arXiv subjects

Stephen R. Power

Publications and source records attributed to Stephen R. Power.

At least 19 recordsLinked to original sources

arXiv2026

Valley-dependent electron optics using quantum dots in bilayer graphene

Electrostatically defined quantum dots (QDs) with layer-antisymmetric gating in Bernal-stacked bilayer graphene (BLG) open a local gap and generate a mass-like term with opposite sign in the two valleys, producing strongly valley-dependent scattering without magnetic fields, strain, or spin-orbit coupling. Building on this mechanism, we propose a tunable platform based on such QDs for valley-dependent electron optics in BLG. Using a four-band continuum model and a generalized multiple-scattering formalism, we analyze scattering of Gaussian electron beams from single- and multi-dot architectures and compute valley-resolved currents and angular profiles. A single dot produces distinct valley-dependent deflection, while multi-dot configurations enable enhanced control: identical-dot arrays act as valley splitters, whereas oppositely gated pairs function as valley filters. Combining these elements yields tunable generation, steering, and filtering of highly valley-polarized currents with strong suppression of forward transmission. The required energy scales, gate asymmetries, and device dimensions are within experimentally accessible regimes for dual-gated BLG, establishing quantum-dot arrays as a realistic platform for controllable valley-resolved electron optics.

cond-mat.other↗

arXiv2026

Optimizing quantum transport in multi-barrier graphene systems using differential evolution

Potential and mass barriers in graphene introduce electron scattering, modulating transmission probabilities. Complex multi-barrier setups allow electron transmission to be controlled with high precision, but have a huge design space of possible barrier geometries. This work presents a framework to optimize electronic transport in such systems using differential evolution algorithms. First, transfer matrix methods are employed to efficiently compute quantum transport through multi-barrier structures, before optimization is applied to find barrier configurations whose transmission profiles closely match a predefined target profile. To address the trade-off between the accuracy and complexity of resulting barrier configurations, regularization techniques are incorporated into the optimization process. Our approach demonstrates the potential for highly tunable electronic transport in graphene-based systems by exploiting evolution-inspired optimization techniques.

cond-mat.mes-hall↗

arXiv2025

Unveiling the Miniband Structure of Graphene Moir\'e Superlattices via Gate-dependent Terahertz Photocurrent Spectroscopy

Moir\'e superlattices formed at the interface between stacked two-dimensional atomic crystals offer limitless opportunities to design materials with widely tunable properties and engineer intriguing quantum phases of matter. However, despite progress, precise probing of the electronic states and tantalizingly complex band textures of these systems remain challenging. Here, we present gate-dependent terahertz photocurrent spectroscopy as a robust technique to detect, explore and quantify intricate electronic properties in graphene moir\'e superlattices. Specifically, using terahertz light at different frequencies, we demonstrate distinct photocurrent regimes evidencing the presence of avoided band crossings and tiny (~1-20 meV) inversion-breaking global and local energy gaps in the miniband structure of minimally twisted graphene and hexagonal boron nitride heterostructures, key information that is inaccessible by conventional electrical or optical techniques. In the off-resonance regime, when the radiation energy is smaller than the gap values, enhanced zero-bias responsivities arise in the system due to the lower Fermi velocities and specific valley degeneracies of the charge carriers subjected to moir\'e superlattice potentials. In stark contrast, above-gap excitations give rise to bulk photocurrents -- intriguing optoelectronic responses related to the geometric Berry phase of the constituting electronic minibands. Besides their fundamental importance, these results place moir\'e superlattices as promising material platforms for advanced, sensitive and low-noise terahertz detection applications.

cond-mat.mes-hall↗

arXiv2025

Tunable Dot Platform for Controlling Electron Flow in Graphene

We introduce an innovative graphene-based architecture to control electronic current flows. The tunable dot platform (TDP) consists of an array of gated dots, with independently adjustable potentials, embedded in graphene. Inspired by Mie theory, and leveraging multiscattering effects, we demonstrate that tailored current behavior can be achieved due to the variety of possible dot configurations. Optimization is performed using differential evolution, which identifies configurations that maximize specific objectives, such as directing or splitting an electron beam by tuning the angular dependence of scattering. Our results demonstrate the potential of the TDP to provide precise control over induced current flows in graphene, making it a promising component for next-generation electronic and electron optic devices.

cond-mat.mes-hall↗

arXiv2025

Edge disorder and magnetism in graphene nanoribbons: an inverse modelling approach

