Superconductivity in Magnetic Topological Insulator-Iron Chalcogenide Heterostructures

When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We discover emergent interface-induced superconductivity in these heterostructures and demonstrate the trifecta occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer, the three essential ingredients of chiral TSC. The unusual coexistence of ferromagnetism and superconductivity can be attributed to the high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. The magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics, constituting an important step toward scalable topological quantum computation.

cond-mat.mes-hall