It is difficult to completely eliminate disorder during the fabrication of graphene-based nanodevices. From a simulation perspective, it is straightforward to determine the electronic transport properties of disordered devices if complete information about the disorder and the Hamiltonian describing it is available. However, to do the reverse and determine information about the nature of the disorder purely from transport measurements is a far more difficult task. In this work, we apply a recently developed inversion technique to identify important structural information about edge-disordered zigzag graphene nanoribbons. The inversion tool decodes the electronic transmission spectrum to obtain the overall level of edge vacancies in this type of device. We also consider the role of spin-polarised states at the ribbon edges and demonstrate that, in addition to edge roughness, the inversion procedure can also be used to detect the presence of magnetism in such nanoribbons. We finally show that if the transmission for both spin orientations is available, for example by using ferromagnetic contacts in a transport measurement, then additional structural information about the relative concentration of defects on each edge can be derived.

cond-mat.mes-hall↗

arXiv2023

One-dimensional topological channels in heterostrained bilayer graphene

The domain walls between AB- and BA-stacked gapped bilayer graphene have garnered intense interest as they host topologically-protected, valley-polarised transport channels. The introduction of a twist angle between the bilayers and the associated formation of a Moire pattern has been the dominant method used to study these topological channels, but heterostrain can also give rise to similar stacking domains and interfaces. Here, we theoretically study the electronic structure of a uniaxially heterostrained bilayer graphene. We discuss the formation and evolution of interface-localized channels in the one-dimensional Moire pattern that emerges due to the different stacking registries between the two layers. We find that a uniform heterostrain is not sufficient to create one-dimensional topological channels in biased bilayer graphene. Instead, using a simple model to account for the in-plane atomic reconstruction driven by the changing stacking registry, we show that the resulting expanded Bernal-stacked domains and sharper interfaces are required for robust topological interfaces to emerge. These states are highly localised in the AA- or SP-stacked interface regions and exhibit differences in their layer and sublattice distribution depending on the interface stacking. We conclude that heterostrain can be used as a mechanism to tune the presence and distribution of topological channels in gapped bilayer graphene systems, complementary to the field of twistronics.

cond-mat.mes-hall↗

arXiv2023

The emergence of interface states in graphene/transition metal dichalcogenides heterostructure with lateral interface

The relative strength of different proximity spin-orbit couplings in graphene on transition metal dichalcogenides (TMDC) can be tuned via the metal composition in the TMDC layer. While Gr/MoSe$_2$, has a normal gap, proximity to WSe$_2$ instead leads to valley-Zeeman-driven inverted bands. Although the $\mathbb{Z}_2$ index vanishes, these systems enable a concentration-dependent topological crossover with band gap closure when graphene is stacked on a composite or alloyed TMDC layer. This is due to a nonzero Berry curvature at the individual valleys and a change of the valley Chern index at a critical composition ratio. Therefore, inherently, we also expect that stacked heterostructures of graphene on composite TMDC layers should host localised boundary modes due to the presence of Gr/WSe$_2$- and Gr/MoSe$_2$-like domains with opposite valley Chern indices. In this study, we show that a Gr/(Mo-W)Se$_2$ heterostructure with a lateral interface in the TMDC layer can indeed host topologically protected in-gap propagating modes, similar to those at the border of commensurate AB and BA domains in biased minimally-twisted bilayer graphene. However, the stability of these modes depends crucially on the system size. We demonstrate that the electronic behaviour of Gr/(Mo-W)Se$_2$ heterostructures evolves from a homogeneous effective medium to a superposition of domain-localised bands and zero-energy branch crossings as the domain size in the alloyed TMDC layer is increased.

cond-mat.mes-hall↗

arXiv2022

Proximity spin-orbit coupling in graphene on alloyed transition metal dichalcogenides

The negligible intrinsic spin-orbit coupling (SOC) in graphene can be enhanced by proximity effects in stacked heterostructures of graphene and transition metal dichalcogenides (TMDCs). The composition of the TMDC layer plays a key role in determining the nature and strength of the resultant SOC induced in the graphene layer. Here, we study the evolution of the proximity-induced SOC as the TMDC layer is deliberately defected. Alloyed ${\rm G/W_χMo_{1-χ}Se_2}$ heterostructures with diverse compositions ($χ$) and defect distributions are simulated using density functional theory. Comparison with continuum and tight-binding models allows both local and global signatures of the metal-atom alloying to be clarified. Our findings show that, despite some dramatic perturbation of local parameters for individual defects, the low-energy spin and electronic behaviour follow a simple effective medium model which depends only on the composition ratio of the metallic species in the TMDC layer. Furthermore, we demonstrate that the topological state of such alloyed systems can be feasibly tuned by controlling this ratio.

cond-mat.mes-hall↗

arXiv2022

Strain-induced stacking transition in bilayer graphene

Strain, both naturally occurring and deliberately engineered, can have a considerable effect on the structural and electronic properties of 2D and layered materials. Uniaxial or biaxial heterostrain modifies the stacking arrangement of bilayer graphene (BLG) which subsequently influences the electronic structure of the bilayer. Here, we use Density Functional Theory (DFT) calculations to investigate the interplay between an external applied heterostrain and the resulting stacking in BLG. We determine how a strain applied to one layer is transferred to a second, 'free' layer and at what critical strain the ground-state AB-stacking is disrupted. To overcome limitations introduced by periodic boundary conditions, we consider an approximate system consisting of an infinite graphene sheet and an armchair graphene nanoribbon (AGNR). We find that above a critical strain of ~1%, it is energetically favourable for the free layer to be unstrained, indicating a transition between uniform AB-stacking and non-uniform mixed stacking. This is in agreement with a simple model estimate based on the individual energy contributions of strain and stacking effects. Our findings suggest that small levels of strain provide a platform to reversibly engineer stacking order and Moiré features in bilayers, providing a viable alternative to twistronics to engineer topological and exotic physical phenomena in such systems.

cond-mat.mtrl-sci↗

arXiv2022

Predicting magnetic edge behaviour in graphene using neural networks

Magnetic moments near zigzag edges in graphene allow complex nanostructures with customised spin properties to be realised. However, computational costs restrict theoretical investigations to small or perfectly periodic structures. Here we demonstrate that a machine-learning approach, using only geometric input, can accurately estimate magnetic moment profiles, allowing arbitrarily large and disordered systems to be quickly simulated. Excellent agreement is found with mean-field Hubbard calculations, and important electronic, magnetic and transport properties are reproduced using the estimated profiles. This approach allows the magnetic moments of experimental-scale systems to be quickly and accurately predicted, and will speed-up the identification of promising geometries for spintronic applications. While machine-learning approaches to many-body interactions have largely been limited to exact solutions of complex models at very small scales, this work establishes that they can be successfully applied at very large scales at mean-field levels of accuracy.

cond-mat.mes-hall↗

arXiv2021

Have Mysterious Topological Valley Currents Been Observed in Graphene Superlattices?

We provide a critical discussion concerning the claim of topological valley currents, driven by a global Berry curvature and valley Hall effect proposed in recent literature. After pointing out a major inconsistency of the theoretical scenario proposed to interpret giant nonlocal resistance, we discuss various possible alternative explanations and open directions of research to solve the mystery of nonlocal transport in graphene superlattices.

cond-mat.mes-hall↗

arXiv2021

Valley current generation using biased bilayer graphene dots

Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can be directly linked to quantum transport simulations. This is a promising route towards more complete experimental investigation of valleytronic phenomena in graphene, but a major obstacle is the difficulty in applying the sublattice-dependent potentials required. Here we show that strongly valley-dependent scattering also emerges from bilayer graphene quantum dots, where the gap size can be easily modulated using the interlayer potentials in dual-gated devices. Robust valley-dependent scattering and concomitant valley currents are observed for a range of systems, and we investigate the role of dot size, mass strength and additional potential terms. Finally, we note that a strong valley splitting of electronic current also emerges when a biased bilayer dot is embedded in a single layer of graphene, but that the effect is less robust than for a bilayer host. Our findings suggest that bilayer graphene devices with custom mass profiles provide an excellent platform for future valleytronic exploration of two-dimensional materials.

cond-mat.mes-hall↗

arXiv2021

Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene

We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandgap is shown to give rise to valley-dependent scattering and a finite Fermi surface contribution to the valley Hall conductivity, related to characteristics of $R_\mathrm{NL}$. These features are robust against disorder and provide a plausible interpretation of controversial experiments in graphene/hBN superlattices. Our findings suggest both an alternative mechanism for the generation of valley Hall effect in graphene, and a route towards valley-dependent electron optics, by materials and device engineering.

cond-mat.mes-hall↗

arXiv2020

Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport

Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptionally long. Here, we study these regimes by performing quantum simulations of graphene nonlocal spin valves. We find that conventional spin diffusion theory fails to capture the crossover to the ballistic regime as well as the limit of long spin diffusion length. We show that the latter can be described by an extension of the current theoretical framework. Finally, by covering the whole range of spin dynamics, our study opens a new perspective to predict and scrutinize spin transport in graphene and other two-dimensional material-based ultraclean devices.

cond-mat.mes-hall↗

arXiv2019

Gate electrostatics and quantum capacitance in ballistic graphene devices

We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene sheet. In contrast, devices with lower edge disorder (< 1 nm roughness) are strongly influenced by the fringing electrostatic field at graphene boundaries, in quantitative agreement with theoretical calculations for pristine systems. Specifically, devices with low edge disorder present a large effective capacitance variation across the device channel with a nontrivial, inhomogeneous profile due not only to classical electrostatics but also to quantum mechanical effects. We show that such quantum capacitance contribution, occurring due to the low density of states (DOS) across the device in the presence of an external magnetic field, is considerably altered as a result of the gate electrostatics in the ballistic graphene device. Our conclusions can be extended to any two dimensional (2D) electronic system confined by a hard-wall potential and are important for understanding the electronic structure and device applications of conducting 2D materials.

cond-mat.mtrl-sci↗

arXiv2018

Charge and Spin Transport Anisotropy in Nanopatterned Graphene

Anisotropic electronic transport is a possible route towards nanoscale circuitry design, particularly in two-dimensional materials. Proposals to introduce such a feature in patterned graphene have to date relied on large-scale structural inhomogeneities. Here we theoretically explore how a random, yet homogeneous, distribution of zigzag-edged triangular perforations can generate spatial anisotropies in both charge and spin transport. Anisotropic electronic transport is found to persist under considerable disordering of the perforation edges, suggesting its viability under realistic experimental conditions. Furthermore, controlling the relative orientation of perforations enables spin filtering of the transmitted electrons, resulting in a half-metallic anisotropic transport regime. Our findings point towards a co-integration of charge and spin control in a two-dimensional platform of relevance for nanocircuit design. We further highlight how geometrical effects allow finite samples to display finite transverse resistances, reminiscent of Spin Hall effects, in the absence of any bulk fingerprints of such mechanisms, and explore the underlying symmetries behind this behaviour.

cond-mat.mes-hall↗

arXiv2018

Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures

We use confocal Raman microscopy and modified vector analysis methods to investigate the nanoscale origin of strain and carrier concentration in exfoliated graphene-hexagonal boron nitride (hBN) heterostructures on silicon dioxide (SiO2). Two types of heterostructures are studied: graphene on SiO2 partially coved by hBN, and graphene fully encapsulated between two hBN flakes. We extend the vector analysis methods to produce spatial maps of the strain and doping variation across the heterostructures. This allows us to visualise and directly quantify the much-speculated effect of the environment on carrier concentration as well as strain in graphene. Moreover, we demonstrate that variations in strain and carrier concentration in graphene arise from nanoscale features of the heterostructures such as fractures, folds and bubbles trapped between layers. For bubbles in hBN-encapsulated graphene, hydrostatic strain is shown to be greatest at bubble centres, whereas the maximum of carrier concentration is localised at bubble edges. Raman spectroscopy is shown to be a non-invasive tool for probing strain and doping in graphene, which could prove useful for engineering of two-dimensional devices.

cond-mat.mtrl-sci↗

arXiv2018

One-dimensional ferromagnetic edge contacts to two-dimensional graphene/h-BN heterostructures

We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of charge current spreading in the nonlocal measurement configuration. Such behavior has been confirmed by the absence of a Hanle signal and gate-dependent magnetoresistance measurements that reveal a change in sign of the signal for the electron- and hole-doped regimes, which is in contrast to the expected behavior of the spin signal. Calculations show that the contact-induced fringe fields are typically on the order of hundreds of mT, but can be reduced below 100 mT with careful optimization of the contact geometry. There may be additional contribution from magnetoresistance effects due to tunneling anisotropy in the contacts, which need to be further investigated. These studies are useful for optimization of spin injection and detection in 2D material heterostructures through 1D edge contacts.

cond-mat.mes-hall↗